DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2479
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE

DESCRIPTION
The 2SK2479 is N-Channel MOS Field Effect Transistor de- PACKAGE DIMENSIONS

signed for high voltage switching applications. (in millimeters)

3.0 ± 0.3
10.6 MAX. 4.8 MAX.
FEATURES 3.6 ± 0.2 1.3 ± 0.2
10.0
• Low On-Resistance

5.9 MIN.
12.7 MIN. 15.5 MAX.
RDS(on) = 7.5 Ω (VGS = 10 V, ID = 2.0 A)
• Low Ciss Ciss = 485 pF TYP. 4
• High Avalanche Capability Ratings 1 2 3

6.0 MAX.
1.3 ± 0.2 0.5 ± 0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSS 900 V 0.75 ± 0.1 2.8 ± 0.2
2.54 2.54
Gate to Source Voltage VGSS ±30 V 1. Gate
2. Drain
Drain Current (DC) ID(DC) ±3.0 A 3. Source
4. Fin (Drain)
Drain Current (pulse)* ID(pulse) ±8.0 A JEDEC: TO-220AB
Total Power Dissipation (Tc = 25 ˚C) PT1 70 W
MP-25 (TO-220)
Total Power Dissipation (TA = 25 ˚C) PT2 1.5 W
Drain
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** IAS 3.0 A Body
Diode
Single Avalanche Energy** EAS 5.4 mJ
Gate
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
Source

Document No. D10271EJ1V0DS00 (1st edition)

Date Published August 1995 P
Printed in Japan
© 1995
 2SK2479

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

Drain to Source On-State Resistance RDS(on) 5.6 7.5 Ω VGS = 10 V, ID = 2.0 A

Gate to Source Cutoff Voltage VGS(off) 2.5 3.5 V VDS = 10 V, ID = 1 mA

Forward Transfer Admittance | yfs | 0.8 S VDS = 20 V, ID = 2.0 A
Drain Leakage Current IDSS 100 µA VDS = VDSS, VGS = 0

Gate to Source Leakage Current IGSS ±100 nA VGS = ±30 V, VDS = 0

Input Capacitance Ciss 485 pF VDS = 10 V
Output Capacitance Coss 75 pF VGS = 0

Reverse Transfer Capacitance Crss 10 pF f = 1 MHz

Turn-On Delay Time td(on) 12 ns ID = 2.0 A
Rise Time tr 5 ns VGS = 10 V

Turn-Off Delay Time td(off) 35 ns VDD = 150 V

Fall Time tf 8 ns RG = 10 Ω

Total Gate Charge QG 17 nC ID = 3.0 A

Gate to Source Charge QGS 3 nC VDD = 450 V

Gate to Drain Charge QGD 8 nC VGS = 10 V
Body Diode Forward Voltage VF(S-D) 1.0 V IF = 3.0 A, VGS = 0

Reverse Recovery Time trr 670 ns IF = 3.0 A, VGS = 0

Reverse Recovery Charge Qrr 3.0 µC di/dt = 50 A/µs

Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time

D.U.T. D.U.T.
RG = 25 Ω L RL VGS
VGS 90 %
VGS (on)
RG Wave Form 10 %
VDD 0
PG 50 Ω PG. RG = 10 Ω VDD
VGS = 20 - 0 V
ID 90 %
90 %
VGS ID
BVDSS I 10 % 10 %
0 D 0
Wave Form
IAS
ID VDS t td (on) tr td (off) tf
VDD
ton toff
t = 1us
Duty Cycle ≤ 1 %
Starting Tch

Test Circuit 3 Gate Charge

D.U.T.
IG = 2 mA RL

PG. 50 Ω VDD

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

2
 2SK2479

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs.

SAFE OPERATING AREA CASE TEMPERATURE
70
dT - Percentage of Rated Power - %

PT - Total Power Dissipation - W

100 60

50
80
40
60
30
40
20

20 10

0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

TC - Case Temperature - ˚C TC - Case Temperature - ˚C

DRAIN CURRENT vs.

FORWARD BIAS SAFE OPERATING AREA DRAIN TO SOURCE VOLTAGE
100
Pulsed
10
ID - Drain Current - A

ID - Drain Current - A
10 ID(pulse)
V) PW
10 =
= 10
GS
V 0
(at 1
m s VGS = 20 V
µ

ID(DC) 5
it ed Po 10 s 10 V
1 Lim w
er m 8V
(on
)
Di s
DS ss 6V
R ipa
tio
n
Lim
TC = 25 ˚C ite
Single Pulse d
0.1
1 10 100 1000 0 10 20 30 40
VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V

FORWARD TRANSFER CHARACTERISTICS

100
Pulsed
VDS = 10 V
TA = –25 ˚C
25 ˚C
ID - Drain Current - A

10
75 ˚C
125 ˚C

1.0

0.1

0 5 10 15
VGS - Gate to Source Voltage - V

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 2SK2479

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

10 000

rth(t) - Transient Thermal Resistance - ˚C/W

1 000

100 Rth(ch-a) = 83.3(˚C/W)

10

Rth(ch-c) = 1.79(˚C/W)
1.0

0.1
Single Pulse
Tc = 25 ˚C
0.01
10 µ 100 µ 1m 10 m 100 m 1 10 100 1 000

PW - Pulse Width - s

FORWARD TRANSFER ADMITTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT RDS(on) - Drain to Source On-State Resistance - Ω GATE TO SOURCE VOLTAGE
10
| yfs | - Forward Transfer Admittance - S

VDS = 20 V Pulsed
Pulsed
TA = –25 ˚C
25 ˚C
1.0 75 ˚C 10
125 ˚C ID = 3A
1.5 A
0.6 A

0.1 5

1
1 0.1 1.0 10 0 10 20 30
ID - Drain Current - A VGS - Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE GATE TO SOURCE CUTOFF VOLTAGE vs.

RDS(on) - Drain to Source On-State Resistance - Ω

RESISTANCE vs. DRAIN CURRENT CHANNEL TEMPERATURE

VGS(off) - Gate to Source Cutoff Voltage - V

15 Pulsed VDS = 10 V
VGS = 10 V ID = 1 mA

10
5

0 0
0.1 1.0 10 –50 0 50 100 150
ID - Drain Current - A Tch - Channel Temperature - ˚C

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 2SK2479

SOURCE TO DRAIN DIODE

DRAIN TO SOURCE ON-STATE RESISTANCE vs. FORWARD VOLTAGE

RDS(on) - Drain to Source On-State Resistance - Ω

CHANNEL TEMPERATURE
Pulsed

ISD - Diode Forward Current - A

100
10

10

VGS = 10 V
VGS = 0 V
1
VGS = 10 V
0 ID = 2 A
–50 0 50 100 150 0 0.5 1.0 1.5
Tch - Channel Temperature - ˚C VSD - Source to Drain Voltage - V

CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE SWITCHING CHARACTERISTICS
1 000 1 000
VGS = 0

td(on), tr, td(off), tf - Switching Time - ns

f = 1 MHz
Ciss, Coss, Crss - Capacitance - pF

Ciss

100 100
tr

td(off)
tf
Coss td(on)
10 10

Crss VDD = 150 V

VGS = 10 V
1.0 RG = 10 Ω
1.0
1.0 10 100 1 000 0.1 1.0 10 100

VDS - Drain to Source Voltage - V ID - Drain Current - A

REVERSE RECOVERY TIME vs.

DRAIN CURRENT DYNAMIC INPUT/OUTPUT CHARACTERISTICS
10 000 800 16
di/dt = 50 A/µs ID = 3 A
VGS = 0
VDS - Drain to Source Voltage - V

14
trr - Reverse Recovery time - ns

VGS - Gate to Source Voltage - V

600 VGS 12
VDD = 450 V
1 000 300 V 10
150 V
400 8

6
100
200 4

2
VDS
10 0
0.1 1.0 10 100 0 6 12 18 27

ID - Drain Current - A Qg - Gate Charge - nC

5
 2SK2479

SINGLE AVALANCHE CURRENT vs. SINGLE AVALANCHE ENERGY

INDUCTIVE LOAD DERATING FACTOR
100 160
VDD = 150 V
RG = 25 Ω
IAS - Single Avalanche Current - A

140
VGS = 20 V → 0

Energy Derating Factor - %

IAS ≤ 3.0 A
120
10
100
IAS = 3 A
EAS 80
=5
.4 m
J 60
1.0
40
VDD = 150 V 20
VGS = 20 V → 0
RG = 25 Ω 0
100 µ 1m 10 m 100 m 25 50 75 100 125 150
L - Inductive Load - H Starting Tch - Starting Channel Temperature - ˚C

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 2SK2479

REFERENCE

Document Name Document No.

NEC semiconductor device reliability/quality control system. TEI-1202

Quality grade on NEC semiconductor devices. IEI-1209

Semiconductor device mounting technology manual. IEI-1207
Semiconductor device package manual. IEI-1213

Guide to quality assurance for semiconductor devices. MEI-1202

Semiconductor selection guide. MF-1134
Power MOS FET features and application switching power supply. TEA-1034

Application circuits using Power MOS FET. TEA-1035

Safe operating area of Power MOS FET. TEA-1037

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 2SK2479

[MEMO]

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11

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