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P75NF75 Pb
Pb Free Plating Product
75V,80A Heatsink Planar N-Channel Power MOSFETs
FEATURES
{ 2. Drain
* RDS(ON) = 9.5mΩ @VGS = 10 V(Typical) BVDSS = 75V
* Ultra low gate charge ( typical 117 nC ) ●
TO-220M-SQ
General Description
This N-channel enhancement mode field-effect power transistor
using THINKI Semiconductor advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220M-SQ pkg is well suited for
adaptor power units,amplifiers,inverters and SMPS application.
3
2
1
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
TO-220/TO-263 62.5 °C /W
Junction to Ambient θJA
TO-220F 62.5 °C /W
TO-220/TO-263 0.5 °C /W
Junction to Case θJC
TO-220F 3.33 °C /W
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note 2) VSD VGS = 0 V, IS = 80A 1.5 V
Continuous Source Current IS 80 A
Pulsed Source Current (Note 1) ISM 320 A
Reverse Recovery Time tRR IS = 80A, VDD = 25 V 132 ns
Reverse Recovery Charge QRR dIF / dt = 100 A/µs 660 µC
Note: 1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
D.U.T. +
VD
S
-
+
- L
RG
Drive VDD
r * dv/dt controlled by RG
Same * ISD controlled by pulse period
VGS * D.U.T.-Device Under Test
Type as
D.U.T.
VGS Period P. W.
D=
(Driver) P.W. Period
VGS=10V
IRM
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Drain Current vs. Gate Threshold Voltage
Breakdown Voltage
300 450
400
250
350
Drain Current, ID (µA)
250
150
200
100 150
100
50
50
0 0
0 0.5 1 1.5 2.0 2.5 3.0 3.5 4.0 0 20 40 60 80 100
Gate Threshold Voltage, VTH (V) Drain-Source Breakdown Voltage, BVDSS(V)
1 6
0.8
4
0.6
0.4
2
0.2
0 0
0 50 100 150 200 0 0.2 0.4 0.6 0.8 1.0
Drain to Source Voltage, VDS (mV) Source to Drain Voltage, VSD (V)