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NPN TRIPLE DIFFUSED

KSD5702 PLANAR SILICON TRANSISTOR

COLOR TV HORIZONTAL OUTPUT


TO-3PF
APPLICATION (DAMPER DIODE BUILT IN)

• High Collector-Base Voltage (VCBO=1500V)


• High Switching Speed (tf. max=0.4uS)

ABSOLUTE MIXIMUM RATING


Characteristic Symbol Rating Unit
Collector Base Voltage VCBO 1500 V
Collector Emitter Voltage VCEO 800 V
Emitter Base Voltage VEBO 6 V
Collector Current IC 6 A
Collector Current (Peak) IC 16 A
Collector Dissipation (T C=25&) PC 60 W
Junction Temperature TJ 150 & 1.Base 2.Collector 3.Emitter
Storage Temperature T STG -50 ~ 150 &

ELECTRICAL CHARACTERISTICS (T C=25&)


Characteristic Symbol Test Condition Min Typ Max Unit
Collector Cutoff Current ICBO VCB = 800V, IE = 0 10 uA
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 40 200 mA
DC Current Gain hFE 1 VCE = 5V, IC = 1A 10 30 -
hFE 2 VCE = 5V, IC = 3A 5 15
Collector Emitter Saturation Voltage VCE(sat) IC = 4A, IB = 0.8A 2 5 V
Base Emitter Saturation Voltage VBE(sat) IC = 4A, IB = 0.8A 1.5 V
Current Gain Bandwidth Product fT VCE = 10V, IC = 1A 3 MHz
Damper Diode Turn On Voltage VF IF = 6A 2 V
Fall Time tF IC = 4A, IB1 = 0.8A 0.4 uS
IB2 = - 1.6A, VCC = 200V
RL = 50 Î
NPN TRIPLE DIFFUSED
KSD5072 PLANAR SILICON TRANSISTOR
NPN TRIPLE DIFFUSED
KSD5072 PLANAR SILICON TRANSISTOR