Sen12 200 Questions With Answers in Sentaurus - Science Topic

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TCAD TCAD Simulation Semiconductor Device Modeling Silvaco TCAD Semiconductor Devices
Questions related to Sentaurus

Danial Keighobadi
answered a question related to Sentaurus
Does anyone have experience with simulating a SOI TFET?
Question 2 Answers
Nurunnnahar Islam Mou
The physics section is as follows: Physics{ * DriftDiffusion EffectiveIntrinsicDensity( OldSlotboom )
EffectiveIntrinsicDensity(BandGapNarrowing (OldSlotboom)) Mobility( DopingDep Enormal ) Recombination( eAvalanche(CarrierTempDrive)
hAvalanche(Eparallel) TrapAssistedAuger Auger Auger(WithGeneration) SRH(DopingDep) Band2Band( Model = Hurkx DensityCorrection =
None ) SRH( NonlocalPath( Lifetime = Hurkx Fermi TwoBand ) ) ) } But the drain current has a very unusual shape. I am not sure why. Can
anyone help?
Danial Keighobadi
“Yes. I worked. My simulator was SILVACO ATLAS. If you have any question, I'll can help you.”
View
Hop Dinh
Need Sentaurus TCAD simulation help to use Silicon and Magnesium as dopant materials in GaN?
Question 9 Answers
Md. Mottaleb Hossain
Hello everyone, I have used Silicon and Magnesium as dopant materials for different layers of GaN photodiode. I have drawn the structure and
used those dopant materials using Sentaurus TCAD. I was able to do meshing. I visualized doping pro le in Meshing section. After running
simulation, I had the following issues: Net doping concentration (DopingConcentration): not found in doping le Total doping concentration
(TotalConcentration): not found in doping le No Species in doping le for incomplete ionization. ! Can someone please guide me how I can
resolve the issue. I have not faced... more
Hop Dinh
“Hello Everyone, I have the same problem with Magnesium as dopant material for GaN (type p) in Sentaurus. I built the structure in
Sentaurus Structure Editor (SSE), meshing is successful but after SDEVICE simulation, I can not see the AcceptorConcentration, the
results don't change with different concentration. I tried with "BoronActiveConcentration" as a replacement but it seems that Boron is
not suitable for GaN Even I tried "IncompleteIonization" in Physics section, rede ned Ionization model in the parameter le and
updated the list of materials, for which magnesium acts as an...” more
View
Debojyoti Sutradhar
How to add new Ferroelectric material to Synopsys sentaurus TCAD ?
Question 4 Answers
Rakesh R V
https://www.researchgate.net/topic/Sentaurus 1/24
Rakesh R V
I am working on negative capacitance based designs. I want to use the ferroelectric material, which is not available in the material list of
TCAD.
Debojyoti Sutradhar
“Can you please share any tutorial about how to add parameter les?@ Biswajit Jena”
View
Abhishek Sahu
Why converging problem occur at current of order 10e-4 or 10e-3 when using Sentaurus TCAD to simulate TFET?
Question 3 Answers
Amira Nabil
I simulate a TFET structure using silicon. when I tried to change material the simulation didn't converge as the current reached order of 10e-4. I
tried to used CNormPrint to de ne where the simulation didn't converge and adjust the mesh but again a convergence problem occur. I tried to
lower Digits and ErrRef(Electron) in math section and also I used plugin but nothing happened and simulation doesn't converge. In general, I
used different structure and when current reached 10e-4 or 10e-3, a converging problem occur? Can anyone help me with this problem??
Abhishek Sahu
“Check the equation which is giving error through Cnorm. Try to change the physics related to the Cnorm”
View
Abhishek Sahu
Is there anyone who is working with the Synopsys TCAD of Sentaurus?
Question 3 Answers
Sapna Mudgal
I just started to learn this software for making Si heterojunction solar cell and facing issues in the material parameters for new material in
silicon solar cell.
Abhishek Sahu
“You need to contact the vendor, they will provide you the license.”
View
Nicolò Zagni
Negative Capacitance FET in Sentaurus TCAD. How to make simulations converge?
Question 4 Answers
Nicolò Zagni
Hello, is there anyone who successfully simulated an NCFET in Sentaurus without the internal metal layer (i.e., MFIS structure)? The problem I
am facing is related to convergence when including a ferroelectric oxide with the LK equation in the gate stack, directly in contact with the
SiO2 inter-layer. The underlying MOS is a BULK transistor, with parameters and bias similar to ref.: 10.1109/TED.2018.2794499. What should
be the strategies to ensure convergence in this kind of transient simulation? Thanks, Nicolò
Nicolò Zagni
“LK equation is implemented in SDevice version N or higher as far as I know. Hope this helps”
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Shelja Kaushal
asked a question related to Sentaurus
How to add polarization parameters for NCFET?
Question 0 Answers
Shelja Kaushal
Hi Professor, I have started working on NCFET in Sentaurus TCAD. As any ferroelectric material is not availabe in Sentaurus TCAD, I have
started@ using Si doped HfO2 as ferroelectric material. But as i am adding polarization parameters in parameters le as suggested in SDE
manual.. Polarization { * Remanent polarization P_r, saturation polarization P_s, * and coercive eld F_c for x,y,z direction (crystal axes) P_r =
(1.0000e-05, 1.0000e-05, 1.0000e-05) #[C/cm^2] P_s = (2.0000e-05, 2.0000e-05, 2.0000e-05) #[C/cm^2] F_c = (2.5000e+04, 2.5000e+04,
2.5000e+04) #[V/cm] * Relaxation time... more
View
Julien Delalleau
Could anyone suggest how I can change material parameter or add new material In Tcad Synopsys Sentaurus?
Question 7 Answers
Md Erfan
for strained Germanium some Material parameters ( Band Gap, Effective mass and electron mobility) are to be changed accordingly than
parameter of normal unstrained Germanium.
Julien Delalleau
“In fact, you must keep the existing text in the datexcodes.txt, and then adding following a template. (its better to avoid syntax error)
Please refer to "Utilities User Guide" from Synopsys", Chapter 1:The datexcodes.txt File"
http://www.sentaurus.dsod.pl/manuals/data/utilities_ug.pdf You will get all the information you need”
View
Gaurav Musalgaonkar
How to tunnel charge through SiO2 and store in metal gate using Sentaurus TCAD?
Question 5 Answers
Vanshaj Sharma
I am trying to obtain C-V characteristics for a continuous oating gate type ash memory device. (Continuous oating gate will be replaced
with nano crystals later) The structure is without drain and source terminals. List of materials from top to bottom: Ti<HfO2<Pt<SiO2<Si where
HfO2 act as blocking oxide; SiO2 as tunneling oxide; charge should get stored in platinum. I am using direct tunneling model in SiO2:
Physics(MaterialInterface="Silicon/SiO2"){GateCurrent(DirectTunneling)} and to store charge, traps in platinum (i don't know if it makes... more
sdevice_des2.cmd
Gaurav Musalgaonkar
“Vanshaj Sharma Please make sure the gate is actually oating. If not, it may be the case why charges were not transferred to the
gate. Attache a high resistance to make a gate oating and see if that works for you.”
View
Narasimhulu Thoti
How to de ne non local mesh for TFETs based on line tunneling ?
Question 3 Answers
Abhishek Acharya
I am working towards line tunneling based TFETs, where gate is placed on the source. Now, if , source overlap is increased than the current
should increase. But unfortunately, my simulation fails to obtain the same using ebarriertunneling model of Sentaurus TCAD, where a non local
mesh is de ned by user. Although the dynamic non local path model of sentaurus tcad is working well, but AC simulation are not supported.
(Here user doesnot de ne the nonlocal mesh)
Narasimhulu Thoti
“I l f i th i b t it d t A i th b d b di th t l (L )+ k tb t
“I am also facing the same issue: but a quite update As i can see the bad bending near the gate-source overlap (Lov) + n-pocket but,
still i can see overall tunneling for higher overlap is less as compared to low overlapping region. Because, one of the paper has
mentioned that the Lov is directly proportionate to increase in tunneling probability. In my case i can see more electric eld
distribution for an increased overlap, but why the overall tunneling current is still less for this case. I am in a doubt that , do we need
to change the commands of nonlocal mesh de nition points like...” more
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Lee Hyungeun
What is nonlocal mesh in TCAD and what is diffenrent from ordinary mesh??
Question 0 Answers
Lee Hyungeun
I am studying Trap-assisted tunneling with Nonlocal tunneling model in TCAD sentaurus. What is nonlocal mesh in TCAD and what is
diffenrent from ordinary mesh??
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Andy Zhu
The optical part simulation problem in Sentaurus TCAD
Question 1 Answer
Andy Zhu
I tried to simulate the photo current of the InP/InGaAs APD，but it didn’t work. light window locates on the bottom of the device,(y=6.5). May
be the parameter of the material is wrong?
Andy Zhu
“It has been solved,there's a bug in my parameter le.”
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Animesh Vaish
How to parametrise material property (for example permittivity) in Sentaurus TCAD so that the input can be taken from the workbench?
Question 0 Answers
Animesh Vaish
I am doing a simulation on Perovskite Solar Cells in Sentaurus TCAD and the experiment requires me to vary the material property of different
layers of the solar cell to analyse its impact on overall device performance. Therefore, I wanted to parametrise the material property so that
the input can be given from the Workbench ( in the similar way as we do for the device dimensions).
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Anuja Menokey M
Not able to visualize the data on Nonlocal Meshes while solving 1-D schrodinger quation in sentaurus TCAD ?
Question 5 Answers
Gaurav Musalgaonkar
I am trying to solve 1-D Schrodinger-Poisson equation using Sentaurus TCAD. However, I am not able to see any information related to the
wavefunction or any other quantity in the output les. Any suggestions would be of great help to me.
Anuja Menokey M
“M. Ehteshamuddin I have included schroedinger, still not able to visualize the wavefunction and eigen value. The wavefunction
option is not generating in the non-localplot tdr le.only edensity and hdensity is showing in it.”
View
Gaurav Musalgaonkar
How to de ne different constant mobility TCAD sentaurus FET simulation?
Question 4 Answers
Liping Hua
Liping Hua
Hi I have different doping concentration for different region, now I can only de ne a constant mobility for whole structure, how do I do that for
different region? Thank you
Gaurav Musalgaonkar
“Dear Lipin, You may try this code for region speci c model parameter de nition. #Regionwise speci c physics Physics
(region="Source") { { Insert = "Source.par} EffectiveIntrinsicDensity(NoBandgapNarrowing) Mobility() Recombination( Radiative ) }”
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Narasimhulu Thoti
What models can I use to simulate quantum TFET using sentaurus TCAD?
Question 7 Answers
Amira Nabil
I'm using Sdevice to simulate Quantum TFET and I used the following models eQuantumPotential hQuantumPotential Hydrodynamic(
hTemperature ) Mobility (Enormal(Lombardi) eHighFieldsat(CarrierTempDrive) hHighFieldsat(GradQuasiFermi) PhuMob ThinLayer(Lombardi))
Recombination(SRH(DopingDependence Tunneling) Band2Band (Model= NonlocalPath ParameterSetName=("phonon-assisted" )))
EffectiveIntrinsicDensity (BandGapNarrowing (OldSlotboom)) but unfortunately, the current is low (in order of 1e-12 ) and keep decaying not
increasing can any one help me with this problem?
Narasimhulu Thoti
“Mr. shailendra, do you got the answer?”
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Debasis Mukherjee
In Sentaurus TCAD how to Turn ON and OFF Self-Heating?
Question 6 Answers
Debasis Mukherjee
I was using "Thermodynamic Transport" Model as given in Sentaurus Device Tutorial as "Thermo_des.cmd". It was showing different lattice
temperatures in "@node@_des.tdr" le. Temperature was 707 to 745 K. Is this approach correct? If no then how to turn ON self heating? But if
Yes, then how to turn OFF self heating? I have deleted the "Temperature" word from the line "Coupled{ Poisson Electron Hole Temperature }" in
three places of "Solve" section. 1) "*- Build-up of initial solution:", 2) "*- Bias gate to target bias", and 3) "*- drain voltage sweep".
Then "@node@_des.tdr" le is NOT... more
Debasis Mukherjee
“No, TCAD license expired. Now unable to work.”
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Yusuf Ardi
Tantalum Nitride.par in sentaurus TCAD ?
Question 0 Answers
Yusuf Ardi
Hi Mate,We have an problem about .par in sentaurus. We need to make a TANOS Memory. But we didn't found out any Tantalum nitride.par.
anybody can help me? Thank you
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Gilang Mardian Kartiwa
How to simulate spin on doping process in Sentaurus TCAD?
Question 2 Answers
Dear colleagues, Currently I'm trying to simulate device processing which involve a spin on doping process (rather than diffusion or ion
implantation). I have read the Sentaurus TCAD user guide and found that it can be done by: 1. Predeposition : Specifying doping concentration
( i "d it" d) 2 D i i U i "diff " d H I' t h t d th SOD li id I ill b l d t h
(using "deposit" command) 2. Drive in: Using "diffuse" command. However, I'm not sure how to de ne the SOD liquid. I will be glad to hear any
hint(s) or suggestion(s) Regards

“Dear Mr. Zekry, Thank you for your answer. There is another things comes in my mind: In simulating spin on doping using Sentaurus,
do we have to de ne/specify the SOD liquid itself (maybe by adding the SOD properties on Sentaurus' database)? or will it be enough
just by specifying the dopant and concentration (e.g. speci ying "phosphorus/boron" at concentration of "3e20") Regards”
View
Shujian Xue
In Sentaurus, how can I plot a applied Voltage-carrier concentration (of a cutline) graph using Svisual?
Question 4 Answers
Shujian Xue
I am trying to nd out the effect of applying voltage has to carrier density on a certain cutline inside the solar cell. But right now I can either
just plot an IV curve which the I and V area both from contact or I have to extract the carrier density of 100 different applying voltatge manually
which is really tiring. Right now I am using sde for structure sdevice for simulation svisula for display the results. Can anyone tell me how can I
do this please?
Shujian Xue
“Jun-Sik Yoon Thank you!”
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Shujian Xue
I am using Sentaurus. How can I plot the average charge density of a device as a function of applied voltage?
Question 5 Answers
Nir Tessler
How to add the average electron and hole density to current plot in Sentaurus
Shujian Xue
“How did you solve it ?”
View
Ashwin Hariharan
Using Sentaurus, how can we simulate the time-resolved photoluminescence (TRPL) decay curves in a solar cell?
Question 1 Answer
Helen Par
Using Sentaurus, how can we simulate the time-resolved photoluminescence (TRPL) decay curves in a thin lm material, say Silicon? Anyone
kind enough to share the Sentaurus le for a similar simulation? Example: Impact of Interface Recombination on Time Resolved Photolumi...
Ashwin Hariharan
“TRPL simulation for solar cells are much similar to the IV simulation format in sdevice le. Except you replace the quasistationary
solver with a transient solver. It's better start the transient solver with poisson solver to provide good initial values for the solution
variables. eg: * Equilibrium Solver coupled{Poisson} plot (FilePre x = "n@node@_Poisson") * Transient Solver Transient ( InitialTime
= peak_pulse_time FinalTime = XX_secs + peak_pulse_time InitialStep = 0.1e-9 (sample value) MinStep = 1e-20 (sample value
MaxStep = 0.1e-9 (sample value ){ Coupled{Poisson...” more
View
Manju Bhargavi
How to do simulation with SWB in Sentaurus TCAD?
Question 3 Answers
Manju Bhargavi
hi, can any one help me with sentaurus TCAD SWB iam trying to stimulate it but its talking more than 3 days for simulation for SDE in SWB . is
there any system speci cations will be needed. is there any way to do simulation fast.
Manju Bhargavi
“ok sir thank you i will see”
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Manish Verma
How do i remove the error "gsub exists with status 1" in Sentaurus workbench "?
Question 0 Answers
Manish Verma
while simulating the same project with referenced as new project , error "gsub exists with status 1" is coming. what is the reason for this error
and why this error is coming? how to remove this?
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Manju Bhargavi
How to add a tool in Sentaurus workbench without the Parameters from previous tool?
Question 3 Answers
Suvendu Nayak
When I add a tool in the workbench, it automatically create same no of nodes as there are in the previous tool. I need to create a tool with new
parameter set.
Manju Bhargavi
“once do the clean up parameter and then try sir”
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Sandeep Viswanathan
How to extract sdevice model parameters in sentaurus tcad for high electron mobility transistors (HEMTs) ?
Question 0 Answers
Sandeep Viswanathan
Im looking to model algan/gan hemts through the sentaurus tcad software. Can i get an explanation on how the model parameters for HEMTs
are extracted in the sdevice feature.
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Nosheen Qasim
I have started working with TCAD Sentaurus. can any one guide me how to learn about this?
Question 3 Answers
Nosheen Qasim
I do not know any thing about this. Is there any speci c manual or tutorials for beginners which are very clear from the point of view of
experts?
Nosheen Qasim
“Thank you so much 4 ur replys”
View
Son Muyeong
Hi I want to simulate silicide contact in Sentaurus TCAD. Is there anyone who help me??
Question 14 Answers
Son Muyeong
Hi. In these days, I try to simulate silicide contact in Sentaurus TCAD. But I got trouble in making... Could you help me or discuss about it???
There are several silicide material. But There is just named "silicide" material . And also there are TiSi2, NiSi2. Q1) I don't know exactly what
material just named "silicide" material. Is "silicide" material which have just own default parameter value? What is difference just named
"silicide" and like TiSi2, NiSi2?? Q2) Now I want to simulate silicide contact that contact(material:Titanium) -- TiSi2 -- drain/ source. For... more
Son Muyeong
“I understand!!! I should upgrade 2018 version! Thank you so much!! I hope you're always happy! Many thanks Mu yeong”
View
Biki Teron
Where can i de ne "Density of States" in Sentaurus TCAD parameter le?
Question 0 Answers
Biki Teron
I have found something from silicon.par le from Sentaurus TCAD as eDOSMass { * For effective mass speci catition Formula1 (me
approximation): * or Formula2 (Nc300) can be used : Formula = 1 # [1] * Formula1: * me/m0 = [ (6 * mt)^2 * ml ]^(1/3) + mm * mt =
a[Eg(0)/Eg(T)] * Nc(T) = 2(2pi*kB/h_Planck^2*me*T)^3/2 = 2.540e19 ((me/m0)*(T/300))^3/2 a = 0.1905 # [1] ml = 0.9163 # [1] mm =
0.0000e+00 # [1] } hDOSMass { * For effective mass speci catition Formula1 (mh approximation): * or Formula2 (Nv300) can be used :
Formula = 1 # [1] * Formula1: * mh =... more
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Shailendra Singh
How to add parameter le of phonon-assisted of TFET model le in TCAD sentaurus tool ?
Question 0 Answers
Shailendra Singh
Even i have genrated all the parameters le through sdevice -P and called in the parameter le like: File{ Grid = "newstruc_msh.tdr" Plot =
"newstruc_sat_des.tdr" Current = "newstruc_sat_des.plt" Output = "newstruc_sat_des.log" parameter= "models.par" } Band2Band (Model=
NonlocalPath ParameterSetName=("phonon-assisted" ))
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Sharif Uddin
Is there anyone who can help me to install sentaurus TCAD?
Question 7 Answers
Mohammed WAhiduzzaman Rony
I am trying to install TCAD for my thesis work but its not working properly, Maybe I am missing something.Tried to gure it out but I couldn't.
Sharif Uddin
“can any body help to provide the link of Sentaurus TCAD?”
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Mike Schwarz
Hi I want to simulate MS contact considered fermi level pinning in Sentaurus Tcad. Is there anyone?
Question 4 Answers
Son Muyeong
Son Muyeong
It's same content of title. I want to simulate MS contact considered fermi level pinning. But I don't know how to care about it. Would I just
calculate about Schottky barrier considered fermi level pinning calculation equation and then command that value Schottky barrier in
Electrode section?? Or Is there function in Sentaurus Tcad? If you have that experience or you want to discuss it, Please give me your
comment. Thank you in advance.
Mike Schwarz
“You are welcome”
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M. Ehteshamuddin
How to include Field Induced Quantum Con nement (FIQC) effect in Sentaurus TCAD while simulating a basic Line-TFET structure?
Question 0 Answers
M. Ehteshamuddin
Quantization effect consists of two parts: 1) Carrier density correction at Si/SiO2 interface - that is taken into account by calibrated density
gradient or MLDA model in Sentaurus. 2) FIQC. How do I incorporate FIQC in simulations? Any suggestions would be appreciated.
View
Son Muyeong
How to change voltage-controlled switch model parameter in Sentaurus Tcad?
Question 1 Answer
Son Muyeong
Hi~! I want to change model parameter made in Sentaurus Tcad. I add information of voltage_controlled switch in Sentaurus Tcad. I want to
change model parameter vh, vt. But I don't know how to change it.... Is there anyone who know how to change model parameter??
Son Muyeong
“I got it!! If there are someone who want to know how to change parameter, I answer my questions myself. To change model
parameters, you should make scf(spice circuit le). There may be scf le in sentaurus like Hsim folder... And then change its
parameter there. for example) in scf les that I made... PSET Diode1 DEVICE Diode PARAMETERS vj=0.5 END PSET It's over. I
changed vj(junction voltage) model parameter value. Only you want to change some parameter value, you just write what parameter
and value which you want to change in PARAMETERS section. And then you command...” more
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Zhenhua Wu
Sentaurus TCAD - How to solve the problem about "Unable to save dataset" ?
Question 1 Answer
Roy Li
When I ran SDevice commands, the message as below popped out : Unable to save dataset 'QW_eNumberOfBoundStates': interface
'Source/BarrierS' not found in grid le n26_msh.tdr ! There are regions Source and BarrierS de ned in the SDE command le : (sdegeo:create-
cuboid (position 0 0 0 ) (position Ls W H ) "Silicon" "Source" ) (sdegeo:create-cuboid (position Ls 0 0 ) (position (+ Ls Lbari) W H ) "Oxide"
"BarrierS" ) I don't know what's wrong. Is there any one who can give me a hand? Thanks.
Zhenhua Wu
“Hi Roy, I have encoutered the same problem. I carefully checked the interfaces de nition but no issue was found. Finally the error
was elimilated by xing an error NOT in the interface settings BUT in the contact settings. I don't understand why the error message
related to interface, anyway the above remedy works for me.”
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Son Muyeong
How to extract device model le in sentaurus/silvaco TCAD, so that it can use for spice simulation ?
Question 3 Answers
Shikhar Gupta
I modeled a MOSFET in TCAD (Sentaurus/Silvaco). I want to use this MOSFET for designing the circuit in the spice, but don't know how to
extract the model le of the device. Can anyone tell me how to extract the model le or how to create circuits of the modeled MOSFET ?
Son Muyeong
“Okay... Thank you for replying me. If I nd the solution, I will tell you! Thank you!!!”
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L. Arivazhagan
How to de ne HOMO - LUMO level in sentaurus TCAD materials ?
Question 2 Answers
Biki Teron
Hello everyone i was not able to nd where to add HOMO and LUMO level in custom new materials addition in sentaurus TCAD. Please
suggest me.
L. Arivazhagan
“In silvaco tcad, syntax is there for homo and lumo. You please search in sentaurus TCAD manual. ”
View
Shailendra Singh
I am working on vetical TFET on sentaurus tool facing problem in implementing dual metal as a singla gate?
Question 4 Answers
Shailendra Singh
can somebody help me in regarding code of sdevice to make two gate with different workfunction run them as common.
Shailendra Singh
“thanku for you valuable reply.i will apply these code to fetch fruitful result.”
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Son Muyeong
How to stop vsource pulse in Sentaurus Tcad??
Question 0 Answers
Son Muyeong
I want to make stop giving vsource pulse in Tcad. When I give voltage pulse in System section of the sdevice command. ex) System{
Vsource_pset v1 (n2 n0) { pwl= 0 0 3e-8 0.5 5e-8 0.5 } } I want to stop giving pulse after 5e-8(s). In my experiment, When I simulated until 7e-
8(s), Voltage of n2 node keep giving 0.5V.... I want to stop giving pulse, So charge moves out other nodes... How can I stop it?? Is there anyone
who know the way????
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Son Muyeong
How to stop vsource pulse in Sentaurus Tcad??
Question 0 Answers
Son Muyeong
I want to make stop giving vsource pulse in Tcad. When I give voltage pulse in System section of the sdevice command. ex) System{
Vsource_pset v1 (n2 n0) { pwl= 0 0 3e-8 0.5 5e-8 0.5 } } I want to stop giving pulse after 5e-8(s). In my experiment, When I simulated until 7e-
8(s), Voltage of n2 node keep giving 0.5V.... I want to stop giving pulse, So charge moves out other nodes... How can I stop it?? Is there anyone
who know the way????
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Son Muyeong
I want know dram reading operation & giving oating pulse in Sentaurus??
Question 0 Answers
Son Muyeong
Hi I want to know two! 1) Read operation in DRAM, At rst, precharge bitline_capacitor (VDD/2) . Then give WL high pulse to open channel. And
then there will be charge sharing between storage_capacitor and bitline_capacitor. At that time, drain must be oating state. It means no
voltage given. I think that only charge sharing must be happen. So we must not give any voltage in drain(bitline). Is this right?? 2)If it is right, I
want to give oating voltage in Sentaurus. In sdevice code, Vsource v0(n1 n0) { pw1 0 0 ...} (n0 is ground) I want to know oating voltage
give... more
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P. Vigneshwara Raja
Convergence error in Gate-Lag transient simulation in Sentaurus TCAD?
Question 2 Answers
P. Vigneshwara Raja
Currently, I am performing Drain-Lag and Gate-Lag transient simulations of GaN HEMT in Sentaurus TCAD. Drain-lag simulations are
successfully carried out by pulsing the drain voltage from 0 to 10V and xed gate voltage (0V) using mixed-mode simulations. However, the
gate-lag response is not obtained because of convergence error. In the system section, a xed voltage source (at 10V) for drain and a pulsed
source at gate terminal (from -4 to 0V) are considered. "Math" and "Solve" sections are de ned as similar to the related examples. In gate-lag
simulation, the gate voltage is pulsed... more
P. Vigneshwara Raja
“Thank you Soumyaranjan Panda for the response. I refer the page. with thanks vignesh”
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Son Muyeong
I wonder exact difference about inner voltage and outer voltage in TCAD Sentaurus?
Question 6 Answers
Son Muyeong
I simulated Mosfet in sentaurus. In sdevice commands, I set capacitor on source. I want check dram's operation. So I wanted to check by
giving voltage pulse in gate and drain. And then I think that capacitor on source will be charged. and then source voltage changed. When I give
pulse in gate and drain port, By inspecting section when I see the voltage. outer voltage is exatly same that i gave pulse. but inner voltage is
not same about it. for example I gave pulse 2V in gate , gate's outer voltage is 2V but Inner voltage of gate is zero. 1) Is it mean that given
outer voltage is... more
Son Muyeong
“Thank you, Sir Mr.Abdelhalim Zekry! I made mistake in my SDE structure. I made wrong gate contact. So I think that I must revise
gate contact section. Time duration is about 4e-11 s. My VDD condition is 3V. There are inner voltage and outer voltage in TCAD
inspection. So actually I don't know exactly difference between them. I ask about it in synopsys homepage. When I get answer, I will
tell you about it. First I will make revised contact. Thanks your sincerely interest! I really thank you.”
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Neha Paras
TCAD Sentaurus Workbench - making an SDevice simulation converge?
Question 3 Answers
Isha Lodhi
I am simulating a PIN device in Sentaurus Workbench (TCAD), and my simulation results show a huge electric eld peak. (I apply a negative
DC voltage of 1300V to see if the PIN recti er can withstand it). I have been trying to model the real device better (try to get a reduced electric
eld distribution in my simulation) by modifying the resistance of certain regions (ion implanted regions) but my simulation has problems
converging whenever I change any parameters (the resistance of regions or if I add interface charge to it). I can add and modify the slightest
thing and then it will... more
Neha Paras
“Hi Isha, I think convergence problem is mostly due to meshing re nement and the sensitive areas present in the device. Use
CNormPrint command to know the areas where your device encounters problem. Hope it will help!”
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Lee Lee
Anyone have tcad eeprom or oating gate nand ash program example?
Question 0 Answers
Lee Lee
do anyone have oating gate nand ash or eeprom tcad simulation example? sentaurus simulator... i want to charge on oating gate by
biasing 20 program voltage but it doesn't work so can you give me?..
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Soumendu Sinha
Why does the effect of back gate bias reduce when buried oxide thickness is increased in FDSOI MOSFET? How does it depend upon the
channel length?
Question 0 Answers
Soumendu Sinha
We did some simulations for short channel and long channel FDSOI MOSFET using Sentaurus TCAD tool. The effect of back gate bias on
threshold voltage is more prominent in short channel devices with thinner buried oxide. How can this be physically explained? Does this hold
true for PDSOI MOSFETs as well?
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Lee Lee
How to generate sentaurus simulation region mesh?
Question 0 Answers
Lee Lee
In sentaurus simulation, do you know how to generate region mesh? i want to generate mesh in cylindrical nitride layer. not a cuboid function. i
make cylinder nitride structure de ne-re nement-widow ~~..etc
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Lee Lee
Nand ash trap assisted tunneling physics in simulation?
Question 0 Answers
Lee Lee
i want to make tat mechnism only simulation by sentaurus simulator. i will make the 3d sonos cell sde. and i will insert single trap in the midlle
of tunneling oxide. but i don't know what physics i have to use in sdevice. can you help me? i want what components i should use in non-local
tat mechanism . for example i found the physics code recombination( srh(.. hurkx.. but i don't the what i have to insert.
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Lee Lee
Nand ash tat simulation by sentaurus simulator?
Question 0 Answers
Lee Lee
i want to make tat mechnism only simulation by sentaurus simulator. i will make the 3d sonos cell sde. and i will insert single trap in the midlle
of tunneling oxide. but i don't know what physics i have to use in sdevice. can you help me? i want what components i should use in non-local
tat mechanism . for example i found the physics code recombination( srh(.. hurkx.. but i don't the what i have to insert.
View
Ehtisham Muhammad
While running sdevice the error is coming with the message "the step size is less than minimum step size". What does itmean?
Question 1 Answer
Tika ram Pokhrel
Sentaurus Device
Ehtisham Muhammad
“Check your minimum time step in your numerical method statement and the solve statement where bias is applied. It is 'dt' in
silvaco device. i dont know what is it in sentaurus.”
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Girija Shankar Sahoo
Could I run two program on Sentaurua TCAD at the same time???
Question 4 Answers
Amira Nabil
I want to run two different program on Sentaurus TACD one of them take along time (may be 6 hours ) and the other doesn't take a time (about
1 minute). Is It OK to run these two program at the same time or an error will occur???
Girija Shankar Sahoo

“Yes, if your system has more than one processor you can do it.”
View
Adhithan Pon
Hello! please How simulate a simple AlGaN/GaN MOS-HEMT structure using Sentaurus TCAD ?
Question 4 Answers
Manish Verma
in simulating the structure, current is increasing with sweeping of draqin voltage but not sweeping with gate voltage. actually a constant
current i am getting with sweeping of gate voltage. i think there would be a leakage path. am i right or something else is the problem i am
doing.?
Adhithan Pon
“Dear Manish Verma, I am not more familiar with this HEMT, but the suggestion is to use basic physics, like instead of using
polarisation use xed charge. (convergence issues also reduced ). We also face the same problem initially (if I did any small change
in inbuilt structure or physics) but after that, I Just remove the high-level physics section. Moreover, the polarisation model is making
more problem so ,if possible you can try with the same effect in terms of effective xed charge. It may give the proper result to
you.!!!!!! (Just call Adhi)”
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Babak Jamali
Sentaurus TCAD: How to model terahertz plasma-wave effect in FET channel?
Question 0 Answers
Babak Jamali
I am simulating eld-effect transistors (MOSFETs, etc.) to investigate the plasma-wave effect inside the channel when an incident Terahertz
wave modulates the gate-source. I am not sure how to correctly model the gated channel as a 2D Electron Gas (2DEG) where hydrodynamic
Euler equations govern the carrier density oscillations in the channel. Do I need to add a speci c term in the "Physics" section in my SDevice
command code? I am using TCAD Sentaurus
command code? I am using TCAD Sentaurus.
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Manish Verma
Interface charge on GaN/SiO2 surface in MIS device?
Question 1 Answer
Isha Lodhi
How do we calculate the natural (no external stress) polarization charge on the surface of GaN? I am simulating a PIN recti er in TCAD
Sentaurus. The device is GaN-SiO2-Al. I need to input an interface charge between the GaN and SiO2 in order to simulate the polarization
charge of GaN. But I am not sure what its value should be. Any papers or leads would be greatly appreciated.
Manish Verma
“i am too looking for the same problem, mam... if you nd anything regarding to this problem, kindly acknowledge me.”
View
Abdelhalim Zekry
Is it possible to use sentaurus/silvaco tool to successfully perform device modelling of carbon nanotube FET?
Question 1 Answer
Ashima Sharma
Please provide me some information/links regarding device modelling of CNTFET to initiate my research. Thank you in advance!
Abdelhalim Zekry
“I think the simulation given in the paper at the link:In uence of gate overlap engineering on ambipolar and high ... can help using
Silvaco to analyse the carbon nanotube FET. For more questions you can ask the rst author Ahmed Shaker. He is a member of the
RG. Best wishes”
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John Tiessen
How do I use Sentaurus 'gjob' for Project Submission?
Question 0 Answers
John Tiessen
When I try to use 'gjob' to submit jobs locally for Sentaurus Device I run into the problem that it only accepts numbers after the '-job' argument.
I would really prefer to not have to run each node sequentially by hand so if anyone knows how to direct 'gjob' to the pre-processed le it would
be greatly appreciated. gjob documentation: Usage: gjob [options] -job NAME (FILENAME | PROJECT) Description: Runs the given job, or
project's node locally Example: gjob -job 2 @STDB@/folder/project Options: -h[elp] : displays this help message -v[ersion] : displays version...
more
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Anurag Singh
How can I model a graphene layers ( lms) in Sentaurus TCAD?
Question 3 Answers
Jacek Podgórski
I know that the similar topic was discussed on this forum. Unfortunately, link with solution is inactive. So, maybe anybody of you have
information about graphene from this link http://albertociarrocchi.com/index.php/2015/09/13/graphene-monolayer-simulation-in-sentaurus-
tcad/ or have information what data should I place into .par le.
Anurag Singh
“Hello Mark! How can i use this model of the Paper in Sentaurus TCAD.?”
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Frank Sill Torres
Is it possible to use Density Gradient (QuantumPotential) for transient "HeavyIon" simulation in Sentaurus?
Question 2 Answers
Frank Sill Torres
Hi, I'm using Synopsys Sentaurus for the analysis of the impact of particle strikes on MOS devices. Therefore, I'm applying the Heavy Ion
Model and transient simulations. Further, I intend to add a density gradient model (using the eQuantumPotential switch in Physics and solve
sections). If the ' eQuantumPotential' option is switched off, the transient simulation passes without any problems. However, if 'HeavyIon' and
'eQuantumPotential' are switch-on together, I run into convergence problems. I tried already to improve the mesh ("Mesh re nement") and
reduce the step size (down to... more
Frank Sill Torres

“Thank you a lot for this very comprehensive material. Good to know that the answer to my question is a positive one.”
View
Fan Diao
How to extract Medici simulation result in SWB TCAD?
Question 1 Answer
Fermi Liu
Dear All, I use Medici tool in Sentaurus Workbench environment, but can't extract simulation result onto SWB. I need a help! Thanks. My partial
code are: ------------------------------------------------------------------------------------------------- log out. le=n@node@_med.ivl solve v(drain)=0.05 elec=drain
vstep=0.25 nstep=20 solve elec=drain continu c.vstep=0.1 c.vmin=0.1 c.imax=1e-13 c.vmax=50 c.dvmax=1 log close extract name=BV
exp="@v(drain)" cond="@i(drain)>1e-13)"... more
Fan Diao
“How Medici can be integrated in SWB?”
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Wu Xiqi
How to add a new self-de ned material in Sentaurus SDEVICE (or SPROCESS)?
Question 0 Answers
Wu Xiqi
I am working on a project which is modelling the structure of Ion Sensitive Field Effect Transistors (ISFETs) with TCAD. I want to de ne a new
material which has similar properties as the electrolyte model. What should I do in Sdevice (or Sprocess) to add and use this new material?
View
Aparna Sathya Murthy
How to x an invalid character error with TCAD Sentaurus installer?
Question 1 Answer
Saif Khawaja
See attached le.

“What is it during Installation Saif ???”
View
View
Saif Khawaja
Where to get a baby steps Synopsys Sentaurus TCAD installatoin guide?
Question 0 Answers
Saif Khawaja
I have looked around and found some that aren't for CentOS or jump too quickly for a beginner. I only have two large les:
sentaurus_vN_2017.09-SP2_common.spf and sentaurus_vN_2017.09-SP2_linux64.spf, and a few .txt/pdfs that jump too much, and am not
sure what to do from there.
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What kind of models(ballistic, Thermodynamic Model, Mobility model ect) for CNTFET do I need to select on Sentaurus TCAD?
Question 1 Answer
Kim Junyeong
Hello! I'm working on a project for CNTFET! I asked about how I can add cnt on sentaurus TCAD few days ago. To add cnt on Sentaurus, I know
that I have to check some models. I just plan to study about I-V characteristics of top gate CNTFET. If so, I need to select models to add new
material(CNT). would you guys let me know what kind of models do I need for the project?

“https://nano.stanford.edu/stanford-cnfet-model (SPICE) https://arxiv.org/pdf/1511.01356.pdf (material)
https://arxiv.org/pdf/1503.04397.pdf (device )”
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Gaurav Musalgaonkar
Breakdown simulation in Sentaurus TCAD is not converging?
Question 8 Answers
Gaurav Musalgaonkar
I am doing PN junction breakdown simulation in Sentaurus TCAD. For the breakdown analysis, I am using "Avalanche (OkutoCrowell)"
statement in the physics section. However, my simulation stops (or did not converge) when reaches a breakdown point. Does anyone know
what the problem at breakdown point is? Why it stops converging and how to correct it?
Gaurav Musalgaonkar
“I am not getting you. could you please elaborate more? I am just talking about how to achieve convergence in sentaurus TCAD for
breakdown simulations. The external resistor will de nitely modify the breakdown voltage but the error will be negligible.”
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Mike Schwarz
How can I add cnt(carbon nanotubes) or something like new materials on Sentaurus TCAD?
Question 3 Answers
Kim Junyeong
I'd like to analysis properties of CNTFET for my graduation project. where can I nd parameter les of carbon nanotubes? Ive already read
manual but there's no way to nd accurate properties of CNT. Is it possible to use properties just on the internet commonly?
Mike Schwarz
“Hi, it is possible to add new materials with properties (explained in manual) to TCAD environment. There is a le named
"datexcodes.txt". Here you can add the new material. Within SDE you can call the new material. In Sdevice you can load in the header
an additional *.par le, which contains the physical model parameters for the new material. That´s it...”
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Sushanta Bordoloi
How to convert 2DEG density from per cm^3 to per cm^2?

Question 0 Answers
Sushanta Bordoloi
In sentaurus TCAD, the 2DEG density is given in terms of per cm^3, while in the literature it (2DEG density) is represented in terms of per cm^2.
What is the method/process to convert the density from per cm^3 to per cm^2?. Thank you!
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M. Ehteshamuddin
How to de ne 2-D contact in case of Sentaurus device simulator for a two dimensional strcuture which is possible in Silvaco's Atlas ???
Question 2 Answers
M. Ehteshamuddin
In Atlas we can create 2D ohmic contact for a 2D structure, and it becomes schottky the moment we de ne the metal electrode workfunction.
In Sentaurus, all contacts de ned for the 2D structure is of edge type..Is something similar to Atlas is possible???
M. Ehteshamuddin
“Thanks alot for the help”
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Sankatali Venkateswarlu
Is there anybody using Sentaurus Interconnect for Mixed mode simulations?
Question 0 Answers
Sankatali Venkateswarlu
Is there anybody using Sentaurus Interconnect for Mixed mode simulations?
View
Sushanta Bordoloi
How to calculate Source Resistance in AlGaN/GaN HEMT using Sentaurus TCAD?
Question 4 Answers
Sushanta Bordoloi
What is the procedure to calculate the source resistance in AlGaN/GaN HEMT device using Sentaurus TCAD ? The manual has not mentioned
any way out to compute the series resistance. Kindly suggest. Thank you
Sushanta Bordoloi
“Thanks for the reply.”
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Long Li
Hello everyone, I want to know the solution of the convergence problem in Sentaurus TCAD ,and How to see the output of the cNormPrint.
Thanks a lot?
Question 0 Answers
Long Li
I met the convergence problems in Sentaurus TCAD when simulated a CMOS sensor , I tried to change the meshing of the device, but it does
not work. Is there any principle in the mesh for convergence problem.And I also want to know to know the output of the keyword cNormPrint.
Thanks a lot!
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Jiayou Liu
How to do the implantation & dopant activation in Germanium with TCAD Sentaurus process ?
Question 0 Answers
Jiayou Liu
Hi I' tl ki thi b t f d bl I d t d th MC i l t ti b t ft th l li th
Hi everyone, I'm recently working on this but faced some problems. I managed to do the MC implantation, but after thermal annealing, the
depth pro le looks like a "step function", which is unreasonable. Can anyone please give me a hand ? Thanks a lot !!
sprocess cmd code.txt
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Atabek Atamuratov
Is it possible to measure quantum capacitances in MOSFETs by using TCAD Sentaurus?
Question 0 Answers
Atabek Atamuratov
With decreasing the sizes of MOSFET to nanometer scale the quantum effects is increased and quantum capacitance can be appreciable. Is it
possible to estimate(calculate) this quantum capacitance between transistor's contacts in TCAD Sentaurus?
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Amgad Al-saman
How can I calibrate the TCAD Sentaurus simulator?
Question 8 Answers
Nandhakumar Subramani
Hi, I want to calibrate the TCAD Sentaurus simulator in order to match the measured AlN-GaN HEMT DC IV characteristics and the simulated
one. I'm using a simple drift diffusion model. For the mobility, I would like to use either constant mobility model or doping dependence (Arora
Model). In the literature, there are no arora model parameters available for the GaN, AlN and AlGaN materials. For the High eld saturation,
Caughey Thomas model is used. mu_high eld = mu_low eld / ( 1 + (mu_low eld E / vsat)^beta )1/beta mu_low eld^(-1) =
mu_dop(mu_max)^(-1) + mu_Enorm^(-1) + mu_cc^(-1) I... more
Amgad Al-saman
“As far as I know, the drift-diffusion model doesn't re ect a lot of processes that take place in such devices. As it does not account
for self-healing, hot electrons and velocity overshot. What is relevant to the question I think the best way for modelling HEMT
structures it to write a programme in Matlab or another suitable programming language.”
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Mohammad Azharul Islam
Is it possible to simulate a oating/point charge near the gate region of a MOSFET without any physical connection between them in
Sentaurus TCAD?
Question 5 Answers
Lets say, I want to measure some X amount of charge using a MOSFET. But there is no physical connection between the MOSFET gate and the
charge. The charge is sort of oating near the gate of the MOSFET. Can I simulate this scenario in TCAD? if yes how am I able to do that?

“Thank you all for your suggestions. Tillmann Krauss> Could you please tell me in which folder of the Example Library? Atabek
Atamuratov> I am trying to measure charge of a oating node above the gate.”
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How small or thin wire (like antenna) I can create on Sentaurus TCAD for a simutation?
Question 4 Answers
I am trying to attach an wire like antenna to the gate of my MOSFET so that I can provide my input to the wire instead of the gate.

“Thank you for your answers. Is there any references I may have - Raju Hajare , Beddiaf Zaidi ?”
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Nilesh Jaiswal
How to create and add Mg-dopants in order to use p type GaN based power devices in TCAD sentaurus simulation?
Question 0 Answers
Nilesh Jaiswal
I am using TCAD sentaurus Simulation for GaN based device, so Mg-implantation table is not available in $ImpLib le.
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Marco Mandurrino
Hello everyone, this is my rst question here.I want to know the difference between the two pieces of code?
Question 3 Answers
Gan Lurong
I am emulating the memory, added read and write timing. I want to see the performance diagram at different times.With the second code, I can
extract different moments.But the nal time -- current graph of the two pieces of code is different, which is confusing to me.I need your help.
Thanks a million.
Marco Mandurrino
“Dear Gan, unfortunately I never used such model. Anyway, after a fast check on the manual, your code seems ne... If you want, let
me know in case you'll face with some problems. Marco”
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Swati Sajee Kumar
How can I provide voltage to three different but dependent gates using "system" command in Sentaurus Workbench?
Question 4 Answers
Swati Sajee Kumar
I have been working on devising a Vertical Triple Metal Gate stacked oxide TFET using TCAD. However in the Sentaurus work bench, I have got
stuck with the doubt of - How to include the three gates in the Solve section of S-Device simulation le? Also on how to include the three gates
in the "system" section and provide them with the same voltage? However I haven't got any proper syntax for the "system" section either. It
would be really helpful if someone could help me with the syntanx for the "system" section and also on how to provide dependent voltage to all
the three gates.
Swati Sajee Kumar

“Thanks a lot, that was really helpful. ”
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Swati Sajee Kumar
Error message in Synopsys Sentaurus TCAD SDevice: Newton didn't converge, trying again with smaller step... ?
Question 8 Answers
Neha Paras
Hello everyone.. Can anyone please explain this error/message i m getting while simulating my device structure in TCAD. After showing this
message, it nishes simulations when the step size becomes smaller than MinStep and eventually exiting due to failure! Because of this the
plot trace is incomplete! Thanks
Swati Sajee Kumar

“You can also use this command line under math section AcceptNewtonParameter ( -RhsAndUpdateConvergence
RhsMin = 1.e-5 UpdateScale = 1.e-2 ) followed by AcceptNewtonParameter ( ReferenceStep = 1.e-3 ) in Quasistationary section
”
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Ismail Bouhadda
I want to work on ISFET high-k material, So can i used Sentaurus simulation? Is it support high-k?
Question 3 Answers
Ahmed Musa Dinar
I want to work on ISFET high-k material, So can i used Sentaurus simulation? Is it support high-k? Thanks
Ismail Bouhadda
“Dear Dr. Dinar, sure you can use some high k material such as Hf02, TiO2, SiN....”
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Nitish Kumar
How to remove NDC effect from GaN HEMT when using Hydrodynamic transport model?
Question 1 Answer
Deepti Chahar
I am a Ph.D scholar from India. I am working in the eld of HEMT for high-power and high-frequency applications. Initiating my study in this
eld requires the calibration of the DC characteristics that are in agreement with experimental data. I am using Atlas (Silvaco's device
simulator). I have calibrated my device using Drift-Diffusion(DD) transport model, but it's not suf cient for hot electrons simulations. Therefore,
I further want to calibrate the device using Hydrodynamic(HD) transport model. I have some queries while simulating the device with HD
model. Device Dimensions... more
Nitish Kumar
“Don't solve Temperature equation. Solve Poisson, electron, hole, eTemperature and hTemeprature only.”
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Nitish Kumar
How to perform 3D TCAD Sentaurus simulations for large devices say 100 nm channel length?
Question 3 Answers
Ankit Choudhary
This is taking too much time to simulate and I need to nd a workaround.
Nitish Kumar
“Hello Chang-Ki. Do you know how to include source, drain and gate in the 2-D simulations. Currently, I am not able to consider the
material of the S,D and G in simulation. I have applied S,D and G as boundary conditions. I want see how the temeprature eld varies
in S, D and G of power devices e.g. GaN, Ga2O3 MOSFETs. Thank you, Nitish”
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Ajay Singh
How can we run load pull method for LDMOS to get Output Power Power Added Ef ciency in Sentaurus?
How can we run load pull method for LDMOS to get Output Power, Power Added Ef ciency in Sentaurus?
Question 0 Answers
Ajay Singh
Dear All, I am using Sentaurus TCAD, I want to run Load Pull method for LDMOS to calculate the power added ef ciency, output and input
power.
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Abdelhalim Zekry
What is the method followed by TCAD simulators for calculating the capacitance from small signal analysis?
Question 8 Answers
Prashanth Kumar Manda
How the small signal analysis is implemented in TCAD device simulators.
Abdelhalim Zekry
“Dear Prashanth, Sorry for not taking care of your questions. You get a distorted current sine wave form because you have to reduce
your ac voltage till you obtain as pure sine wave as possible. In this case you can evaluate the phase difference between the current
and the voltage. You may also vary the frequency to get an easy observable phase difference. Beat wishes.”
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Ashok Ray
Dissipated power simulation in GaN HEMT using PostTemperature ( Sentaurus TCAD)?
Question 0 Answers
Ashok Ray
The sentaurus manual has an option of calculating IV (power) dissipation using PostTemperature in physics section of GaN HEMT simulation.
The Thermal Simulation using above command is converging, but i am unable to get a plot for the same as to what keyword to be used in plot
section to obtain such a plot.
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Tobias Appel
Does anyone know of a freeware modeling/simulation program to model a eld effect device as well as it's optical properties?
Question 4 Answers
Mark Altwerger
I need to be able to model a device that has optical changes while a bias is applied. I don't have access to TCAD sentaurus or comsol. Please
let me know if you have an idea and you need more information? Thanks, Mark
Tobias Appel
“Hey Mark, the answer of Arfan Ghani not correct. I give you the link to ELMER: https://www.csc. /web/elmer/binaries Kind Regards
Tobi”
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Ashok Ray
Can anybody help me with problem of 'nodes' showing status as failed even after all the simulation(s) are converged?
Question 0 Answers
Ashok Ray
I am trying to carry out simulation of GaN/AlGaN HEMT. While doing so in Sentaurus Work Bench, some of the nodes fail even after the drain
voltage is successfully ramped and solution being completely converged for those speci c nodes. The content of 'Job' le: Error: Child
process with pid '2244' got the signal 'SIGSEGV' (segmentation violation) g.job exits with status 1 The content of 'log' le: Writing plot
'n299_des.tdr' (TDR format) ... done.
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Bahare Marzban
Viewing quantization simulation results in Sentaurus TCAD?
Question 1 Answer
Rupam Goswami
Is there any way to view quantized energy levels in Sentaurus TCAD using vanDort quantization model?
Bahare Marzban
“Hey Rupam, did you nd the answer to this question? I also need some help. Best, Bahar”
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Shubham Tayal
Can anyone help me to know how to extract N-curve of 6T SRAM in Sdevice environment?
Question 0 Answers
Shubham Tayal
Hello Everyone, I want to study the N-curve for stability analysis of 6T SRAM in Sentaurus sdevice environment. can anyone help me to know
how to extract N-curve of 6T SRAM in Sdevice environment? Thankss in advance..
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Barsha Jain
How to add a new material in Synosys Sentaurus tool while working on sdevice environment?
Question 5 Answers
Barsha Jain
Hello everyone, I have designed my device in sentaurus process editor and would like to extract the I-V characteristics using sdevice. For the
same I wrote the code in sdevice environment. When I am running the code, it is showing "The material name "Al2O3" was not found in DATEX
!" What should I do for this. Do I need to add a .par le for Al2O3? If yes, How can I get the material parameters for Al2O3 to write a .par le for
the same. Can you guide me in this regard. Looking forward to your reply. Best Regards, Barsha Jain
Barsha Jain
“Thank you so much Sebastian for the help.”
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Barsha Jain
How to add a new material in Synosys Sentaurus tool while working on process editor?
Question 2 Answers
Barsha Jain
Hello everyone, I am working on Synopsys Sentaurus tool for the rst time and trying to write a code in process editor. I would like to add
Al2O3 (Aluminum Oxide)using deposit statement, but unable to know the form in which it will be accepted by the the sentaurus environment.
Can anyone help me with this? Looking forward to the responses. Thanks in advance.
Barsha Jain
“Thank you so much Mohamed. Best Regards, Barsha Jain”
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Nitish Kumar
How to calibrate simulation with experimental data?
Question 4 Answers
Nitish Kumar
I am using TCAD sentaurus to simulate GaN devices. Should I start by matching IdVg at low Vds? Could someone provide a reference
material/text for calibration?
Nitish Kumar
“Thank you Khaled, Beddiaf and Jun-Sik Yoon! Jun-Sik you mentioned about articles tting I-V using BSIM. Icould not any relevant
article.Coyld you please refer any relevant article which I can use. Also, I am almost able to match Vt value at Vd=50 mv. However,
my Off current is very high in experimental data but I am getting a very low Ioff in simulations. For example, Ioff,exp= 10-3 mA/mm
and Ioff,sim=10^-14 mA/mm. Can someone suggest what should I do? I tried introducing band to band tunneling simple model
using Si parameters as GaN parameters are not available, but it makes Ioff more...” more
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Soumyaranjan Panda
I want to make parameter le of MoS2 in TCAD Sentaurus. So please tell me how to make parameter le of MoS2?
Question 4 Answers
Neeraj Goel
I started modifying silicon parameter le. but there a long list of those parameters and some parameters are not available in any research
paper. so how can i modify that le so that it become parameter le of MoS2. If anyone have parameter le of mono layer Mos2 then please
share it with me. I will be obliged to you.
Soumyaranjan Panda
“Dear Neeraj, As far as my knowledge is concerned its not possible to do simulations using TCAD. Because sentaurus TCAD shows
3D DOS. And its also dif cult to make parameter le some people are trying to make it by extracting data in ATK or Quantum
Espresso. ~regards Soumya”
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Raúl Rodríguez del Rosario
Why is the current in HEMT measured in mA/mm ?
Question 2 Answers
Sunyoulei Sunyoulei
What does the "mm" represent? is the length from source to drain?
Raúl Rodríguez del Rosario

“Hi, in this manner the current is independent of the gate width and you can compare it with other devices, even if these devices do
not have the same gate width. Regards, Raúl.”
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Mike Schwarz
Hello, Can anyone please tell what is default mole-fraction TCAD sdevice simulation takes for SiGe
Question 5 Answers
Nilotpal Choudhury
I am using 2016 M-version of Sentaurus TCAD. There I need to de ne some region with default mole fraction of SiGe. So I need to know about
the default mole fraction that TCAD usually takes. Thank you.
Mike Schwarz
“Hi, for InGaAs you can de ne it as follows: Physics( Material = "InGaAs" ) { MoleFraction(xFraction = 0.47 Grading = 0)}”
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Jun-Sik Yoon
How can I get this software?
Question 2 Answers
Erman Azwan
Hi!!! good morning sir, I'm Erman from Universiti Teknologi Petronas. Currently, I do my research on MOSFET but I have the problem with the
ft M i it d 't h thi ft S I dt d ll b ti ith i tit ti t f
software. My university doesn't have this software. So I need to nd any collaboration with any institution, agency or company to access for
this software for my research purpose. From my literature survey, the highly recommended software that I can use is SILVACO and Sentaurus.
Thank you
Jun-Sik Yoon
“If you are trying to test MOSFETs by changing some geometrical parameters and so on, the website "nanohub" from Purdue
University will be great. You can freely do whatever you want. SILVACO and Sentaurus are great device simulators. Both softwares
provide vast amount of material parameters tted to the analytic models. I think either one is OK. I suggest you ask them the price of
license after doing some trial versions.There are academic versions available for you, and these are pretty cheaper than commercial
ones. Sincerely, Jun-Sik Yoon”
View
Alexander Konovalenko
How to use sentaurus sdevice to extract model parameters?
Question 1 Answer
Sh Luo
I'm currently working on TSV(through silicon via) modeling, and try to get the electrical parameters (RLC) from sentaurus simulation. part of
my sdevice code: System { # c1,c2 are two sides of tsv, c3 is grounded substrate contact. TSV tsv_ (c1=f c2=m c3=b ) Vsource_pset vf ( f 0 )
{ dc = 0 } Vsource_pset vb ( b 0 ){ dc = 0 } Vsource_pset vm ( m 0 ){ dc = 0 } } Solve { #-a) zero solution Poisson Coupled { Poisson
Electron Hole } Quasistationary ( InitialStep=0.1 MaxStep=0.5 Minstep=1.e-5 Goal { Parameter=vf.dc Voltage=-3}
... more
Alexander Konovalenko
“A general question: if you want to extract Z and RLC parameters why do you assign .dc bias and not .ac?”
View
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Sen12 200 Questions With Answers in Sentaurus - Science Topic

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