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KSC5402D/KSC5402DT — NPN Silicon Transistor, Planar Silicon Transistor

December 2009

KSC5402D/KSC5402DT
NPN Silicon Transistor, Planar Silicon Transistor

Features D-PAK
• High Voltage High Speed Power Switch Application Equivalent Circuit

• Wide Safe Operating Area C

• Built-in Free Wheeling Diode 1


TO-220
• Suitable for Electronic Ballast Application
B
• Small Variance in Storage Time
• Two Package Choices; D-PAK or TO-220
E 1
1.Base 2.Collector 3.Emitter

Absolute Maximum Ratings TA=25°C unless otherwise noted

Symbol Parameter Value Units


VCBO Collector-Base Voltage 1000 V
VCEO Collector-Emitter Voltage 450 V
VEBO Emitter-Base Voltage 12 V
IC Collector Current (DC) 2 A
ICP *Collector Current (Pulse) 5 A
IB Base Current (DC) 1 A
IBP *Base Current (Pulse) 2 A
PC Power Dissipation(TC=25°C) : D-PAK* 30 W
: TO-220 50 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 to 150 °C
* Pulse Test: Pulse Width=5ms, Duty Cycle<10%

Thermal Characteristics TA=25°C unless otherwise noted


Symbol Parameter Rating Units
TO-220 D-PAK
RθJC Thermal Resistance Junction to Case 2.5 4.17* °C/W
RθJA Junction to Ambient 62.5 50 °C/W
TL Maximum Lead Temperature for Soldering Purpose 270 270 °C
; 1/8” from Case for 5 Seconds
* Mounted on 1” square PCB (FR4 ro G-10 Material)

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com


KSC5402D/KSC5402DT Rev. C0 1
KSC5402D/KSC5402DT — NPN Silicon Transistor, Planar Silicon Transistor
Electrical Characteristics TA=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown IC=1mA, IE=0 1000 1090 V
Voltage
BVCEO Collector-Emitter Breakdown IC=5mA, IB=0 450 525 V
Voltage
BVEBO Emitter-Base Breakdown IE=1mA, IC=0 12 14 V
Voltage
ICES Collector Cut-off Current VCES=1000V, IEB=0 TA=25°C 0.03 100 μA
TA=125°C 1.2 500 μA
ICEO Collector Cut-off Current VCE=450V, VB=0 TA=25°C 0.3 100 μA
TA=125°C 15 500 μA
IEBO Emitter Cut-off Current VEB=10V, IC=0 0.01 100 μA
hFE DC Current Gain VCE=1V, IC=0.4A TA=25°C 14 29
TA=125°C 8 17
VCE=1V, IC=1A TA=25°C 6 9
TA=125°C 4 6
VCE(sat) Collector-Emitter Saturation IC=0.4, IB=0.04A TA=25°C 0.25 0.6 V
Voltage TA=125°C 0.4 1.0 V
IC=1A, IB=0.2A TA=25°C 0.3 0.75 V
TA=125°C 0.65 1.2 V
VBE(sat) Base-Emitter Saturation IC=0.4A, IB=0.04A TA=25°C 0.78 1.0 V
Voltage TA=125°C 0.65 0.9 V
IC=1A, IB=0.2A TA=25°C 0.85 1.1 V
TA=125°C 0.75 1.0 V
Cib Input Capacitance VEB=8V, IC=0, f=1MHz 330 500 pF
Cob Output Capacitance VCB=10V, IE=0, f=1MHz 35 100 pF
fT Current Gain Bandwidth IC=0.5A, VCE=10V 11 MHz
Product
VF Diode Forward Voltage IF=1A TA=25°C 0.86 1.5 V
IF=0.2A TA=25°C 0.75 1.2 V
TA=125°C 0.6 V
IF=0.4A TA=25°C 0.8 1.3 V
TA=125°C 0.65 V

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com


KSC5402D/KSC5402DT Rev. C0 2
KSC5402D/KSC5402DT — NPN Silicon Transistor, Planar Silicon Transistor
Electrical Characteristics (Continued) TA=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
tfr Diode Froward Recvery Time IF=0.2A 540 ns
(di/dt=10A/μs) IF=0.4A 520 ns
IF=1A 480 ns
VCE(DSAT) Dynamic Saturation Voltage IC=0.4A, IB1=40mA @ 1μs 7.5 V
VCC=300V @ 3μs 2.5 V
IC=1A, IB1=200mA @ 1μs 11.5 V
VCC=300 @ 3μs 1.5 V
RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=20μs)
tON Turn On Time IC=1A, TA=25°C 110 150 ns
IB1=200mA, TA=125°C 135 ns
IB2=150mA,
tOFF Turn Off Time TA=25°C 0.95 1.25 μs
VCC=300V,
RL = 300Ω TA=125°C 1.4 μs
INDUCTIVE LOAD SWITCHING (VCC=15V)
tSTG Storage Time IC=0.4A, TA=25°C 0.56 0.65 μs
IB1=40mA, TA=125°C 0.7 μs
IB2=200mA,
tF Fall Time TA=25°C 60 175 ns
Vz=300V,
LC=200H TA=125°C 75 ns
tC Cross-over Time TA=25°C 90 175 ns
TA=125°C 90 ns
tSTG Storage Time IC=0.8A, TA=25°C 2.75 μs
IB1=160mA, TA=125°C 3 μs
IB2=160mA,
tF Fall Time TA=25°C 110 175 ns
Vz=300V,
LC=200H TA=125°C 180 ns
tC Cross-over Time TA=25°C 125 350 ns
TA=125°C 185 ns
tSTG Storage Time IC=1A, TA=25°C 1.1 1.2 μs
IB1=200mA, TA=125°C 1.35 μs
IB2=500mA,
tF Fall Time TA=25°C 105 150 ns
VZ=300V,
LC=200μH TA=125°C 75 ns
tC Cross-over Time TA=25°C 125 150 ns
TA=125°C 100 ns

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com


KSC5402D/KSC5402DT Rev. C0 3
KSC5402D/KSC5402DT — NPN Silicon Transistor, Planar Silicon Transistor
Typical Performance Characteristics

3.0
IB = 1A VCE = 1V
900mA
2.5
800mA
IC[A], COLLECTOR CURRENT

700mA 100 TJ=125℃


600mA

hFE, DC CURRENT GAIN


500mA
2.0 400mA TJ=25℃
300mA

1.5 200mA

100mA 10
1.0

0.5

IB = 0
0.0 1
0 1 2 3 4 5 6 1E-3 0.01 0.1 1

VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT

Figure 1. Static Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE


Figure 2. DC current Gain

VCE = 6V IC = 5 IB

100 TJ=125℃
10
hFE, DC CURRENT GAIN

TJ=25℃

1
10
TJ=125℃

TJ=25℃

0.1

1
1E-3 0.01 0.1 1 1E-3 0.01 0.1 1

IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT

Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation Voltage


VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

10
IC = 5 IB
IC = 10 IB

10

1
TJ=25℃
1
TJ=125℃
TJ=125℃

TJ=25℃

0.1

0.1
1E-3 0.01 0.1 1 1E-3 0.01 0.1 1

IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT

Figure 5. Base-Emitter Saturation Voltage Figure 6. Collector-Emitter Saturation Voltage

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com


KSC5402D/KSC5402DT Rev. C0 4
KSC5402D/KSC5402DT — NPN Silicon Transistor, Planar Silicon Transistor
Typical Performance Characteristics (Continued)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

10 1000
IC = 10 IB f=1MHz
Cib

CAPACITANCE [pF]
1 100
TJ=25℃

TJ=125℃
Cob

0.1 10
1E-3 0.01 0.1 1 1 10 100

IC[A], COLLECTOR CURRENT REVERSE VOLTAGE [V]

Figure 7. Base-Emitter Saturation Voltage Figure 8. Collector Output Capacitance

2.0 550
tfr [ns], FORWARD RECOVERY TIME

TJ=25℃
COLLECTOR VOLTAGE [V]

1.5

2.0A
1.0
1.5A 500

1.0A
0.4A
IC=0.2A
0.5

450
0.0 0.0 0.5 1.0
1E-3 0.01 0.1 1

IF [A], FORWARD CURRENT


IC[A], COLLECTOR CURRENT

Figure 9. Typical Collector Saturation Region Figure 10. Forward Recovery Time

10 IC=5IB1=2IB2
VCC=300V
PW=40μs
300
VFD [V], VOLTAGE

ton [ns], TIME

1 200
TJ=25℃

TJ=125℃ TJ=125℃

100 TJ=25℃

0.1
0.01 0.1 1 0.4 0.6 0.8 1.0 1.2 1.4

IFD [A], CURRENT Ic [A], COLLECTOR CURRENT

Figure 11. Diode Forward Voltage Figure 12. Resistive Switching Time, ton

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com


KSC5402D/KSC5402DT Rev. C0 5
KSC5402D/KSC5402DT — NPN Silicon Transistor, Planar Silicon Transistor
Typical Performance Characteristics (Continued)

850
IC=5IB1=2IB2 IC=10IB1=2IB2
VCC=300V VCC=15V
PW=40μs VZ=300V
2.0 800
LC=200μH

750

tsi [ns], TIME


toff [μs], TIME

700
1.5 TJ=125℃

650
TJ=125℃
TJ=25℃
600
TJ=25℃
1.0
550

0.4 0.6 0.8 1.0 1.2 1.4 0.4 0.6 0.8 1.0 1.2 1.4

Ic [A], COLLECTOR CURRENT Ic [A], COLLECTOR CURRENT

Figure 13. Resistive Switching Time, toff Figure 14. Inductive Switching Time, tsi

100 130

120
90 IC=10IB1=2IB2 IC=10IB1=2IB2
VCC=15V VCC=15V
VZ=300V VZ=300V
110
LC=200μH LC=200μH
80
tC [ns], TIME
tfi [ns], TIME

100 TJ=125℃
TJ=25℃ TJ=25℃
70
90

TJ=125℃
60 80

70
50

60
0.4 0.6 0.8 1.0 1.2 1.4 0.4 0.6 0.8 1.0 1.2 1.4

Ic [A], COLLECTOR CURRENT Ic [A], COLLECTOR CURRENT

Figure 15. Inductive Switching Time, tfi Figure 16. Inductive Switching Time, tc

450
IC=5IB1=5IB2
VCC=15V
400 V =300V
Z
30 LC=200μH
TJ=125℃ 350

300 TJ=125℃
tfi [ns], TIME
tsi [μs], TIME

25 250

TJ=25℃
200
IC=5IB1=5IB2
VCC=15V 150
VZ=300V TJ=25℃
LC=200μH
20 100

50
0.4 0.6 0.8 1.0 1.2 1.4 0.4 0.6 0.8 1.0 1.2 1.4

Ic [A], COLLECTOR CURRENT Ic [A], COLLECTOR CURRENT

Figure 17. Inductive Switching Time, tsi Figure 18. Inductive Switching Time, tfi

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com


KSC5402D/KSC5402DT Rev. C0 6
KSC5402D/KSC5402DT — NPN Silicon Transistor, Planar Silicon Transistor
Typical Performance Characteristics (Continued)

450 1.6
IC=5IB1=5IB2
VCC=15V
400 VZ=300V
LC=200μH 1.4
TJ=125℃
350

300 TJ=125℃ 1.2


tC [ns], TIME

tsi [μs], TIME


TJ=25℃
250
1.0

200
TJ=25℃

0.8
150
IC=5IB1=2IB2
VCC=15V
100 V =300V
0.6 L Z=200μH
C

50
0.4 0.6 0.8 1.0 1.2 1.4 0.4 0.6 0.8 1.0 1.2 1.4

Ic [A], COLLECTOR CURRENT Ic [A], COLLECTOR CURRENT

Figure 19. Inductive Switching Time, tc Figure 20. Inductive Switching Time, tsi

200
IC=5IB1=2IB2 IC=5IB1=2IB2
160 VCC=15V VCC=15V
VZ=300V 180 VZ=300V
LC=200μH LC=200μH
140
160

120 TJ=25℃ TJ=125℃


tC [ns], TIME
tfi [ns], TIME

140

100 120

TJ=25℃
TJ=125℃ 100
80

80
60

60
40
0.4 0.6 0.8 1.0 1.2 1.4 0.4 0.6 0.8 1.0 1.2 1.4

Ic [A], COLLECTOR CURRENT Ic [A], COLLECTOR CURRENT

Figure 21. Inductive Switching Time, tfi Figure 22. Inductive Switching Time, tc

10 40

1μs
10μs
PC[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT

50μs 30
5ms 1ms
1 DC

20

0.1

10

0.01 0
10 100 1000 0 25 50 75 100 125 150

VCE[V], COLLECTOR-EMITTER VOLTAGE TC[℃], CASE TEMPERATURE

Figure 23. Forward Bias Safe Operating Area Figure 24. Power Derating

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com


KSC5402D/KSC5402DT Rev. C0 7
KSC5402D/KSC5402DT — NPN Silicon Transistor, Planar Silicon Transistor
Physical Dimension

TO-220

9.90 ±0.20 4.50 ±0.20


1.30 ±0.10

(8.70)

2.80 ±0.10
(1.70)

+0.10
ø3.60 ±0.10 1.30 –0.05

18.95MAX.
(3.70)

15.90 ±0.20
9.20 ±0.20

(1.46)

(3.00)
(45°
)
(1.00)
13.08 ±0.20

10.08 ±0.30

1.27 ±0.10 1.52 ±0.10

0.80 ±0.10 +0.10


0.50 –0.05 2.40 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com


KSC5402D/KSC5402DT Rev. C0 8
KSC5402D/KSC5402DT — NPN Silicon Transistor, Planar Silicon Transistor
Physical Dimension (Continued)

D-PAK

Dimensions in Millimeters

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com


KSC5402D/KSC5402DT Rev. C0 9
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intended to be an exhaustive list of all such trademarks.
AccuPower¥ FPS¥ PowerTrench® The Power Franchise®
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Build it Now¥ FRFET® Programmable Active Droop¥
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SM
QFET®
TinyBoost¥
CorePOWER¥ Green FPS¥ QS¥
TinyBuck¥
CROSSVOLT¥ Green FPS¥ e-Series¥ Quiet Series¥
TinyCalc¥
CTL™ Gmax™ RapidConfigure¥
TinyLogic®
Current Transfer Logic™ GTO¥ TINYOPTO¥
EcoSPARK® IntelliMAX¥ ™ TinyPower¥
EfficentMax™ ISOPLANAR¥ Saving our world, 1mW/W/kW at a time™ TinyPWM¥
EZSWITCH™* MegaBuck™ SmartMax™ TinyWire¥
™* MICROCOUPLER¥ SMART START¥ TriFault Detect¥
MicroFET¥ SPM® TRUECURRENT¥*
® MicroPak¥ STEALTH™ PSerDes¥
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Fairchild Semiconductor® Motion-SPM™ SuperSOT¥-6 ®
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® SuperSOT¥-8
FACT OPTOPLANAR
® Ultra FRFET¥
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FAST® ®
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* VisualMax¥
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PRODUCT STATUS DEFINITIONS


Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications may change in
Advance Information Formative / In Design
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Preliminary First Production
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
No Identification Needed Full Production
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
Obsolete Not In Production
The datasheet is for reference information only.
Rev. I41

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com