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E-mail: john@rfic.co.uk
1 ABSTRACT
3.2 TWO ELEMENT RESONATOR CIRCUITS
This paper discusses the design of various types of Figure 1 shows a schematic diagram of a two-element
resonator that form the heart of any oscillator de- resonator. This circuit is seldom used in oscillators as
sign. the loaded Q will be very low as the source and load
The first section describes the different resonator impedances will directly load the tuned cir-
types including lumped, coaxial, microstrip and cuit.
dielectric. The following section deals with varactor 2. R
Q =
diodes, including design equations, temperature & ω. L
loaded Q performance. In the final section the defi-
nitions of loaded and unloaded Q are described
with a worked example and design techniques on Q
transformations.
2 INTRODUCTION
The resonator is key to the design of an oscillator. The
loaded Q determines the phase noise performance of ω. L
Q =
the oscillator. The oscillator frequency will determine 2. R
to some degree the type of resonator eg At microwave
frequencies resonators can be coaxial or microstrip and
at low frequencies the resonators are almost always Figure 1 Schematic of a two element, lumped resona-
made up of lumped components. tor, together with loaded Q equations.
⎜ ⎟ ⎜ ⎟
⎝ 2πf ⎠ ⎝ 2π * 1E 9 ⎠
C= = = 0.05pF
3.1 LUMPED ELEMENT L 477E − 9
Lumped element resonators can be configured to form
either a low, high or band pass filter, and the given
number of elements is directly related to the Q and loss Although the inductor is a realised value the capacitor
of the resonator. The simplest resonators can consist of could not be realised except in perhaps inter-digital
just two elements an inductor and a capacitor ie:- form. This could be used if the oscillator is designed
for fixed frequency but the value is impracticable as a
varactor in a voltage controlled oscillator.
The situation can be improved by using more than two
elements eg 3 or 4 as described in the next section.
Sheet
2 of 20
XL
Q=
R
C shunt
2
R2 + XL
XC =
2X L
X C = 2. X L
XC
Q=
R
2
R2 + XC
XL =
2X C
R
QC =
XC
X L = 2. X C
1
X L = 2π . f . L & XC =
2π . f . C
1 1
Ce =
2C shunt (ω o R o )
2 where Q e =
1 1 1
+ −
C series (ω o R oC shunt )2 + 1 QL Qu
−1 / 2
⎛ 2R Q ⎞ 2C series
X cshunt = R o ⎜⎜ o e − 1⎟⎟ C shunt = Ce −
⎝ X L ⎠ (ω o R oC series )2 + 1
b
Figure 4 Schematic diagram of the alternative four
element lumped resonator
λ /4
The unloaded Q of the resonator is a function of the Qcc = Conductor contribution to unloaded Q
conductor losses, the dielectric losses and the physical
dimensions of the coaxial cable ie: = 8.398.b. f
1 1 1
= + wher e C = Conductor & D = Dielectric
QU Q C QD Overall diameter of typical
semi - rigid cable is 0.141" or 3.58mm
The Q contributi on from conductor is due to energy For above example b = 3.58mm (0.000358) ∴ Qcc = 92.95
lost due to current flow in the conductors and is given by
The dielectric of the cable also effects the Q of the
b resonator and is given by:
π .f .μ .σ .Ln
Q C = 2. a
1 1 Q d = Dielectric loss contribution to unloaded
+
a b 1
Q= loss tangent of dielectric material
tan.δ
where μ = permeabili ty and σ = conductivi ty of the conductors
tan δ for PTFE ~ 0.0004 @ 10GHz
The Q contributi on from the dielectric that separates
the conductors is given by 1
∴ Qd = = 2500
σ 0.0004
QD = tan.δ (Loss Tangent/Di ssipation factor) =
2π .f.ε r .ε o
1 1 1 1
σ = conductivi ty of dielectric ie ; Total unloaded = +
ρ Q Q cc Q d
ε r = relative permitivit y; ε o = 8.854x10 -12 Fm -1
1 1
= + = 89.6
92.95 2500
3.6 DESIGN EXAMPLE OF A COAXIAL CABLE
RESONATOR Note the Qcc term dominates the overall Q factor of the
The following example is for the design of a coaxial resonator at this frequency.
resonator to operate in an oscillator at 1GHz. The reso-
nator is made from semi-rigid coaxial cable that con-
tains a dielectric of PTFE, which has a relative permit-
tivity of ~ 2.2 and a tanδ of 0.0004.
2.99E8
90
Resonator length = 1E9 . = 5.04cm
2.2 360
Material εr ρ tanδ
Copper - 1.56E-8Ω.m - W d
Gold - 2.04E-8Ω.m -
Silver - 1.63 E-8Ω.m -
Nylon 3.0 109-1011Ω.m 0.012@3GHz λ/4
PTFE 2-2.1 1E-16 0.0004@10GHz Inner surface plated
Polythene 2.25 >1014Ω.m 0.0004@10GHz
HD
PVC flexi 4.5 109-1012Ω.m
≡ L
C
Table 1 Design data for a range of materials com-
R
monly used in the construction of coaxial cables.
The parameters shown are relative permittivity
(εr), resistivity ρ (1/ρ = conductivity) and tan delta
(tanδ).
Figure 6 Schematic diagram of a coaxial resonator
showing the key dimensions. Note the resonator is
3.8 COAXIAL RESONATOR [3]
plated with silver except for one end to allow it to be
A quarter-wave coaxial resonator is formed, by plating grounded.
a piece of dielectric material with a high relative per-
mittivity using a highly conductive metal.
The expression for the unloaded Q of such a resonator
is
A cylindrical hole is formed along the axis of a cylin-
der of high relative permittivity dielectric material. All ⎛ W⎞
Ln⎜1.079. ⎟
surfaces, apart from the end surface, are coated with a = k. fo. ⎝ d⎠
⎛ 1 1⎞
L
good conductor to form the coaxial resonator. The 25.4⎜ + ⎟
physical length of the resonator is equal to one quarter ⎝ W d⎠
the wavelength (90 degrees electrical length) in the
medium filling the resonator. The diagram (Figure 6) where W = outside diameter in mm,
below shows the key dimensions of a coaxial resona- d = inside diameter in mm
tor. k = 240 for a silvered dielectric with ε r of 38.6
= 200 for a sivered dielectric with ε r of 88.5
⎛ W⎞
Input Impedance (Z in ) =
60
.Ln⎜1.079. ⎟
εr ⎝ d⎠
8.Zo.l. ε r
Inductance = l = Physical length in mm
25.4.π 2 3 x10 8
l. ε r
Capacitance =
25.4 * 2 * 3 x10 8.Zo
4.Zo.Q
Resistance =
π
inductors. They will only realise an ‘ideal’ inductor c/fo 3E8 / 800E6
Wavelength = = = 60.36mm
over a narrow range as shown in the diagram Figure 7. εr 38.6
⎛ W⎞
Ln⎜1.079. ⎟
Q = k. fo . ⎝
d⎠
=
⎛ 1 1⎞
25.4⎜ + ⎟
⎝ W d⎠
XC
⎛ 0.006 ⎞
Ln⎜1.079. ⎟
F req u en cy → ⎝ 0.00246 ⎠
Q = 240. 800E6 . = 415.7
⎛ 1 1 ⎞
25.4⎜ + ⎟
Figure 7 Frequency response of a coaxial resonator. ⎝ 0.006 0.00246 ⎠
The first region shows an area of inductance followed
by a point of resonance followed by a region of ca- λ g .f o 1
Self Resonant Frequency = . MHz
pacitance. The resonator is usually used below the 4 l
self-resonant frequency so that in a VCO the varactor
can be used to resonate with the coaxial resonator. 0.6036 * 800 1
= . = 1241MHz
4 0.0973
In order to use the coaxial resonator as a ‘ideal’ induc-
tor the resonator must be used below the self-resonant Therefore the coaxial line is
0.0973
= 0.161λ g long
frequency. 0.6036
a
34 ⎛a ⎞
FGHz = .⎜ + 3.45 ⎟ =
a (mm) . ε r ⎝ L ⎠
34 ⎛ 3.8735 ⎞
b .⎜ + 3.45 ⎟ = 7.313GHz
3.8735. 30 ⎝ 3.479 ⎠
R = 2 * Zo * β
α 2 = k ρ1 − k .ε r 2
2 2
0
⎛ Q ⎞ QU
Q L = ⎜⎜ U ⎟⎟ − 1= β
The propagation constant common ⎝ 1+ β ⎠ QL
to regions 4 and 6 is : -
=
1
β
[tan (
−1 α1
β
)
cothα1.L1 + tan−1 (
α2
β
1
cothα 2 .L 2 )] ⎛ Q ⎞ QU 5000
Q L = ⎜⎜ U ⎟⎟ − 1= β − 1= 4
⎝ 1+ β ⎠ QL 1000
Coupling Coefficient
45
40
C 35
L 30
25
≡
|B|
20
15
R 10
5
Figure 10 Dielectric resonator coupled to a micro-
strip line and the corresponding circuit diagram.
The resistor L simulates the coupling of the L-C 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
resonant circuit of the dielectric resonator. D (mm) Center to Center
Calculation of loaded Q:
Figure 11 Plot of coupling coefficient (β) with dis-
tance from the centre of the puck to the centre of
the microstrip line in mm
Sheet
9 of 20
Therefore, in our example, the puck would be placed at divide through by 2cos β .l
a distance of 7.15mm from the puck centre to the mi-
cro-strip line centre.
⎡ Zl . 2 cos β .l Zo . j 2 sin β .l ⎤
⎢ 2 cos β .l + 2 cos β .l ⎥
3.13 TRANSMISSION LINE RESONATOR [9] Zo . ⎢ ⎥
⎢ Zl . j 2 sin β .l + Zo . 2 cos β .l ⎥
Over a narrow bandwidth L-C lumped components can
be realised using short-circuit and open-circuit trans- ⎣⎢ 2 cos β .l 2 cos β .l ⎦⎥
mission lines. If we analyse a transmission line termi-
nated in a load ZL we can define the transformed im- ⎡ Zo . j sin β .l ⎤
pedance in terms of the characteristic line impedance ⎢ Zl + cos β .l ⎥
and the electrical length of the transmission line. The Zo . ⎢ ⎥
⎢ Zo + Zl . j sin β .l ⎥
diagram below (Figure 12) shows a transmission line
⎢⎣ cos β .l ⎥⎦
loaded with ZL.
⎡ Zl + Zo . tan β .l ⎤
ZL Z ( in ) = Zo . ⎢ ⎥
Z (in) → T.L Z o ⎣ Zo + Zl . tan β .l ⎦
Z (in ) =
V
=
[
v 1e + jβ .l + v 2e − jβ .l ]
I 1
[
v 1e + jβ .l − v 2e − jβ .l ] ⎡ Zl + Zo. tan β . l ⎤
Zo Z (in) = Zo. ⎢ ⎥
⎣ Zo + Zl. tan β . l ⎦
V2 Z − Zo
== L
V1 Z L + Zo = jZ o tan β . l ( Short circuit)
V ⎡ (Zl + Zo ).e + jβ .l + (Zl − Zo ).e − jβ .l ⎤ We can now plot the impedance (Figure 13) of the
∴ Z (in ) = = Zo.⎢ ⎥ shorted length of transmission line vs electrical length
⎣⎢ (Zl + Zo ).e − (Zl − Zo ).e − ⎥⎦
+ jβ .l jβ .l
I
and we get the following graph, which shows how the
transmission line equates to lumped capacitance and
⎡ Zl (e jβ .l + e − jβ .l ) + Zo(e jβ .l − e − jβ .l ) ⎤ inductance with resonance’s in between.
Z (in ) = Zo.⎢ jβ .l − jβ .l ⎥
⎣ Zl (e − e ) + Zo(e jβ .l + e − jβ .l ) ⎦
In general Z(in) = R(in) + jX(in) For S/CCT R(in) = 0 ;
X(in) = Zotanβ.L
(e jβ .l + e − jβ .l ) = 2 cos β .l
Zotanβ.L is purely reactive varies between - ∞ & + ∞
(e jβ .l − e − jβ .l ) = j 2 sin β .l as L varies
⎡ Zl .e jβ .l + Zo.e jβ .l + Zl .e − jβ .l − Zo.e − jβ .l ⎤
∴ Z ( in ) = Zo.⎢ jβ .l jβ .l − jβ . l ⎥
⎣ Zl .e + Zo.e − Zl .e + Zo.e − jβ .l ⎦
Sheet
10 of 20
X = Z o tan β . l
← λg λg 3λg/4 λ g/2 λg/4 0
Similarly, for a transmission line terminated by an
β =
2π open circuit we can repeat the analysis, but we divid-
1 1
λg
ing through by ZL. Note Zo/ZL tends to zero ie:-
ω.l
ϑ = β. l =
v
= ⎜⎛ ⎟⎞ ω
l
⎝ v⎠
Z (in) → T.L Z o ZL V=M ax
θ = β.L l=0
2π 3π/2 π π/2 at O/cct
2 2 ZL = ∞
⎡ Zl Zo . tan β .l ⎤
⎢ + ⎥
Zo .⎢ Zl Zl
⎥
Zo Zl . tan β .l
⎢ + ⎥
Figure 13 Plot of impedance against length of a ⎣ Zl Zl ⎦
short circuited transmission line. The plot shows
how the reactance of the transmission line varies
between inductive and capacitive reactances with ⎛ 1 ⎞
= jZ o ⎜⎜ ⎟( Open circuit)
resonant frequency regions in between. ⎝ [tan β .l ] ⎟⎠
θ = β.L l=0
(4) If θ ≅ π/2 , 3π/2 | X | goes to a maximum:- 2π 3π/2 π π/2
|X | 2 2
L //C 4
4 3 4
3
θ
2
⎛ 1 ⎞
⎜ ⎟
⎝ 2πf ⎠
Calculation of W/h (width of micro-strip/substrate
= C ∴ C = 0.466pF thickness) for a given characteristic impedance and
L
effective relative permitivity:
⎛ 1 ⎞ 2π
Zin = - j.Zo⎜⎜ ⎟⎟ where β = Solve for l For Z o ≤ 44 - 2ε r
⎝ tanβ .l ⎠ λg
Literature on the subject is very scarce so a basic de- Transmission lines may be used as single resonators
sign formula was used to get the initial dimensions and capacitively coupled to the active device, but also they
the final dimensions were optimised during RF simula- may be configured as a micro-strip band-pass filter.
tions. The basic principle involves using open circuit trans-
mission lines of electrical length 180 degrees, which is
The basic formula for the inter-digital capacitor is equivalent to a ‘tuned circuit’ parallel resonator. What
given by:- tends to differ in the topographies are the ways in
which the resonators are coupled together. The resona-
C = 0.83 (N F − 1).L tors can be end coupled or parallel coupled using the
Where NF = Number of fingers gaps between them as the low value coupling capaci-
L = Length of fingers in cm tors. It is also possible to use inter-digital capacitors to
C = Capacitanc e in pF generate coupling capacitors less than 1pF
CD
= 600um long fingers CJ =
(V + φ )γ
diode:-
1.5
CD
0.5 CJ = rearrange to give CD = C J .(V + φ )γ
(V + φ )γ
0
0 0.5 1 1.5
Finger Length mm
2 2.5 3 = 1E -12 (4 + 0.7) 0.75 = 3.19pF
γ Cj
C J ( V2 ) ⎡ V1 + φ ⎤
TR = = ⎢ ⎥
C J ( V1 ) ⎣ V2 + φ ⎦ Figure 17 Simplified model of a typical varactor
diode with parasitic reactance removed.
where CJ(V1) = junction capacitance at V1;CJ(V2) =
junction capacitance at V2 (V1>V2). The resulting Q for the above circuit is given by :-
3.20 CIRCUIT Q
The Q of the varactor can be very important, because 2πfC.Rp 2
Q=
the varactor usually directly forms the tuned circuit Rs + Rp + (2πfC) 2 Rs.Rp 2
and the overall Q is dominated by the worst Q factor.
The Q of tuning diode capacitors falls off at high fre-
quencies because of the series bulk resistance of the Typically Rs = 1Ω & Rp = 30x10 9 Ω
silicon used in the diode. The Q also falls off at low
frequencies because of the back resistance of the re- Therefore for a MA/COM MA46H071 we would ex-
verse-biased diode. pect the following Q’s at different frequencies as
shown in the table below:
The equivalent circuit of a tuning diode is often shown
in the form given below in Figure 16. f(GHz) Q
0.05 3500
Rp 2 88
6 30
Rs Ls Ls’
The degradation of Q at microwave frequencies means
that the varactor, has to be lightly coupled, or Q trans-
Cj
formed in order not to load the resonant circuit, lower-
ing the loaded Q with the resultant degradation in
Cc phase noise performance.
The following graph (Figure 18) of the varactor diode
frequency response shows that at low frequencies the
Q is dominated by the parallel term ie Qp = 2πf.Rp.C
Figure 16 Equivalent circuit of a typical varctor diode and at high frequencies by the series term Qs =
together with case and lead parasitic components. 1/(2πfRs.C).
100000
Compensatin Varactor
g
10000
Vin
1000
R
100
10
3.22 TEMPERATURE COMPENSATION We can take the specified Q values for inductors and
A popular method of temperature compensation in- capacitors from the data sheets and calculate the
volves the use of a forward bias diode. The voltage equivalent series or parallel resistance that distinguish
drop of a forward biased diode decreases as the tem- the component from an ‘ideal’ component to one with
perature rises, therefore applying a changing voltage to a finite Q. Once the resistance has been calculated, the
the tuning diode. For the circuit to be effective the circuit can be simplified down to a single component
compensating diode must be thermally coupled to the or a series/parallel combination of two circuits, to al-
varactor to be corrected. Figure 19 shows a method low calculation of the unloaded circuit Q. The follow-
for temperature compensating a varactor diode.
Sheet
15 of 20
ing example (shown in Figure 20) shows a simple L-C 4.2 LOADED Q
tuned circuit but with losses added. The loaded Q of a resonant circuit is dependent on
three main factors:
RIND=163KΩ
(1) The source impedance (Rs).
(2) The load impedance (RL).
L ~ 2.5uH (3) The component Q.
RC=318KΩ
Q =100 @ 100MHz
The circuit used in the example of section 3.5.1 is to be
loaded in a 50-ohm system as shown in Figure 21.
C = 1pF
Q = 200 @ 100MHz
Rs = 50Ω RRES=108KΩ
Figure 20 Simple L-C circuit with component
losses added
L ~ 2.5uH
RL=50Ω
The equivalent parallel loss resistance for each com- Q =100 @ 100MHz
ponent was calculated as follows-
C = 1pF
Q
R PL = Q.ω o .L and R CP = Q = 200 @ 100MHz
ω o .C
200
The addition of the source and load impedances will
= 163KΩ and R CP = = 318KΩ degrade the loaded Q of the circuit as they will effec-
2π * 100E 6 * 1E −12
tively be in parallel with the high impedance resonant
circuit as shown below in Figure 22.
Parallel equivalent resistance = R LP //R CP
L ~ 2.5uH
163K * 318K RRES=108KΩ
= = 108K Q =100 @ 100MHz Requ = 24.99Ω
163K + 318K
To improve the loaded Q, given a restraining source Rp = Q.Xp = 10 * 2π * 100E6 * 2.6E−6 = 15.7KΩ
and load impedance, we could alter the value of Xp.
This however, results in either very high inductors, or Rs * RL
very low capacitors. 15707 = From previous calculations RL = 108KΩ
Rs + RL
If we are restrained from altering the value of Xp we
can either use a tapped L or C transformer or coupling Rs * 108KΩ
L or C. 15707 = solve for Rs = 18.37KΩ
Rs + 108KΩ
C1 * C2
Therfore C1= 18 * C2 and = 1pF
C1 + C2
L = 2.5uH
2
⎛ C1 ⎞
Rs' = Rs⎜1 + ⎟
⎝ C2 ⎠ C 2=
18pF
R L = 108K Ω
Tapped L circuit
C 1=
1.055pF
R s = 50Ω 2
⎛ C1 ⎞
n Rs' = Rs⎜1 + ⎟
n1 RL ⎝ C2 ⎠
Rs
2
⎛ 18 ⎞
Rs' = 50⎜1 + ⎟ = 16K3Ω
⎝ 1.055 ⎠
2
⎛n⎞
Rs' = Rs⎜ ⎟ 18pF * 1.055pF
⎝ n1 ⎠ C1//C2 = ~ 1pF
18pF + 1.055pF
Equally we could use a coupling capacitor between the 4.5 DESIGN EXAMPLE FOR A VARACTOR
source impedance and resonant circuit such that the CONTROLLED RESONATOR
resistance will equal 16KΩ. Consider the varactor resonator shown below in
Figure 26. The capacitor combination can be simpli-
Required coupling capacitor reactance at 100MHz fied to a single capacitor that then forms a parallel
resonant circuit with the inductor. In this example, we
= 16KΩ - 50Ω ~ 16KΩ assume a source impedance of 50ohms.
1
∴ C coupling = = 0.1pF
2π * 100E 6 * 16E 3
Rcdiode= 2.65Ω
The addition of a coupling capacitor to the circuit is
shown in Figure 25.
Cdiode ~ 1pF
Q =30 @ 2GHz
L = 2.5uH L ~ 7.6nH
Q =150 @ 1GHz
C ~5pF
Cc=0.1pF
RIND=7163Ω Q = 100 @ 5GHz
RL = 108KΩ RC=0.06Ω
Rs = 50Ω
⎛ Q ⎞
Insertion loss (dB) = - 20log ⎜⎜1 − L ⎟⎟ Figure 27 Simplified varactor controlled resona-
⎝ Q U ⎠
tor for use at 2GHz
where Q L = loaded Q and Q U = unloaded Q
Sheet
18 of 20
-8
Now we can calculate the equivalent loss resistance
and the unloaded Q of the circuit:
-10
0.2 2.2 4.2 6.2 8
Equivalent loss resistance across the Frequency (GHz)
resonant circuit is 7163Ω // 3319Ω = 2268Ω
=
2268
= 23.7 The loaded Q is lower than the unloaded Q due to the
2π * 2E 9 * 7.6E −9 damping effect of the low value source impedance. An
oscillator with a resonant circuit with a Q of 0.24 will
We can see that the low Q of the inductor is going to be very unsatisfactory, so a means of increasing the
dominate the unloaded Q of the parallel circuit. Now, loaded Q is required. We cannot do much about the
if we load the circuit with 50-ohm source and load tuned circuit, but we can modify the source and load
impedances, (as shown in Figure 28) we can calculate impedances either by the used of a C/L tapped trans-
the loaded Q of the circuit. former or by the use of coupling capacitors. For this
example we shall consider the use of coupling capaci-
RS = 50Ω RRES=2268Ω RL = 50Ω
tors on the varactor circuit. Figure 30 shows the im-
plementation of coupling capacitors.
Coupling Coupling
RS = 50Ω C
L ~ 7.6nH RRES=2268Ω C
Total parallel resistance to give a Q of 10 = Finally a lumped element resonator with varactor diode
was given as an example in designing a resonator to
X .QL = Rp ∴ Rp = 2π * 2E 9 * 7.6E -9 * 10 = 95.5Ω give a loaded Q of 10 and at the same time an accept-
able insertion loss of ~4dB.
1
=
1
+
1
+
1
∴ Rp = 198Ω 4.7 REFERENCES
Rp Rs RL 2268 [1] Oscillator Design and Simulation, Randall W Rhea,
Value of series capacitor =
1
= 0.4pF
1995 ,Noble Publishing, ISBN 1-884932-30-4, chap 4.
2π * 2E 9 * (198)
[2] RF Design Guide, Peter Vizmuller, 1995, Artech-
This value of series coupling capacitor is very small house, ISBN 0-89006-754-6, p237.
but can be realised at microwave frequencies by the
use of a inter-digital microstrip capacitor. The coupling [3] Trans-Tech Application Note 1008,1010 & 1015,
capacitors were added to the CAD model and analysed from www.alphaind.com.
to confirm a Q of ~ 10, the plot is shown in Figure 31.
[4] Microwave Circuit Design – Using Linear and
Predicted insertion loss: Nonlinear Techniques ,George D Vendelin,Anthony M
Pavio and Ulrich L Rohde, 1990. Wiley – Interscience
⎛ Q ⎞ ⎛ 10 ⎞ ISBN 0-471-58060-0, p 403.
loss (dB) = - 20log⎜⎜1 - L ⎟⎟ = - 20log⎜1 - ⎟ = 4.76dB
⎝ QU ⎠ ⎝ 23.7 ⎠
[5] Dielectric Resonators, D Kajfez & P Guillon, 1990,
Vector fields, ISBN 0-930071-04-2.
Loaded Q
0
DB(|S[2,1]|) * [6] Microwave Engineering, David Pozar, 1993, Addi-
-2
Varactor son Wesley, ISBN 0-201-50418-9, p354-358.