Semiconductor Diodes 2

Semiconductor Diodes 2
1. Generally the value of ac resistance is ________ the value of dc resistance at the same
operating point.
A. smaller than
B. larger than
C. the same as
D. unrelated to
Answer: Option A
Explanation:
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2. The forward characteristics curve of a diode grows in ________ form.

A. linear
B. exponential
C. logarithmic
D. sinusoidal
Answer: Option B
Explanation:
3. An increase in temperature of a semiconductor can result in a ________ in the number of free

electrons in the material.
A. substantial increase
B. substantial decrease
C. slight decrease
D. no change
Answer: Option A
Explanation:
4. In the atomic lattice the ________ and ________ form the nucleus.
A. electrons, neutrons
B. electrons, protons
C. neutrons, protons
D. None of the above

Answer: Option C
Explanation:
5. Ge and Si have a(n) ________ coefficient in forward bias.

A. positive temperature
B. negative temperature
C. absolute temperature
D. temperature free
Answer: Option B
Explanation:
6. The term ________ is often used when comparing the resistance level of materials.
A. permittivity
B. inductivity
C. conductivity
D. resistivity
Answer: Option D
Explanation:
7. The reverse recovery time of most commercial switching diodes is in the rang e of ________.
A. picoseconds
B. a few nanoseconds
C. several microseconds
D. milliseconds
Answer: Option B
Explanation:
8. Diodes are connected ________ to increase the current-carrying capacity.
A. in series
B. in parallel
C. in parallel-series

Answer: Option B
Explanation:
9. The ________ the current through a diode, the ________ the dc resistance lev el.
A. higher, lower
B. lower, lower
C. lower, higher
D. higher, higher
Answer: Option C
Explanation:
10. The heavier the current in a Zener diode in reverse bias, ________ dynamic resistance value.
A. the more the
B. the less the
C. there is substantially more
D. there is no change in the

Answer: Option B
Explanation:
11. In n-type material the ________ is called the majority carrier.

A. electron
B. hole
C. proton
D. neutron
Answer: Option A
Explanation:
12. Any electron that has left its parent atom has ________ energy state relative to any electron in
the atomic structure.
A. the same
B. a lower
C. a higher
D. an undefined
Answer: Option C
Explanation:
13. Varying the ________ can control the location of the Zener region.
A. forward current
B. doping levels
C. forward voltage
D. dc resistance
Answer: Option B
Explanation:
14. The ac resistance of a diode is the ________ of the characteristic curve at the Q -point of
operation.
A. reciprocal of the slope
B. slope
C. midpoint
D. average value
Answer: Option A
Explanation:
15. The potential at which the characteristics curve vertical rise occurs is commonly referred to as
the ________.
A. offset
B. threshold
C. firing potential
D. All of the above

Answer: Option D
Explanation:
16. The reverse saturation current Is will just ________ in magnitude for every 10° C increase in
temperature.
A. double
B. remain the same
C. halve
D. triple
Answer: Option A
Explanation:
17. The intensity of LED is greatest at ________ degrees and the least at _____ ___ degrees.
A. 0, 90
B. 45, 90
C. 0, 45
D. 90, 180
Answer: Option A
Explanation:
18. Introducing those impurity elements that have ________ valence electrons cr eates the n-type
material.
A. 0
B. 3
C. 4
D. 5
Answer: Option D
Explanation:
19. The reverse-bias current ________ with the increase of temperature.

A. decreases
B. increases
C. remains the same

Answer: Option B
Explanation:
20. The test current in a Zener diode IZT is the current defined by the ________ power level.
A. 0.25
B. 0.5
C. 0.75
D. 1.00
Answer: Option A
Explanation:
21. The temperature coefficient can be ________ for different Zener levels.
A. positive
B. negative
C. zero
D. All of the above

Answer: Option D
Explanation:
22. The diffused impurities with ________ valence electrons are called acceptor atoms.
A. 0
B. 3
C. 4
D. 5
Answer: Option B
Explanation:
23. A(n) ________ is the simplest of semiconductor devices.

A. diode
B. transistor
C. operational amplifier
D. SCR
Answer: Option A
Explanation:
24. The reverse-saturation current level is typically measured in ________.

A. pA
B. A
C. mA
D. A
Answer: Option B
Explanation:
25. The depletion width ________ in the forward bias, which results in having a majority flow across
the junction.
A. widens
B. remains unchanged
C. shrinks
D. widens and shrinks alternatively

Answer: Option C
Explanation:

Semiconductor Diodes 2

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Semiconductor Diodes 2

2. The forward characteristics curve of a diode grows in ________ form.

3. An increase in temperature of a semiconductor can result in a ________ in the number of free

D. None of the above

5. Ge and Si have a(n) ________ coefficient in forward bias.

D. None of the above

B. the less the

C. there is substantially more

D. there is no change in the

11. In n-type material the ________ is called the majority carrier.

D. All of the above

B. remain the same

19. The reverse-bias current ________ with the increase of temperature.

C. remains the same

D. None of the above

D. All of the above

23. A(n) ________ is the simplest of semiconductor devices.

24. The reverse-saturation current level is typically measured in ________.

D. widens and shrinks alternatively

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