BU508AF

BU508AF

TV Horizontal Output Applications

1 TO-3PF
1.Base 2.Collector 3.Emitter

NPN Triple Diffused Planar Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCES Collector-Emitter Voltage 1500 V
VCEO Collector-Emitter Voltage 700 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 5 A
ICP *Collector Current (Pulse) 15 A
PC Collector Dissipation (TC=25°C) 60 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage IC = 100mA, IB = 0 700 V
BVEBO Emitter-Base Breakdown Voltage IE = 10mA, IC = 0 5 V
ICES Collector Cut-off Current VCE = 1500V, VBE = 0 1 mA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 mA
hFE * DC Current Gain VCE = 5V, IC = 4.5A 2.25
VCE(sat) * Collector-Emitter Saturation Voltage IC = 4.5A, IB = 2A 1 V
VBE(sat) * Base-Emitter Saturation Voltage IC = 4.5A, IB = 2A 1.5 V
* Pulse Test: PW = 300µs, duty cycle = 1.5% Pulsed

©2000 Fairchild Semiconductor International Rev. A, February 2000

 BU508AF
Typical Characteristics

100 10000
VCE = 5V

VBE(sat)[mV], SATURATION VOLTAGE

IC = 2 IB
hFE, DC CURRENT GAIN

10 1000

1 100

0.1 10
0.01 0.1 1 10 0.1 1 10 100

IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. Base-Emitter Saturation Voltage

10000 1000
VCE(sat)[mV], SATURATION VOLTAGE

IC = 2 IB f = 1MHz
Cob [pF], CAPACITANCE

1000

100

100

10 10
0.1 1 10 100 1 10 100

IC[A], COLLECTOR CURRENT V CB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance

80
100

70
PD [W], POWER DISSIPATIOAN

IC Max. (Pulsed)
IC[A], COLLECTOR CURRENT

60
10 1m
IC Max. (Continuous) s
50
DC
40
1

30

20
0.1

10

0
0.01 0 25 50 75 100 125 150 175 200
1 10 100 1000
o
TC[ C], CASE TEMPERATURE
VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Safe Operating Area Figure 6. Power Derating

©2000 Fairchild Semiconductor International Rev. A, February 2000

 BU508AF
Package Demensions

TO-3PF

5.50 ±0.20

3.00 ±0.20
4.50 ±0.20

15.50 ±0.20 ø3.60 ±0.20

(1.50)

10.00 ±0.20

°
10

23.00 ±0.20
26.50 ±0.20

22.00 ±0.20
0.85 ±0.03
14.50 ±0.20
16.50 ±0.20

16.50 ±0.20

1.50 ±0.20
2.00 ±0.20

2.50 ±0.20

2.00 ±0.20
2.00 ±0.20 2.00 ±0.20 2.00 ±0.20
14.80 ±0.20

4.00 ±0.20

+0.20
3.30 ±0.20
0.75 –0.10

5.45TYP 5.45TYP +0.20

[5.45 ±0.30] [5.45 ±0.30] 0.90 –0.10
5.50 ±0.20
3.30 ±0.20

2.00 ±0.20

Dimensions in Millimeters

©2000 Fairchild Semiconductor International Rev. A, February 2000

 TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™ HiSeC™ SuperSOT™-8

Bottomless™ ISOPLANAR™ SyncFET™
CoolFET™ MICROWIRE™ TinyLogic™
CROSSVOLT™ POP™ UHC™
E2CMOS™ PowerTrench® VCX™
FACT™ QFET™
FACT Quiet Series™ QS™
FAST® Quiet Series™
FASTr™ SuperSOT™-3
GTO™ SuperSOT™-6

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2000 Fairchild Semiconductor International Rev. E

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