SUD40N06-25L

Vishay Siliconix

N-Channel 60-V (D-S), 175C MOSFET, Logic Level


  
VDS (V) rDS(on) (
) ID (A)a
0.022 @ VGS = 10 V 30
60
0.025 @ VGS = 4.5 V 30

TO-252

Drain Connected to Tab

G D S

Top View
S
Order Number:
SUD40N06-25L N-Channel MOSFET

         


Parameter Symbol Limit Unit
Gate-Source Voltage VGS
20 V
TC = 25C 30
Continuous Drain Current (TJ = 175C)b ID
TC = 100C 30
Pulsed Drain Current IDM 100 A
Continuous Source Current (Diode Conduction) IS 34
Avalanche Current IAR 34
Repetitive Avalanche Energy (Duty Cycle  1%) L = 0.1 mH EAR 58 mJ
TC = 25C 75
Maximum Power Dissipation PD W
TA = 25C 1.4b, 2.5c
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 175 C

    

Parameter Symbol Limit Unit
Free Air, FR4 Board Mount 60
Maximum Junction-to-Ambient RthJA
Free Air, Vertical Mount 110 C/W

Maximum Junction-to-Case RthJC 2.0

Notes:
a. Package limited.
b. Free air, vertical mount.
c. Surface mounted on 1” x 1” FR4 Board, t  10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 70264 www.vishay.com
FaxBack 408-970-5600

S-57741—Rev. G, 31-Mar-98 2-1
SUD40N06-25L
Vishay Siliconix


       
 
 



Parameter Symbol Test Condition Min Typa Max Unit

Static

Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60

V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1.0 2.0 3.0

Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA

VDS = 60 V, VGS = 0 V 1
Zero
Z Gate
G Voltage
V l Drain
D i Current
C IDSS VDS = 60 V, VGS = 0 V, TJ = 125C 50 mA
A
VDS = 60 V, VGS = 0 V, TJ = 175C 150
On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 20 A
VGS = 10 V, ID = 20 A 0.022
VGS = 10 V, ID = 20 A, TJ = 125C 0.043
D i Source
S
Drain-Source
Drain O State
On S
On-State R i
Resistanceb rDS(on)
DS( ) W
VGS = 10 V, ID = 20 A, TJ = 175C 0.053

VGS = 4.5 V, ID = 20 A 0.025

Forward Transconductanceb gfs VDS = 15 V, ID = 20 A S

Dynamic
Input Capacitance Ciss 1800

Output Capacitance Coss VGS = 0 V,

V VDS = 25 V
V, f = 1 MH
MHz 350 pF
F
Reverse Transfer Capacitance Crss 100
Total Gate Chargec Qg 40 60
Gate-Source Chargec Qgs VDS = 30 V
V, VGS = 10 V
V, ID = 40 A 9 nC
C
Gate-Drain Chargec Qgd 10
Turn-On Delay Timec td(on) 10 20
Rise Timec tr VDD = 30 V
V,, RL = 0 9W
0.9 9 20
ns
Turn-Off Delay Timec td(off) ID
^ 20 A,
A VGEN = 10 V V, RG = 2 5W
2.5 28 50
Fall Timec tf 7 15

Source-Drain Diode Ratings and Characteristics (TC = 25C)

Pulsed Current ISM 20 A

Diode Forward Voltage VSD IF = 20 A, VGS = 0 V 1.0 1.5 V

Reverse Recovery Time trr IF = 20 A, di/dt = 100 A/ms 48 100 ns

Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.

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FaxBack 408-970-5600 Document Number: 70264

2-2 S-57741—Rev. G, 31-Mar-98
 SUD40N06-25L
Vishay Siliconix

 
       

Output Characteristics Transfer Characteristics

100 60
6V
VGS = 10, 9, 8, 7 V 5V

80
45
I D – Drain Current (A)

I D – Drain Current (A)

60
4V
30

40

TC = 125C
15
20
3V 25C
–55C
0 0
0 2 4 6 8 10 0 1 2 3 4 5 6

VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)

Transconductance On-Resistance vs. Drain Current

70 0.04
TC = –55C
60
r DS(on) – On-Resistance ( Ω )

0.03
g fs – Transconductance (S)

50 25C
VGS = 4.5 V
125C VGS = 10 V
40
0.02
30

20
0.01

10

0 0
0 12 24 36 48 60 0 15 30 45 60

ID – Drain Current (A) ID – Drain Current (A)

Capacitance Gate Charge

3000 10

2500 VDS = 30 V
V GS – Gate-to-Source Voltage (V)

8 ID = 20 A
Ciss
C – Capacitance (pF)

2000
6

1500

4
1000

Coss
2
500
Crss

0 0
0 10 20 30 40 50 60 0 10 20 30 40 50

VDS – Drain-to-Source Voltage (V) Qg – Total Gate Charge (nC)

Document Number: 70264 www.vishay.com
FaxBack 408-970-5600

S-57741—Rev. G, 31-Mar-98 2-3
 SUD40N06-25L
Vishay Siliconix

       

On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.5 100
VGS = 10 V
ID = 20 A
2.0
r DS(on) – On-Resistance ( Ω )

TJ = 150C

I S – Source Current (A)

(Normalized)

1.5
TJ = 25C
10
1.0

0.5

0 1
–50 –25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5

TJ – Junction Temperature (C) VSD – Source-to-Drain Voltage (V)

  

Drain Current vs. Case Temperature Safe Operating Area
50 200

100
Limited
40 by rDS(on)
I D – Drain Current (A)

I D – Drain Current (A)

100 ms
30 10

1 ms

20
10 ms
1
TC = 25C 100 ms
10
Single Pulse dc, 1 s

0 0.1
0 25 50 75 100 125 150 175
0.1 1 10 100
TC – Case Temperature (C) VDS – Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Case

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse

0.01
10–4 10–3 10–2 10–1 1 3

Square Wave Pulse Duration (sec)

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FaxBack 408-970-5600 Document Number: 70264

2-4 S-57741—Rev. G, 31-Mar-98
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