ELECTRON DEVICES

QUESTION BANK
PART - B ( 5 x 14 = 70 Marks)
31. a) Explain N-type and P-type semiconductor in detail with necessary diagrams.
Or
b) Draw and explain the energy band diagram for insulators, semiconductors and
Conductors
32) a) Describe how Input and output characteristics are obtained for Common base
Configuration.
Or
b) Explain the principle of working of NPN Transistor with neat diagram.
33) a) Compare the following ; JFET and MOSFET
E-MOSFET and D-MOSFET
Or
b) Explain the construction and working of MOSFET in depletion mode
34) a) Explain the working principle of Bridge rectifier
Or
b) Explain the working of zener voltage regulator

35) a) Explain in detail about fabrication of IC.

Or
b) Describe Diffusion and Ion implantation process in fabrication.

PART - B ( 5 x 14 = 70 Marks)

31. a) Explain intrinsic and extrinsic semiconductors.

or
b) Describe the breakdown mechanisms in diodes

32. a) Describe the transistor as a switch and amplifier

or
b) Derive the VI characteristics of NPN Transistor
33) a) Explain Enhancement mode MOSFET with relevant diagrams.
or
b) Describe MOS as a charge transferring device
 34)a) Describe the working of a DC regulated power supply
or
b) Explain the working of series voltage regulator.

35 ) a) Explain the process of transistor fabrication.

or
b) Describe the steps involved in IC fabrication.

PART - B ( 5 x 14 = 70 Marks)

31 a) Explain Zener Diode application with a neat diagram

or
b) Explain the VI characteristics of PN junction diode

32 a) Explain different configurations and their biasing in NPN transistor

or
b) Explain in detail Ebers Moll model of BJT

33 a) Explain the working of Enhancement mode MOSFET with VI characteristics

or
b) Explain the charge coupled device with neat diagrams

34 a) Explain the working of rectifiers in power supply

or
b) Explain the working principle of voltage regulator in detail

35 a) Explain IC fabrication steps with neat diagrams. (14)

or
b) Explain fabrication of Diode with relevant diagrams.

PART - B ( 5 x 14 = 70 Marks)

31. a) Describe the PN junction diode working and derive its current equation .
Or
b)Write short notes on backward diode and point contact diode
32. a) Describe in detail the cut off, active and saturation regions of a transistor with VI
characteristics.
 or
b) Explain the working of a transistor as a switch.
34. a) Explain the Drain and transfer characteristics of a field effect transistor
or
b) Explain MOS as a charge transferring device with neat diagram.

33. a) Explain the working of a Full wave rectifier with output waveforms
or
b) Explain the working of DC voltage regulator.
35. a) Explain about IC fabrication in detail.
or
b) Explain fabrication process involved in fabrication of Capacitor.
(14)

PART - B ( 5 x 14 = 70 Marks)
31. a) Explain the working of Varactor diode
Or
b) Write short notes on step recovery diode and PNPN diode

32. a) Explain the working of BJT in CE configuration.

or
b) Derive and explain Hybrid parameters of CE,CB and CC configuration
33.a) Describe the construction and working of JFET
or
b) Describe the working of a charge transferring device CCD with relevant
diagrams.
34. a) Describe the working of Half wave rectifier
or
b) Explain with a neat diagram the working of Regulated DC power supply.

35.a) Explain the fabrication of a PN diode with neat diagrams

. or
b) Describe the techniques involved in IC fabrication with block diagram.