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Physics Abstracts
62.20F
Résumé. 2014 Une analyse détaillée de la nucléation et de la croissance des macles, applicable aux matériaux C.F.C.
à basse énergie de défaut 03B3, aboutit à la conclusion suivante : la nucléation des macles n’est possible que si des
conditions déterminées, relatives à l’orientation, au sens de la contrainte appliquée, au taux de déformation, sont
satisfaites. L’étude de ces conditions et de leur interdépendance montre que le maclage mécanique est gouverné
par la nucléation et le développement de défauts d’empilement de nature extrinsèque. Le calcul de l’énergie néces-
saire à la nucléation des macles aboutit à une relation quantitative entre la taille des macles et l’énergie de défaut.
L’analyse est effectuée dans le cas où l’axe de traction (ou de compression) est [100] ou [111]. Les hypothèses sont
en bon accord avec les résultats expérimentaux relatifs à de nombreuses solutions solides C.F.C.
Abstract. A detailed analysis of twin nucleation and growth is performed for the case of face-centred cubic
2014
materials with low stacking fault energy 03B3. It is found that twin nucleation may occur only if certain conditions
concerning the crystallographic orientation, sign of the applied stress and deformation level, are satisfied. Each
of these conditions is analysed ; their interdependence leads to the conclusion that the occurrence of twinning is
controlled by the nucleation and the growth of extrinsic stacking faults. This analysis concentrates on cases where
the tensile (or compressive) axis is either [100] or [111]. The discussion of the energy of twin nucleation leads to
a quantitative relation between twin size and stacking fault energy 03B3. These assumptions are in good agreement
with experimental data on many face-centred cubic solutions.
Thus, we have computed the energy required to We note that the two partials aD and Ba glide in
nucleate a twin, which varies with the nature of the the same direction. The tensile stress a makes the
stacking faults. This computation indicates that the diameter of the dislocation loop BD increase with
nucleation and then the growth of twins is favoured stress.
or impeded by the nature of the faults which are formed The leading partial is aD, because faD 2fB., and
=
with increasing strain. behind is formed a ribbon of intrinsic fault, but the
Finally, we have compared the conclusions of this stacking fault is removed by the partial Ba.
analysis with experimental data, especially our data b) Reaction junction in a glide plane.
for Cu-Al alloys. For example, such a reaction may occur between
BD (a) and CD (a) dislocation loops dissociated in
2. Formation and growth of an extended stacking faults
the glide plane (a) :
Any perfect dislocation with Burgers vector b may be
dissociated into two partials, for example two Shockley
partials b1 and b2. The applied stress a generally
exerts on the partials two different forces which deter-
mine the sense of displacement of each dislocation and The two underlined leading partials are attractive
consequently the nature of the stacking fault ribbon. because they have the same Burgers vector and oppo-
Moreover, for low enough values of S.F.E. y, the site sign (Fig. 2b). After their annihilation, the intrinsic
width of this ribbon may increase enough to reach fault surface is delimited by the partial dislocations
values giving an extended fault bounded by indepen- Bat and Ca which are repulsive, but the applied stress
dent partial dislocations. The density of independent a exerts opposite forces on them. Hence, a reaction
partial dislocations and therefore the density of extend- is possible, either for a sufficient value of a, or with
ed faults increases with the strain. This facilitates thermal activation (we note that the energy required
different mechanisms of twin nucleation. We have to temporarily form the perfect dislocation BC(a) by
examined the possible configurations for tensile and recombination is the same as the energy for cross-
compressive stresses applied along 1 1 1 > and 100 ), slip) :
which are two stable crystallographic directions.
tensile stress in the ( 111 ) direction, referring to the Thomp- sociated in a type (a) plane. An extrinsic fault takes place
son tetrahedron. by dissociation of the junction dislocation BC.
1481
dislocation Ba but attractive for the partial RC, reacts (b) slip planes with a tensile stress in the 111 > direction.
with the latter and gives the partial dislocation aC.
Hence, we find again the previous configuration
with two repulsive Shockley dislocations on both sides
of an intrinsic fault By recombination, they may
reverse their mutual positions (Fig. 3d) and give rise
to an extrinsic fault which extends with increasing a :
and such destructions are more likely to occur. Finally 2. With ( 100 ) direction these conclusions are
it appears that a tensile stress applied in the ( 111 ) reversed
direction gives rise to intrinsic faults in the initial stage
of deformation. But as soon as these faults grow, all 3. Computation of the energy for twin nucleation
the interactions between them nucleate extrinsic faults The following computation points out the influence
which extend easily with increasing tensile stress. of the nature of stacking faults on twinning nucleation.
2.1.2 Compressive stress. -
the case of compression tests. in consequence localized only on the surface of this
Consequently, a compression test in the ( 111 ) cylinder.
direction gives rise to extrinsic faults in the first stage
3.1 STORED ENERGY ON THE TWIN FRONT. - We
of deformation, and reactions between these faults
consider stacking faults of the same nature (intrinsic
nucleate intrinsic faults which extend with increasing
or extrinsic) on contiguous planes of type (a) sur-
applied stress. rounded by partial dislocations (B0153, Ca or Da) piled-
2.2 APPLIED STRESS IN THE ( 100 > DIRECTION. -
up in a regular array. Three typical cases are possible :
As for the ( 111 ) direction whe have made a detailed 1. Intrinsic faults bounded by identical sets of three
analysis which is summarized here. The detailed reac- different partial dislocations.
tions and figures are given in appendix 1. This structure (Fig. 5a) is typical in recrystallised
materials. The stored energy is low because each
2 . 2 .1 Tensile stress.
triplet gives equivalence with the perfect crystal :
1. Dissociated dislocations gliding freely in their
planes : the two Schockley partials move in the same
direction with a narrow ribbon of extrinsic fault 2. Intrinsic faults bounded by identical partial dis-
between them. locations.
2. Junction reaction in a glide plane : this results This type of twin front (Fig. 5b) is promoted when
in the nucleation of an intrinsic fault which grows one slip system is activated by the applied stress. The
with increasing stress. interactions between piled-up dislocations are at a
3. Reaction on the intersection of two glide planes : maximum, and the stored energy is proportional to
we have shown that if only one dislocation is not b2.
dissociated, or has been recombined, this results i4 3. Intrinsic faults bounded by alternate partial dis-
the nucleation of an intrinsic fault locations. This last structure is possible with two slip
systems being activated The equivalent crystallo-
2.2.2 Compressive stress. -For the same reasons graphic configuration is given by extrinsic faults
as given previously, the above conclusions are reversed, piled-up at a distance of two planes, since we have
i.e. compressive stress develops extrinsic faults.
(Fig. 5c) :
2.3 CoNCLUSION. -
in the next stages of the deformation, the reac- piled-up on contiguous planes, and the stored energy
tion either between coplanar dislocations, or on the is proportional to b2/4. Consequently, the stored
intersection of glide planes, gives rise to new faults; energy on the front of two identical twins is propor-
for the most part, the nature of these is : tional to :
+ extrinsic for a tensile test, b2 with intrinsic faults piled-up on contiguous
+ intrinsic for a compressive test; planes,
1483
write :
Fig. 5.-
which requires the least energy. The following computation may be applied both for
the cases of a compressive or a tensile stress in the
3.2 TOTAL ENERGY FOR TWIN NUCLEATION. The
-
( 111 ) direction.
final energy for the nucleation of a twin depends also Let us consider a twin on n contiguous planes. If
on the nature of the piled-up stacking faults. We shall it is composed of ni intrinsic faults bounded by, for
successively examine the cases for the 111 > and example, the same partials aD, we have ni n and =
100 ) directions. the formation of this twin under the applied stress a
At first we determine the critical stress for a twin induces a variation of length hi of the crystal, where
nucleus with extrinsic or intrinsic faults.
(Fig. 1) :
3 . 2 .1 Critical stress on the twin front. The critical
-
in length he and energy We are : It appears that for the four cases considered (tension
and compression in the 111 ) and ( 100 ) directions)
twins are preferentially formed with extrinsic faults :
-
Table I. -
ne =
n/2 extrinsic faults, with the same change in
length h (for both tensile and compressive stresses).
But the energetic density on the twin front is four times
as low with extrinsic faults. Consequently, for plastic
strain in the 100 > direction, the expended energy
promotes twinning with extrinsic faults. For a different
reason this conclusion is the same as that with the
stress in the 111 > direction.
The variation of sample in length, induced by the A moreaccurate computation (see appendix 3) based
growth of this loop is the same as that induced by n on previous results (de Wit [9]) leads to a relation
identical loops, coaxially piled-up, bounding a stack- which is nearly the same as that obtained with the
ing faults, with Sn S1/n and r.
of this twin
= =
r,l.,,In-.
The total above approximation :
energy En of
nucleus, composed these n
faults, is the energy of the two faces (with a surface
density y/2) and of the front :
twin nucleation. -
With aEn/an =
0, we find :
Fig. 7. -
Energy En of a twin nucleus vs. the number n number n of extrinsic stacking faults and stacking fault
of piled-up stacking faults. energy y.
1486
4.Comparison with experimental results. Tensile and compressive tests in various conditions,
with different materials, give satisfactory confirmation
Among the published results concerning the plastic
of our above predictions (on Ag : Miura, Takamura
deformation of F.C.C. metals and solid solutions, a and Narita, [12] ; Narita and Takamura, [13] ; Ramas-
brief review of those concerning the monocrystalline
materials with low stacking fault energy has been
wami, Kocks and Chalmers, [14]. On Au : Nakada,
Kocks and Chalmers, [15]. On Cu : Takeuchi, [16].
made by Vergnol (1980). These results as well as our On Cu Si : Nakayama, Ito and Mabuchi, [17]. On
set of data about Cu, Cu-Al and Cu-Si solid solutions Cu Ge : Mori, Fujita and Takemori, [18]).
are in good agreement with the main points of the
above theoretical conclusions. This agreement bears 4.2 THE R6LE OF JUNCTION DISLOCATIONS AND EXTRIN-
upon three main points which are : i) the relation SIC FAULTS IN TWINNING. - Our set of results, as well
between the orientation of the crystal and the occur- as others quoted above, show that whatever the
rence of twinning, ii) the role of junction dislocations
crystal orientation and the sign of the stress are when
and iii) the relation between the S.F.E. y and the
twinning occurs, it always takes place after a severe
thickness of twins within a strained material.
strain, and never before the end of stage II, i.e. never
before the formation and extensive dissociation of the
4.1 THE RELATION BETWEEN THE ORIENTATION OF THE
CRYSTAL, THE SIGN OF THE STRESS AND THE OCCURRENCE
junction dislocations. Indeed, a high density of
broadened extrinsic faults is revealed by transmission
OF TWINNING. Our tensile tests on Cu-Al over the
-
twinning always occurs on the 111 > direction, nucleation and before their extension (i.e. during
in a temperature range which depends on concentra- stage f in figure 2) as on micrograph of figure 8.
tion, In the same way, the importance of the junction
-
twinning never occurs on the 100 > direction. dislocations in relation with the microtwinning for
Fig. 8. Nucleation of an extrinsic stacking fault after reaction between two dissociated dislocations. This extrinsic fault
-
is bounded by two intrinsic faults in the same slip plane. This configuration agrees exactly with the stage f of figure 2.
1487
Cu-Si solid solutions has been cleady shown by are dissociated at the first steps of deformation lead
Coujou, [19]. All these results tend to corroborate to the nucleation and the growth of extended stacking
the prominent part of junction dislocations in the faults ; most of them are :
nucleation of twins. -
the extension of the twin front as a whole, favourable for twinning occurrence,
without any variation of thickness. This was fre- -
the increase of the mean thickness e of the the thickness of twins increases as (yIG)215.
twins with the S.F.E. y of the material. These mean
values of e are quoted in table II, with corresponding The predictions which arise from this twin growth
values of y/G. model are in good agreement with our experimental
The proportionality between e and (yIG)0.42 is data on Cu-Al, over the whole range of solid solution,
as well as with other results on various face-centred
not exactly verified, but various phenomena may
cubic crystals.
explain the discrepancy (Vergnol, [6]). Further progress in this field implies :
Many other experimental results, more qualitative,
may be explained with our model; for instance the
-
hypothesis concerning the nucleation mechanism. confirm the influence of junction dislocations and of
extrinsic stacking faults in twinning mechanism.
5. Summary and conclusions.
analysed the three stages resulting in the formation four planes of the Thompson tetrahedron are identi-
of a twin. cally stressed, and the four edges are the Burgers
At first, for the development of one large stacking vectors of the perfect glissile dislocations. We examine
fault we have established that, in the particular case successively tensile and compressive stresses, as for
of crystals strained in the 111 ) and 100 > direc- the 111 > direction.
tions, the reactions between the dislocations which
1. Tensile applied stress.
A) Dissociated dislocation gliding freely (Fig. 9a)
Table II.-
For the same reason as for the 111 > direction, the
resulting forces fAy and fYB per unit length on partial
dislocations are such that ::
partial
dislocations,
-
stages : a tensile stress in the ( 100 > direction : a) in the same slip
plane (c); b) on the intersection of type (b) and type (c)
slip planes.
may react as summarized in figure 9b. These dislo- dant thicknesses hiand h,, and the energies Wi and
,
cations are dissociated as follows : We respectively expended for the formation of these
twins with the same applied stress a in the ( 100 >
direction (Fig. 10) we have the following relations :
Appendix 2.
With the previous notations, a twin on n contiguous Fig. 10. Thompson tetrahedron and applied stress along
-
Appendix 3.
The purpose of this computation is to provide an analytical expression for the total energy of a set of n identical
dislocation loops, circular, glissile and coaxial, with a radius r,,
For two identical circular loops with the Burgers vector b, lying in two parallel planes, the mutual energy
H2 has been determined by de Wit [9] :
where K and E are the elliptic integrals of first and second kind respectively and with (Fig. 1) :
For n identical loops separated by a height h and building up a cylinder of height L, the energy H. is given by :
with
Now, we suppose that R > L > h. These restrictive conditions are in good agreement with many TEM obser-
vations.
Thus one can write :
Fig. 11. -
Therefore, H2 is reduced to :
The computation of the function F(n, r1) in the § 3. 3 .1 is achieved if we observe that R =
rn = rl n-1/2. Finally,
we find :
We have computed this relation for different values of the SFEy, and with rl lo’ A. This value corresponds
=
to one dislocation loop with a surface equal to the cross-section of our tensile specimen by a { 111 } slip plane.
Then the optimal value N is an increasing function of y, and the relation between N and y deduced from the
previous expression is given by equation (3) in section 3.3.2.
References
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