SEMICONDUCTOR KF5N50P/F/PZ/FZ

N CHANNEL MOS FIELD

TECHNICAL DATA EFFECT TRANSISTOR

General Description KF5N50P, KF5N50PZ

A
This planar stripe MOSFET has better characteristics, such as fast O
C
switching time, low on resistance, low gate charge and excellent
F
avalanche characteristics. It is mainly suitable for electronic ballast and
E G DIM MILLIMETERS
switching mode power supplies. A _ 0.2
9.9 +
B B 15.95 MAX
Q C 1.3+0.1/-0.05
_ 0.1
FEATURES I D
E
0.8 +
_ 0.2
3.6 +
・VDSS= 500V, ID= 5.0A K
F _ 0.1
2.8 +
P G 3.7
・Drain-Source ON Resistance : RDS(ON)=1.4Ω @VGS = 10V M H 0.5+0.1/-0.05
L
I 1.5
・Qg(typ) = 12nC J J 13.08 +_ 0.3
D K 1.46
L _ 0.1
1.4 +
N N H
M 1.27+_ 0.1
N 2.54 +_ 0.2
MAXIMUM RATING (Tc=25℃) O _ 0.2
4.5 +
P _ 0.2
2.4 +
RATING Q _ 0.2
9.2 +
CHARACTERISTIC SYMBOL KF5N50P KF5N50F UNIT 1 2 3 1. GATE
2. DRAIN
KF5N50PZ KF5N50FZ 3. SOURCE

Drain-Source Voltage VDSS 500 V

Gate-Source Voltage VGSS ±30 V TO-220AB
@TC=25℃ 5.0 5.0*
ID
Drain Current @TC=100℃ 2.9 2.9* A
KF5N50F, KF5N50FZ
Pulsed (Note1) IDP 13 13*
A C
Single Pulsed Avalanche Energy EAS 270 mJ
(Note 2) S
F

P
Repetitive Avalanche Energy EAR E DIM MILLIMETERS
8.6 mJ
(Note 1) A _ 0.3
10.0 +
B

B _ 0.3
G

Peak Diode Recovery dv/dt 15.0 +

dv/dt 4.5 V/ns C _ 0.3
2.70 +
(Note 3)
D 0.76+0.09/-0.05
Drain Power Tc=25℃ 83 41.5 W E Φ3.2 + _ 0.2
PD L L F _ 0.3
3.0 +
Dissipation
K

R
Derate above 25℃ 0.66 0.33 W/℃ G _ 0.3
12.0 +
M H 0.5+0.1/-0.05
Maximum Junction Temperature Tj 150 ℃
J

D D J _ 0.5
13.6 +
K _ 0.2
3.7 +
Storage Temperature Range Tstg -55～150 ℃
L 1.2+0.25/-0.1
Thermal Characteristics N N
M 1.5+0.25/-0.1
H N _ 0.1
2.54 +
Thermal Resistance, Junction-to-Case RthJC 1.5 3.0 ℃/W P _ 0.1
6.8 +
Q _ 0.2
4.5 +
Thermal Resistance, Junction-to- R _ 0.2
2.6 +
RthJA 62.5 62.5 ℃/W
Ambient 0.5 Typ
Q

1 2 3 S
1. GATE
* : Drain current limited by maximum junction temperature. 2. DRAIN
3. SOURCE

PIN CONNECTION
TO-220IS
(KF5N50P, KF5N50F) (KF5N50PZ, KF5N50FZ)
D D

G
G

S S

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ELECTRICAL CHARACTERISTICS (Tc=25℃)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250㎂ , VGS=0V 500 - - V
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250㎂, Referenced to 25℃ - 0.55 - V/℃
Drain Cut-off Current IDSS VDS=500V, VGS=0V, - - 10 ㎂
Gate Threshold Voltage Vth VDS=VGS, ID=250㎂ 2.0 - 4.0 V
KF5N50P/F VGS=±30V, VDS=0V - - ±100 nA
Gate Leakage Current IGSS
KF5N50PZ/FZ VGS=±25V, VDS=0V - - ±10 ㎂
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=2.5A - 1.15 1.4 Ω
Dynamic
Total Gate Charge Qg - 12 -
VDS=400V, ID=5A
Gate-Source Charge Qgs - 2.4 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 5.4 -
Turn-on Delay time td(on) - 22.5 -
VDD=250V
Turn-on Rise time tr - 29 -
RL=50Ω ns
Turn-off Delay time td(off) - 58 -
RG=25Ω (Note4,5)
Turn-off Fall time tf - 18 -
Input Capacitance Ciss - 430 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 71 - pF
Reverse Transfer Capacitance Crss - 7.5 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 5
VGS<Vth A
Pulsed Source Current ISP - - 20
Diode Forward Voltage VSD IS=5A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=5A, VGS=0V, - 150 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/㎲ - 0.42 - μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=19.5mH, IS=5A, VDD=50V, RG=25Ω, Starting Tj=25℃.
Note 3) IS≤5A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width ≤300㎲, Duty Cycle≤2%.
Note 5) Essentially independent of operating temperature.

Marking

1 1
1 1
KF5N50 KF5N50
KF5N50 KF5N50
F 813 2 FZ 813 2
P 801 2 PZ 801 2

1 PRODUCT NAME

2 LOT NO

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Fig1. ID - VDS Fig2. ID - VGS

100
VDS=30V
Drain Current ID (A)

Drain Current ID (A)

1
VGS=10V 10
10
VGS=7V
TC=100 C
25 C
0
10
1 VGS=5V

-1
0.1 10
0.1 1 10 100 2 4 6 8 10

Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)

Fig3. BVDSS - Tj Fig4. RDS(ON) - ID

Normalized Breakdown Voltage BVDSS

1.2 3.0
VGS = 0V
On - Resistance RDS(ON) (Ω)

IDS = 250
2.5
1.1 VGS=6V
2.0

1.0 1.5
VGS=10V
1.0
0.9
0.5

0.8 0
-100 -50 0 50 100 150 0 2 4 6 8 10 12

Junction Temperature Tj ( C ) Drain Current ID (A)

Fig5. IS - VSD Fig6. RDS(ON) - Tj

10
2 3.0
VGS =10V
Reverse Drain Current IS (A)

IDS = 2.5A
2.5
Normalized On Resistance

10
1 2.0

TC=100 C 1.5
25 C
10
0 1.0

0.5

-1 0.0
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -100 -50 0 50 100 150

Source - Drain Voltage VSD (V) Junction Temperature Tj ( C)

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Fig 7. C - VDS Fig8. Qg- VGS

1000 12
ID=5A

Gate - Source Voltage VGS (V)

Ciss 10
Capacitance (pF)

100 8
VDS = 400V

Coss VDS = 250V

6
VDS = 100V
10 4

Crss 2

1 0
0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 14 16

Gate - Charge Qg (nC)

Drain - Source Voltage VDS (V)

Fig9. Safe Operation Area Fig10. Safe Operation Area

(KF5N50P, KF5N50PZ) (KF5N50F, KF5N50FZ)
102 Operation in this 102 Operation in this
area is limited by RDS(ON) area is limited by RDS(ON)
Drain Current ID (A)
Drain Current ID (A)

101 101
100µs
100µs
1ms
100 10ms 100 1ms

100ms 10ms
100ms
DC
10-1 10-1 DC
Tc= 25 C Tc= 25 C
Tj = 150 C Tj = 150 C
2 Single pulse 2 Single pulse
10 10
100 101 102 103 100 101 102 103
Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V)

Fig11. ID - Tj

5
Drain Current ID (A)

0
0 25 50 75 100 125 150

Junction Temperature Tj ( C)

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Fig12. Transient Thermal Response Curve

(KF5N50P. KF5N50PZ)

100
Duty=0.5
Transient Thermal Resistance

0.2

10-1 0.1
PDM
t1
0.05 t2
0.02 e
Puls - Duty Factor, D= t1/t2
1 gle
0.0 Sin
Tj(max) - Tc
10-2 - RthJC =
PD

10-5 10-4 10-3 10-2 10-1 100 101

TIME (sec)

Fig13. Transient Thermal Response Curve

(KF5N50F. KF5N50FZ)

Duty=0.5
Transient Thermal Resistance

100
0.2

0.1

0.05

PDM
10-1 0.02
t1

0.01 t2
e
P uls
gle - Duty Factor, D= t1/t2
Sin
Tj(max) - Tc
- RthJC =
PD
10-2
10-5 10-4 10-3 10-2 10-1 100 101

TIME (sec)

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Fig14. Gate Charge

VGS

10 V
Fast
Recovery
ID Diode

0.8 VDSS
ID
1.0 mA
Q
VDS Qgs Qgd
Qg
VGS

Fig15. Single Pulsed Avalanche Energy

1 BVDSS
EAS= LIAS2
2 BVDSS - VDD

BVDSS
L
IAS
50V

25Ω
VDS ID(t)

VGS VDD VDS(t)

10 V

Time
tp
Fig16. Resistive Load Switching

VDS
90%

RL

0.5 VDSS
VGS 10%
td(off)
25 Ω td(on) tr
VDS tf

ton toff
VGS
10V

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Fig17. Source - Drain Diode Reverse Recovery and dv /dt

DUT Body Diode Forword Current

VDS
ISD
IF (DUT) di/dt

IRM

IS
Body Diode Reverse Current

0.5 VDSS
VDS Body Diode Recovery dv/dt
(DUT)
driver VSD
VDD

10V VGS
Body Diode Forword Voltage drop

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