MOSFET’S – Internal Capacitance,

Frequency Response

Dr. Rajeshkumar V
Assistant Professor (Sr.),
Dept. of Communication Engg.,
School of Electronics Engg.,
VIT University Vellore 632014, India

Email: rajeshkumar.v@vit.ac.in
 Module 3. MOSFET
• IN THIS CHAPTER YOU WILL LEARN
– How coupling and bypass capacitors cause the gain of
discrete circuit amplifiers to fall off at low frequencies,
and how to obtain an estimate of the frequency fL .

– The internal capacitive effects present in the MOSFET and

how to model these effects by adding capacitances to the
hybrid-pi model of each of the two transistor types.

– The high-frequency limitation on the gain of the CS

amplifier and how the gain fall off and the upper 3-dB
frequency fH are mostly determined by the small
capacitances between the drain and gate.

Dr.V.Rajeshkumar, SENSE
 Internal Capacitive Effects and the High-Frequency Model of
the MOSFET

• MOSFET has internal capacitance (this is apparent).

– The gate capacitive effect: The gate electrode forms a
parallel plate capacitor with the channel.
– The source-body and drain-body depletion layer
capacitances: These are the capacitances of the
reverse-biased pn-junctions.

• Previously, it was assumed that charges are acquired

instantaneously - resulting in steady-state model.
– This assumption poses problem for frequency
analysis.
Dr.V.Rajeshkumar, SENSE
Dr.V.Rajeshkumar, SENSE
The Gate Capacitive Effect
1
(9.20) triode region: C gs  C gd  WLC ox
2
 2
 gs
C  WLC ox
(9.21/22) saturation region:  3
 C gd  0

Cgs  C gd  0
(9.23/24) cutoff region: 
 C gb  WLC ox
(9.25) overlap capacitance: C ov  WLov C ox

Dr.V.Rajeshkumar, SENSE
 The Junction Capacitances
C sb 0
(9.26) source-body capacitance: C sb 
VSB
1
V0
Cdb0
(9.27) drain-body capacitance: Cdb 
VDB
1
V0
Where, Csb0  Value of Csb at zero body-source bias.
VSB  is the magnitude of reverse bias voltage.
V0  is the junction built-in voltage (0.6V -0.8V)
Also, Cdb0  Value of Cdb at zero body-drain bias.
VDB  is the magnitude of reverse bias voltage.
V0  is the junction built-in voltage (0.6V -0.8V)
Dr.V.Rajeshkumar, SENSE
Figure High-frequency, equivalent-circuit model for the MOSFET. (b) The equivalent
circuit for the case in which the source is connected to the substrate (body).
(continued)
Dr.V.Rajeshkumar, SENSE
Figure : (continued) (c) The equivalent-circuit model of (b) with Cdb neglected (to
simplify analysis).
Dr.V.Rajeshkumar, SENSE
The unity-gain frequency (fT)

Dr.V.Rajeshkumar, SENSE
The unity-gain frequency (fT)

Dr.V.Rajeshkumar, SENSE
Dr.V.Rajeshkumar, SENSE
The MOSFET Unity-Gain Frequency
(fT)
(9.28) output current: Io  gmVgs
(9.29) gate-source voltage: Vgs  Ii / s  Cgs  Cgd 
Io gm
(9.30) current-gain: 
Ii s  Cgs  Cgd 
gm
(9.31) unity-gain frequency: fT 
2  Cgs  Cgd 

Dr.V.Rajeshkumar, SENSE
Dr.V.Rajeshkumar, SENSE
 General Frequency Response

Figure : Sketch of the magnitude of the gain of a discrete-circuit BJT or MOS amplifier versus
frequency. The graph delineates the three frequency bands relevant to frequency-response
determination.
Dr.V.Rajeshkumar, SENSE