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Design and Modeling of DC/ DC Boost Converter for Mobile Device Applications
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Krit Salah-ddine
University Ibn Zohr - Agadir
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ABSTRACT
This paper presents the design and modeling of DC/DC boost (step-up) converter for Advanced Intelligent Systems using
Matlab/Simulink. The steady-state and average-value models for the proposed converter are developed and simulated. This
work offers modeling and simulation techniques to analyze and design for an overall efficiency optimization of standard
synchronous and asynchronous boost converter topologies including variable switching frequency and load resistance . Loss
equations are developed, modeled, and simulated along with common power electronic components using Matlab/Simulink.
Keywords: Switching converters; Matlab/Simulink; system modeling Efficiency; Boost converters; loss Modeling.
(2)
(3)
And, using for and using and Without going through the detailed explanation as before,
the equations for the inductor current increase and
the steady-state equation for is: decrease are given below.
[ ( ) ] (11)
(12)
√
Fig. 5. Discontinuous Mode Boost Power Stage Waveforms (13)
Where K is defined as:
Listings of DC/DC converter losses may be found in [5] During the transition of voltage rising or falling between
and [6][10]. Boost converter losses considered in this the maximum and minimum steady-state value across
work are given in Table 1, as itemized and developed either switch, and similarly the rise or fall transition of
analytically in the following subsections. current through the same switch, losses occur. Much work
has been performed in an effort to correctly model this
Table 1. Boost Converter Losses Considered behavior [5][9], without a highly accurate model still as
yet developed [9]. A combination of the work of [8] and
Synchronous Asynchronous [9] are presented here to develop the switch model
M1:NMOS conductions M1:NMOS conductions beginning with eqn.(15), NMOS switching loss is
associated with both converters.
M1:NMOS Switching M1:NMOS Switching
M1:NMOS Gate Drive M1:NMOS Gate Drive ( ) (15)
M1:NMOS Body diode Diode conduction
where M1SL=MOSFET switching loss power (Watt),
M2:NMOS conductions Diode leakage
=current through MOSFET (Amp), =drain to
Diode junction source voltage across MOSFET (Volt), fs=switching
M2:NMOS Switching
Capacitance frequency (Hertz), ts(off)=MOSFET switching time
M2:NMOS Gate Drive transitioning off (second), ts(on)=MOSFET switching
time transitioning on (second) [8],[9]
M2:NMOS Body diode
Dead Time All parameters of eqn.(15) are readily measurable in a
physical circuit except the switching time terms and
3.1 NMOS Source Switch Conduction Loss which are developed in [10].
( ) (16)
( )
where =load switch drain to source voltage(Volt) 3.11 Diode Reverse Bias Loss
3.6 NMOS Load Switch Switching Loss During the portion of the period d, the diode has a reverse
bias across it. There is a certain amount of leakage current
The load switch MOSFET switching loss is calculated under this condition that is listed by the manufacturer on
with the same model as the source switch shown in (16). the data sheet. This value is used to calculate diode
NMOS switching loss is associated with only the reverse bias leakage loss in eqn. (23). Diode reverse bias
synchronous converter. loss is associated with only the asynchronous converter.
(23)
3.7 NMOS Load Switch Gate Drive Loss
Where VD=voltage across diode (Volt)
NMOS gate drive loss is accounted for by simply
doubling the gate drive loss equation (17) for the 3.12 Diode Junction Capacitance Loss
synchronous case. NMOS gate drive loss is associated
with only the synchronous converter. Diodes have a certain capacitance associated with
changing voltages across them [8]. The charging and
3.8 NMOS Load Switch Body Diode Loss discharging of this capacitance creates a power loss as
modeled by equation (24). Diode junction capacitance
The load switch body diode loss occurs only in the load loss is associated with only the asynchronous converter.
switch due to the reverse bias during the d portion of the
period [6]. The reverse-bias voltage and leakage current (24)
dissipate power according to the equation shown in eqn.
(20). NMOS body diode loss is associated with only the Where C=capacitance (Farad)
synchronous converter.
4. PERFORMANCE SIMULATION OF
(20)
SYNCHRONOUS AND
where ileakage=reverse bias leakage current (Amp), ASYNCHRONOUS DC/DC BOOST
=load switch drain to source voltage (Volt). CONVERTER
The boost converter asynchronous and synchronous
3.9 Synchronous Switching Dead-Time Loss circuits shown in Fig.1 & Fig.2 and using references
[10][11][12] are modeled in Matlab/Simulink as shown in
Dead-time loss occurs through the load switch when
Fig.6 & Fig.7. The analytic loss equations developed in
neither transistor is on as the load switch is in forward
Section 3 are modeled as shown in Fig.8 (redundant
conduction [8]. A period of dead-time must exist to
models are not shown). Fig.9 shows the simulator loss
prevent current “shoot-through” whereby current flows
summation and efficiency calculation for the synchronous
through both switches simultaneously to the load. The
case.
value of tdead is assumed to be 60ns as is typical for
DC/DC converter controllers [6]. The dead-time loss
representation is shown in eqn.(21). Synchronous
switching dead-time loss is associated with only the
synchronous converter.
(21)
(22)
Fig. 6. Asynchronous Boost Converter Simulation
Where ID=current through diode (Amp), Vf=diode
forward voltage (Vol)
5. SIMULATION RESULTS
The simulation model of Asynchronous and Synchronous
DC/DC boost converter are build using above-mentioned
steps is shown in Figures section 4. The DC/DC boost
converter is previously designed and simulated using
Matlab/Simulink package.
The supply voltage ranges from 2.6V to 4.2V .The Fig. 10. Output Current under various Time and at different
experimental results show the different of boost converter boost converter (Synchronous and asynchronous)
Synchronous and asynchronous. Fig.10 and Fig.11 show
IJST © 2013 – IJST Publications UK. All rights reserved. 399
International Journal of Science and Technology (IJST) – Volume 2 No. 5, May, 2013
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Fig. 11. Output Voltage under various Time and at different
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(Fs=30MHs and Fs=50MHs ) Semiconductor Publication,2006
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John Shen, “New Physical Insights on Power
Matlab/Simulink provides an effective environment for MOSFET Switching Losses”, IEEE Transactions on
modeling and simulation of DC/DC converters. The boost Power Electronics, Vol. 24, No. 2, February 2009.
converter is herein for optimized for efficiency
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DC/DC Buck Converter for Stand Alone Photovoltaic Automatic control ,modeling and simulation