BATAAN PENINSULA STATE UNIVERSITY

COLLEGE OF ENGINEERING AND ARCHITECTURE Telefax: (6347) 2379214

(6347) 2379214
OFFICE OF THE DEAN Website: www.bpsu.edu.ph
Capitol Drive, Capitol Compound
City of Balanga 2100 Bataan
PHILIPPINES

DUAL GATE MOSFET RF AMPLIFIER

Performance Objectives Since the gate protection diodes are physically small, the
A. Measure the DC operating voltages of a dual gate
capacitance they contribute to the circuit is also small. This
MOSFET RF amplifier.
is important if the transistor is to retain good high
B. Demonsrate the operation of dual gate MOSFET frequency performance. The gate protection diodes also
RF AMPLIFIER.
lower the extremely high dc input resistance that is peculiar
C. Demonsrate the operation of dual gate MOSFET
to MOSFETS. However, this is not usually a factor in most
mixer.
practical circuit since the input resistance is still very high.
Basic Concepts Fig 26-1 also shows the schematic symbol for the
1. Dual gate MOSFETS have two separate insulated
transistor. This symbol is often simplified in schematic
gate electrode.
drawings and the protection diodes are not shown. When in
2. Both gates can control drain current
doubt, you should look up the transistor number to
3. The second gate can provide electrical isolation
determine if gate protection diodes are used.
between the drain and the first gate.
4. Some dual gate MOSFETS have internal gate
protection diodes which prevent gate insulation
breakdown due to static electrical charge.
5. Gate protection diodes reduce the gate input
impedance
6. The independent pair of gates make the dual gate
MOSFET very useful in gain controlled stages and
mixers.
Introductory Information
When transistors are used at high radio frequencies there is
Another important type of MOSFET is the dual gate type.
a tendency for the amplifier to act as an oscillator. The
Fig26.1 shows the cross section details of a dual gate
interelectrode capacitance of the device serves as a
MOSFET with gate protection diodes. The N channel
feedback path. If the feedback is in phase and if the gain is
passes under two metal gate electrodes. Either of the two high, oscillations will result. These oscillations are usually
gates can control the drain current since the channel is
undesirable and must be eliminated.
continuous from source to drain. A layer of silicon dioxide
gives the gate good insulation from the channel and The normal approach to preventing self-oscillation in an
therefore the device exhibits very high input impedance.
RF amplifier is neutralization. It involves establishing an
Two extra N diffusions form the cathode for the gate
external feedback path that is 180 degrees out of phase with
protection diode. Tiny P diffusions make up the anodes of
the internal feedback path. If the two paths are equal but of
the gate protection diodes. If the voltage at either gate
the opposite phase, they will cancel. This makes the
exceeds about ten volts, the diodes will conduct and
amplifier stable.
prevent the silicon dioxide gate insulator from being
The dual gate MOSFET has the distinct advantage of not
punctured. Since the diodes are essentially connected requiring neutralization. The reason for this is the shielding
cathode-cathode, the gates are protected from excess
effect offered by the second gate. If the second gate is
voltage of either polarity.
operated at RF ground, it will prevent the signals from

VISION MISSION

A leading university in the Philippines recognized for its proactive contribution
to Sustainable Development through equitable and inclusive programs and
services by 2030
To develop competitive graduates and empowered community
members by providing relevant, innovative and transformative
knowledge, research, extension and production programs and
services through progressive enhancement of its human
resource capabilities and instructional mechanisms
 BATAAN PENINSULA STATE UNIVERSITY
COLLEGE OF ENGINEERING AND ARCHITECTURE Telefax: (6347) 2379214
(6347) 2379214
OFFICE OF THE DEAN Website: www.bpsu.edu.ph
Capitol Drive, Capitol Compound
City of Balanga 2100 Bataan
PHILIPPINES

reaching input, gate number one. This makes dual gate Exercise Procedure
MOSFETS very desirable for RF amplifier service.
Objective A. Measure the dc operating voltages of a
Another distinct advantage of the dual gate MOSFETs is its dual gate MOSFET RF amplifier.
ability to give different gains for different gate number two
voltages. The signal to be amplified is normally fed into 1. a) Connect the circuit shown in figure 26-2
gate number one. A control voltage could be fed into gate b) Adjust the drain voltage Vdd to 15 Vdc.
number two. As the control voltage changes, the transistor c) Adjust R2 so that gate G2 is at ground potential
gain changes. This makes the dual gate MOSFETs ideal for (junction of R1 and R2 grounded)
service in systems automatic gain control. d) Measure and record the drain, source gate G1
and G2 voltages with respect to ground with the
It is necessary in some electronic system to mix diff. electronic VOM.
signals together. This mixing can be called as
heterodyning, modulation, demodulation or detection vdd=15vdc
+
R6
depending upon the system. A dual gate MOSFET makes 1kΩ
C4
an excellent mixing device. One signal is applied to gate C1 R1 OUTPUT

one and the other at gate two. There are good isolation 10µF 47kΩ
Q1
100µF
G2 D
between the gates, thus with the two signals. The drain AF INPUT 2N6764
circuit will contain the results of both signals. It is obvious 0.01µF G1 S
R5
that the second gate makes the device quite useful for many RF INPUT
C2
R2 R4 R3 C3 10kΩ
100kΩ 150Ω 25µF
radio frequency applications. 10kΩ
-

Equipment and Materials

VD = ..................... Vdc
Power Source .15 Vdc, 20mA
Vs = ....................Vdc
AF Generator
VG1 = .................... Vdc
RF Generator
VG2 = ................... . Vdc
Electronic VOM
Oscilloscope
e) Adjust R2 for maximum resistance in
Practical Electronics Trainer
gate G2 bias circuit (wiper arm at ground
C1 10μF Electrolytic
potential).
C2 0.01μF Mylar
f ) Repeat the measurements of (d).
C3 25μF Electrolytic
C4 100μF Polystyrene
VD = ..................... Vdc
Q1 MOSFET, N-channel, Gate protected 40841
Vs = ....................Vdc
R1 47kΩ 1watt
VG1 = .................... Vdc
R2 10kΩ, 1/2 watt, potentiometer, component module
VG2 = ..................... Vdc
R3 100kΩ, 1watt
R4 1kΩ, 1watt
g) Compare the results of (d) and (f). Does
R5 150 Ω, 1watt
increasing gate G2 voltage cause an increase in
R6 10kΩ, 1watt
drain current? ..........................
Konnect-All Board
What indication do you have that drain current

VISION MISSION

A leading university in the Philippines recognized for its proactive contribution
to Sustainable Development through equitable and inclusive programs and
services by 2030
To develop competitive graduates and empowered community
members by providing relevant, innovative and transformative
knowledge, research, extension and production programs and
services through progressive enhancement of its human
resource capabilities and instructional mechanisms
 BATAAN PENINSULA STATE UNIVERSITY
COLLEGE OF ENGINEERING AND ARCHITECTURE Telefax: (6347) 2379214
(6347) 2379214
OFFICE OF THE DEAN Website: www.bpsu.edu.ph
Capitol Drive, Capitol Compound
City of Balanga 2100 Bataan
PHILIPPINES

has increased? ...................................... b) Set the oscilloscope for a vertical deflection of 0.02V/cm
...................................... and connect it to the output of the RF amplifier using the
X10 multiplier probe. With the X10 probe connected the
Objective B. Demonstrate the operation of a vertical deflection is 0.2V/cm.
dual gate MOSFET RF amplifier. c) Adjust R2 for a 400mV peak-to-peak signal on the
oscilloscope.
2. a) Connect the RF Generator to the input d) Connect the high level output of the AF Generator to
of gate G1 of your circuit. the audio input connection of gate G2 in your circuit.
b ) Set the RF Generator for a 100mV peak- e) Adjust the AF Generator for a sine-wave output at a
to-peak unmodulated output at a frequency of frequency of 1kHz.
1MHz. Use the oscilloscope to monitor the input f) Set the oscilloscope sweep speed to 0.5ms/cm.
voltage at gate G1. g) Increase the output voltage of the AF generator while
c) Adjust R2 so that gate G2 is at ground observing the oscilloscope. Is the waveform an amplitude
potential. modulated RF signal? .................
d) Measure and record the output voltage h) Reduce all voltage sources to zero.
of the RF amplifier using the oscilloscope.
eo =....................mV pk-pk Summary
e) Calculate the gain.
Av = eo/ei In this Laboratory Exercise you became familiar with the
................................... operation of the dual gate MOSFET. First, you constructed
.......... Av =................. an RF amplifier and measured the de operating voltages.
You saw that by varying the bias on gate G2 you could
h ) Calculate the new voltage gain. vary the drain current and thereby control the de operating
Av = eo/ei point of the circuit. Next, you applied an RF signal to gate
................................... GI of the circuit. Again, by varying G2 bias you found by
.......... Av =................. measurement and calculation that the gain of the amplifier
varied accordingly. You determined that AGC could
i) Vary R2 through its range of values readily be applied to gate G2 to control amplifier gain.
while noting the change in output voltage on the Finally, you applied an audio frequency signal to gate G2 at
oscilloscope. Does the gain of the amplifier change as G2 the same time that an RF signal was applied to G1 You saw
bias is varied? ......... that with these inputs the dual gate MOSFET operated as a
mixer, producing an amplitude modulated RF output signal.
Would you say that the gain of the amplifier could
be changed by applying automatic gain control
(AGC) voltage to G2? ................ Quiz

Objective C. Demonstrate the operation of a dual gate 1. Which of the following is not true regarding the dual
MOSFET mixer. gate MOSFET?

3. a) Check that the RF input signal to your circuit is a. Requires neutralization at all frequencies.
100mV peak-to-peak using the oscilloscope. b. Makes an excellent mixer with good signal isolation.
c. Can operate in the depletion or enhancement mode.
d. Offers excellent AGC capabilities.

VISION MISSION

A leading university in the Philippines recognized for its proactive contribution
to Sustainable Development through equitable and inclusive programs and
services by 2030
To develop competitive graduates and empowered community
members by providing relevant, innovative and transformative
knowledge, research, extension and production programs and
services through progressive enhancement of its human
resource capabilities and instructional mechanisms
 BATAAN PENINSULA STATE UNIVERSITY
COLLEGE OF ENGINEERING AND ARCHITECTURE Telefax: (6347) 2379214
(6347) 2379214
OFFICE OF THE DEAN Website: www.bpsu.edu.ph
Capitol Drive, Capitol Compound
City of Balanga 2100 Bataan
PHILIPPINES

2. In an N-channel dual gate MOSFET, what BIBLIOGRAPHY

happens to the gain as VG2 is made less
positive. Suggested Student Theory Textbooks
a. The gain increases. in the instructional material in this manual includes, by
b. The gain remains the same. design, an adequate amount of theory, many instructors
c. The gain decreases. will desire to assign textbooks that offer more in-depth
d. None of the above. treatment of the selected topics. The following textbooks
were selected to provide supportive theory, at the proper
3. Which of the following applications would be level, for vocational-technical programs designed to
least likely for a dual gate MOSFET? develop electronics technicians.

a. Audio power amplifier. Grob, Bernard; Basic Electronics, 4th Edition, McGraw-
b. RF mixer. Hill, New York, 1977
c. Gain controlled amplifier.
d. RF amplifier. Lemons, Wayne; Learn Electronics Through
Troubleshooting, 2nd Edition, No. 21452, ITT Educational
4. Why are diodes often integrated into the same Publishing, Indianapolis, 1977
package with the MOSFET?
Mileaf, Harry; Electricity Vol. One-Seven, 2nd Edition,
a. To serve as rectifiers. Hayden, Rochelle Park, New Jersey, 1976
b. To protect the gate insulator from breakdown.
c. To serve as supply voltage regulators. Mileaf, Harry; Electronics Vol. One-Seven, 2nd Edition,
d. To raise the input impedance. Hayden, Rochelle Park, New Jersey, 1978

5. Which one of the following statements is true Shrader, Robert; Electronic Communication, 3rd Edition,
about dual gate MOSFET's? McGraw-Hill, New York, 1975

a. Both gates can control drain current. Instructor References

b. Fixed gate bias is always used.
c. They cannot be used as a single gate MOSFET. ITT Educational Services, Indianapolis
d. There is little isolation between gates. Sloot, William; Solid State Servicing, No. 20888, 1972
McGraw-Hill Book Company, New York
6. What affect do the gate protection diodes Deboo, Gordon and Clifford Burrows; Integrated Circuits
have on the input impedance of a dual gate and Semiconductor Devices, 2nd Edition, 1977
MOSFET? Malvino, Albert; Resistive and Reactive Circuits, 1974
Malvino, Albert; Electronic Principles, 2nd Edition, 1979
a. Impedance is increased. Malvino, Albert; Transistor Circuit Approximations, 3rd
b. Impedance is decreased. Edition, 1980
c. Impedance remains the same. Manera, Anthony; Solid State Electronic Circuits: For
d. None of the above. Engineering Technology, 1973
Millman, Jacob and Taub, Herbert; Pulse, Digital and
Switching Waveforms, 1965

VISION MISSION

A leading university in the Philippines recognized for its proactive contribution
to Sustainable Development through equitable and inclusive programs and
services by 2030
To develop competitive graduates and empowered community
members by providing relevant, innovative and transformative
knowledge, research, extension and production programs and
services through progressive enhancement of its human
resource capabilities and instructional mechanisms
 BATAAN PENINSULA STATE UNIVERSITY
COLLEGE OF ENGINEERING AND ARCHITECTURE Telefax: (6347) 2379214
(6347) 2379214
OFFICE OF THE DEAN Website: www.bpsu.edu.ph
Capitol Drive, Capitol Compound
City of Balanga 2100 Bataan
PHILIPPINES

Temes, Lloyd; Electronic Circuits for Technicians, 2nd

Edition, 1977
Temes, Lloyd; Communication Electronics for
Technicians, 1974

Holt, Rinehart and Winston, New York, New York

De France, J.J.; Communications Electronics Circuits, 2nd

Edition, 1972
Mitchell, Brinton; Semiconductor Pulse Circuits with
Experiments, 1970

John Wiley & Sons, New York

Leach, Donald P.; Basic Electric Circuits, 2nd Edition,

1976
Long, William & Paul Evans; Electronic Principles &
Circuits, 1974
Lurch, E. N.; Fundamentals of Electronics, 2nd Edition,
1971
Romanowitz, H. Alex; Introduction To Electric Circuits,
1971
Romanowitz, H. Alex and Puckett, Russell B.; Introduction
To Electronics, 2nd Edition, 1976

In addition to the student level textbooks listed above,

some reference to Engineering Design Handbooks may
prove to be valuable aids in specialized areas of electronics.
A more detailed analysis of communications circuits and
components can be found in the publications that follow.

Electronic Designers Handbook; Landee, Davis, Olbrecht,

McGraw-Hill, 1957
The Radio Amateur's Handbook; The Headquarters Staff,
American Radio Relay League, 58th Edition, 1981
Reference Data for Radio Engineers; Howard Sams, 6th
Edition, 1975
liendbook. Landee, Davis, Olbrecht, McGraw Hill, 1957

VISION MISSION

A leading university in the Philippines recognized for its proactive contribution
to Sustainable Development through equitable and inclusive programs and
services by 2030
To develop competitive graduates and empowered community
members by providing relevant, innovative and transformative
knowledge, research, extension and production programs and
services through progressive enhancement of its human
resource capabilities and instructional mechanisms