Order this document

SEMICONDUCTOR TECHNICAL DATA by BC489/D

  

NPN Silicon


COLLECTOR
1

2
BASE

3
EMITTER
MAXIMUM RATINGS
1
Rating Symbol Value Unit 2
3
Collector – Emitter Voltage VCEO 80 Vdc
CASE 29–04, STYLE 17
Collector – Base Voltage VCBO 80 Vdc
TO–92 (TO–226AA)
Emitter – Base Voltage VEBO 5.0 Vdc
Collector Current — Continuous IC 0.5 Adc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 Watt
Derate above 25°C 12 mW/°C
Operating and Storage Junction TJ, Tstg – 55 to +150 °C
Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 °C/W
Thermal Resistance, Junction to Case RqJC 83.3 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) V(BR)CEO 80 — — Vdc
(IC = 10 mAdc, IB = 0)
Collector – Base Breakdown Voltage V(BR)CBO 80 — — Vdc
(IC = 100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage V(BR)EBO 5.0 — — Vdc
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current ICBO — — 100 nAdc
(VCB = 60 Vdc, IE = 0)

ON CHARACTERISTICS*
DC Current Gain hFE —
(IC = 10 mAdc, VCE = 2.0 Vdc) 40 — —
(IC = 100 mAdc, VCE = 2.0 Vdc) BC489 60 — 400
BC489A 100 160 250
BC489B 160 260 400
(IC = 1.0 Adc, VCE = 5.0 Vdc)* 15 — —

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data 1

 Motorola, Inc. 1996
BC489,A,B

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS* (Continued)
Collector – Emitter Saturation Voltage VCE(sat) Vdc
(IC = 500 mAdc, IB = 50 mAdc) — 0.2 0.5
(IC = 1.0 Adc, IB = 100 mAdc) — 0.3 —
Base – Emitter Saturation Voltage VBE(sat) Vdc
(IC = 500 mAdc, IB = 50 mAdc) — 0.85 1.2
(IC = 1.0 Adc, IB = 100 mAdc)(1) — 0.9 —

DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product fT — 200 — MHz
(IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz)
Output Capacitance Cob — 7.0 — pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance Cib — 50 — pF

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.

TURN–ON TIME TURN–OFF TIME

–1.0 V VCC +VBB VCC

5.0 µs +40 V +40 V
100 RL 100 RL
+10 V OUTPUT OUTPUT
Vin RB Vin RB
0
tr = 3.0 ns 5.0 µF 5.0 µF
100 *CS < 6.0 pF 100 *CS < 6.0 pF

5.0 µs
tr = 3.0 ns

* Total Shunt Capacitance of Test Jig and Connectors

For PNP Test Circuits, Reverse All Voltage Polarities

Figure 1. Switching Time Test Circuits

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

 BC489,A,B

f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

300 80
VCE = 2.0 V 60 TJ = 25°C
200 TJ = 25°C
40 Cibo

C, CAPACITANCE (pF)
100 20

70
10
50 8.0
6.0
Cobo
30 4.0
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Current–Gain — Bandwidth Product Figure 3. Capacitance

1.0 k
700
500 ts
300
200
t, TIME (ns)

100
70 tf
50
VCC = 40 V
30 tr
IC/IB = 10
20 IB1 = IB2
TJ = 25°C td @ VBE(off) = 0.5 V
10
5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)

Figure 4. Switching Time

1.0
0.7
r(t) TRANSIENT THERMAL RESISTANCE

D = 0.5
0.5

0.3 0.2
0.1 P(pk)
0.2
(NORMALIZED)

t1
0.1 0.02 t2
0.07 0.01 DUTY CYCLE, D = t1/t2
0.05 SINGLE PULSE D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.03 SINGLE PULSE READ TIME AT t1 (SEE AN–469)
0.02 ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t)
ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t)
0.01
1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
t, TIME (ms)

Figure 5. Thermal Response

Motorola Small–Signal Transistors, FETs and Diodes Device Data 3

BC489,A,B

1.0 k
700 100 µs
500

IC, COLLECTOR CURRENT (mA)

1.0 ms
300 1.0 s
200
TC = 25°C
TA = 25°C
100
70
50
CURRENT LIMIT
30 THERMAL LIMIT
20 SECOND BREAKDOWN LIMIT

BC489
10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 6. Active Region — Safe Operating Area

400

TJ =125°C VCE = 1.0 V

hFE , DC CURRENT GAIN

200

25°C

–55°C
100
80

60

40
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)

Figure 7. DC Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0 1.0
TJ = 25°C TJ = 25°C
0.8 0.8
VBE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)

50
IC = 10 mA 100 mA 250 mA 500 mA
0.6 0.6 mA
VBE(on) @ VCE = 1.0 V

0.4 0.4

0.2 0.2

VCE(sat) @ IC/IB = 10
0 0
0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 8. “On” Voltages Figure 9. Collector Saturation Region

4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

 BC489,A,B

–0.8 –1.0

RθVB, TEMPERATURE COEFFICIENT (mV/°C)

TJ = 25°C
–1.2 –0.8

V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 10
–1.6 –0.6
VBE(on) @ VCE = –1.0 V
RθVB for VBE
–2.0 –0.4

–2.4 –0.2
VCE(sat) @ IC/IB = 10
–2.8 0
0.5 1.0 2.0 5.0 10 20 50 100 200 500 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 10. Base–Emitter Temperature Coefficient Figure 11. “On” Voltages

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

–1.0 –0.8

RθVB, TEMPERATURE COEFFICIENT (mV/°C)

TJ = 25°C

–0.8 –1.2

–0.6 –1.6

RθVB for VBE

–0.4 –2.0
IC = –10 mA –50 mA –100 mA –250 mA –500 mA

–0.2 –2.4

0 –2.8
–0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 12. Collector Saturation Region Figure 13. Base–Emitter Temperature Coefficient

Motorola Small–Signal Transistors, FETs and Diodes Device Data 5

BC489,A,B

PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A B
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
J D 0.016 0.022 0.41 0.55
X X F 0.016 0.019 0.41 0.48
G G 0.045 0.055 1.15 1.39
H H 0.095 0.105 2.42 2.66
SECTION X–X J 0.015 0.020 0.39 0.50
V C K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
1 N P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
N V 0.135 ––– 3.43 –––

STYLE 17:
CASE 029–04 PIN 1. COLLECTOR
2. BASE
(TO–226AA) 3. EMITTER
ISSUE AD

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.

How to reach us:

USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315

MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

*BC489/D*
6 ◊ BC489/D
Motorola Small–Signal Transistors, FETs and Diodes Device Data