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20 STERN AVE. TELEPHONE: (973) 376-2922
SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
U.S.A. FAX: (973) 376-8960

Silicon NPN Power Transistor D209L

DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
• High Switching Speed
• High Reliability
i PIN 1.BASE
2.COLLECTOR
3. BETTER
TO-3PN package
1 2 3

APPLICATIONS
• Switching regulators
• Ultrasonic generators uQi
• High frequency inverters
• General purpose power amplifiers

ABSOLUTE MAXIMUM RATINGS(Ta=25r)

SYMBOL PARAMETER VALUE UNIT

mm
VCBO Collector-Base Voltage 700 V DIM WIN MAX
A 19.90 20.10
Collector-Emitter Voltage 400 V
B 15.38 15.42
VCEO
C 4.75 4.85
D 0.90 1.10
VEBO Emitter-Base voltage 9 V E 1.90 2.10
F 3.40 3.60
G 2.98 3.02
Ic Collector Current-Continuous 12 A
H 3.20 3.40
J 0.595 0.605
Collector Power Dissipation K 19.95 20.25
PC 100 W
@ TC=25'C L 1.98 2.02
N 10.89 10.91
Tj Junction Temperature 150 •c q 4.95 5.05
R 3.35 3.45
Storage Temperature Range -55-150 'C
s 1.995 2.005
Tstg
u 5.90 'L1L
Y 9.90 10.10

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and presage dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and-reliable at the time of c?^n
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors
 Silicon NPN Power Transistor D209L

ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage lc=10mA;l B =0 400 V

V(BR)CBO Collector-Base Breakdown Voltage l c =1mA; I E =0 700 V

IEBO Emitter Cutoff Current VEB= TV; lc=0 0.01 mA

hpEi DC Current Gain lc=5A ; VCE= 5V 8 40

hp£2 DC Current Gain lc=8A;V C E=5V 6 30

VcE(sat) Collector-Emitter Saturation Voltage lc= 5A; IB= 1A 1.0 V

VBE(sat) Base-Emitter Saturation Voltage I C =8A;I B =1.6A 1.2 V

fl Current Gain Bandwidth Product VCE=1 OV,lc=100mA,f=1 MHZ 5 MHZ

Switching times

ts Storage Time 3.0 us

I C =8A,I B 1=-IB2=1.6A

tf Fall Time 0.7 ns