Вы находитесь на странице: 1из 4

2SK3681-01 200401

FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET


Super FAP-G Series
Features Outline Drawings [mm]
High speed switching Low on-resistance
No secondary breadown Low driving power 11.6±0.2

Avalanche-proof

Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)

Maximum ratings and characteristicAbsolute maximum ratings


(Tc=25°C unless otherwise specified)
Item Symbol Ratings Unit Remarks
Drain-source voltage V DS 600 V
VDSX 600 V VGS=-30V
Continuous drain current ID ±43 A
Pulsed drain current ID(puls] ±172 A
Gate-source voltage VGS ±30 V
Non-Repetitive IAS 43 A Tch=25°C
Maximum avalanche current *1
Repetitive or IAR 21.5 A Tch<
=150°C Equivalent circuit schematic
Maximum avalanche current *1
Non-Repetitive EAS 808.9 mJ L=802µH Drain(D)
Maximum avalanche energy VCC=60V *2
Maximum Drain-Source dV/dt dV DS/dt 20 kV/s VDS<= 600V
Peak diode recovery dV/dt dV/dt 5 kV/µs *3
Max. power dissipation PD 2.50 W Ta=25°C
Gate(G)
600 Tc=25°C
Operating and storage Tch +150 °C Source(S)
temperature range Tstg -55 to +150 °C
*1 See to Avalanche Current Graph
*2 See to Avalanche Energy Graph
*3 IF < = BVDSS, Tch <
= -ID, -di/dt=50A/µs, VCC < = 150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Symbol Test Conditions Min. Typ. Max. Units
Drain-source breakdown voltaget V(BR)DSS ID= 250µA VGS=0V 600 V
Gate threshold voltage VGS(th) ID= 250µA VDS=VGS 3.0 5.0 V
VDS=600V VGS=0V Tch=25°C 25 µA
Zero gate voltage drain current IDSS
VDS=480V VGS=0V Tch=125°C 250
Gate-source leakage current IGSS VGS=±30V VDS=0V 10 100 nA
Drain-source on-state resistance RDS(on) ID=26A VGS=10V 0.12 0.16 Ω
Forward transcondutance gfs ID=21.5A VDS=25V 15 30 S
Input capacitance Ciss VDS =25V 5360 8040 pF
Output capacitance Coss VGS=0V 680 1020
Reverse transfer capacitance Crss f=1MHz 40 60
Turn-on time ton td(on) VCC=300V ID=21.5A 80 120 ns
tr VGS=10V 87 131
Turn-off time toff td(off) RGS=10 Ω 190 285
tf 44 66
Total Gate Charge QG VCC =300V 112 168 nC
Gate-Source Charge QGS ID=43A 34 51
Gate-Drain Charge QGD VGS=10V 40 60
Avalanche capability IAV L=802µH Tch=25°C 43 A
Diode forward on-voltage V SD IF=43A VGS=0V Tch=25°C 1.00 1.50 V
Reverse recovery time t rr IF=43A VGS=0V 0.98 µs
Reverse recovery charge Qrr -di/dt=100A/µs Tch=25°C 22.0 µC
Thermalcharacteristics
Item Symbol Test Conditions Min. Typ. Max. Units
Rth(ch-c) channel to case 0.208 °C/W
Thermal resistance
Rth(ch-a) channel to ambient 50.0 °C/W
1
2SK3681-01 FUJI POWER MOSFET
Characteristics

Allowable Power Dissipation Typical Output Characteristics


PD=f(Tc) ID=f(VDS):80 µs pulse test,Tch=25 °C
800 120

110
700
100
20V
600 90 10V
8V
80
500
70

ID [A]
PD [W]

400 60
7.0V
50
300
40

200 30 6.5V

20
100
VGS=6.0V
10

0 0
0 25 50 75 100 125 150 0 4 8 12 16 20 24
VDS [V]
Tc [°C]

Typical Transfer Characteristic Typical Transconductance


ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 ° C gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
100 100

10
10
ID[A]

gfs [S]

0.1

0.1
0 1 2 3 4 5 6 7 8 9 10
0.1 1 10 100
VGS[V]
ID [A]

Typical Drain-Source on-state Resistance Drain-Source On-state Resistance


RDS(on)=f(ID):80 µs pulse test,Tch=25 ° C RDS(on)=f(Tch):ID=26A,VGS=10V
0.4 0.5
VGS=6V 6.5V

0.4
0.3

0.3
RDS(on) [ Ω ]

7.5V
RDS(on) [ Ω ]

8V
0.2 10V
20V max.
0.2
typ.

0.1
0.1

0.0 0.0
0 20 40 60 80 100 -50 -25 0 25 50 75 100 125 150
ID [A] Tch [°C]

2
2SK3681-01 FUJI POWER MOSFET

Gate Threshold Voltage vs. Tch Typical Gate Charge Characteristics


VGS(th)=f(Tch):VDS=VGS,ID=250µA VGS=f(Qg):ID=43A,Tch=25 °C
7.0 14

6.5

6.0 12

5.5 Vcc= 120V

5.0 max. 10 300V

4.5 480V
VGS(th) [V]

4.0 8

VGS [V]
3.5

3.0 min. 6
2.5

2.0 4
1.5

1.0 2
0.5

0.0 0
-50 -25 0 25 50 75 100 125 150 0 20 40 60 80 100 120 140 160 180 200
Tch [°C]
Qg [nC]

Typical Capacitance Typical Forward Characteristics of Reverse Diode


C=f(VDS):VGS=0V,f=1MHz IF=f(VSD):80 µs pulse test,Tch=25 ° C
5
10 1000

4
10 100
Ciss
C [pF]

IF [A]

3
10 10

Coss

2
10 1

Crss

1
10 0.1
0 1 2 3
10 10 10 10 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
VDS [V] VSD [V]

Typical Switching Characteristics vs. ID Maximum Avalanche Energy vs. starting Tch
t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω I(AV)=f(starting Tch):Vcc=60V
10
3 60

50
td(off)

10
2 40
td(on) Non-Repetitive
(Single Pulse)
IAV [A]

30
t [ns]

tf
tr Repetitive
1 20
10

10

0 0
10
-1 0 1 2 0 25 50 75 100 125 150 175 200
10 10 10 10
starting Tch [°C]
ID [A]

3
2SK3681-01 FUJI POWER MOSFET

Maximum Avalanche Energy vs. starting Tch


E(AV)=f(starting Tch):Vcc=60V,I(AV)<=43A
2500

2000 IAS=18A

1500
IAS =26A
EAV [mJ]

1000
IAS=43A

500

0
0 25 50 75 100 125 150
starting Tch [°C]

Maximum Avalanche Current Pulsewidth


2
IAV=f(tAV):starting Tch=25° C,Vcc=60V
10

Single Pulse
Avalanche Current I AV [A]

1
10

0
10

-1
10

-2
10
-8 -7 -6 -5 -4 -3 -2
10 10 10 10 10 10 10
tAV [sec]

Maxmum Transient Thermal Impedance


Zth(ch-c)=f(t):D=0
1
10

0
10
Zth(ch-c) [° C/W]

-1
10

-2
10

-3
10
-6 -5 -4 -3 -2 -1 0
10 10 10 10 10 10 10

t [sec]

http://www.fujielectric.co.jp/denshi/scd/

Вам также может понравиться