ANALYSIS OF DIODE CIRCUITS

VDD = RI+V

Solution:

I = I S e v / ηVT ⎫
⎪
VDD = RI S eV / ηVT + V ⎪
⎬ Analytical solution
or RI S eV / ηVT + V − VDD = f (V ) ⎪
⎪
find root of f (V ) ⎭
Modeling the Diode Forward Characteristic

1, The ‘Ideal’ Model

2, The “Constant-Voltage-Drop” Model

3, The “Battery Plus Resistance” Model

Ex:

V+ − 0.5
i=
R + rD
V = 0.5 + i ⋅ rD

If rD = 200 Ω, and V+ = 10V

∴i = (10-0.5)/(10+0.2) = 9.5/10.2 = 0.931mA

V = 0.5+0.931×200×10-3 = 0.69V
THE SMALL-SIGNAL MODEL AND ITS APPLICATION

v D (t ) = V D + v d (t ) (1)
i D (t ) = I D + id (t ) ( 2)
i D (t ) = I S e vD / ηVT (3)
= I S e (VD + vd ( t )) / ηVT = I S eVD / ηVT ⋅ e vd ( t ) / ηVT

Usually vd(t) << ηVT

VD / ηVT vd (t ) 1 vd2 (t )
∴ iD (t ) ≈ I s (e )(1 + + + L)
ηVT 2! η 2VT2
vd (t )
iD ≈ I S eVD / ηVT [1 + ] ( 4)
ηVT
Compare (4) with (2)

v d (t )
I D = I S eVD / ηVT and i d (t ) = I D
ηVT
v d ηVT 1
rd = = or id = vd
id ID rd

Ex.

Incremental
equivalent circuit

rd
∆V = ±1 ⋅
R + rd
10 − 0.7 9.3
ID = = = 0.93mA
R 10
ηV
but rd = T
ID
50
at room temperature rd = = 53.8Ω
0.93
53.8
∴ ∆V = ±1 ⋅ = ±10.7mV
53.8 + 10 × 103
i.e., a fluctuation of +1V in the DC supply results in a fluctuation of 10.7+mV in the
output. (Regulations.)
Physical Operation of Diodes

The pn junction under open-circuit condition

Reverse-Bias Conditions

Junction or transition capacitance:

dq j
Cj =
dv at the bias po int

k
Cj =
(VO − V D ) m
V O is barrier voltage m = {1 / 3, 3}
i.e., Cj is dependent on voltage
Capacitors that have a voltage dependent capacitance are called “varactors”. They are
manufactured using pn junctions and operated in reverse bias conditions.
Forward Bias Condition

pn(x) = concentration of minority carriers in the n region.

np(x) = concentration of minority carriers in the p region.

The distribution of the 2- charges results in a diffusion capacitance.