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Open Eng.

2017; 7:279–286

Research Article Open Access

Ashish Singh*, Mohammad Aneesh, Kamakshi, and J. A. Ansari

Analysis of Microstrip Line Fed Patch Antenna for


Wireless Communications
https://doi.org/10.1515/eng-2017-0034
Received August 29, 2016; accepted August 31, 2017
1 Introduction
Abstract: In this paper, theoretical analysis of microstrip Nowadays, microstrip patch antennas are important de-
line fed rectangular patch antenna loaded with parasitic vice in wireless communication systems. These anten-
element and split-ring resonator is presented. The pro- nas have been successfully utilized in many communi-
posed antenna shows that the dualband operation de- cation systems [1–3] such as satellite communication/
pends on gap between parasitic element, split-ring res- links (vehicular GPS), cellular communication system
onator, length and width of microstrip line. It is found that (GSM/CDMA), wireless personal area (Bluetooth links),
antenna resonates at two distinct resonating modes i.e., wireless local area network (Wi-Fi) and synthetic aper-
0.9 GHz and 1.8 GHz for lower and upper resonance fre- ture radar (SAR). There are different techniques by which
quencies respectively. The antenna shows dual frequency these antennas can be designed for various wireless ap-
nature with frequency ratio 2.0. The characteristics of mi- plications such as proximity coupling [4], aperture cou-
crostrip line fed rectangular patch antenna loaded with pling [5, 6], loading of notches [7], slots [8–10], parasitic el-
parasitic element and split-ring resonator antenna is com- ements [11], L-strip fed [12, 13], microstrip line feeding [14–
pared with other prototype microstrip line fed antennas. 19]. One of the important techniques is inset feeding by
Further, the theoretical results are compared with simu- which patch antenna can be excited to achieve dual-band
lated and reported experimental results, they are in close and multi-band frequencies for wireless communications.
agreement. The various contributions of researchers and scien-
tists on microstrip line feeding are reported such as, anal-
Keywords: Microstrip line fed, parasitic elements, split-
ysis and design of annular patch antenna with electro-
ring resonator (SRR), Dual-band, Microstrip Patch An-
magnetically coupled microstrip feed line [14], crescent-
tenna (MSA)
shaped multiband planar monopole antenna for mo-
bile wireless applications [15], microstrip antenna array
formed by microstrip line fed tooth-like-slot patches [16],
printed wide-slot antenna with a modified L-shaped mi-
crostrip line for wideband applications [17], microstrip
line-fed printed wide-slot antenna with a parasitic center
patch [18], broadband T-shaped microstrip-fed U-slot cou-
*Corresponding Author: Ashish Singh: Department of Electronics
and Communication University of Allahabad, Allahabad, India- pled patch antenna [19]. All the above reported papers are
211002 of microstrip line fed patch antennas which lack theoret-
Department of Electronics and Communication N.M.A.M. Institute ical analysis, equivalent circuit diagram and has compli-
of Technology, Nitte, India-574110, E-mail: ashsin09@rediffmail.com cated antenna geometry.
Mohammad Aneesh: Department of Electronics and Communica-
In this view, the main objective of this paper is to
tion University of Allahabad, Allahabad, India-211002
Department of Electronics Dr. Ambedkar Institute of Tech- present theoretical analysis, equivalent circuit diagram,
nology for Handicapped, Kanpur, India-208024 E-mail: anee- total input impedance and radiating structures of mi-
shau14@gmail.com crostrip line fed rectangular patch antenna with split-ring
Kamakshi: Department of Electronics and Communication Univer- resonator (SRR)for wireless communications. Theoretical
sity of Allahabad, Allahabad, India-211002
analysis of microstrip line fed rectangular patch antenna
Department of Electronics and Communication IMS Engi-
loaded with parasitic element and split-ring resonator
neering College, Ghaziabad, India-201009, E-mail: kamak-
shi.kumar21@gmail.com has been presented using circuit theory concept based
J. A. Ansari: Department of Electronics and Communication on modal expansion cavity model. The proposed antenna
University of Allahabad, Allahabad, India-211002, E-mail: structures have been realized with the proto-type radiating
jaansari@rediffmail.com

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structures to obtain dualband characteristics. Variation of Table 1: Design specifications of microstrip line feed patch anten-
dimensions of the proposed antenna for the gap between nasare given as

parasitic element, split-ring resonator, length and width of


microstrip line are discussed in next section. Thickness of dielectric substrate (H) 1.5 mm
Permittivity of Substrate (ε r ) 2.65
Loss tangent of substrate (tanδ) 0.0015
Width of patch and parasitic patch (W) 23 mm
2 Antenna designs Length of patch and parasitic patch (L) 58 mm
Width of microstrip line (Ws ) 4.0 mm
A rectangular patch with SRR and parasitic patch antenna Gap between the feed patch and
4.0 mm
along with similar proto-type microstrip line fed patch an- parasitic patch (G)
tennas are shown in Fig. 1. The Fig. 1(a) shows the side Length of SRR’s (SL ) 25.6 mm
view of antennas. Antenna 1 is shown in Fig. 1(b), con- Width of SRR’s (Sw ) 25.6 mm
ventional microsrtip line fed patch antenna of dimensions Width of both SRR’s arm (Sa ) 12.65 mm
L×W is excited by the 50 Ω microstrip line. Antenna 2 is Length of SRR’s arm (St ) 0.5 mm
shown in Fig. 1(c), it is similar to the Antenna1 except it has Gap between two SRR’s arms (g1 ) 0.5 mm
parasitic element of dimension L×W and gap between the Length of Microstrip line (Ls ) 22.5 mm
fed patch and parasitic patch is G. Figure 1(d)-(e) is the pro-
posed radiating structure with top and bottom view. The
proposed radiating structure is Antenna 3 which has SRR 1
L1 = (3)
on ground plane and parasitic patch is placed parallel to C1 ω2r
the fed patch on same plane at a distance G. A rectangu- Quality factor, √
lar patch of dimension L×W is fed through microstrip line c εe
Q=
fed. The feeding is given at end of microstrip line via coax- 4fH
ial connector of diameter 0.72 mm. Design specification of Where
the antennas are given in Table 1. L- Length of rectangular patch,
Figure 2 shows the current distribution on radiating W- Width of rectangular patch,
structure of the Antenna 3 at lower (0.9 GHz) and upper H- Thickness of the substrate material,
(1.8 GHz) resonance frequencies. From the figure, it has X0 - x coordinates of feed point, i.e.,X0 =Ls,
been observed that proposed radiating structure has two ϵ e - effective permittivity of the medium.
directions of currents flowing on the radiating patch. The The equivalent circuit of the parasitic patch is shown
first is normal to the patch and other current flows due to in Fig. 3(b), its input impedance is represented as Zpp ,
the coupling between the fed patch with parasitic patch where R2 , C2 and L2 can be calculated as R1 , C1 and L1 with
and the radiating patch with SRR. These combine mecha- same equations, here X0 is considered as 0. The equiva-
nism provide dual band operation. lent circuit diagram of the gap between the fed patch and
the parasitic patch Zcc is shown in Fig. 3(c), which is repre-
sented as the combination of capacitances Cg and Cp1 . The
3 Theortical analysis and its expression of gap capacitance Cg and plate capacitance
Cp1 of the microstrip line can be calculated as [22–24]
equivalent circuits (︂ (︂ )︂)︂
G
C g =0.5.H.Q1 exp −1.86
A simple rectangular patch is considered as a parallel com- H
[︃ {︃ (︃ √︂ )︃}︃]︃
bination of resistance R1 , inductance L1 , and capacitance H
1 + 4.09 1 − exp 0.75 (4)
C1 circuit and its input impedance is represented as Zp . W
The equivalent circuit of the rectangular patch is shown
(︂ )︂
in Fig. 3(a), where R1 , C1 and L1 can be defined as [20, 21], Q2 + Q3
C p1 = C L (5)
(︂ )︂ Q2 + 1
LW ε0 ε e πX0
C1 = cos2 (1) Where,
2H L
{︃ (︂ )︂Q4 }︃
Q W
R1 = (2) Q1 = 0.04598 0.03 + (0.272 + ε r 0.07) ,
H
ω2r C1

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Analysis of Microstrip Line Fed Patch Antenna | 281

(a) (b)

(c) (d)

(e)

Figure 1: (a)Side view microstrip line fed patch antennas(b) Simple microstrip line fed patch (antenna 1), (c) microstrip line fed patch with
parasitic element (antenna 2),(d) Top View and (e) Bottom View of proposed microstrip line fed patch antenna (antenna 3).

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282 | Ashish Singh et al.

(a) (b)
(a)
Figure 2: Current distribution (a) Lower and (b) higher resonance
frequency.

[︂ ]︂ (︂ )︂3.23 (︂ )︂1.05
W G G
Q2 =0.107 +9 + 2.09
H H H
[︃ ]︃
1.5 + 0.3( W
H)
+
1 + 0.6( W
H)
(b)
Q3 = exp(−0.5978) − 0.55
Q4 = 1.23
CL is the terminal capacitance of the open circuited con-
ductor is given as,

ε eff
C L = C ll
z0 c
where Cll is the conductor extension length, ϵ eff is effective
dielectric constant.
[︃ ]︃
(ε e + 0.3)( W
H + 0.264)
C ll = 0.412
(ε e − 0.258)( W
H + 0.8) (c)

Z0 is characteristic impedance of the patch, c is the velocity


of light.
The microstrip line of the rectangular patch is con-
sidered as combination of L and C. The equivalent cir-
cuit of the microstrip line rectangular patch is shown in
Fig. 3(d), where LL and CL are inductance and capacitance
of strip [22, 23].
(d)
√︀
L L = 100.H(4 W s /H − 4.21)nH (6)
Figure 3: Equivalent Circuits diagram of (a) Simple patch (Zp ) (b)
parasitic patch (Zpp )(c) Gap between two patch (Zcc ) (d) Microstrip
line patch (ZL )
C L = W s {(9.5ε r + 1.25)W s /H + 5.2ε r + 7.0}pF (7)
Resonance frequency of the microstrip line antenna is
given as,

f = c/2L es ε re (8)
where

ε re = 1/2[(ε r + 1) + (ε r − 1)(1 − 12.H/W s )−1/2 ],

Les = LS +∆LS ,
ε re - Effective dielectric constant,
Les -Effective increase in length of strip,
Figure 4: Equivalent circuit diagram of the antenna.
(ε re + 0.3)(W s /H + 0.264)
∆L s = H.0.412 ,
(ε re − 0.258)(W s /H + 0.8)

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Analysis of Microstrip Line Fed Patch Antenna | 283

ϵ r -Dielectric constant, theoretical and reported experimental results of the mi-


The characteristic impedance of microstrip line [20– crostrip line fed rectangular patch antenna with parasitic
22], element and SRR are in close agreement. From figure it is
1 observed that the antenna shows dual frequency behav-
Z L = jωL L + 1
(9)
jωC L + jωL L ior with frequency ratio 2.0 (Simulated) and 2.12 (theoret-
Therefore, the total input impedance (Zin ) of antenna ical). Theoretical results are based on circuit theory con-
can be calculated by equivalent circuit diagram Fig. 4 as cept based on cavity model whereas simulated results are
obtained using IE3D software that is based on Method of
1
Z in = Z L + 1
(10) Moments. Further, analysis of the antenna 3 is shown in
1
+ Z1p + Z pp
1
+ Z1cc figures 7 to 10 which are based on circuit theory concept
jωC c + 1
jωL c
are described below.
where Lc and Cc is the inductance and capacitance of SRR’s
From Figure 7, it is observed that on decreasing the
can calculated as [24].
substrate thickness (H=1.5 mm to 0.5 mm) frequency ratio
Now using equation (10) the total input impedance of
decreases from 2.0 to 1.27 whereas on increasing the sub-
the proposed antenna is calculated. Their various antenna
strate thickness (H=1.5 mm to 2.5 mm) frequency ratio in-
parameters such as reflection coefficient, VSWR and return
creases to 2.96. This happens because on increasing and
loss are calculated as:
decreasing the height of the substrate equations (1), (4)
Reflection Coefficient
and (6) are effected which is responsible for variation in
Z − Z in resonance frequency of the radiating patch.
Γ= ,
Z + Z in Figure 8 shows the variation of reflection coefficient
where with frequency on decreasing (Ws =4 mm to 2 mm) and in-
Z is the input impedance of the microstrip fed (50 Ω). creasing (Ws =4 mm to 6 mm) the width of microstrip line,
there is no change in the frequency ratio of upper to lower
1+Γ
VSWR = , resonance frequency whereas slight shifting is observed
1−Γ
on both upper and lower resonance frequencies. This is
and RL=20 log |r|
due to the capacitance CL which is directly proportion to
width of microstrip line Ws , from equation (7).
From Figure 9, it is observed that on increasing the
4 Discussion of results length of the microstrip line (Ls =21.6 mm to 29.6 mm),
lower and higher resonance frequencies shift towards
The antennas 1, 2, and 3 have been simulated using soft- lower resonance side whereas there is no change in the fre-
ware IE3D based on Method of Moments. Figure 5 presents quency ratio of upper to lower resonance frequency. This
the variations of reflection coefficients for different radi- affects the equation (8) as resonance frequency of the mi-
ating structures. Antenna1 is resonating at 4.1 GHz below crostrip line f is inversely proportional to the length mi-
−10 dB offer a bandwidth of 139 MHz (3.94-4.12 GHz) which crostrip line Ls .
can be utilized for satellite communication. Antenna 2 is Figure 10 shows that on decreasing gap between the
resonating at three distinct frequency modes 3.144 GHz, fed patch and parasitic patch (G=4 mm to 3 mm), the
3.252 GHz and 3.804 GHz. In theses frequency bands only upper and lower resonance frequencies shift towards the
3.804 GHz frequency has efficient bandwidth of 441 MHz lower side. Further, on increasing G=4 mm to 7 mm, upper
(3.696-3.864 GHz) that can be utilized for down link in and lower resonance frequencies shift towards higher side.
satellite communication. Antenna 3 resonates at two dis- This happens because the gap capacitance Cg is affected
tinct frequencies modes 0.9 GHz and 1.8 GHz below −10 dB on increasing and decreasing the gap between fed patch
and meets the requirement of mobile communication. It and parasitic patch G i.e., from equation (4), Cg changes
is observed that on incorporating parasitic elements and exponentially on variation of G. Thus, there is no huge
SRR resonating frequencies shift toward lower side. This variation on varying G.
is due to the increase radiation resistance of the proposed From Figure 11, shows the radiation pattern at lower
antenna. There is a dip at 1.5 GHz in proposed antenna, (0.9 GHz) and higher (1.8 GHz) resonance frequency and
this is observed because gap between the parasitic patch antenna shows circular polarization. The 3 dB beam width
and fed as well as gap between SRR arms. at lower resonance frequency for Etheta , phi=0∘ is 130.33∘
Figure 6 shows the variation of reflection coefficient and Etheta , phi=90∘ is 88.92∘ whereas at higher resonance
with frequency for the proposed antenna. The simulated,

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284 | Ashish Singh et al.

Figure 7: Variation of reflection coeflcient (dB) with frequency on


Figure 5: Comparisons of proposed antenna 3 with antennas 1 and varying height of the substrate(H).
2.

Figure 6: Comparison between theoretical, experimental [25] and


simulated [26] results.
Figure 8: Variation of reflection coeflcient (dB) with frequency on
varying width of microstrip (Ws ).

frequency for Etheta , phi=0 is 165.83∘ and Etheta , phi=0 is


83.7∘ .

5 Conclusion
From the above analysis it is inferred that theoretical re-
sults are in close agreement with simulated and reported
experimental results for inset fed rectangular patch an-
tenna loaded with parasitic element and split ring res-
onator. The frequency ratio of the proposed antenna de-
pends on microstrip length and width, thickness of dielec-
tric substrate and gap between parasitic patch. The pro-
posed antenna has frequency ratio 2.0 and maximum gain
1.8 dBi. The proposed antennas can be utilized for wire-
less communications such as mobiles and down linking Figure 9: Variation of reflection coeflcient (dB) with frequency on
for satellite communications. varying length of microstrip (Ls ).

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Analysis of Microstrip Line Fed Patch Antenna | 285

Figure 10: Variation of reflection coeflcient (dB) with frequency on


varying gap between fed patch and parasitic patch.
(a)

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[16] H. Wang, X. B. Huang, D. G. Fang, and G. B. Han, “A mi- than 40 research papers in different national and inter-
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Nowadays, she is working as an Assistant Professor in IMS
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University, India in 2007 and completed
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his M. Tech degree in Advance Commu-
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Artech House, 2003. Institute of Agriculture, Technology & Sci-
[21] I.J. Bahal and P.Bartia, Microstrip patch antenna, Artech ences Allahabad, India in 2009 and com-
House,1980.
pleted his D.Phil. degree from Dept. of
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Electronics & Communication University of Allahabad, Al-
IEEE Trans. Antennas propag., vol. 32, pp. 1375-1379, 1972.
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88, pp. 1161-1175, 2001. nals and conference proceedings. His areas of interest are
[24] J. D. Baena et al., “Equivalent-Circuit Models for Split-Ring Patch antenna, Neural Network, and Optical communica-
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tion. He worked as Assistant Professor in Dr. Rizivi College
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Tech.,vol. 53, pp. 1451-1462, 2005.
of Engineering, Kaushambi. Nowadays. he is working as
[25] J.-X. Niu, “Dual-band dual-mode patch antenna based on Assistant Professor in Dr. Ambedkar Institute of Technol-
resonant-type metamaterial transmission line,” Electronics ogy for Handicapped, Kanpur, India-208024.
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[26] Zeland, IE3D simulation software, Version 14.05, ZelandInc.,
mar, Ghazipur (U.P.), India. He received
USA, 2008.
the B.Sc. and B.Tech. degrees in Electron-
Ashish Singh received his B.Tech degree
ics and Telecommunications from Univer-
in Applied Electronics and Instrumenta-
sity of Allahabad, Allahabad, India. The
tion from the Uttar Pradesh Technical
M.Tech. degree in Communication Sys-
University, India, in 2007. He completed
tems from the Institute of Technology, Ba-
his M.Tech. and D.Phil. degrees in Com-
naras Hindu University (BHU), Varanasi,
munication Technology from Department
India, in 1991 and the Ph.D. degree from
of Electronics and Communication, Uni-
Mahatma Gandhi Chitrakoot Gramodaya Vishvavidyalaya,
versity of Allahabad in 2009 and 2015 re-
Chitrakoot (Satna), India, in 2000. He has published 100
spectively. He has published more than
research papers in different national and international
40 research papers in different national
journals and conference proceedings. His current area of
and international journals and conference proceedings.
research is microstrip antenna, millimeter wave, and fiber
His are of interests are Patch Antenna, Millimeter waves,
optics. He is presently working as a Professor with the De-
Optical communication and Bio-medical Instrumentation.
partment of Electronics and Communication, University of
He worked as an Assistant Professor in Raghu Engineering
Allahabad, Allahabad, India.
College, Visakhapatnam. Presently, he is working at same
designation in NMAMIT, Nitte India.
Kamakshi received her B.Tech. degree in
Electronics Engineering from the Institute
of Engineering and Rural Technology Al-
lahabad, U.P., India in 2007. She com-
pleted her M.Tech. and D.Phil. degrees
in Communication Technology from De-
partment of Electronics and Communica-
tion, University of Allahabad in 2009 and
2017 respectively. She has published more

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