1034 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 52, NO.

3, MARCH 2004

Narrow Bandpass Filters Using Dual-Behavior

Resonators Based on Stepped-Impedance
Stubs and Different-Length Stubs
Cédric Quendo, Eric Rius, Member, IEEE, and Christian Person

Abstract—Dual-behavior resonators (DBRs) are based on

the parallel association of two different bandstop structures,
which implies a constructive recombination. Two kinds of stubs,
stepped-impedance and different-length stubs, are examined in
this paper. The first section concerns stepped-impedance stubs. We
have previously reported some simplifications of the fundamental
equations. Here, we propose a new simplification together with
synthesis; both allow an independent control of the two attenuated
bands. In a second section, a DBR composed of two uniform stubs
of different lengths is studied instead of two stepped-impedance
open-circuited stubs. This implies a greatly simplified synthesis
and implementation. Some other structures combining short- and
open-circuited stubs are also introduced. Throughout the paper,
simulations are proposed to illustrate the possibilities offered by
such topologies. Experimental results in microstrip technology are
also presented in order to validate our idea. Finally, benefits and Fig. 1. Electrical response of a DBR.
drawbacks of the different structures are discussed.
Index Terms—Filter synthesis, microstrip technology, • one pole in the operating bandwidth;
microwave bandpass filter, open-circuited stubs. • one transmission zero in the lower attenuated band;
• one transmission zero in the upper attenuated band.
I. INTRODUCTION Such a structure can produce a response like the one displayed
in Fig. 1.

R ADIO-FREQUENCY (RF) filters are commonly imple-

mented inside receivers with drastic specifications about
rejection in the adjacent transmitted frequency band so as to
preserve them from possible damage and degradations due to
high TX power [1]. Today, these difficult problems are the sub-
ject of intensive studies in microwave planar filters [2]–[10]. For
such applications, the use of dual-behavior resonators (DBRs)
appears as a quite convenient solution because they allow the
control of two attenuated bands on either side of one bandpass
[2]. A DBR results from the association of two different parallel
bandstop structures. Each of them brings its own transmission
zero with respect to its fundamental resonant condition. At the
same time, their association is transparent within a given oper-
ating frequency once the bandstop structures have been prop-
erly connected under constructive recombination criteria. This
results in a bandpass response created between the abovemen-
tioned lower and upper rejected bands.
According to the number of available parameters and to the
initial behavior of each bandstop structure, DBR allows an in-
dependent control of the following:
Manuscript received July 17, 2003; revised Ocotber 21, 2003.
The authors are with the Laboratoire d’Electronique et des Systèmes de
Télècommunications, Université de Bretagne Occidentale, 29285 Brest Cedex,
France.
Digital Object Identifier 10.1109/TMTT.2004.823582
0018-9480/04$20.00 © 2004 IEEE
This paper describes some possible topologies based on the
DBR concept. All of them allow the independent control of
one bandpass and two bandstops. The first part focuses on
the use of stepped-impedance open-circuited stubs. General
equations about this structure have already been introduced,
but the proposed simplification induces the dependence of the
upper and lower transmission zeros [2]. The simplification of
the equations proposed here keeps four physical parameters
independent. Thus, through this new synthesis four electrical
parameters, i.e., the central frequency, bandwidth, and two
transmission zeros, are independently controlled. Further to
the development of the synthesis, we will show the independence
of the different electrical parameters through three examples.
To validate the concept and demonstrate the contribution of
these new analytical equations, they will then be applied to
achieve a second-order DBR filter with a symmetric electrical
response. The previously developed synthesis [2] could not
lead to such a response. The second part deals with some
other bandstop structures based upon uniform stubs instead of
stepped-impedance open-circuited stubs. Thus, the lengths of the
stubs have to be different to ensure a constructive-recombination
criteria while considering their parallel association. We will first
study a solution already presented by Rizzi [11] and based upon
two different-length open-circuited stubs. Some simulations
that use the synthesis will be performed to demonstrate the
QUENDO et al.: NARROW BANDPASS FILTERS USING DBRs BASED ON STEPPED-IMPEDANCE STUBS AND DIFFERENT-LENGTH STUBS 1035

(5)

(6)

and

(7)

Fig. 2. Open-circuited stepped-impedance DBR.

To simplify the equations, we can write

(8)
great flexibility of such a structure. To validate the concept, a
(9)
filter will then be implemented in microstrip technology and
the experimental results discussed. Finally, the same technique (10)
based on the well-known slope parameter method with additional
transmission-zero conditions will be applied to develop the (11)
synthesis of an th-order DBR filter based on short-circuited (12)
shunt stubs. Development will be pursued with the case studies
of DBR filters issued from the association of short- and open- with
circuited stubs.
The benefits and drawbacks of the different studied structures (13)
will be discussed and some perspectives put forward.
(14)
II. OPEN-CIRCUITED STEPPED-IMPEDANCE STUBS
DBR STRUCTURE (15)

In the case described in Fig. 2, eight degrees of freedom are As the resonators are characterized by a proper coefficient,
available; so as to simplify the structure, the lengths can be set the designer only needs to calculate the characteristic imped-
equal ( ). This avoids the resolution ances of the quarter-wavelength admittance inverters
of nonlinear equations while keeping five physical parameters defined as follows [12]:
independent. Moreover, in a further phase of design, these pa-
rameters could be optimized for better rejection.
(16)
As the DBR of concern is composed of two stepped-
impedance open-circuited stubs, its general equations have
been previously introduced [2, eqs. 3–21]. where
To get an analytical synthesis of the filter, the above equations
need to be simplified while keeping four physical parameters (17)
independent . In this aim, one should set a condition not on the
characteristic impedances themselves [2], but on their ratio. The
following equation agrees with these requirements: (18)

(1)
(19)
These DBRs can be modeled by their equivalent slope pa-
rameter . In the general case of an th-order DBR filter, the where the ’s are the Chebyshev coefficients of the equivalent
th resonator can be defined as follows: low-pass filter prototype and define the bandwidth ripple, the
parameter is the cutoff frequency of the low-pass prototype,
(2) and are the terminating conductances of the circuit, and
is defined as the fractional bandwidth.
The use of an admittance inverter implies that coef-
ficients become dimensionless constants. This introduces a
(3) tuning parameter, which can be chosen mainly according to
the achievable characteristic impedance values of the tech-
(4) nology in use.
1036 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 52, NO. 3, MARCH 2004
Fig. 3. Ideal transmission-line scheme of a fifth-order DBR filter based upon
stepped-impedance open-circuited stubs.
Fig. 4. Simulated electrical response of a fifth-order DBR filter based upon
stepped-impedance open-circuited stubs.
The synthesis development is now complete and can be
employed to design an th-order filter with two independent
attenuated bands composed of transmission zeros.
To illustrate this general synthesis, an ideal transmission line
circuit (see Fig. 3) was simulated with Agilent ADS. It produced
the electrical response of a fifth-order filter (see Fig. 4).
Fig. 4 shows that this general synthesis allows us to get a very
efficient theoretical response. However, to assess the benefits of
this structure in term of rejection, it needs to be tested under
technological constraints. Thus, the characteristic impedances
were set between 25–95 . For better comparison criteria, all
of the structures presented in this paper will be tested under the
same constraints.
III. SECOND-ORDER FILTER THEORETICAL RESPONSES
UNDER TECHNOLOGICAL CONSTRAINTS
By using the synthesis described by the above equations, the
flexibility of the proposed structure can be efficiently enhanced.
Three different electrical responses of the second-order DBR
filter will be introduced hereafter to illustrate the independence
of four electrical parameters, i.e., central frequency, bandwidth,
and two transmission zeros. These responses show the same
fractional bandwidth (5%) and central frequency (1 GHz).
However, the transmission zeros are tuned one by one to
demonstrate the great flexibility of the structure. As mentioned
hereabove, the characteristic impedances chosen to carry out
our simulations were strictly within 25 and 95 . Fig. 5 depicts
the ideal-transmission-line scheme of the second-order filter.
Fig. 5. Ideal transmission-line scheme of the second-order DBR filter based
upon open-circuited stubs.
TABLE I
INPUT PARAMETERS OF THE FIRST SIMULATION
TABLE II
OUTPUT PARAMETERS OF THE FIRST SIMULATION
Thus, for the first simulation, the two resonators were set
identical.
The use of (2)–(19) in association with the input parameters
reported in Table I led to the output parameters displayed in
Table II. Fig. 6 illustrates the associated electrical response of
the filter.
Table III gives the input parameters used in the second simu-
lation. Only the value of , the coefficient of the lower trans-
mission zero of the second DBR, was changed. It then affected
the output parameters (see Table IV), as well as the associated
response (see Fig. 7).
The input parameters used for the third simulation are listed
in Table V. This time, the sole modification was approximately
, the coefficient of the upper transmission zero of the second
DBR. As was done previously, the other parameters were kept
identical. Table VI and Fig. 8 show the resulting output param-
eters and the associated filter response, respectively.
With a similar range of characteristic impedances, the second
transmission zero could be placed at a higher frequency. How-
ever, to ensure a good rejection level between the two higher
transmission zeros, a higher order filter would be required.
As these three examples clearly demonstrate the flexibility of
the structure, Section IV will describe a concrete one achieved
in microstrip technology.
QUENDO et al.: NARROW BANDPASS FILTERS USING DBRs BASED ON STEPPED-IMPEDANCE STUBS AND DIFFERENT-LENGTH STUBS
Fig. 6. First simulated electrical response of a second-order DBR filter based
upon stepped-impedance open-circuited stubs.
TABLE III
INPUT PARAMETERS OF THE SECOND SIMULATION
TABLE IV
OUTPUT PARAMETERS OF THE SECOND SIMULATION
Fig. 7. Second simulated electrical response of a second-order DBR filter
based upon stepped-impedance open-circuited stubs.
IV. IMPLEMENTATION IN MICROSTRIP TECHNOLOGY
To validate the concept and demonstrate the contribution of
this new synthesis, we developed a second-order DBR filter with
a symmetric electrical response. The synthesis previously re-
ported in [2] failed to achieve this.
The filter was implemented in microstrip technology on a
classical alumina substrate ( m; ).
1037
TABLE V
INPUT PARAMETERS OF THE THIRD SIMULATION
TABLE VI
OUTPUT PARAMETERS OF THE THIRD SIMULATION
Fig. 8. Third simulated electrical response of a second-order DBR filter based
upon stepped-impedance open-circuited stubs.
This original synthesis was used to implement a microstrip
technology-achieved filter on a classical alumina substrate (
m; ). We chose a narrow-band filter with sym-
metric rejected bands. Its electrical parameters were 3 GHz and
4% for the central frequency and the relative bandwidth, respec-
tively. Fig. 9 displays the transmission zero frequencies, i.e.,
2.37 and 3.42 GHz for the first DBR and 2.58 and 3.63 GHz
for the second one.
In filter design, since the first step is circuit analysis, this was
achieved by including models of microstrip transmission lines,
cross junctions, and open-circuited stubs. Comparison of the cir-
cuit analysis results with those of the synthesis demonstrated the
need for slight modifications in order to correct the parasitic ef-
fects issued from the discontinuities. The second step is then the
electromagnetic analysis of the structure carried out with a com-
mercial simulator Agilent Momentum. This simulator is
based on the method of moments, which appears to be suffi-
cient for such a microstrip structure. In addition to this proce-
dure, some modifications were also needed. The final simulated
electrical response is presented in Fig. 10.
Losses are taken into account because of the integration of
the metal conductivity and of alumina in the models. At
the central frequency, insertion losses are about 1.1 dB.
1038 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 52, NO. 3, MARCH 2004

Fig. 11. Layout response of a second-order DBR filter based upon

stepped-impedance open-circuited stubs on alumina substrate.

Fig. 9. Electrical response of a second-order DBR filter based upon

stepped-impedance open-circuited stubs (ideal transmission lines).

Fig. 12. DBR based upon different-length open-circuited stubs.

V. OPEN-CIRCUITED DIFFERENT-LENGTH STUBS

DBR STRUCTURE
This section focuses on the case described in Fig. 12. As be-
fore, the parallel association of the two open-circuited stubs has
no effect on the transmission-zero frequencies; thus, it sounds
judicious to first define them. The input impedances of stubs can
be used separately to set the transmission zeros.
These DBRs can now be modeled by their equivalent slope
parameter . For an th-order DBR filter, the th resonator can
be defined as follows:

(20)

(21)

Fig. 10. Electrical response of a second-order DBR filter based upon

(22)
stepped-impedance open-circuited stubs on alumina substrate.
(23)

Fig. 11 presents the layout of the filter. Its overall area is ap- (24)
proximately 21.19 30.145 mm .
The measurements presented in Fig. 10 show quite a good (25)
agreement with the electromagnetic simulations. However, one
should note a slight frequency shift due to a systematic error in- with
duced by the calculation method and the uncertainty regarding
the substrate permittivity. The measured insertion losses in (26)
the bandpass are 1 dB in accordance with the electromagnetic
simulation. (27)
The concept is therefore validated, and it would be worth
studying other structures based upon the same fundamental idea As the resonators are characterized by a proper coeffi-
in order to compare their performances in terms of rejection. cient, the designer uses (16)–(19) to calculate the characteristic
QUENDO et al.: NARROW BANDPASS FILTERS USING DBRs BASED ON STEPPED-IMPEDANCE STUBS AND DIFFERENT-LENGTH STUBS 1039

Fig. 13. Ideal transmission-line scheme of the second-order DBR filter based
on open-circuited stubs.
Fig. 14. First simulated electrical response of a second-order DBR filter based
upon open-circuited stubs.
TABLE VII
INPUT PARAMETERS OF THE FIRST SIMULATION
TABLE IX
INPUT PARAMETERS OF THE SECOND SIMULATION

TABLE VIII
OUTPUT PARAMETERS OF THE FIRST SIMULATION
TABLE X
OUTPUT PARAMETERS OF THE SECOND SIMULATION

impedances of the quarter-wavelength admittance in-

verter [12].

VI. SECOND-ORDER FILTER THEORETICAL RESPONSES

By using the synthesis described by the above equations, the
flexibility of the structure can be efficiently and quickly de-
scribed. Fig. 13 depicts the ideal transmission-line scheme of
the second-order filter.
As in the step-impedance case, three different electrical re-
sponses of a second-order DBR filter are displayed further to
simulations carried out with characteristic impedances strictly
set within 25 and 95 ; they present the same fractional band-
width (5%) and central frequency (1 GHz). However, the trans-
mission zeros are tuned one by one to demonstrate the great Fig. 15. Second simulated electrical response of a second-order DBR filter
flexibility of the structure and the independence of the different based upon open-circuited stubs.
parameters (central frequency, bandwidth, and the two transmis-
sion zeros). output parameters (Table X), as well as the associated response
The use of (20)–(27) and (16)–(19) in association with the (Fig. 15).
input parameters reported in Table VII led to the output param- Finally, for the third simulation, the input parameters are sum-
eters listed in Table VIII. Fig. 14 shows the associated electrical marized in Table XI. This time, the sole modification is made
response of the filter. to , the coefficient of the upper transmission zero of the
Table IX gives the input parameters used in the second simu- second DBR. As before, the other parameters were kept iden-
lation. Only the value of , the coefficient of the lower trans- tical. Table XII and Fig. 16 show the resulting output parame-
mission zero of the second DBR, was changed. This affected the ters and the associated filter response, respectively.
1040 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 52, NO. 3, MARCH 2004
TABLE XI
INPUT PARAMETERS OF THE THIRD SIMULATION
TABLE XII
OUTPUT PARAMETERS OF THE THIRD SIMULATION
Fig. 16. Third simulated electrical response of a second-order DBR filter
based upon open-circuited stubs.
When taking into account the achievable characteristic im-
pedances, the transmission zeros can be shifted beyond 1.6 GHz,
but then for a second-order filter the rejection between the two
transmission zeros becomes insufficient. The control of a wide
rejected band needs more transmission zeros and thus a higher
order filter.
To conduct the simulations reported in this section, the pre-
scribed transmission zeros are shifted while keeping the band-
pass characteristics constant. Their results bring to the fore the
great flexibility induced by this kind of DBR, as well as its
associated synthesis.
VII. IMPLEMENTATION IN MICROSTRIP TECHNOLOGY
By using this novel synthesis, we implemented on a classical
alumina substrate ( m; ) a microstrip tech-
nology-achieved narrow-band filter with asymmetric rejected
bands. Its electrical parameters were 3 GHz and 4% for the cen-
tral frequency and the relative bandwidth, respectively. Fig. 17
displays the electrical response obtained, which shows that the
transmission zero frequencies are 2.25 and 3.45 GHz for the first
DBR and 2.55 and 4.20 GHz for the second one.
Fig. 17. Electrical response of a second-order DBR filter based upon
open-circuited stubs (ideal transmission lines).
Fig. 18. Layout response of a second-order DBR filter based upon
open-circuited stubs on alumina substrate.
The filter layout is represented in Fig. 18. Its overall area is
approximately 21.44 25.415 mm .
The experimental responses shown in Fig. 19 agree quite
well with the electromagnetic simulations despite a frequency
shift likely due to a systematic error induced by the calculation
method and the uncertainty about the substrate permittivity.
This frequency shift is higher than the one observed with the
previous structure because of the use of a different dielectric
substrate. The experimental 1.6-dB insertion losses in the band-
pass are in agreement with the electromagnetic simulation. The
concept is therefore validated, and it would be worth studying
other structures based upon the same fundamental idea in order
to compare their performances in terms of rejection.
VIII. OTHER STRUCTURES COMBINING SHORT-
AND OPEN-CIRCUITED STUBS
Other structures can be developed from the same basic idea.
This section proposes three other solutions based on the DBR
concept. Two short-circuited stubs are involved in the first one,
whereas the second and the third ones involve hybrid solutions
with one short-circuited stub and one open-circuited stub. As the
entire theory was previously developed above, we will just deal
QUENDO et al.: NARROW BANDPASS FILTERS USING DBRs BASED ON STEPPED-IMPEDANCE STUBS AND DIFFERENT-LENGTH STUBS 1041

Fig. 20. Ideal transmission-line scheme of the second-order DBR filter based
upon short-circuited stubs.

TABLE XIII
INPUT PARAMETERS OF THE THIRD SIMULATION

Fig. 19. Electrical response of a second-order DBR filter based upon

open-circuited stubs on alumina substrate.

with the synthesis and flexibility of the different DBR structures

so as to discuss the benefits and drawbacks of each structure
from its performances in terms of rejection.
TABLE XIV
A. DBR Using Short-Circuited Stubs of Different Lengths OUTPUT PARAMETERS OF THE THIRD SIMULATION
1) Synthesis: These DBRs can also be modeled through
their equivalent slope parameter . Thus, for an th-order DBR
filter, the th resonator can be defined as follows:

(28)

(29)

(30)

(31)

(32)

(33)

The equations related to the inverters are obviously un-

changed [see (16)–(19)].
2) Capabilities of the Structure: As the independence of the
transmission zeros was demonstrated above, only the perfor-
mances of the structures will be dealt with here. The bandwidth
and characteristic-impedance range are alike to allow compar-
isons in term of rejection close to the bandpass and far from it.
Fig. 20 depicts the ideal transmission-line scheme. The use of
(28)–(33) and (16)–(19) in association with the input parameters
reported in Table XIII led to the output parameters displayed in
Table XIV. Fig. 21 illustrates the electrical response of the filter
of concern.
It is worth noting that, in this case, the transmission zero
cannot exceed 1.56 GHz because of the periodic behavior of
Fig. 21. Third simulated electrical response of a second-order DBR filter
based upon short-circuited stubs.
the stub which induces the lower transmission zero. It indeed
implies a second and undesired constructive recombination as
evidenced in Fig. 22 when is equal to 1.6.
Thus, for a given characteristic impedance range, the DBR
based upon two short-circuited stubs of different lengths allows
better control than the previous one near the bandpass. On the
other hand, the filter based upon two open-circuited stubs of
different lengths controls a wider rejected band.
1042 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 52, NO. 3, MARCH 2004

TABLE XV
INPUT PARAMETERS OF THE SIMULATION

Fig. 22. Unwanted constructive recombination induced in a second-order TABLE XVI

DBR filter based upon short-circuited stubs. OUTPUT PARAMETERS OF THE SIMULATION

Fig. 23. Ideal transmission-line scheme of the second-order DBR filter based
upon short- and open-circuited stubs of different lengths.

These observations highlight the potential interest of hybrid

structures based on the association of short- and open-circuited
stubs.

B. DBR Using Short- and Open-Circuited Stubs of Different

Lengths
Here, the focus is on two case-studies, which are: 1) a
Fig. 24. Simulated electrical response of a second-order DBR filter based upon
short-circuited stub for low-frequency rejection associated short-circuited stub at low frequencies.
with an open-circuited stub for high-frequency rejection and
2) a short-circuited stub for high-frequency rejection together
with an open-circuited stub for low-frequency rejection. Here ones when the short-circuited stubs is used for high-frequency
again, the transmission zeros are independent. Thus, only rejection and vice versa.
the performances of the structures will be dealt with. Fig. 23 2) Capabilities of a Structure Based on Short-Circuited
depicts the ideal transmission-line scheme involved here. Stubs at Low Frequencies: For this simulation, the input and
1) Synthesis: output parameters are summarized in Tables XV and XVI,
respectively. Fig. 24 illustrates the associated response.
(34) As the transmission zero is set at 0.8 GHz, the periodical
behavior of the stub implies that the upper transmission zero
(35) cannot exceed 1.6 GHz as previously mentioned for the struc-
ture based on two short-circuited stubs.
(36) 3) Capabilities of a Structure Based on Short-Circuited
Stubs at High Frequencies: Tables XVII and XVIII, re-
(37)
spectively, give the input and output parameters used in this
simulation. Fig. 25 illustrates the associated response.
(38)
In this case, as for the first mentioned structure based on two
open-circuited stubs, the transmission zeros can be shifted be-
(39) yond 1.6 GHz, but then the rejection between the two transmis-
sion zeros for a second-order filter becomes insufficient. The
This synthesis can be used for both cases by assuming that control of a wide rejected band needs more transmission zeros,
characterizes low-frequency zeros and high-frequency and thus a higher order filter.
QUENDO et al.: NARROW BANDPASS FILTERS USING DBRs BASED ON STEPPED-IMPEDANCE STUBS AND DIFFERENT-LENGTH STUBS
TABLE XVII
INPUT PARAMETERS OF THE SIMULATION
TABLE XVIII
OUTPUT PARAMETERS OF THE SIMULATION
Fig. 25. Simulated electrical response of a second-order DBR filter based upon
short-circuited stub at high frequencies.
IX. BENEFITS AND DRAWBACKS OF EACH STRUCTURE
We will first develop the general benefits and drawbacks of
DBRs, and then we will compare the structures.
The first important benefit of this topology is obviously the
possibility of placing independent transmission zeros at pre-
scribed frequencies. Indeed, when considering a given rejection
level, these transmission zeros result in a reduction of the filter
order and, therefore, reduce the losses of the whole structure.
Compared to the traditional coupled line topology, significant
improvements should be noted. In particular, the DBR and as-
sociated synthesis allow control of the bandwidth together with
two attenuated bands. Moreover, no additional tunability diffi-
culties are encountered thanks to the independence of the two
bandstop structures. Nevertheless, the main problem of this kind
of resonator is the harmonic response. Further studies should
focus on the integration of low-pass [13], [14] and high-pass
structures.
The DBR based on two open-circuited stubs is the most suited
for wide-band control, especially at high frequencies. Moreover,
its implementation is easier than the other ones. On the other
1043
hand, the DBR based on two short-circuited stubs is better when
a high rejection is required on both sides just near the bandpass.
Whenever a high rejection near the bandpass in the high
frequency and a wide rejected band in the low frequency are
both desired, the best DBR results from the association of one
short-circuited stub for high-frequency transmission zero with
an open-circuited stub for low-frequency transmission zeros.
The DBR based on one short-circuited stub for low-frequency
transmission zeros and open-circuited stub for high-frequency
transmission zeros is less proficient than the others are regard-
less of the criteria of rejection.
The three topologies with one or more short-circuited stubs
obviously reject the dc harmonic.
The DBR based on step impedance stubs is the worst case in
term of rejection, but it presents intrinsic freedom degrees. In-
deed, in the second design step, the structure lengths can be used
as freedom degrees for optimization purposes. Its performances
for rejection can be greatly improved. Moreover, these intrinsic
degrees of freedom can be used to minimize cross-junction dis-
continuities regardless of the technology in use.
Obviously, as the resonators are defined by their slope param-
eters, different DBRs can be used in a sole filter.
X. CONCLUSION
In this paper, we developed new syntheses for DBR filters.
The first one concerned stepped-impedance open-circuited
stubs and was based on a simplification which allowed us to
keep four physical parameters. This induced an independent
control of not only the central frequency and the bandwidth,
but also of the two transmission zeros of such a resonator
through analytical equations. Particular DBR cases designed
with stubs of different lengths were then presented, which
permitted specific frequency responses composed of the oper-
ating bandwidth and the lower and upper attenuated bands. We
then demonstrated that such resonators lead to very flexible
syntheses with independent control of the lower attenuated
band, the bandwidth, and the upper attenuated band. The
presented theoretical frequency responses highlight this notion
of independence. Finally, the design principles were verified
through experimental achievements in microstrip technology.
Some other structures combining short- and open-circuited
stubs were then also introduced to demonstrate the generaliza-
tion of the concept. In the end, benefits and drawbacks of the
different structures are discussed.
These investigations open the way to numerous perspectives.
Among them, one should mention first the development of novel
syntheses that take into account the coupling between different
stubs obtained within folded structures, and, second, the imple-
mentation of such topologies in multilayer technology. The use
of coupled-line admittance inverters to control spurious reso-
nance at low frequencies must be studied also.
REFERENCES
[1] I. Hunter, Theory and Design of Microwave Filters. London, U.K.: IEE
Press, 2000.
[2] C. Quendo, E. Rius, and C. Person, “Narrow bandpass filters using dual
behavior resonators,” IEEE Trans. Microwave Theory Tech., vol. 51, pp.
734–743, Mar. 2003.
1044 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 52, NO. 3, MARCH 2004
[3] J.-T. Kuo, M.-J. Maa, and P.-H. Lu, “A microstrip elliptic function
filter with compact miniaturized hairpin resonators,” IEEE Microwave
Guided Wave Lett., vol. 10, pp. 94–95, Mar. 2000.
[4] G. Machiarella and A. Bovatti, “Single-sided filters in microstrip tech-
nology,” in Proc. Eur. Microwave Conf., London, U.K., Sept. 2001, pp.
45–48.
[5] K. Wada and O. Hashimoto, “Fundamentals of open-ended resonators
and their application to microwave filters,” IEICE Trans. Electron., vol.
E83-C, no. 11, pp. 1763–1775, Nov. 2000.
[6] K. Wada, Y. Aihara, O. Hashimoto, and H. Harada, “An empirical study
of a coplanar bandpass filter with attenuation poles using short-ended
half-wavelength resonators,” IEICE Trans. Fundamentals, vol. E86-A,
no. 2, pp. 273–279, Feb. 2003.
[7] D. C.D. Canete Rebenaque, A. A.A. Alvarez Melcon, and M. Guglielmi,
“A new simple microstrip open-loop resonators filter for high selectivity
applications,” in IEEE MTT-S Int. Microwave Symp. Dig., Philadelphia,
PA, June 2003, pp. 1603–1606.
[8] R. Azadegan and K. Sarandi, “Miniaturized slot-line and folded-slot
bandpass filter,” in IEEE MTT-S Int. Microwave Symp. Dig., Philadel-
phia, PA, June 2003, pp. 1595–1598.
[9] S. Amari, G. Tadeson, J. Cihlar, and U. Rosenberg, “New parallel
(=2-microstrip line filters with transmission zeros at finite frequen-
cies,” in IEEE MTT-S Int. Microwave Symp. Dig., Philadelphia, PA,
June 2003, pp. 543–546.
[10] E. Goron, J. P. Coupez, C. Person, Y. Toutain, and H. Lattard,
“Accessing to UMTS filtering specifications using new microstrip
miniaturized loop-filters,” in IEEE MTT-S Int. Microwave Symp.
Dig., Philadelphia, PA, June 2003, pp. 1599–1602.
[11] P. Rizzi, Microwave Engineering, Passive Circuits. Englewood Cliffs,
NJ: Prentice-Hall, 1988, pp. 466–468.
[12] G. L. Matthaei, L. Young, and E. M. T. Jones, Microwave Filters,
Impedance-Matching Networks, and Coupling Structures. Dedham,
MA: Artech House, 1980, pp. 427–433.
[13] C. Quendo, E. Rius, C. Person, and M. Ney, “Integration of optimized
low-pass filters in a bandpass filter for out-of-band improvement,” IEEE
Trans. Microwave Theory Tech., vol. 49, pp. 2376–2383, Dec. 2001.
[14] E. Rius, C. Quendo, C. Person, A. Carlier, J. C. Cayrou, and J. L. Cazaux,
“High rejection C -band planar band-pass filter for a spatial application,”
in Proc. Eur. Microwave Conf., vol. 3, Munich, Germany, Oct. 2003, pp.
1055–1058.
Cédric Quendo was born in Plouay, France, on
September 15, 1974. He received the Ph.D. degree
in electronics from the University of Brest, Brest,
France, in 2001.
He currently conducts research with the Labo-
ratoire d’Electronique et Systèmes de Télécommu-
nication (LEST), University of Brest. His research
activities principally concern the modelization and
design of microwave passive devices for microwave
and millimeter-wave applications.
Eric Rius (M’02) was born in Auray, France, on
March 6, 1966. He received the Ph.D. degree in
electronics from the University of Brest, Brest,
France, in 1994.
Since 1995, he has been an Assistant Professor
with the Electronic Department, Université de
Bretagne Occidentale (UBO), Brest, France. He also
currently conducts research with the Laboratoire
d’Electronique et des Systèmes de Télécommu-
nication (LEST), Brest, France. His research
activities principally concern the design of filters
and associated RF modules for microwave and millimeter-wave applications.
Christian Person received the Ph.D. degree in elec-
tronics from the University of Brest, Brest, France in
1994.
Since 1991, he has been an Assistant Professor
with the Microwave Department, Ecole Nationale
Supérieure des Télécommunications de Bretagne,
Brest, France. He currently conducts research with
the Laboratoire d’Electronique et Systèmes de
Télécommunication (LEST), which concerns the de-
velopment of new technologies for millimeter-wave
applications and systems. His research activities
are especially focused on hybrid three-dimensional integration techniques
for implementing optimized passives functions (filter, antenna, and coupler)
and improving reliability and interconnection facilities with active monolithic
microwave integrated circuits.