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The thermal diffusivity of pure silicon has been measured from 300 to 1400 K. The speci6c heat of the
same material over the same temperature range has been measured by Dennison. The thermal conductivity
was obtained from the product of the thermal diffusivity, specific heat, and density. At 1400 K about two-
thirds of the thermal conductivity was caused by lattice vibrations and one-third by bipolar diffusion.
Wiedemann-Franz type diffusion accounted for less than one percent of the total thermal conductivity
at 1400'K. Thermal transport by direct transmission of radiation appeared to be negligible up to 2400'K.
The Gruneisen constant for silicon from these high-temperature thermal conductivity measurements was
1.96, if the Debye temperature is taken as 636'K.
Dallas, Texas.
' B. B. Kuprovsky and P. V. Gel'd, Fizika Metal. i Metalloved. ;".;:. ixLLLL&, ~iLLLLL& LXLLL&~
3, 182 (1956).
'R. G. Morris and J. J. Martin, Technical Report 6, ONR LxLLL~~ WxiL iiXLLLLL~~
Contract Nonr 2964 (01), 1962.
' B. Abeles, D. S. Beers, G. D. Cody, and J. P. Dismukes, Phys. THERMOCOUPLE WIRE
LO
0.8—
CP )
8 x Sl 1F
a stoic
Si 4A
~1 0. 6
CO
LL
9 Fio. 2. Thermal diffusivity of silicon
Ci from 300 to 1400'K.
~~ 0. 4
X
0. 2—
l.
0 t I I
X SAMPLE I F
0 SAMPLE 5C
o SAMPLE +A
I- L2
t I
400 $00 800 IR00 |400
TEMPERATURE |'K)
~ D.
H. Dennison, Institute for Atomic Research, Ames, Iowa
(private communication). ' R. G. Morris and J. G. Hust, Phys. Rev. 124, 1426 (1961).
A. Smakula and "A. D. Stuckes, Phil. Mag. 5, 84 (1960).
' F. A. Mauer and V.L.Sils, Phys. Rev. 99, 1744 (1955).
H. Bolz, Natl. Bur. Std. (U. S.) Report "A. I'. Joffe, Physics of Semiconductors (Academic Press Inc. ,
5837, Suppl. 1 to %'ADC Tech. Rept. 55-473 AD 155 555. New York, 1960), p. 284.
SHANKS, MAYCOCK, SI DLES, AND DANI ELSON
I I I
0.8—
I I I I I
200 600 800 IOOO I200
TEMPERATURE ( K)
can be evaluated from the known electrical properties carriers which can be obtained from our resistivities and
of silicon. the known carrier mobilities of pure silicon. The
resistivities of our samples up to 1000'K are shown in
&,= 2(k/e)'T{o+ (2o „o„/o) [(AE/2kT)+ 2 j'), (2) Fig. 5 and the resistivities may be extrapolated with
where 0 is Soltzmann's constant, e is the charge on an confidence up to 1400'K. The Wiedemann-Franz con-
electron, T is the absolute temperature, hE is the energy tribution was found to be completely negligib]e up to
gap, and o., a„, a.~ are the total, intrinsic electron, and 1000'K and only 1% of the total thermal conductivity
intrinsic hole electrical conductivities, respectively. at 1400'K.
The first term of Eq. (2) expresses the Wiedemann- The second term in Eq. (2) represents the bipolar
Franz law which gives the unipolar contribution to the contribution to the thermal conductivity owing to the
thermal conductivity owing to transport of kinetic formation and annihilation of electron hole pairs as they
energy by diffusion of charge carriers. The magnitude diffuse down the temperature gradient. We shall not
of this contribution depends upon the number of charge attempt to distinguish between complete separation
of the electron-hole pairs (bipolar diffusion) and in-
TAsr. z IV. Electronic contribution to thermal conductivity. complete separation (exciton diffusion). It should be
pointed out that all the excitons are probably ionized
Electronic thermal at temperatures above 1000'K, since the exciton binding
Temperature conductivity energy in silicon is very small. Excitons should, there-
('K) (W/cm-'K}
fore, have no appreciable effect on the thermal con-
600 0.0000 ductivity of silicon at high temperatures. This bipolar
700 0.0017
800 0.0060 diffusion is clearly a very eScient mechanism for the
900 0.0134 transport of heat, and may contribute signi6cantly for
1000 0.0241
1100 0.0385 a relatively small number of electron-hole pairs. Calcu-
1200 0.0540 lations showed that for pure silicon the effect would be
1300 0.0702
1400 0.0866 barely noticeable at 1000'K, but might represent nearly
one-third of the total thermal conductivity at ].400'K. .
TH E RMAL CON DUCT I VI T Y OF Si F ROM 300 TO 1400'K 1747
2.4-
thermal conductivity as given by Eq. (2) is shown in cn
Eh r
/! 0
Table IV. 0
r 0 0
Q
I.B— r 0
// 0
PHONON THERMAL CONDUCTIVITY r 0
where A is the gram-atomic weight. , is Avogadro's S FIG. 6. Residual thermal resistivity of silicon after the electronic
contribution to the thermal conductivity has been subtracted from
number, P is the volume per atom, 8 is the Debye the total thermal conductivity. The linear dependence on tempera-
temperature, and y is the Gruneisen constant. ture well above the Debye temperature (636'K) indicates that
We note that the lattice thermal resistivity, 1/E„ thermal conductivity by radiation was negligible compared to
thermal conductivity by lattice vibrations, Eg.
varies directly as the temperature. The radiation
thermal resistance, 1/E„, on the other hand, varies as
T ' according to Genzel. If we subtract the values in "
Table IV from the values in Table III, we obtain values
l'K)
TEMPERATURE
for E,+E„.The reciprocal of these values is plotted in
. IOOO 850 500 400 300
1
I
I Fig. 6. At temperatures well above the Debye tempera-
ture (about 636'K) the thermal resistivity 1/(E, +E,)
X SAMPLE
o
I f varies linearly with temperature. There is no evidence
3G
of a T ' dependence, as would. be expected if E„were
SAMPLE
'0 SAMPLE 4A