QM3056M6

N-Ch 30V Fast Switching MOSFETs

General Description Product Summery

The QM3056M6 is the highest performance

trench N-ch MOSFETs with extreme high cell BVDSS RDSON ID
density , which provide excellent RDSON and 30V 4.2 mΩ 103A
gate charge for most of the synchronous buck
converter applications .
Applications
The QM3056M6 meet the RoHS and Green
Product requirement , 100% EAS guaranteed  High Frequency Point-of-Load Synchronous
with full function reliability approved. Buck Converter for MB/NB/UMPC/VGA
 Networking DC-DC Power System
Features  Load Switch

 Advanced high cell density Trench technology PRPAK5X6 Pin Configuration

 Super Low Gate Charge
 Excellent CdV/dt effect decline Fig.12 Unclamped Inductive Switchin
 100% EAS Guaranteed
 Green Device Available

G
Absolute Maximum Ratings S SS

Symbol Parameter Rating Units

VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
1,7
ID@TC=25℃ Continuous Drain Current, VGS @ 10V 103 A
1
ID@TC=100℃ Continuous Drain Current, VGS @ 10V 65 A
1
ID@TA=25℃ Continuous Drain Current, VGS @ 10V 17.6 A
1
ID@TA=70℃ Continuous Drain Current, VGS @ 10V 14 A
2
IDM Pulsed Drain Current 180 A
3
EAS Single Pulse Avalanche Energy 136 mJ
IAS Avalanche Current 52 A
4
PD@TC=25℃ Total Power Dissipation 70 W
4
PD@TA=25℃ Total Power Dissipation 2 W
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data

Symbol Parameter Typ. Max. Unit

1
RθJA Thermal Resistance Junction-Ambient --- 62 ℃/W
1
RθJC Thermal Resistance Junction-Case --- 1.8 ℃/W

Rev A.01 D101712

1
 QM3056M6
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol Parameter Conditions Min. Typ. Max. Unit

BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 35 --- V
△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.015 --- V/℃

2 VGS=10V , ID=30A --- 3.4 4.2

RDS(ON) Static Drain-Source On-Resistance m
VGS=4.5V , ID=15A --- 5.0 6.2
VGS(th) Gate Threshold Voltage 1.2 1.5 2.5 V
VGS=VDS , ID =250uA
△VGS(th) VGS(th) Temperature Coefficient --- -3.8 --- mV/℃
VDS=24V , VGS=0V , TJ=25℃ --- --- 1
IDSS Drain-Source Leakage Current uA
VDS=24V , VGS=0V , TJ=55℃ --- --- 5
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=30A --- 49 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.8 4.2 
Qg Total Gate Charge (4.5V) --- 13.5 19
Qgs Gate-Source Charge VDS=15V , VGS=4.5V , ID=15A --- 4.4 6.2 nC
Qgd Gate-Drain Charge --- 4.3 6
Td(on) Turn-On Delay Time --- 7.2 14.5
Tr Rise Time VDD=15V , VGS=10V , RG=3.3 --- 22 40
ns
Td(off) Turn-Off Delay Time ID=15A --- 40 80
Tf Fall Time --- 22 45
Ciss Input Capacitance --- 1390 1945
Coss Output Capacitance VDS=15V , VGS=0V , f=1MHz --- 392 550 pF
Crss Reverse Transfer Capacitance --- 170 238

Guaranteed Avalanche Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

5
EAS Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=30A 45 --- --- mJ

Diode Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

1,6
IS Continuous Source Current --- --- 103 A
2,6
VG=VD=0V , Force Current
ISM Pulsed Source Current --- --- 180 A
2
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V
trr Reverse Recovery Time --- --- --- nS
Qrr Reverse Recovery Charge IF=30A , dI/dt=100A/µs , TJ=25℃ --- --- --- nC
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is V DD=25V,VGS=10V,L=0.1mH,IAS=52A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
7.Package limitation current is 85A.

2
 QM3056M6
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics

Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source

Voltage

Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics

diode

Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

3
 QM3056M6
N-Ch 30V Fast Switching MOSFETs

Fig.7 Capacitance Fig.8 Safe Operating Area

1
Normalized Thermal Response (RθJC)

DUTY=0.5

0.2

0.1
0.1

0.05 P DM T ON
0.02
T
0.01
D = TON/T
SINGLE
TJpeak = TC+P DMXRθJC

0.01
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)

Fig.9 Normalized Maximum Transient Thermal Impedance

VDS
90%

10%
VGS
Td(on) Tr Td(off) Tf

Ton Toff

Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform

D
4
 QM3056M6
N-Ch 30V Fast Switching MOSFETs

Fig.12 Unclamped Inductive Switching Test Circuit & Waveforms