TTK2837

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

TTK2837
Switching Regulator Applications
Unit: mm

Ф3.2 ± 0.2
• Low drain-source on-resistance: RDS(ON) = 0.22 Ω (typ.) 15.9 MAX.

• High forward transfer admittance: |Yfs| = 8.5 S (typ.)

4.5
2.0

1.0
• Low leakage current: IDSS = 10 µA (VDS = 500 V)

20.0 ± 0.3
• Enhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA)

3.3 MAX.

2.0

9.0
20.5 ± 0.5
2.0 ± 0.3
Absolute Maximum Ratings (Ta = 25°C)
1.0 ＋0.3
−0.25
Characteristics Symbol Rating Unit
5.45 ± 0.2 5.45 ± 0.2
Drain-source voltage VDSS 500 V

4.8 MAX.
＋0.3
0.6 −0.1
1.8 MAX.
Gate-source voltage VGSS ±30 V
DC (Note 1) ID 20
1 2 3

2.8
Drain current Pulse (t = 1 ms) A
IDP 80
(Note 1) 1. Gate
2. Drain(heat sink)
Drain power dissipation (Tc = 25°C) PD 280 W 3. Source
Single pulse avalanche energy
(Note 2)
EAS 470 mJ JEDEC ⎯

Avalanche current IAR 20 A JEITA SC-65

Repetitive avalanche energy (Note 3) EAR 28 mJ TOSHIBA 2-16C1B
Channel temperature Tch 150 °C Weight : 4.6 g (typ.)
Storage temperature range Tstg −55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
2
Characteristics Symbol Max Unit

Thermal resistance, channel to case Rth(ch-c) 0.466 °C/W

Thermal resistance, channel to ambient Rth(ch-a) 50 °C/W

1
Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: VDD = 90 V, Tch = 25°C (initial), L = 2.0 mH, RG = 25 Ω, IAR = 20 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

3
This transistor is an electrostatic-sensitive device. Handle with care.

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 TTK2837
Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±30 V, VDS = 0 V ⎯ ⎯ ±1 µA

Drain cut-off current IDSS VDS = 500 V, VGS = 0 V ⎯ ⎯ 10 µA
Drain-source breakdown voltage V(BR)DSS ID = 10 mA, VGS = 0 V 500 ⎯ ⎯ V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.5 ⎯ 3.0 V
Drain-source on-resistance RDS(ON) VGS = 10 V, ID = 10 A ― 0.22 0.27 Ω
Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 10 A 2.4 8.5 ― S
Input capacitance Ciss ⎯ 2500 ⎯
Reverse transfer capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 17 ⎯ pF

Output capacitance Coss ⎯ 290 ⎯

Rise time tr 10 V ID = 10 A VOUT ⎯ 50 ⎯

VGS
0V
Turn-on time ton
RL= 20 Ω
⎯ 95 ⎯
Switching time 10 Ω ns
Fall time tf ⎯ 67 ⎯
VDD ≈ 400 V
Turn-off time toff ⎯ 300 ⎯
Duty ≤ 1%, tw = 10 µs
Total gate charge Qg ⎯ 55 ⎯
Gate-source charge Qgs VDD ≈ 400 V, VGS = 10 V, ID = 20 A ⎯ 19 ⎯ nC

Gate-drain charge Qgd ⎯ 17 ⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current

IDR ⎯ ⎯ ⎯ 20 A
(Note 1)
Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 80 A
Forward voltage (diode) VDSF IDR = 20 A, VGS = 0 V ⎯ ⎯ −1.7 V
Reverse recovery time trr IDR = 20 A, VGS = 0 V, ⎯ 1700 ⎯ ns
Reverse recovery charge Qrr dIDR/dt = 100 A/µs ⎯ 26 ⎯ µC

Marking

Note 4: A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
TOSHIBA Part No.
(or abbreviation code)
Please contact your TOSHIBA sales representative for details as to
TTK2837
environmental matters such as the RoHS compatibility of Product.
Lot No.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
Note 4
hazardous substances in electrical and electronic equipment.

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 TTK2837

ID – VDS ID – VDS
20 50
Common source 10 10 Common source
6 8
Ta = 25°C Ta = 25°C
8
Pulse Test Pulse Test
16 5 40
6
(A)

(A)
ID

ID
12 30

5.5
Drain current

Drain current
4.5
8 20

4 10
VGS = 4 V
4.5

VGS = 4 V
0 0
0 2 4 6 8 10 0 10 20 30 40 50

Drain-source voltage VDS (V) Drain-source voltage VDS (V)

ID – VGS VDS – VGS

50 10
Common source Common source
VDS = 20 V Ta = 25°C
Pulse Test Pulse Test
(V)

40 8
ID (A)

VDS

30 6
Drain-source voltage

ID = 20 A
Drain current

20 4

25
10
10 100 2
Ta = −55 °C 5

0 0
0 2 4 6 8 10 0 4 8 12 16 20

Gate-source voltage VGS (V) Gate-source voltage VGS (V)

|Yfs| – ID RDS(ON) – ID
100 1
Common source
Common source
Forward transfer admittance ⎪Yfs⎪ (S)

VDS = 10 V
VGS = 10 V
Pulse Test
Ta = 25°C
Pulse Test
Drain-source on-resistance

10 Ta = −55 °C
RDS(ON) (Ω)

25

100

0.1 0.1
0.1 1 10 100 0.1 1 10 100

Drain current ID (A) Drain current ID (A)

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 TTK2837

RDS(ON) − Ta IDR − VDS

1 100
Common source Common source
VGS = 10 V Ta = 25°C
Pulse Test Pulse Test

Drain reverse current IDR (A)

0.8
Drain-source on-resistance

10
RDS(ON) (Ω)

0.6
20
10
0.4 10
ID = 5 A
1 5

0.2 3

1 VGS = 0 V
0 0.1
−80 −40 0 40 80 120 160 0 −0.3 −0.6 −0.9 −1.2 −1.5

Ambient temperature Ta (°C) Drain-source voltage VDS (V)

Capacitance – VDS Vth − Ta

10000 5
Common source
VDS = 10 V
Ciss
ID = 1mA
Vth (V)

Pulse Test
4
1000
(pF)

Coss
Gate threshold voltage

3
Capacitance C

100

10
Common source Crss
1
VGS = 0 V
f =1MHz
Ta = 25°C
1 0
0.1 1 10 100 −80 −40 0 40 80 120 160

Drain-source voltage VDS (V) Ambient temperature Ta (°C)

Dynamic input/output
PD − Tc characteristics
400 500 20

VDS
Drain power dissipation PD (W)

(V)

VGS (V)

400 16
300
VDS

300 12
Drain-source voltage

200
Gate-source voltage

200
VDD = 100 V
200 400 8
VGS

100 Common source

100 ID = 20 A 4
Ta = 25°C
Pulse Test

0 0 0
0 40 80 120 160 0 10 20 30 40 50 60

Case temperature Tc (°C) Total gate charge Qg (nC)

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 TTK2837

rth – tw
10

Normalized transient thermal impedance

1
Duty = 0.5
rth/Rth(ch-c)

0.2

0.1 PDM
Single pulse
0.1
0.05 t
0.02
T

Duty = t/T
0.01
Rth(ch-c) = 0.446 °C/W
0.01
10µ 100µ 1m 10m 100m 1 10

Pulse width tw (s)

Safe operating area EAS – Tch

100 500
ID max (pulse) *
100 µs *
Avalanche energy EAS (mJ)

400
ID max (continuous) 1 ms *
10

300
Drain current ID (A)

1
DC operation 200
Ta = 25°C

100
0.1

0
25 50 75 100 125 150
0.01
* Single pulse Ta = 25°C Channel temperature (initial) Tch (°C)
Curves must be derated
linearly with increase in
VDSS max
temperature.
0.001
1 10 100 1000 BVDSS
15 V
Drain-source voltage VDS (V)
IAR
−15 V
VDD VDS

Test circuit Wave form

RG = 25 Ω 1 ⎛ B VDSS ⎞
Ε AS = ⋅ L ⋅ I2 ⋅ ⎜ ⎟
VDD = 90 V, L = 2.0 mH 2 ⎜B − V ⎟
⎝ VDSS DD ⎠

5
 TTK2837
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• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.