1)

Race around occurs is toggle mode. In SR we don’t have toggle mode. Here we
have forbidden condition. Toggle mode is present in J-K and T- flip-flop.
So, race around occurs only in JK or T.
The forbidden condition of SR latch says that once u have entered in forbidden
state then there is a possibility that u will go to metastability before reaching to
memory state.
2)
Frequency of an astable multi-vibrator or odd number of inverter chain is
𝟏
(𝟐∗𝑵∗𝒕𝒑𝒅 )

3)
In open collector TTL gates wired AND gate is possible.

4)
MOD 3 means there are 3 distinct states in the counter.
One flipflop can give you 2 distinct states.
5)
FOM-Figure Of Merit for logic families
𝒂𝒗𝒆𝒓𝒂𝒈𝒆 𝒑𝒓𝒐𝒑𝒂𝒈𝒂𝒕𝒊𝒐𝒏 𝒅𝒆𝒍𝒂𝒚 × 𝒂𝒗𝒆𝒓𝒂𝒈𝒆 𝒑𝒐𝒘𝒆𝒓
6)
Number of comparators required in an N bit Flash type ADC
𝟐𝑵 − 𝟏
Random access memory
Is accessed with an address.
The term “random access” means that in an array of memory cells each cell can be
read or written in any order, no matter which cell was last accessed.
Here latency is independent of the address.
Random access memory are also called read/wright memory.

Serial access memories Are accessed sequentially so no address is necessary.

Content addressable memories determine which address/addresses contain data

that matches a specified key.
Volatile memory(RAM) retains data as long as power is applied.
Non-Volatile(ROM) memory will hold data indefinitely.
VOLATILE MEMORY(RAM)
Static ram
Use of feedback to maintain their
state.
Static ram is faster that dynamic ram.
Static ram requires more area per bit.
Dynamic ram
Use charge stored on floating
capacitor through an access capacitor.
Dynamic ram is slower than their static
ram.
Dynamic ram requires less area per bit.

NON-VOLATILE(ROM)
1)
Some non-volatile memories are read-only(mask-ROM), but not all.
Contents of masked ROM are hardwired during fabrication and thus can’t be
changed.
2)
Programmable ROM:- Can be programmed once after fabrication is done. By
blowing on-chip fuses with a special high programming voltage.
3)
Erasable programmable ROM:- Is programmed by storing charge on a floating gate.
Can be erased by exposure of gate charge to UV light.
EPROM can be re-programmed.
4)
Electrically erasable programmable ROM:- are similar to EPROM but can be erased
within second’s using on-chip circuitry.
Flash memories are a variant of EEPROM that erases entire blocks rather that bit.
ADC and DAC

Analog to digital

1. Counter type
2. Successive approximation type
3. Flash type

Digital to analog

1. R-2R Ladder
2. Binary weighted ladder

Counters

Asynchronous Synchronous