BJT AC Analysis

BJT AC Analysis
BJT Transistor Modeling

• A model is an equivalent circuit that represents the AC
characteristics of the transistor.
• A model uses circuit elements that approximate the

behavior of the transistor.
• There are two models commonly used in small signal AC

analysis of a transistor:
– re model
– Hybrid equivalent model
Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
The re Transistor Model
• BJTs are basically current-controlled devices; therefore the re model

uses a diode and a current source to duplicate the behavior of the
transistor.
• One disadvantage to this model is its sensitivity to the DC level. This

model is designed for specific circuit conditions.
Common-Base Configuration
26 mV
I c = αI e re =
Ie
Input impedance:
Zi= r e
Output impedance:
Z o≃∞ Ω
Voltage gain:
αR L R L
AV = ≃
re re
Current gain:
Ai = − α≃− 1
Common-Emitter Configuration
The diode re model can be

replaced by the resistor re.
I e= (β+ 1 )I b≃βI b
26 mV
re =
Ie
more…
Common-Emitter Configuration
Input impedance:
Z i = βr e
Output impedance:
Z o= r o≃∞ Ω
Voltage gain:
RL
AV = −
re
Current gain:A = β∣
i r o= ∞
Common-Collector Configuration
Input impedance:
Z i = ( β+ 1 )r e
Output impedance:
Z o= r e∣∣ R E
Voltage gain:
RE
AV =
R E+ r e
Current gain:
Ai = β + 1
The Hybrid Equivalent Model
The following hybrid parameters are developed and used
for modeling the transistor. These parameters can be found
on the specification sheet for a transistor.
• hi = input resistance
• hr = reverse transfer voltage ratio (Vi/Vo)  0
• hf = forward transfer current ratio (Io/Ii)
• ho = output conductance
Simplified General h-Parameter Model
• hi = input resistance
• hf = forward transfer current ratio (Io/Ii)
re vs. h-Parameter Model
Common-Emitter
hie = βr e
h fe= β ac
Common-Base
hib = r e
h fb = − α≃− 1
The Hybrid  Model
The hybrid  model is most useful for analysis of high-
frequency transistor applications.
At lower frequencies the hybrid  model closely
approximate the re parameters, and can be replaced by
them.
Common-Emitter Fixed-Bias Configuration
• The input is applied to the base

• The output is from the collector
• High input impedance
• Low output impedance
• High voltage and current gain
• Phase shift between input and
output is 180
Common-Emitter Fixed-Bias Configuration
AC equivalent
re model
Common-Emitter Fixed-Bias Calculations
Input impedance:
Z i = R B ∣∣ βr e
Z i ≃ βr e∣R ≥ 10 βr
E e
Output impedance:
Z o = RC ∣∣r O
Z o ≃ RC ∣r ≥ 10 R
o C
Voltage gain: Current gain:

Vo ( R ∣∣r )
Av= =− C o I o βR B r o
Vi re Ai = =
RC I i (r o + R C )( R B+ βr e )
Av= − ∣ Ai ≃ β∣r ≥ 10R , R ≥ 10 βr
r e r o ≥ 10RC o C B e
Current gain from voltage gain:

Zi
Ai = − A v
RC
Common-Emitter Voltage-Divider Bias
re model requires you to determine , re, and ro.
Common-Emitter Voltage-Divider Bias
Calculations
Input impedance:
R' = R 1∣∣ R 2
Z i = R '∣∣ βr e
Output impedance:
Z o = RC ∣∣r o Current gain:

'
Z o ≃ RC ∣r ≥ 10R Io β R ro
Ai = =
o C
I i ( r o + R C )( R' + βr e )
Voltage gain: I o β R'
Ai = ≃ ' ∣r ≥ 10R ¿
I i R + βr e o C
V o − RC∣∣r o
Av= = I '
V i re Ai = o ¿β∣r ≥ 10R , { R≥ 10 βr e
Ii o C
V R
A v = o ≃− C ∣r ≥ 10R
Vi re o C Current gain from voltage gain:
Zi
Ai = − A v
RC
Common-Emitter Emitter-Bias
Configuration
Impedance Calculations
Input impedance:
Z i = R B∣∣ Z b
Z b = βr e + ( β + 1) R E
Z b≃ β ( re + R E )
Z b ≃ βR E
Output impedance:
Z o= RC
Gain Calculations
Voltage gain:
Vo βRC
Av= =−
Vi Zb
V R
Av= o = − C ∣
Vi r e + R E Z b= β( r e + R E )
Vo RC
Av = ¿− ∣
Vi R E Z b ≃βR E
Current gain: Current gain from voltage gain:

Io βR B Zi
Ai = = Ai = − A v
I i RB + Zb RC
Emitter-Follower Configuration
• This is also known as the common-collector configuration.

• The input is applied to the base and the output is taken from the
emitter.
• There is no phase shift between input and output.
Impedance Calculations
Input impedance:
Z i = R B∣∣ Z b
Z b = βr e + ( β + 1) R E
Z b≃ β ( re + R E )
Z b ≃ βR E
Output impedance:
Z o = R E ∣∣r e
Z o ≃r e∣R >> r
E e
Gain Calculations
Voltage gain:
V o RE
Av= =
Vi R E+ r e
V
A v = o ≃1∣ R >> r , R + r ≃ R
Vi E e E e E
Current gain:
βR B
Ai ≃−
R B+ Z b
Current gain from voltage gain:

Z
Ai = − A v i
RE
• The input is applied to the

emitter.
• The output is taken from the
collector.
• Low input impedance.
• High output impedance.
• Current gain less than unity.
• Very high voltage gain.
• No phase shift between input
and output.
Calculations
Input impedance:
Z i = R E∣∣r e
Output impedance:
Z o= RC
Voltage gain:
V o αR C R C
Av= = ≃
Vi re re
Current gain:
Io
Ai = = − α ≃− 1
Ii
Common-Emitter Collector Feedback
Configuration
• This is a variation of the common-emitter fixed-bias configuration

• Input is applied to the base
• Output is taken from the collector
• There is a 180 phase shift between input and output
Calculations
Input impedance:
re
Zi=
1 RC
+
β RF
Output impedance:
Z o≃RC ∣∣ R F
Voltage gain:
Vo R
Av= =− C
Vi re
Current gain:
I o βR F
Ai = =
Ii R F + βR C
I R
Ai = o ≃ F
Ii RC
Collector DC Feedback Configuration
• This is a variation of the
common-emitter, fixed-bias
configuration
• The input is applied to the base
• The output is taken from the
collector
• There is a 180 phase shift
between input and output
Calculations
Input impedance:
re
Zi=
1 RC
+
β RF
Output impedance:
Z o≃RC ∣∣ R F
Voltage gain: Current gain:

Vo R I o βR F
Av= =− C Ai = =
Vi re Ii R F + βR C
I R
Ai = o ≃ F
Ii RC
Two-Port Systems Approach
This approach:
• Reduces a circuit to a two-port system
• Provides a “Thévenin look” at the output terminals
• Makes it easier to determine the effects of a changing load
With Vi set to 0 V:
Z Th= Z o= R o
The voltage across

the open terminals is:
E Th= A vNL V i
where AvNL is the

no-load voltage
gain.
Effect of Load Impedance on Gain
This model can be applied to

any current- or voltage-
controlled amplifier.
Adding a load reduces the

gain of the amplifier:
Vo RL
Av= = A
V i R L + R o vNL
Zi
Ai = − A v
RL
Effect of Source Impedance on Gain
The fraction of
applied signal that
reaches the input of
the amplifier is:
Ri V s
V i=
Ri+ Rs
The internal resistance of the signal source reduces the

overall gain:
Vo Ri
A vs= = A
V s Ri + R s vNL
Combined Effects of RS and RL on Voltage
Gain
Effects of RL:
V o R L A vNL
Av= =
V i R L+ R o
R
Ai = − A v i
RL
Effects of RL and RS:

V o Ri RL
A vs= = A
V s Ri + R s R L + R o vNL
R + Ri
Ais = − A vs s
RL
Cascaded Systems
• The output of one amplifier is the input to the next amplifier

• The overall voltage gain is determined by the product of gains of the
individual stages
• The DC bias circuits are isolated from each other by the coupling
capacitors
• The DC calculations are independent of the cascading
• The AC calculations for gain and impedance are interdependent
R-C Coupled BJT Amplifiers
Input impedance, first stage:

Z i = R 1∣∣ R 2∣∣ βre
Output impedance, second stage:

Z o= RC
Voltage gain:
R C∣∣ R 1∣∣ R 2∣∣ βr e
A v1=
re
R
AV2 = C
re
A v = A v1 A v2
Cascode Connection
This example is a CE–CB

combination. This arrangement
provides high input impedance
but a low voltage gain.
The low voltage gain of the

input stage reduces the Miller
input capacitance, making this
combination suitable for high-
frequency applications.
Darlington Connection
The Darlington circuit provides a very high

current gain—the product of the individual
current gains:
 D =  12
The practical significance is that the circuit
provides a very high input impedance.
DC Bias of Darlington Circuits
Base current:
V CC − V BE
I B=
R B+ β D R E
Emitter current:
I E = ( β D+ 1) I B≃ β D I B
Emitter voltage:
V E= I E R E
Base voltage:
V B= V E+ V BE
Feedback Pair
This is a two-transistor circuit that operates like a

Darlington pair, but it is not a Darlington pair.
It has similar characteristics:

• High current gain
• Voltage gain near unity
• Low output impedance
• High input impedance
The difference is that a Darlington

uses a pair of like transistors,
whereas the feedback-pair
configuration uses complementary
transistors.
Current Mirror Circuits
Current mirror circuits

provide constant current
in integrated circuits.
Current Source Circuits
Constant-current sources can be built using FETs, BJTs, and
combinations of these devices.
IE  IC
V − V
I ≃ I E=
Z BE
RE
more…
Current Source Circuits
VGS = 0V
ID = IDSS = 10 mA
Fixed-Bias Configuration
Input impedance:
Z i = R B∣∣hie
Output impedance:
Z o= RC ∣∣1/h oe
Voltage gain:
Vo h fe (R C∣∣1 / ho e )
Av= =−
Vi hie
Current gain:
Io
Ai = ≃h fe Z i = R B∣∣hie
Ii
Voltage-Divider Configuration
Input impedance:
Z i = R '∣∣ hie
Output impedance:
Z o≃RC
Voltage gain:
h fe (R C∣∣1/h oe )
Av= −
h ie
Current gain:
hfe R'
Ai = − '
R + hie
Emitter-Follower Configuration
Input impedance:
Z b = h fe R E
Z i = R o∣∣ Z b
Z b = h fe R E
Output impedance:
Z i = R o∣∣ Z b
hie
Z o ≃ R E ∣∣
h fe
Voltage gain:
Vo RE
Av= =
V i R E + hie / hfe
Current gain:
h fe R B
Ai =
R B+ Z b
Zi
Ai = − A v
RE
Input impedance:
Z i = R E∣∣h ib
Output impedance:
Z o= RC
Voltage gain:
Vo h R
Av= = − fb C
Vi h ib
Current gain:
Io
Ai = = h fb≃− 1
Ii
Troubleshooting
Check the DC bias voltages
 If not correct, check power supply, resistors, transistor.

Also check the coupling capacitor between amplifier
stages.
Check the AC voltages
 If not correct check transistor, capacitors and the

loading effect of the next stage.

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BJT Transistor Modeling

• A model uses circuit elements that approximate the

• There are two models commonly used in small signal AC

• BJTs are basically current-controlled devices; therefore the re model

• One disadvantage to this model is its sensitivity to the DC level. This

The diode re model can be

• The input is applied to the base

Voltage gain: Current gain:

Current gain from voltage gain:

re model requires you to determine , re, and ro.

Z o = RC ∣∣r o Current gain:

Current gain: Current gain from voltage gain:

• This is also known as the common-collector configuration.

Current gain from voltage gain:

• The input is applied to the

• This is a variation of the common-emitter fixed-bias configuration

Voltage gain: Current gain:

The voltage across

where AvNL is the

This model can be applied to

Adding a load reduces the

The internal resistance of the signal source reduces the

Effects of RL and RS:

• The output of one amplifier is the input to the next amplifier

Input impedance, first stage:

Output impedance, second stage:

This example is a CE–CB

The low voltage gain of the

The Darlington circuit provides a very high

This is a two-transistor circuit that operates like a

It has similar characteristics:

The difference is that a Darlington

Current mirror circuits

 If not correct, check power supply, resistors, transistor.

Check the AC voltages

 If not correct check transistor, capacitors and the

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