TP0610T

P-Channel Enhancement-Mode
Vertical DMOS FETs

Ordering Information
BVDSS / RDS(ON) ID(ON) Order Number/Package Product marking for SOT-23:
BVDGS (max) (min) TO-236AB* T50❋
-60V 10Ω -50mA TP0610T where ❋ = 2-week alpha date code

*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

Features Advanced DMOS Technology

❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
❏ Low power drive requirement manufacturing process. This combination produces devices with
❏ Ease of paralleling the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
❏ Low CISS and fast switching speeds ent in MOS devices. Characteristic of all MOS structures, these
❏ Excellent thermal stability devices are free from thermal runaway and thermally-induced
secondary breakdown.
❏ Integral Source-Drain diode
Supertex’s vertical DMOS FETs are ideally suited to a wide range
❏ High input impedance and high gain of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
❏ Complementary N- and P-channel devices
switching speeds are desired.

Applications Package Option

❏ Logic level interfaces – ideal for TTL and CMOS
❏ Solid state relays
❏ Battery operated systems
❏ Photo voltaic drives
Drain
❏ Analog switches
❏ General purpose line drivers
❏ Telecom switches

Absolute Maximum Ratings Gate Source

Drain-to-Source Voltage BVDSS
TO-236AB
Drain-to-Gate Voltage BVDGS
(SOT-23)
Gate-to-Source Voltage ± 20V
top view
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
Note: See Package Outline section for dimensions.
* Distance of 1.6 mm from case for 10 seconds.

11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
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 TP0610T

Thermal Characteristics
Package ID (continuous)* ID (pulsed) Power Dissipation θjc θja IDR* IDRM
@ TA = 25°C °C/W °C/W
SOT-23 -120mA -400mA 0.36W 200 350 -120mA -400mA
* ID (continuous) is limited by max rated Tj.

Electrical Characteristics (@ 25°C unless otherwise specified)

Symbol Parameter Min Typ Max Unit Conditions
BVDSS Drain-to-Source Breakdown Voltage -60 V VGS = 0V, ID = -10µA
VGS(th) Gate Threshold Voltage -1.0 -2.4 V VGS = VDS, ID = -1.0mA
∆V GS(th) Change in VGS(th) with Temperature 6.5 mV/°C VGS = VDS, ID = -1.0mA
IGSS Gate Body Leakage ±10 nA VGS = ±20V, VDS = 0V
IDSS Zero Gate Voltage Drain Current -1 µA VGS = 0V, VDS = Max Rating
-200 µA VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON) ON-State Drain Current -50 mA VGS = -4.5V, VDS = -10V
RDS(ON) Static Drain-to-Source 25 Ω VGS = -4.5V, ID = -25mA
ON-State Resistance
10 Ω VGS = -10V, ID = -0.2A
∆RDS(ON) Change in RDS(ON) with Temperature 1.0 %/°C VGS = -10V, ID = -0.2A
Ω
GFS Forward Transconductance 60 m VDS = -10V, ID = -0.1A
CISS Input Capacitance 60
VGS = 0V, VDS = -25V
COSS Common Source Output Capacitance 30 pF
f = 1 MHz
CRSS Reverse Transfer Capacitance 10
td(ON) Turn-ON Delay Time 10
VDD = -25V
tr Rise Time 15
ns ID = -0.18A
td(OFF) Turn-OFF Delay Time 15
RGEN = 25Ω
tf Fall Time 20
VSD Diode Forward Voltage Drop -2.0 V VGS = 0V, ISD = -0.12A
trr Reverse Recovery Time 400 ns VGS = 0V, ISD = -0.4A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.

Switching Waveforms and Test Circuit

0V
10% PULSE
INPUT GENERATOR

-10V 90%
Rgen
t(ON) t(OFF)

td(ON) tr td(OFF) tF D.U.T.

0V OUTPUT
INPUT
90% 90%
OUTPUT RL

VDD 10% 10%

VDD

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 TP0610T

Typical Performance Curves

Output Characteristics Saturation Characteristics
-2.0 -2.0

VGS = -10V
-1.6 -1.6
ID (amperes)

ID (amperes)
-1.2 -1.2
-8V
VGS = -10V

-8V
-0.8 -0.8
-6V
-6V
-0.4 -0.4
-4V
-4V
-3V -3V
0 0
0 -10 -20 -30 -40 -50 0 -2 -4 -6 -8 -10
VDS (volts) VDS (volts)

Transconductance vs. Drain Current Power Dissipation vs. Temperature

0.5 0.5

0.4 0.4
SOT-23
GFS (siemens)

TA = -55°C
0.3 0.3
PD (watts)

25°C
0.2 0.2

125°C
0.1 0.1

0 0
0 -0.2 -0.4 -0.6 -0.8 -1.0 0 25 50 75 100 125 150
ID (amperes) TA (°C)

Maximum Rated Safe Operating Area Thermal Response Characteristics

-1.0 1.0
SOT-23 (pulsed)
Thermal Resistance (normalized)

0.8
SOT-23 (DC)

-0.1
ID (amperes)

0.6

TA = 25°C 0.4
-0.01

SOT-23
0.2
TA = 25°C
PD = 0.36W
-0.001 0
-0.1 -1.0 -10 -100 0.001 0.01 0.1 1.0 10
VDS (volts) tp (seconds)

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 TP0610T

Typical Performance Curves

BVDSS Variation with Temperature On-Resistance vs. Drain Current
1.1 20

VGS = -4.5V
16
BVDSS (normalized)

RDS(ON) (ohms)
12

1.0 VGS = -10V

8

0.9 0
-50 0 50 100 150 0 -0.4 -0.8 -1.2 -1.6 -2.0
Tj (°C) ID (amperes)

Transfer Characteristics VGS(th) and RDS(ON) Variation with Temperature

-2.0 1.2

1.6
VDS = -25V
RDS(ON) @ -10V, -0.5A
-1.6 1.1
TA = -55°C

RDS(ON) (normalized)
VGS(th) (normalized)

1.4
ID (amperes)

-1.2 1.0
VGS(th) @ -1mA
1.2

-0.8 25°C 0.9

1.0
125°C
-0.4 0.8

0.8

0 0.7
0 -2 -4 -6 -8 -10 -50 0 50 100 150
VGS (volts) Tj (°C)

Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics

100 -10
f = 1MHz
VDS = -10V
-8
75
C (picofarads)

VGS (volts)

-6

50

-4
CISS VDS = -40V
125 pF
25 COSS
-2
CRSS
35 pF
0 0
0 -10 -20 -30 -40 0 0.5 1.0 1.5 2.0 2.5
VDS (volts) QG (nanocoulombs)

11/12/01

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
4 www.supertex.com