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Abstract— In this paper, a T.E.N.S. It's also used for pain relief during labor. For most
(Transcutaneous Electrical Nerve Stimulation) people, TENS is a safe treatment with no allied side
pain relief unit is designed and fabricated. A low- effects. However, its effectiveness in treating pain is
frequency pulsed electromagnetic field (PEMF) of spike based on individual experience rather than scientific
signals applied to ruptured bone, damaged soft tissues, evidence.
pain and cancerous tumors have considerable healing During TENS pulsed currents are generated by a
effects. The effectiveness of PEMF for curing of pain portable pulse generator and delivered across the
and osteoarthritis is the focus of this article. Precise surface of the skin using conducting pads, called
low frequency pulsed electromagnetic fields electrodes. The convention always of administering
(PEMFs) produce definite cellular and biological TENS is to use electrical characteristics that
effects, based on the amplitude, pulse width, pulse selectively activate large diameter ‘touch’ fibers (Aβ)
rate and wave shape. Here a pain relief unit is without activating smaller diameter non-inceptive
designed having spike waveform of varying amplitude
fibers (Aδ and C) [6].
ranging from 0 to 300volt, frequency range between
30Hz and 130Hz and pulse duration of 1µsec.
I. INTRODUCTION
1 (12 − 0.3)
β= = 0.5 . I csat = = 0.117 mA
(1 + 1) 100 × 103
(1 + β ) I csat 0.117
T = 2 × R3 × C × ln I bs = = = 4.57 ×10−4 mA .
(1 − β ) β 256
Again by applying KVL at input side,
1 (1 + 0.5)
⇒ = 2 × R3 × (0.01 × 10 −6 ) × ln
30 (1 − 0.5) Vi = I B × Rb + Vbe
12 − 0.7
Therefore, R3 = 1.52MΩ. at f = 30 Hz. IB = = 1.13mA .
10 × 103
For frequency, f =130 Hz, C=0.01µF,
I csat
Hence, IB > , So transistor can be operated as
1 β
β= = 0.5 . switch.
(1 + 1)
Icsat=collector saturation current.
So,
(1 + β ) IB= base current to saturate the transistor.
T = 2 × R3 × C × ln
(1 − β ) Vi=input voltage.
1 (1 + 0.5) β =current gain.
⇒ = 2 × R3 × (0.01 × 10 −6 ) × ln
130 (1 − 0.5) RB= base resistance.
Therefore, R3 = 0.35MΩ. at f = 130 Hz . RC=collector resistance.
For power transistor,
D. Design of the differentiator
Buffer has input impedance of 1MΩ approximately.
Choose, f = 130 Hz
So RB=1MΩ.
1
f = Here, Vcc=350Volt, Rc=2MΩ, β=600
2ΠRC
Choose, C=1µF, 350V
1 I CSAT = = 0.175mA .
R= = 1.22kΩ ≅ 1kΩ. 2M Ω
2Π × 130 × 1 × 10 −6
As, β=600.
E. Diode Specification I CSAT 0.175
1N4007 diodes are used in power supply and in = = 2.91×10−4 mA .
rectifier circuit, 1N4007 has maximum recurrent peak β 600
reverse voltage of 1000V, maximum average forward Applying KVL at input side,
rectified current of 1.0 Amp.
Vi = I B × Rb + Vbe
F. Switching Circuit:
Here, the circuit has three sections-Normal BJT,
Buffer and Power BJT. Two transistors act as NOT
12 − 0.7
IB = = 0.113mA .
1× 106
So, in this case again IB>ICSAT/β.
Where,
ICSAT=collector saturation current.
IB=base current to saturate the transistor.
Vi =input base voltage.
β =current gain.
RB= base resistance.
RC=collector resistance.
So, power transistor operates in saturation region and
cut off region. So it works as switch. Fig.4 Power supply unit
A. Output waveforms
REFERENCES