IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 12, NO.
6, NOVEMBER 2013
Gate-All-Around Nanowire MOSFET With Catalytic
Metal Gate For Gas Sensing Applications
Rajni Gautam, Member, IEEE, Manoj Saxena, Senior Member, IEEE, R. S. Gupta, Life Senior Member, IEEE,
and Mridula Gupta, Senior Member, IEEE
Abstract—In this paper, gate-all-around (GAA) MOSFET with
catalytic metal gate is proposed for enhanced sensitivity of gas sen-
sor. P-channel GAA MOSFET with palladium (Pd) metal gate is
used for hydrogen sensing and n-channel GAA MOSFET with
silver (Ag) metal gate is used for Oxygen sensing. The GAA
nanowire MOSFET has already been demonstrated experimen-
tally for biosensing and chemical sensing applications. However,
cylindrical GAA MOSFET with catalytic metal gate for gas sens-
ing applications is proposed for the first time in this paper. An ana-
lytical model is developed for both p-channel and n-channel GAA
MOSFET to calculate the sensitivity of the device in the presence of
gas molecules and analytical model is verified with the simulation
results of ATLAS-3D. Sensitivity of the GAA MOSFET gas sensor
is compared with the conventional bulk MOSFET gas sensor and
impact of the radius of the silicon pillar on the sensitivity of the
GAA MOSFET is also studied.
Index Terms—ATLAS-3D, gas sensor, gate-all-around (GAA)
MOSFET, sensitivity, work function.
I. INTRODUCTION
O meet ever increasing demand of gas detection sensors
T for environmental monitoring, automotive and medical in-
dustries, MOSFET-based gas sensors [1]–[3] is a good choice
as it offers low cost, low power, small size, and high sensitivity
along with CMOS compatibility. In recent years, a MOSFET
gas sensor has been developed for detection of gas species by
measuring the induced shift of work function at the surface of a
sensitive film. Research and development in this field is undergo-
ing in two directions: 1) exploration of suitable sensitive films
such as catalytic metals [1]–[7], metal compounds [8]–[15],
hydrated salts [16], [17], polymers, and other organic com-
pounds [18], [19]; and 2) device engineering including design
and optimization of the field-effect device to enhance the sen-
sitivity. In the area of device engineering, floating gate MOS-
FET [20], SOI MOSFET [21], dual-gate MOSFET [3], and now
nanowire MOSFET [14], [15] devices have been taken into con-
Manuscript received March 17, 2013; revised July 21, 2013; accepted July
29, 2013. Date of publication August 2, 2013; date of current version November
6, 2013. The review of this paper was arranged by Associate Editor A. Bhalerao.
R. Gautam and M. Gupta are with the Semiconductor Device Research Lab-
oratory, Department of Electronic Science, University of Delhi, South Campus,
New Delhi 110021, India (e-mail: mridula@south.du.ac.in).
M. Saxena is with the Department of Electronics, Deen Dayal Upadhyaya
College, University of Delhi, New Delhi 110015, India.
R. S. Gupta is with the Department of Electronics and Communication Engi-
neering, Maharaja Agrasen Institute of Technology, New Delhi 110086, India.
Color versions of one or more of the figures in this paper are available online
at http://ieeexplore.ieee.org.
Digital Object Identifier 10.1109/TNANO.2013.2276394
1536-125X © 2013 IEEE
939
sideration. To increase the sensitivity by increasing the opportu-
nities for surface reactions, a high ratio of surface area to volume
is needed. High surface-to-volume ratio, low leakage current,
better gate control, and nearly ideal subthreshold characteris-
tics [22], [23] make gate-all-around (GAA) nanowire MOS-
FET promising device architecture for developing a low-power
highly sensitive, and nanoscale CMOS-compatible gas sensor.
Gas sensors based on metal oxide NWs such as ZnO, In2 O3 ,
and SnO2 field-effect transistors (FETs) are already demon-
strated [13]–[15]. Another class of FET-based gas sensors using
catalytic metal gate is reported earlier [1]–[3]. Reaction of gas
molecules at the catalytic metal gate surface results in change
in the work function of the gate metal which further causes
change in flat-band voltage, threshold voltage, and drain current
of the MOSFET device. This change in conductivity is directly
related to the amount of a specific gas present in the environ-
ment, resulting in a quantitative determination of gas presence
and concentration. Recently, an FET-based oxygen sensor using
Ag catalytic metal gate has been reported in [2]. Dual-gate FET
hydrogen gas sensor using Pt metal gate was studied by Tsukada
et al. [3]. However, cylindrical GAA MOSFET with catalytic
metal gate has not been explored for gas sensing applications.
In this paper, a GAA p-channel MOSFET with catalytic metal
gate is proposed for the first time for improving the sensitivity
applications. Conventionally, FET-based gas sensors use thresh-
old voltage as the sensitivity parameter; however, in this study,
subthreshold current instead of threshold voltage is used to cal-
culate sensitivity of the gas sensor, which enables low-power
operation along with high sensitivity. A much higher sensitiv-
ity for gas detection is observed in this study when the device
is operated in the subthreshold regime. This type of behavior
was also reported by Gao et al. [24] for nanowire biosensors.
They have reported 500 times improvement in protein detec-
tion limit by operating NW FET in the subthreshold regime.
This high sensitivity in the subthreshold regime is attributed to
the additional band bending taking place in absence of Fermi
level pinning due to change in metal semiconductor work func-
tion after surface reaction. Fabrication of GAA MOSFET has
already been demonstrated experimentally [25], [26] and its de-
vice physics is explained through an analytical model [27], [28].
In this study, GAA MOSFET with Ag metal gate for Oxygen
sensing [5] is modeled and validated by the simulated results
using the ATLAS device simulator [29]. The impact of the ra-
dius of the silicon body on the sensitivity of the gas sensor is
also investigated. The sensitivity of the GAA MOSFET is com-
pared with the Bulk MOSFET which is a conventionally used
architecture for the FET-based gas sensor.
940 IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 12, NO. 6, NOVEMBER 2013

Fig. 2. Validation of simulation results with experimental results [25] for a

cylindrical GAA MOSFET. L = 60 nm, R = 5 nm, and tox = 3.5 nm.

Fig. 1. Schematic structure of GAA MOSFET with air gap dielectric. Device
parameters: channel length (L) = 50 nm, radius (R) = 5 nm, oxide thickness
(tox ) = 2 nm, and channel doping (N A ) = 1 × 102 1 m−3 . (b) Simulated
structure of GAA MOSFET.
TABLE I
LIST OF TECHNOLOGY PARAMETERS
are not taken into account [28]. Various models used in sim-
ulation are as follows: drift diffusion, concentration-dependent
mobility, field-dependent mobility, and Shockley–Read–Hall re-
combination model. Closed proximity of analytical and simu-
lated results with the experimental results [25] as shown in Fig. 2
validates the choice of parameters taken in modeling and sim-
ulation. Two catalytic metal gates (i.e., Pd for hydrogen sensor
and Ag for oxygen sensor) are used. Chemical reaction of gas
molecules at the surface of the catalytic metal gate changes the
work function of the metal. Thus, gas sensitivity of the device
is manifested as a change of the threshold voltage and drain
current. This work is valid at room temperature only as work
function principle of gas sensing is dedicated for room tempera-
ture or slightly elevated temperatures of operation as suggested
by Eisele et al. [30].

III. ANALYTICAL MODEL FORMULATION

Assuming parabolic profile in the radial direction and apply-
ing appropriate potential and electric field boundary conditions,
surface potential can be expressed as
φs (z) = Aek z + Be−k z + Φ for an n-channel
−k z
φs (z) = −Ae kz
− Be −Φ for a p-channel (1)
where k is given by
II. SIMULATION AND CALIBRATION
Fig. 1(a) shows the schematic structure and Fig. 1(b) shows k 2 = 2εox /(εsi R2 ln(1 + tox /R)) (2)
the simulated structure of GAA MOSFET gas sensor with cat- and Φ is given by
alytic metal gate. N-channel GAA MOSFET with Ag metal gate
is used for oxygen detection and p-channel GAA MOSFET with Φ = Vgs − Vfb − qNsi /εsi k 2 for n-channel
Pd gate is used for hydrogen sensing. Ag with p-channel and Φ = Vfb − Vgs − qNsi /εsi k 2 for p-channel. (3)
Pd with n-channel can also be used but it results in very low off
currents (i.e., in the range of femtoamperes) which are under Boundary conditions of electric potential and field are given
measurable limits and also vulnerable to noise. Also, sensing as follows.
circuitry for such low currents adds to the cost of the sensor 1) The center potential is a function of z only:
which is a major concern. Table I shows all the technology φ (r = 0, z) = φc (z). (4)
parameters used in the simulation and model.
2) The electric field at the center of silicon film is zero:
Calibration of model parameters used in the simulation has 
been performed according to the experimental results [25]. Since dφ (r, z) 
= 0. (5)
radius of silicon pillar is greater than 5 nm, thus quantum effects dr  r =0
GAUTAM et al.: GATE-ALL-AROUND NANOWIRE MOSFET WITH CATALYTIC METAL GATE FOR GAS SENSING APPLICATIONS 941

3) The electric field at the silicon oxide interface is given by

   
dφ (r, z)  Cox tsi
t si = V − V − φ r = , z
dr  r = 2
gs fb
εsi 2
for n-channel
    
dφ (r, z)  Cox tsi
= φ r = , z − Vgs + Vfb
dr 
t si
r= 2 εsi 2
for p-channel. (6)

Here, Cox is the oxide capacitance per unit area of the GAA
MOSFET represented by

Cox = εox / ((R/2) ln(1 + tox /R)) . (7)

tsi is the silicon film thickness, R is the silicon pillar radius, and
tox is the gate dielectric layer thickness. εsi is the permittivity of
the silicon and εox is the permittivity of the oxide layer. Vgs is
the gate-to-source voltage and Vfb is the flat-band voltage. ΔΦm
is the change in the catalytic metal work function induced by
the gas molecules reaction at the metal surface. Thus, effective
Vfb is given by

Vfb = φm − φs ± Δφm (8)

where φs is the silicon work function given by

Eg
φs = + χ + qφf p for n-channel
2
Eg
φs = + χ − qφf n for p-channel (9)
2
Δφm depends upon the gate metal and the gas to be detected
Fig. 3. (a) Effect of work function change on surface potential of n-channel
and is given by GAA MOSFET with Ag metal gate. Device parameters: channel length (L) =
  50 nm, radius (R) = 5 nm, oxide thickness (tox ) = 2 nm, channel doping
RT (NA) = 102 1 m−3 . (b) Effect of work function change on surface potential
Δφm = cont − ln P (10) of p-channel GAA MOSFET with Pd metal gate. Device parameters: channel
4F
length (L) = 50 nm, radius (R) = 5 nm, oxide thickness (tox ) = 2 nm, channel
where F is Faraday’s constant, R is the gas constant, T is the doping (N A )=1 × 102 1 m−3 .
absolute temperature, and P is the gas partial pressure. Since
partial pressure depends upon concentration of gas molecules, Based on 2-D potential, subthreshold current is given by
thus the gas sensors can be calibrated to read out in mole fraction  V d −q V (z )/k T
of the gas in air, or units of moles of gas per mole of air. e dV (z)
Isub = 2πRμq ni Vs L . (14)
The coefficients A and B are calculated using boundary con- dz
R
0 eq φ (r,z )/ k T dr
0
ditions at the source and drain and are given by
  Mobility reduction effects are incorporated into the model as
(Vbi + φ) 1 − e−k L + V ds follows:
A= (11)
2 sinh (kL) μ
  μeff = (15)
1 − θ (Vgs − Vth )
(Vbi + φ) ek L − 1 − V ds
B= . (12) where θ is a fitting constant whose value used in this study is
2 sinh (kL)
θ = 0.04.
Complete 2-D potential is given by
IV. RESULT AND DISCUSSION
Cox
φ (r, z) = φs (z) + (Vgs − Vfb − φs (z)) (r2 − R2 ), The FET is used as a transducer which transforms the shift
2εsi R
of work function at the surface of the sensitive film/catalytic
for n-channel
metal into a corresponding electrical signal: a change in the
Cox
φ (r, z) = φs (z) + (φs (z) − Vgs + Vfb ) (r2 − R2 ), drain-source current. Fig. 3(a) and (b) shows the effect of work
2εsi R function change on surface potential of n-channel GAA MOS-
for p-channel . (13) FET with Ag metal gate and p-channel GAA MOSFET with Pd
942
Fig. 4. (a) Id s versus V g s with and without gas molecules for n-channel GAA
MOSFET with Ag metal gate. Device parameters: channel length (L) = 50 nm,
radius (R) = 5 nm, oxide thickness (tox ) = 2 nm, channel doping (N A ) =
102 1 m−3 , drain-to-source voltage (V d s ) = 0.05 V. (b) Id s versus V g s with and
without gas molecules for p-channel GAA MOSFET with Pd metal gate. Device
parameters: channel length (L) = 50 nm, radius (R) = 5 nm, oxide thickness
(tox ) = 2 nm, channel doping (N A ) = 102 1 m−3 , and drain-to-source voltage
(V d s ) = 0.05 V.
metal gate, respectively. Reaction of gas molecules at the cat-
alytic metal gate surface results in change in the work function
of the gate metal which further causes change in flat-band volt-
age due to additional band bending. Flat-band voltage change
results in shift in the surface potential, threshold voltage Vth ,
and drain current. Thus, by monitoring the change in Vth , Ioff ,
and Ion , it is possible to detect the presence of gas molecules, for
example, oxygen, hydrogen, ammonia, and other hydrocarbons
using suitable catalytic metal gates. Fig. 4(a) and (b) shows the
effect of work function change on the drain current for n-channel
and p-channel GAA MOSFET respectively. As can be seen, Ioff
is changed exponentially when the work function is changed
in millivolts and it clearly shows that effect of gas molecules
is much higher on Ioff as compared to Ion ; thus, subthreshold
region offers much higher sensitivity along with low-power op-
eration, thus providing low-cost gas sensor device. This high
sensitivity in the subthreshold regime is attributed to the ad-
IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 12, NO. 6, NOVEMBER 2013
Fig. 5. Id s versus V g s with and without gas molecules for p-channel bulk
MOSFET with Pd metal gate. Device parameters: channel length (L) = 50 nm,
silicon film thickness (tsi ) = 20 nm, oxide thickness (tox ) = 2 nm, channel
doping (N A )=102 1 m−3 , drain-to-source voltage (V d s ) = 0.05 V.
TABLE II
SENSITIVITY COMPARISON OF p-CHANNEL GAA MOSFET WITH Pd GATE
AND BULK MOSFET WITH Pd GATE
ditional band bending in absence of Fermi level pinning due
to change in metal semiconductor work function after surface
reaction of gas molecules. This type of behavior has also been
reported by Gao et al. [24] for nanowire biosensors. 100-meV
change in work function of Pd metal gate in p-channel GAA
MOSFET results in 43 times change in Ioff . Close proximity
of the analytical results with the simulated results for both n-
channel and p-channel GAA MOSFETs validates the analytical
model. Fig. 5 shows the effect of work function change on
drain current characteristics of the bulk MOSFET. The order of
change in Ioff is only five times for bulk MOSFET, whereas it is
43 times for GAA MOSFET for 100-meV change in the work
function; thus, GAA MOSFET shows much higher sensitivity
for gas detection as compared to bulk MOSFET.
Table II demonstrates the sensitivity comparison in terms of
order of change in Ioff , i.e., ratio of Ioff before and after gas
reaction at the gate metal. The effect of work function change
GAUTAM et al.: GATE-ALL-AROUND NANOWIRE MOSFET WITH CATALYTIC METAL GATE FOR GAS SENSING APPLICATIONS
induced by gas molecules on Ioff is compared for two architec-
tures, i.e., bulk MOSFET and GAA MOSFET. Both devices are
optimized for the same threshold voltage. Enhanced sensitivity
in case of GAA structure is due to surrounding gate structure
having higher surface-to-volume ratio which means exposing
the channel to a more effective control of gate which appears in
greater change in subthreshold current when the work function
of the gate metal is changed due to reaction of gas molecules
with catalytic metal gate. Table II also illustrates the effect of
silicon pillar radius on the sensitivity of the GAA MOSFET gas
sensor. For a GAA MOSFET, higher radius gives higher current
driving capability and higher gain but thinner radius leads to
better subthreshold characteristics. Since in this study, change
in subthreshold current is used as the sensitivity parameter for
gas sensing, therefore, subthreshold characteristics are of major
concern. It can be seen from Table II that sensitivity is enhanced
for thinner silicon body. Higher sensitivity in case of thinner
silicon body is attributed to the higher surface to volume ratio,
enhanced gate control, and low subthreshold leakage current.
V. CONCLUSION
GAA MOSFET with catalytic metal gate shows high sen-
sitivity toward detection of gas molecules over conventional
bulk MOSFET due to its surrounding gate structure and higher
surface-to-volume ratio. N-channel GAA MOSFET with Ag
gate is used for oxygen sensing and p-channel GAA MOSFET
with Pd gate is used for hydrogen sensing. Change in subthresh-
old current induced by work function change of gate metal due
to reaction of gas molecules at the surface of gate catalytic
metal is used as the sensitivity parameter which provides very
high sensitivity as compared to the case when sensitivity is cal-
culated in terms of threshold voltage change or change in on
current. Operating device in the subthreshold region is also ad-
vantageous because it provides low-power, low-cost gas sensor.
The sensitivity of the device can be further increased by de-
creasing the radius of the silicon nanowire. The effective gate
control, large surface-to-volume ratio, and better short-channel
characteristics of GAA MOSFET make it a promising candidate
for ultrasensitive, small, low-power, low-cost, CMOS-based gas
sensors.
ACKNOWLEDGMENT
The authors are grateful to the Defence Research and De-
velopment Organization, Government of India. R. Gautam is
thankful to the University Grants Commission, Government of
India for providing the necessary financial assistance to carry
out this research work.
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Rajni Gautam (M’10) is currently working toward
the Ph.D. degree in the Department of Electronic Sci-
ence, University of Delhi South Campus, New Delhi,
India.
IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 12, NO. 6, NOVEMBER 2013
Manoj Saxena (SM’08) received the B.Sc.(Hons.),
M.Sc., and Ph.D. degrees in electronics from the Uni-
versity of Delhi, New Delhi, India.
He is currently an Associate Professor with Deen
Dayal Upadhyaya College, University of Delhi, In-
dia.
R. S. Gupta (LSM’10) received the Ph.D. degree
from Banaras Hindu University, Varanasi, India, in
1970.
He is currently a Professor and a Department Head
with the Maharaja Agrasen Institute of Technology,
New Delhi, India.
Mridula Gupta (SM’09) received the Ph.D. degree
from the University of Delhi, New Delhi, India, in
1998.
She is currently an Associate Professor with
the Department of Electronic Science, University of
Delhi South Campus, New Delhi.