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FQP5N50C/FQPF5N50C
QFET TM
FQP5N50C/FQPF5N50C
500V N-Channel MOSFET
D
!
◀ ▲
G! ●
●
TO-220 GD S
TO-220F
G DS
FQP Series FQPF Series !
S
Thermal Characteristics
Symbol Parameter FQP5N50C FQPF5N50C Units
RθJC Thermal Resistance, Junction-to-Case 1.71 3.31 °C/W
RθJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 500 -- -- V
∆BVDSS Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C
/ ∆TJ Coefficient
IDSS VDS = 500 V, VGS = 0 V -- -- 1 µA
Zero Gate Voltage Drain Current
VDS = 400 V, TC = 125°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 2.5A -- 1.14 1.4 Ω
On-Resistance
gFS Forward Transconductance VDS = 40 V, ID = 2.5A (Note 4) -- 5.2 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 480 625 pF
Coss Output Capacitance f = 1.0 MHz -- 80 105 pF
Crss Reverse Transfer Capacitance -- 15 20 pF
Switching Characteristics
td(on) Turn-On Delay Time -- 12 35 ns
VDD = 250 V, ID = 5A,
tr Turn-On Rise Time -- 46 100 ns
RG = 25 Ω
td(off) Turn-Off Delay Time -- 50 110 ns
(Note 4, 5)
tf Turn-Off Fall Time -- 48 105 ns
Qg Total Gate Charge VDS = 400 V, ID = 5A, -- 18 24 nC
Qgs Gate-Source Charge VGS = 10 V -- 2.2 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 9.7 -- nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 21.5 mH, IAS = 5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
VGS
Top : 15.0 V
10.0 V
1 8.0 V
10 7.0 V
6.5 V 1
6.0 V 10
5.5 V
Bottom : 5.0 V
o
150 C
0 o
10 25 C
0 o
10 -55 C
※ Notes : ※ Notes :
-1
10 1. 250μ s Pulse Test 1. VDS = 40V
2. TC = 25℃ 2. 250μ s Pulse Test
-1
10
10
-1
10
0
10
1 2 4 6 8 10
4.5
4.0 10
1
3.5
Drain-Source On-Resistance
VGS = 10V
IDR, Reverse Drain Current [A]
3.0
RDS(ON) [Ω ],
2.5
0
10
2.0
VGS = 20V
1.5 150℃
※ Notes :
25℃
1.0 1. VGS = 0V
※ Note : TJ = 25℃ 2. 250μ s Pulse Test
-1
0.5 10
0 5 10 15 0.2 0.4 0.6 0.8 1.0 1.2 1.4
ID, Drain Current [A] VSD, Source-Drain voltage [V]
1200 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1000 10 VDS = 100V
VGS, Gate-Source Voltage [V]
VDS = 250V
800 Ciss 8
Capacitance [pF]
VDS = 400V
Coss
600 6
400 4
※ Notes ;
Crss 1. VGS = 0 V
2. f = 1 MHz
200 2
※ Note : ID = 5A
0 0
-1 0 1 0 5 10 15 20
10 10 10
VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]
1.2 3.0
2.5
Drain-Source Breakdown Voltage
1.1
Drain-Source On-Resistance
BV DSS , (Normalized)
RDS(ON) , (Normalized)
2.0
1.0 1.5
1.0
0.9 ※ Notes :
1. VGS = 0 V ※ Notes :
2. ID = 250 μ A 0.5 1. VGS = 10 V
2. ID = 2.5 A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o
o TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
10 µs
10 µs
10
1 100 µs 1 100 µs
10
1 ms
ID, Drain Current [A]
1 ms
10 ms
100 ms 10 ms
100 ms
0 DC 0
10 10 DC
-1 -1
10 ※ Notes : 10 ※ Notes :
o
o
1. TC = 25 C 1. TC = 25 C
o
2. TJ = 150 C
o 2. TJ = 150 C
3. Single Pulse 3. Single Pulse
-2 -2
10 10
0 1 2 3 0 1 2 3
10 10 10 10 10 10 10 10
VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for FQP5N50C for FQPF5N50C
4
ID, Drain Current [A]
0
25 50 75 100 125 150
TC, Case Temperature [℃]
(t), T h e rm a l R e s p o n s e
0
10 D = 0 .5
0 .2
0 .1
※ N o te s :
-1 0 .0 5 1 . Z θ J C (t) = 1 .7 1 ℃ /W M a x .
10
2 . D u ty F a c to r, D = t 1 /t 2
0 .0 2 3 . T J M - T C = P D M * Z θ J C (t)
0 .0 1
θ JC
s in g le p u ls e PDM
Z
t1
t2
-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
D = 0 .5
0
10
0 .2
0 .1
0 .0 5 ※ N o te s :
1 . Z θ J C (t) = 3 .3 1 ℃ /W M a x .
-1
2 . D u ty F a c to r, D = t 1 /t 2
10 3 . T J M - T C = P D M * Z θ J C (t)
0 .0 2
θ JC
0 .0 1
PDM
Z
s in g le p u ls e
t1
-2
t2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd
DUT
3mA
Charge
RL VDS
VDS 90%
VGS VDD
RG
10%
VGS
10V DUT
td(on) tr td(off)
tf
t on t off
L BVDSS
1
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)
DUT +
VDS
I SD
L
Driver
RG
Same Type
as DUT VDD
IRM
VSD VDD
Body Diode
Forward Voltage Drop
TO - 220
Dimensions in Millimeters
TO-220F
3.30 ±0.10
6.68 ±0.20
15.87 ±0.20
15.80 ±0.20
(1.00x45°)
MAX1.47
9.75 ±0.30
0.80 ±0.10
(3
0°
)
#1
0.35 ±0.10 +0.10
0.50 –0.05 2.76 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]
4.70 ±0.20
9.40 ±0.20
Dimensions in Millimeters
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Authorized Distributor
ON Semiconductor:
FQPF5N50CYDTU FQPF5N50C FQPF5N50CT