There are some advantages of bipolar junction transistor

(BJT) are as given below,

1. The bipolar junction transistor (BJT) has a large gain bandwidth.
2. The BJT shows better performance at high frequency.
3. The BJT has a better voltage gain.
4. The BJT can be operated in low or high power applications.
5. The BJT has high current density.
6. There is low forward voltage drop.

they have faster switching speeds and higher operating frequencies.

There are some disadvantages of bipolar junction
transistor (BJT) are as given below,
1. The bipolar junction transistor (BJT) more noise produced.
2. The BJT are more effect by radiation.
3. BJT has a low thermal stability.
4. The switching frequency of BJT is low.
5. It has a very complex base control. So it may lead to confusion and requires a skilful handling.

 The fact that they are current driven means they consume more power and also
generate more waste heat, (some components such as microprocessors require
cooling when they are in use).
 The heat generated, limits how closely BJTs can be "packed" onto integrated
circuits, (they need more spacing to dissipate the heat

Advantages

MOSFETs provide greater efficiency while operating at lower voltages.
 Absence of gate current results in high input impedance producing high switching
speed.
 They operate at lower power and draws no current.

 They can be operated in either enhancement mode or depletion mode.

➨They have much higher input impedance
➨They have high drain resistance due to lower resistance of channel.
➨They are easy to manufacture.
➨They support high speed of operation.
 mosfet are small compare to bjt's so it fabricated easily and space
saving scheme on the ic's
 2- mosfet's input impedance are very high so they do not load the
circuits. loading effect doesn't arise.
  3- operating frequency is very high so may be used at higher
frequencies.
 used in digital circuits for it's reliability.
 5- effect of noise is less than bjt. so high signal to noise ratio.
 6-mosfets are unipolar devices so reverse saturation current
doesn't exist.
 7- it consume less D.C power rather than BJT.


Disadvantages of MOSFET
 The thin oxide layer make the MOSFETs vulnerable to permanent damage when
evoked by electrostatic charges.
 Overload voltages makes it unstable.

➨In MOSFET, the layer between Gate and Channel is very fragile which is
vulnerable to electro-static damage during installation. It requires well designed
circuit to avoid the issue.
➨MOSFET is very susceptible to overload voltages, hence special handling is
required during installation.
handling is not easy-

Mosfet is very sensitive to electrostatic charge so it may be destroy

when you touch the pins of a mosfet devices by hand.

trans conductance is low than BJT.

The transistors BJT and MOSFET are both useful for

amplification and switching applications. Yet, they have
significantly different characteristics.

BJT is a Bipolar Junction Transistor, while MOSFET is a Metal

Oxide Semiconductor Field-Effect Transistor

3. BJTs are preferred for low current applications, while

MOSFETs are for high power functions.

4. In digital and analog circuits, MOSFETs are considered to be

more commonly used than BJTs these days.

A BJT has three terminals namely base, emitter and collector, while a MOSFET has three

terminals namely source, drain and gate.

 BJT’s are used for low current applications, whereas MOSFET is used for high power
applications.
 The working of BJT depends on the current at the base terminal and the working of the
MOSFET depends on the voltage at the oxide insulated gate electrode.
 The BJT is a current controlled device and MOSFET is a voltage controlled device.
MOSFETs are used more than BJTs in most of the applications
 The structure of the MOSFET is more complex than BJT

BJT Mosfet
Type PNP or NPN N-type or P-Type
Device Current Controlled Device Voltage Controlled Device
Output controlled By controlling base current By controlling gate voltage
Temperature coefficient Negative temperature coefficient Positive temperature coefficient
Input Impedance Low High
Switching Frequency Low High
BJT Mosfet
Preferred Low Current Application Hight Power Application