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• 80V/90A,
RDS(ON)=7.8 mΩ (typ.) @ VGS=10V
• Avalanche Rated
• Reliable and Rugged
S S
• Lead Free and Green Devices Available G
D
G
D
(RoHS Compliant) S
D
G
Applications
D
Package Code
D U S D : TO-252-2L U : TO-251-3L
S : TO-251-3L
HY1908 HY1908 HY1908
ÿ
YYXXXJWW ÿ
G YYXXXJWW ÿ
G YYXXXJWW G Date Code Assembly Material
YYXXX WW G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
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150709
HY1908D/U/S
HY1908
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 80 - - V
VDS=80V, VGS=0V - - 1
IDSS Zero Gate Voltage Drain Current µA
TJ=85°C - - 10
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 2 3 4 V
IGSS Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA
RDS(ON)* Drain-Source On-state Resistance VGS=10V, IDS=45A - 7.8 9.0 mΩ
Diode Characteristics
VSD * Diode Forward Voltage ISD=45A, VGS=0V - 0.8 1.2 V
trr Reverse Recovery Time - 30 - ns
ISD=45A, dlSD/dt=100A/µs
Qrr Reverse Recovery Charge - 25 - nC
2
HY1908D/U/S
HY1908
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 1.2 - Ω
Ciss Input Capacitance - 3864 -
VGS=0V,
Coss Output Capacitance VDS=25V, - 365 - pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance - 239 -
td(ON) Turn-on Delay Time - 26 -
Tr Turn-on Rise Time VDD=40V, R G=6 Ω, - 42 -
IDS=45A, VGS=10V, ns
td(OFF) Turn-off Delay Time - 64 -
Tf Turn-off Fall Time - 20 -
Gate Charge Characteristics
Qg Total Gate Charge - 84 -
VDS=64V, VGS=10V,
Qgs Gate-Source Charge - 16 - nC
IDS=45A
Qgd Gate-Drain Charge - 26 -
Note * : Pulse test ; pulse width ≤300µs, duty cycle≤2%.
3
HY1908D/U/S
105 90
limited by package
70
75
60
60 50
45 40
30
30
20
15
10
o
TC=25 C o
TC=25 C,VG=10V
0 0
0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200
100
on
s(
Rd
100us
1ms
10
10ms
1
DC
O
TC=25 C
0.1
0.1 1 10 100 500
Duty = 0.5
1
0.2
0.1
0.1 0.05
0.02
0.01
0.01
Single
Mounted on minimum pad
o
RθJA : 110 C/W
0.001
0.0001 0.001 0.01 0.1 1 10
Square Wave Pulse Duration (sec)
4
HY1908D/U/S
120 10
VGS=6,7,8,9,10V
VGS=10V
8
80
7
60
4V
6
40
5
20 3V 4
0 3
0 1 2 3 4 5 0 20 40 60 80 100
30
1.2
25
1.0
20
0.8
15
0.6
10
5 0.4
0 0.2
3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150 175
5
HY1908D/U/S
2.0
Normalized On Resistance
o
Tj=25 C
1.0
1
0.5
o
RON@Tj=25 C: 7.8mΩ
0.0 0.1
-50 -25 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
8
4200
7
C - Capacitance (pF)
3600
6
3000
5
2400
4
1800
3
1200 2
600 Coss 1
Crss
0 0
0 5 10 15 20 25 30 35 40 0 20 40 60 80 100
6
HY1908D/U/S
VDS
L VDSX(SUS)
tp
DUT VDS
IAS
RG
VDD
VDD
tp IL EAS
0.01Ω
tAV
VDS
RD
V
DS
DUT 90%
VGS
RG
VDD
10%
tp
VGS
td(on) tr td(off) tf
7
HY1908D/U/S
Package Information
TO-252-2L
8
HY1908D/U/S
TO-251-3L(IPAK)
9
HY1908D/U/S
TO-251-3L(SIPAK)
10
HY1908D/U/S
Classification Profile
11
HY1908D/U/S
12