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For a silicon diode, the value of the forward bias voltage typically
(a) must be greater than 0.3 V
(b) must be greater than 0.7 V
(c) depends on the width of the depletion region
(d) depends on the concentration of majority carriers.
10. At room temperature of 25°C, the barrier potential for silicon is 0.7 V. Its value at
125°C is................. volt.
(a) 0.5
(b) 0.3
(c) 0.9
(d) 0.7.
13. Reverse current in a silicon junction nearly doubles for every........... °C rise in
temperature.
(a) 10
(b) 2
(c) 6
(d) 5.
ANSWER
1. (b) 2. (b) 3. (c) 4. (d) 5. (d) 6. (c) 7. (c)8. (c) 9. (d) 10. (c) 11. (c) 12. (a) 13. (c) 14.
(d)15. (b) 16. (c) 17. (a) 18. (a) 19. (d) 20. (b) 21. (b)
1. LEDs are commonly fabricated from gallium compounds like gallium arsenide and
gallium phosphide because they
(a) are cheap
(b) are easily available
(c) emit more heat
(d) emit more light.
10. Solar cells are used as source of power in earth satellites because they have
(a) very high efficiency
(b) unlimited life
(c) higher power capacity per weight
14. Optical couplers are designed to ............. one circuit from another.
(a) control
(b) isolate
(c) disconnect
(d) protect.
15. The main purpose of using optical isolators is to provide protection to devices
from
(a) high-voltage transients
(b) surge voltages
(c) low-level noise
(d) all of the above.
16. A LED emits visible light when its ..............
(a) P-N junction is reverse-biased
(b) depletion region widens
(c) holes and electrons recombine
(d) P-N junction becomes hot.
19. Phototransistors respond much like a conventional transistor except that, in their
case, light energy is used to .........
(a) alter leakage current
(b) change base voltage
(c) switch it ON
(d) alter emitter current
1. (d) 2. (a) 3. b 4. (a) 5. (b) 6. (d) 7. (e) 8. (d) 9. (c) 10. (d) 11. (d) 12. (d)13. (a) 14.
(b) 15. (d) 16. (c) 17. (a) 18. (d) 19. (c)
1. The main job of a voltage regulator is to provide a nearly—output voltage.
(a) sinusoidal
(b) constant
(c) smooth
(d) fluctuating.
4. In a Zener diode shunt voltage regulator, the diode regulates so long as it is kept in
............. condition.
(a) forward
(b) reverse
(c) loaded
(d) unloaded
9. An op-amp shunt regulator differs from the series regulator in the sense that its
control element is connected in
(a) series with line resistor
(b) parallel with line resistor
(c) parallel with load resistor
(d) parallel with input voltage.
10. A switching voltage regulator can be of the following type:
(a) step-down (b) step-up
(c) inverting (d) all of the above
12. The output voltage of a step-down type switching voltage regulator depends on
(a) input voltage
(b) duty cycle
(c) transistor on-time
(d) all of the above.
1. (b) 2. (a) 3. (d) 4. (b) 5. (c) 6. (c) 7. (d) 8. (d) 9. (a) 10. (d) 11. (d) 12. (d)13. (d)
14. (d) 15. (d).
1. The emitter of a transistor is generally doped the heaviest because it
(a) has to dissipate maximum power
(b) has to supply the charge carriers
(c) is the first region of the transistor
(d) must possess low resistance.
2. For current working of an NPN bipolar junction transistor, the different electrodes
should have the following polarities with respect to emitter.
(a) collector +ve, base –ve
(b) collector –ve, base + ve
(c) collector – ve, base –ve
(d) collector + ve, base +ve
7. In a junction transistor, the collector cut off current ICBO reduces considerably by
doping the
(a) emitter with high level of impurity
(b) emitter with low level of impurity
(c) collector with high level of impurity
(d) collector with low level of impurity
14. If a change in base current does not change the collector current, the transistor
amplifier is said to be
(a) saturated (b) cut-off
(c) critical (d) complemented.
17. If, in a bipolar junction transistor, IB = 100 A and IC = 10 mA, in what range
does the value of its beta lie?
(a) 0.1 to 1.0
(b) 1.01 to 10
(c) 10.1 to 100
(d) 100.1 to 1000.
18. In a BJT, largest current flow occurs
(a) in the emitter
(b) in the collector
(c) in the base
(d) through CB junction.
27. A bipolar junction transistor (BJT) is used as power control switch by biasing it in
the cut-off region (OFF state) or in the saturation region (ON state). In the ON state,
for the BJT.
(a) both the base-emitter junction and base collector junctions are reverse biased
(b) the base-emitter is reverse biased, and the base-collector junction is forward
biased
(c) the base-emitter junction is forward biased, and the base-collector junction is
reverse biased
(d) both the base-emitter and base-collector junctions are forward biased.
1. (a) 2. (d) 3. (a) low, heavily (b) lower (c) high, lightly 4. (c) 5. (b) 6. (b) 7. (d)
8. (a) 9. (d) 10. (c) 11. (c) 12. (a) 13. (b) 14. (a) 15. (b) 16. (b) 17. (b) 18. (a)
19. (c) 20. (b) 21. (c) 22. (d) 23. (d) 24. (b) 25. (a) 26. (c) 27. (d)
1. An OP-AMP can be classified as ............. amplifier.
(a) linear
(b) low-rin
(c) positive feedback
(d) RC-coupled.
8. In an inverting amplifier, the two input terminals of an ideal OP-AMP are at the
same potential because
(a) the two input terminals are directly shorted internally
(b) the input impedance of the OP-AMP is infinity
(c) common-mode rejection ratio is infinity
(d) the open-loop gain of the OP-AMP is infinity.
ANSWERS
1. (a) 2. (d) 3. (b) 4. (c) 5. (a) 6. (d) 7. (b) 8. (b) 9. (b) 10. (c) 11. (d) 12. (d) 13. (c)
14. (d) 15. (d) 16. (b) 17. (a)
1. Silicon is preferred for manufacturing Zener diodes because it
(a) is relatively cheap
(b) needs lower doping level
(c) has higher temperature and current capacity
(d) has lower break-down voltage.
3. The main reason why electrons can tunnel through a P-N junction is that
(a) they have high energy
(b) barrier potential is very low
(c) depletion layer is extremely thin
(d) impurity level is low.
6. The microwave device used as an oscillator within the frequency range 10-1000
GHz is............................. diode.
(a) Schottky
(b) IMPATT
(c) Gunn
(d) Step Recovery.
9. A special purpose diode which uses metals like gold, silver or platinum on one side
of the junction, n-type doped silicon on another side and has almost no charge storage
in the junction, is a
(a) Schottky diode
(b) tunnel diode
(c) varactor diode
(d) Zener diode
12. A diode that has no depletion layers and operates with hot carriers is called ......
diode.
(a) Schottky
(b) Gunn
(c) step recovery
(d) PIN
14. When the reverse bias voltage of a varactor diode increases, its
(a) capacitance decreases
(b) leakage current decreases
(c) negative resistance increases
(d) depletion zone decreases.
15. Which of the following are negative resistance microwave diodes oscillator
applications?
(a) Gunn
(b) IMPATT
(c) step recovery
(d) both (a) and (b)
(e) both (b) and (c).
19. Avalanche photodiodes are preferred over PIN diodes in optical communication
systems because of
(a) speed of operation
(b) higher sensitivity
(c) larger bandwidth
(d) larger power handling capacity
ANSWER:
1. (c) 2. (d) 3. (c) 4. (d) 5. (c) 6. (b) 7. (d) 8. (d) 9. (a) 10. (c)
11. (d) 12. (a) 13. (b) 14. (a) 15. (d) 16. (b) 17. (b) 18. (a) 19. (a) 20. (c)