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Features
● N channel
● Logic level
● Enhancement mode
● Temperature sensor with thyristor characteristic
● The drain pin is electrically shorted to the tab 3
2
1
Pin 1 2 3
G D S
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TEMPFET® BTS 132
Electrical Characteristics
at Tj = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage V(BR)DSS V
VGS = 0, ID = 0.25 mA 60 – –
Gate threshold voltage VGS(th)
VGS = VDS, ID = 1 mA 1.5 2.0 2.5
Zero gate voltage drain current I DSS µA
VGS = 0 V, VDS = 60 V
Tj = 25 °C – 1 10
Tj = 125 °C – 100 300
Gate-source leakage current I GSS
VGS = 20 V, VDS = 0
Tj = 25 °C – 10 100 nA
Tj = 150 °C – µA
Drain-source on-state resistance RDS(on) Ω
VGS = 4.5 V, ID =12 A – 0.055 0.065
Dynamic Characteristics
Forward transconductance gfs S
VDS ≥ 2 × ID × RDS(on)max, ID = 12 A 12 17 22
Input capacitance Ciss pF
VGS = 0, VDS = 25 V, f = 1 MHz 800 1050 1400
Output capacitance Coss
VGS = 0, VDS = 25 V, f = 1 MHz – 500 750
Reverse transfer capacitance Crss
VGS = 0, VDS = 25 V, f = 1 MHz – 200 300
Turn-on time ton, (ton = td(on) + tr) td(on) – 25 40 ns
VCC = 30 V, VGS = 5 V, ID = 3 A, RGS = 50 Ω tr – 150 200
Turn-off time toff, (toff = td(off) + tf) td(off) – 180 250
VCC = 30 V, VGS = 5 V, ID = 3 A, RGS = 50 Ω tf – 125 160
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TEMPFET® BTS 132
Reverse Diode
Continuous source current IS – – 24 A
Pulsed source current I SM – – 96
Diode forward on-voltage VSD V
I F = 48 A, VGS = 0 – 1.5 2.0
Reverse recovery time t rr ns
I F = I S, diF/dt = 100 A/µs, VR = 30 V – 150 –
Reverse recovery charge Q rr µC
I F = I S, diF/dt = 100 A/µs, VR = 30 V – 1.0 –
Temperature Sensor
Forward voltage VTS(on) V
I TS(on) = 5 mA, Tj = – 55 ... + 150 °C – 1.3 1.4
Sensor override, tp ≤ 100 µs
Tj = – 55 ... + 160 °C – – 10
Forward current ITS(on) mA
Tj = – 55 ... + 150 °C – – 5
Sensor override, tp ≤ 100 µs
Tj = – 55 ... + 160 °C – – 600
Holding current, VTS(off) = 5 V, Tj = 25 °C IH 0.05 0.1 0.5
Tj = 150 °C 0.05 0.2 0.3
Switching temperature TTS(on) °C
VTS = 5 V 150 – –
Turn-off time toff µs
VTS = 5 V, ITS(on) = 2 mA 0.5 – 2.5
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TEMPFET® BTS 132
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TEMPFET® BTS 132
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TEMPFET® BTS 132
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TEMPFET® BTS 132
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TEMPFET® BTS 132
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TEMPFET® BTS 132
9.9
9.5 4.4
3.7 1.3
2.8
15.6
17.5
12.8
1)
9.2
1
4.6
3)
13.5
2)
0.75 0.5
1.05 2.4
2.54 2.54 GPT05155
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TEMPFET® BTS 132
Edition 04.97
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München, Germany
© Infineon Technologies AG 2000.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
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circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
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approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
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devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
10 04.97
Mouser Electronics
Authorized Distributor
Infineon:
BTS132 E3045A BTS132 E3129