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SUBMITTED BY
PRIYANKA PRAJAPATI
PRIYANKA PRAJAPATI
Contents:
Introduction
Intrinsic semiconductors
Extrinsic semiconductors
N type semiconductors
P type semiconductors
INTRODUCTION
Semiconductors :- Most of the solids can be placed in one of
the two classes: Metals and insulators. Metals are those
through which electric charge can easily flow, while insulators
are those through which electric charge is difficult to
flow. This distinction between the metals and the insulators
can be explained on the basis of the number of free electrons in
them. Metals have a large number of free electrons which act
as charge carriers, while insulators have practically no free
electrons.
There are however, certain solids whose electrical conductivity
is intermediate between metals and insulators. They are called
‘Semiconductors’. Carbon, silicon and germanium are
examples of semi-conductors. In semiconductors the outer
most electrons are neither so rigidly bound with the atom as in
an insulator, nor so loosely bound as in metal. At absolute zero
a semiconductor becomes an ideal insulator.
But when we heat the crystal and thus provide some energy to
the atoms and their electrons, it becomes an easy matter for
some electrons to jump the small ( 1 ev) energy gap and go
to conduction band. Thus at higher temperatures, the crystal
becomes a conductors. This is the specific property of the
crystal which is known as a semiconductor.
I = Ie + Ih (i)
It ne is the number density of conduction band electrons in the
semiconductor and ve, the drift velocity of electrons then
Ie = eneAve
Similarly, the hole current, Ih = enhAvh
From (i) I = eneAve + enhAvh
I = eA(neve + nhvh) (ii)
If is the resistivity of the material of the semiconductor, then the
resistance offered by the semiconductor to the flow of current is given by :
R = l/A (iii)
Since V = RI, from equation (ii) and (iii) we have
V = RI = l/A eA (neve + nh vh)
V = le(neve + nhvh) (iv)
If E is the electric field set up across the semiconductor, then:
E = V/l (v)
from equation (iv) and (v), we have
E = e (neve + nhvh)
1/ = e (ne ve/E + nh vh/E)
On applying electric field, the drift velocity acquired by the electrons (or
holes) per unit strength of electric field is called mobility of electrons (or
holes). Therefore,
mobility of electrons and holes is given by :
e = ve/E and h = vh/E
1/ = e(ne e + nh h) (vi)
Also, = 1/ is called conductivity of the material of semiconductor
= e (ne e + nh h) (vii)
The relation (vi) and (vii) show that the conductivity and resistivity
of a semiconductor depend upon the electron and hole number densities and their
mobilities. As ne and nh increases with rise in temperature,
therefore, conductivity of semiconductor increases with rise in temperature and
resistivity decreases with rise in temperature.
References:
https://www.google.com/
https://en.wikipedia.org/wiki/Semiconductor
https://www.britannica.com/science/semiconductor
The End