Вы находитесь на странице: 1из 16

EE203 Semiconductor Devices

L22: PN Homojunction - 5

Arun Tej M.
Current Components

(unequal distributions)

𝑛𝑝 (𝑥) 𝑝𝑛 (𝑥)
𝑛0𝑝 𝑝0𝑛
−𝑥𝑜𝑝 𝑥𝑜𝑛 𝑥

𝐽𝑝 𝑥 𝐽𝑛 𝑥

𝐽𝑝 𝑥
𝐽𝑛 𝑥

−𝑥𝑜𝑝 𝑥𝑜𝑛 𝑥
𝑉 𝑁𝐴 𝑉 𝑁𝐷

𝑁𝐴 ↑ 𝑁𝐷 ↑

For a fixed voltage, to increase current?

𝑉 𝑁𝐴 𝑁𝐷

𝑁𝐴 ↑ ? 𝑁𝐷 ↑ ?
𝐽𝑝𝑝 𝐽𝑝𝑛
𝐽𝑛𝑝 𝐽𝑛𝑛 𝐷𝑝 𝑛𝑖2 𝐷𝑛 𝑛𝑖2
𝐽≈𝑞 + 𝑒 𝑞𝑉Τ𝑘𝑇 − 1
𝑉 −𝑞 −𝑞 𝐿𝑝 𝑁𝐷 𝐿𝑛 𝑁𝐴

𝐽𝑝𝑛 𝑥𝑜𝑛 𝐽𝑛𝑝 −𝑥𝑜𝑝

What can be done to increase 𝐽𝑝𝑛 ?


𝐽𝑝𝑛
𝐽𝑛𝑝
Increase 𝑁𝐴 ? Decrease 𝑁𝐷

−𝑥𝑜𝑝 𝑥𝑜𝑛 𝑥 Minority carriers determine the current.


𝐽𝑝𝑛
On the other hand, to increase the ratio ?
𝐽𝑛𝑝
Heterojunction (say, Si-Ge diode) 𝐽𝑝𝑛 𝑁𝐴
∝ Increase 𝑁𝐴 , Decrease 𝑁𝐷
𝐽𝑛𝑝 𝑁𝐷
⇒ Different 𝑛𝑖 values on 𝑃- and 𝑁- sides
Further increase in the ratio possible Important for BJTs
One-Sided Abrupt Junction

𝐷𝑝 𝑛𝑖2 𝐷𝑛 𝑛𝑖2
𝐼 ≈ 𝑞𝐴 + 𝑒 𝑞𝑉Τ𝑘𝑇 − 1
𝑉 𝐿𝑝 𝑁𝐷 𝐿𝑛 𝑁𝐴

2
𝑛 𝑖
𝑝+ − 𝑛 diode ⇒ 𝑁𝐴 is much larger ⇒ is much smaller ⇒ 2nd term in the brackets can be neglected
𝑁𝐴
Similarly, for an 𝑛+ − 𝑝 diode, 1st term can be neglected

Parasitic Series Resistance


Device contacts and semiconductor quasi-neutral regions have small resistance ⇒ Voltage drop

𝑉 = 𝑉𝑑𝑖𝑜𝑑𝑒 + 𝐼𝑅𝑠 ⇒ 𝐼 ≈ 𝐼𝑜 𝑒 𝑞 𝑉−𝐼𝑅𝑠 Τ𝑘𝑇 −1 T.A. Fjeldly et al, IEEE TED, 1991
M.T. Abuelma’atti, Electron. Lett., 1992
Explicit analytical solution? J.N. Pinbley, IEEE TED 1992
𝐽 = 𝐽𝑠 𝑒 𝑞𝑉Τ𝑘𝑇 − 1
Assumptions for

• Flat imref s & difference equal to qV → Negligible voltage drop in the neutral regions
• Low-level injection
• Minority carrier current is primarily diffusive
𝐸𝐶
• Semi-infinite lengths
𝐹𝑝 = 𝐹𝑛 𝑞𝑉 𝐹𝑛 𝐹𝑝 = 𝐹𝑛
𝐹𝑝
→ Negligible recombination in depletion region
𝐸𝑉
 Expression valid only under some specific boundary conditions
𝑛𝑝 = 𝑛𝑖2 𝑒 𝑞𝑉 Τ𝑘𝑇

𝑛𝑖2 𝑞𝑉Τ𝑘𝑇
𝛿𝑝(𝑥𝑜𝑛 ) = 𝑒 −1
𝑁𝐷
𝐷𝑝 − 𝑥−𝑥𝑜𝑛
൘𝐿 − 𝑥−𝑥𝑜𝑛
𝐽𝑝𝑛 𝑥 =𝑞 𝛿𝑝𝑛 (𝑥𝑜𝑛 ) 𝑒 𝑝
൘𝐿
𝐽 ≈ 𝐽𝑝𝑛 𝑥𝑜𝑛 + 𝐽𝑛𝑛 −𝑥𝑜𝑝 𝐿𝑝 𝛿𝑝𝑛 𝑥 = 𝛿𝑝𝑛 (𝑥𝑜𝑛 ) 𝑒 𝑝

𝐷𝑝 𝑛𝑖2 𝐷𝑛 𝑛𝑖2
𝐽≈𝑞 + 𝑒 𝑞𝑉Τ𝑘𝑇 − 1
𝐿𝑝 𝑁𝐷 𝐿𝑛 𝑁𝐴
𝐷𝑝 𝑛𝑖2 𝑞𝑉Τ𝑘𝑇
𝐽𝑝𝑛 𝑥𝑜𝑛 ≈𝑞 𝑒 −1
𝐿𝑝 𝑁𝐷

𝐷𝑛 𝑛𝑖2 𝑞𝑉Τ𝑘𝑇 𝐷𝑝 𝑛𝑖2 𝐷𝑛 𝑛𝑖2


𝐽𝑛𝑝 −𝑥𝑜𝑝 ≈𝑞 𝑒 −1 𝐽≈𝑞 + 𝑒 𝑞𝑉Τ𝑘𝑇 − 1
𝐿𝑛 𝑁𝐴 𝐿𝑝 𝑁𝐷 𝐿𝑛 𝑁𝐴

𝐽𝑝 −𝑥𝑜𝑝 = 𝐽𝑝𝑛 𝑥𝑜𝑛 + 𝐽𝑅


𝐽

𝐽𝑝 𝑥 𝐽𝑛 𝑥 𝐽 = 𝐽𝑛 −𝑥𝑜𝑝 + 𝐽𝑝 −𝑥𝑜𝑝
××
× 𝐽 = 𝐽𝑛 −𝑥𝑜𝑝 + 𝐽𝑝𝑛 𝑥𝑜𝑛 + 𝐽𝑅
𝐽𝑝 𝑥
𝐽𝑛 𝑥
𝐷𝑝 𝑛𝑖2 𝐷𝑛 𝑛𝑖2
−𝑥𝑜𝑝 𝑥𝑜𝑛 𝐽=𝑞 + 𝑒 𝑞𝑉Τ𝑘𝑇 − 1 + 𝐽𝑅
𝑥 𝐿𝑝 𝑁𝐷 𝐿𝑛 𝑁𝐴
Recall: Recombination
• SRH – Important recombination mechanism for materials such as Si (indirect BG)

Net recombination rate


𝑛𝑝 − 𝑛𝑖2
𝑅𝑛𝑒𝑡 =
𝐸𝑡 − 𝐸𝑖
𝜏 𝑛 + 𝑝 + 2𝑛𝑖 𝑐𝑜𝑠ℎ
𝐸𝑡 − 𝐸𝑖 𝑘𝑇
𝑥=
𝑘𝑇
𝑥 ↓ ⇒ 𝑐𝑜𝑠ℎ𝑥 ↓ ⇒ 𝑅 ↑ 𝐸𝑡 − 𝐸𝑖 ↓ ⇒ 𝑅 ↑

Recombination rate is high when 𝐸𝑡 is close to 𝐸𝑖

For 𝑥0𝑛
𝑝𝑛 − 𝑛𝑖2
𝐸𝑡 ≈ 𝐸𝑖 ⇒ 𝑐𝑜𝑠ℎ𝑥 ≈ 1 𝑅𝑛𝑒𝑡 ≈ 𝐽𝐺𝑅 = 𝑞 න 𝑅𝑛𝑒𝑡 𝑑𝑥
𝜏 𝑛 + 𝑝 + 2𝑛𝑖 −𝑥0𝑝
Reverse Bias

Wide transition region (width 𝑊) ⇒ there can be significant opportunities for both 𝐺 and 𝑅
But, 𝑛 and 𝑝 are very small in reverse bias
Approximation: neglect 𝑛 and 𝑝 – i.e., zero recombination

𝑥0𝑛
𝑝𝑛 − 𝑛𝑖2 𝑛𝑖
𝑅−𝐺 = 𝐺= ⇒ Generation rate is constant 𝐽𝐺𝑅 = 𝑞 න 𝑅𝑑𝑥
𝜏 𝑛 + 𝑝 + 2𝑛𝑖 2𝜏 −𝑥0𝑝

1/2
−𝑞𝑛𝑖 𝑊 2𝜖 𝑉𝑏𝑖 − 𝑉 𝑁𝐴 + 𝑁𝐷
𝐺 − 𝑅 current density will be 𝐽𝐺𝑅 = −𝑞𝐺𝑊 = 𝑊=
2𝜏 𝑞 𝑁𝐴 𝑁𝐷

𝐷𝑝 𝑛𝑖2 𝐷𝑛 𝑛𝑖2
𝐽𝑑𝑖𝑓𝑓 ≈𝑞 + 𝑒 𝑞𝑉Τ𝑘𝑇 − 1 Typically, 𝐽𝐺𝑅 ≫ 𝐽𝑑𝑖𝑓𝑓 ~ 3-4 orders
𝐿𝑝 𝑁𝐷 𝐿𝑛 𝑁𝐴
Forward Bias

𝑛 𝑥 = 𝑛𝑛𝑜 𝑒 − 𝐸𝐶 𝑥 −𝐹𝑛 /𝑘𝑇 𝑝 𝑥 = 𝑝𝑝𝑜 𝑒 − 𝐹𝑝−𝐸𝑉 (𝑥) /𝑘𝑇 𝑛𝑝 = 𝑛𝑖2 𝑒 𝑞𝑉Τ𝑘𝑇

𝑞(𝑉𝑏𝑖 − 𝑉)
𝑝𝑛 − 𝑛𝑖2 𝑛𝑖2 (𝑒 𝑞𝑉Τ𝑘𝑇 − 1) 1 𝐸𝐶
𝑅−𝐺 = =
𝜏 𝑛 + 𝑝 + 2𝑛𝑖 𝜏 𝑛 + 𝑝 + 2𝑛𝑖 𝐹𝑛

𝐹𝑝
With reasonable forward bias levels, say, 𝑞𝑉 > 3𝑘𝑇,
recombination current is large compared to 𝐸𝑉
generation current (since there are many 𝑒 − s and ℎ+ s)
𝑥0𝑛
𝐽𝐺𝑅 = 𝑞 න 𝑅𝑑𝑥
𝑛𝑖2 𝑒 𝑞𝑉Τ𝑘𝑇 𝑛𝑖2 𝑞𝑉Τ𝑘𝑇 𝑛𝑖2 𝑒 𝑞𝑉Τ𝑘𝑇 −𝑥0𝑝
𝑅≈ 𝑝= 𝑒 𝑅≈
𝜏 𝑛+𝑝 𝑛 𝑛𝑖2 𝑞𝑉Τ𝑘𝑇
𝜏 𝑛+ 𝑒
𝑛
𝑅 Where in the junction is 𝑅 the greatest ?
Set derivative to zero

𝑛𝑖2 𝑒 𝑞𝑉Τ𝑘𝑇
𝑅≈
𝑛𝑖2 𝑞𝑉Τ𝑘𝑇
𝜏 𝑛(𝑥) + 𝑒
𝑛(𝑥)
−𝑥𝑜𝑝 𝑥𝑜𝑛 𝑥
𝑥0𝑛
𝑛𝑖 𝑒 𝑞𝑉Τ2𝑘𝑇
𝑅 will be maximum at an x where 𝑛 = 𝑝 = 𝑒 𝑞𝑉Τ2𝑘𝑇 𝑅𝑚𝑎𝑥 = 𝐽𝑟𝑒𝑐 = 𝑞 න 𝑅𝑑𝑥
2𝜏 −𝑥0𝑝
From 𝑅𝑚𝑎𝑥 , 𝑅 decreases rapidly on both sides
𝑞𝑛𝑖 𝜋𝑘𝑇
Net 𝐺 − 𝑅 current will be 𝐽𝐺𝑅 = 𝐽𝐺𝑅𝑜 𝑒 𝑞𝑉/2𝑘𝑇 −1 𝐽𝐺𝑅𝑜 =
2𝜏 𝑞ℇ(0)

(derivation not included)


𝐽𝐺𝑅 ≈ 𝐽𝐺𝑅𝑜 𝑒 𝑞𝑉/2𝑘𝑇 − 1 𝐽 ≈ 𝐽0 𝑒 𝑞𝑉Τ𝑘𝑇 − 1

𝐽 = 𝐽0 𝑒 𝑞𝑉Τ𝑘𝑇 − 1 + 𝐽𝐺𝑅𝑜 𝑒 𝑞𝑉/2𝑘𝑇 − 1 ≈ 𝐽0 𝑒 𝑞𝑉Τ𝑘𝑇 + 𝐽𝐺𝑅𝑜 𝑒 𝑞𝑉/2𝑘𝑇 If 𝑞𝑉 > 3𝑘𝑇

𝐽 = 𝐽𝑠 𝑒 𝑞𝑉Τ𝜂𝑘𝑇 − 1
Between 1 & 2
Two exponents
Function of both 𝐽0 and 𝐽𝐺𝑅𝑜

• Large voltages – Diffusion current dominates ⇒ 𝐺 − 𝑅 could be neglected


• Small voltages – Exponents become less important and their pre-factors dominate
Thus, in this case, 𝐺 − 𝑅 component (predominantly R) dominates
• Mid-range: Both will be important

Assignment: For previous example, compute diffusion and 𝐺 − 𝑅 currents at 0.57V, and 0.1V.
Compare relative magnitudes and verify the assumption to neglect 𝐺 − 𝑅 component.
Edge of the Junction

𝜕𝑝𝑛 𝜕𝛿𝑝𝑛
𝐽𝑝𝑛 𝑥 ≈ −𝑞𝐷𝑝 = −𝑞𝐷𝑝
𝜕𝑥 𝜕𝑥

𝑝𝑛 (𝑥) 𝜕𝛿𝑝𝑛 1 𝜕𝐽𝑝𝑛 1 𝜕𝐽𝑝𝑛 𝛿𝑝𝑛


=− + 𝐺𝑝 − 𝑅𝑝 = 0 − − =0
𝜕𝑡 𝑞 𝜕𝑥 𝑞 𝜕𝑥 𝜏𝑝
𝑝𝑜𝑛
𝑥𝑜𝑛 𝑥 𝜕 2 𝛿𝑝𝑛 𝛿𝑝𝑛 𝜕 2 𝛿𝑝𝑛 𝛿𝑝𝑛
𝐷𝑝 = = 2
𝜕𝑥 2 𝜏𝑝 𝜕𝑥 2 𝐿𝑝
𝑛𝑖2 𝑞𝑉Τ𝑘𝑇
𝛿𝑝𝑛 (𝑥𝑜𝑛 ) = 𝑒 −1
𝑁𝐷 𝑥−𝑥𝑜𝑛
൘𝐿
− 𝑥−𝑥𝑜𝑛
൘𝐿
− 𝑥−𝑥𝑜𝑛
൘𝐿
𝛿𝑝𝑛 𝑥 = 𝐴 𝑒 𝑝 +𝐵𝑒 𝑝 =𝐵𝑒 𝑝

3. Edge of the junctions 𝐵 = 𝛿𝑝𝑛 (𝑥𝑜𝑛 )


• Assume that minority carrier current is primarily by diffusion
• Assume that p- and n-sides are semi-infinite ⇒ 𝐴 = 0
Short - / Narrow - Base Diode
−𝑥𝑜𝑝 𝑥𝑜𝑛
𝑥−𝑥𝑜𝑛 − 𝑥−𝑥𝑜𝑛
൘𝐿 ൘𝐿
𝛿𝑝𝑛 𝑥 = 𝐴 𝑒 𝑝 +𝐵𝑒 𝑝

𝑝 𝑛+
Boundary Conditions
𝑉 𝑛
𝑛𝑖2 𝑞𝑉Τ𝑘𝑇
𝑙 𝑛 ≪ 𝐿𝑝 𝑥 = 𝑥𝑜𝑛 𝛿𝑝𝑛 (𝑥𝑜𝑛 ) = 𝑒 −1
𝑁𝐷
𝑥 = 𝑙𝑛 𝛿𝑝𝑛 (𝑙𝑛 ) = 0
𝛿𝑝𝑛 𝑥𝑜𝑛 = 𝐴 + 𝐵
𝑙𝑛 −𝑥𝑜𝑛 − 𝑙𝑛 −𝑥𝑜𝑛
൘𝐿 ൘𝐿
0=𝐴𝑒 𝑝 +𝐵𝑒 𝑝

𝑒− 𝑙𝑛 −𝑥𝑜𝑛 /𝐿𝑝
𝑒 − 𝑙𝑛 −𝑥𝑜𝑛 /𝐿𝑝
𝐴 = 𝛿𝑝𝑛 𝑥𝑜𝑛 − 𝑙𝑛 −𝑥𝑜𝑛 /𝐿𝑝 𝑙𝑛 −𝑥𝑜𝑛 /𝐿𝑝
= −𝛿𝑝𝑛 𝑥𝑜𝑛
𝑒 −𝑒 2sinh 𝑙𝑛 − 𝑥𝑜𝑛 /𝐿𝑝
𝑙𝑛 −𝑥𝑜𝑛 /𝐿𝑝
𝑒 𝑒 𝑙𝑛 −𝑥𝑜𝑛 /𝐿𝑝
𝐵 = 𝛿𝑝𝑛 𝑥𝑜𝑛 = 𝛿𝑝𝑛 𝑥𝑜𝑛
𝑒− 𝑙𝑛 −𝑥𝑜𝑛 /𝐿𝑝
−𝑒 𝑙𝑛 −𝑥𝑜𝑛 /𝐿𝑝
2sinh 𝑙𝑛 − 𝑥𝑜𝑛 /𝐿𝑝
−𝑥𝑜𝑝 𝑥𝑜𝑛
𝑛𝑖2 𝑞𝑉Τ𝑘𝑇
𝛿𝑝𝑛 (𝑥𝑜𝑛 ) = 𝑒 −1 𝛿𝑝𝑛 (𝑙𝑛 ) = 0
𝑁𝐷
𝑝 𝑛+
𝑉 𝑛 𝑥−𝑥𝑜𝑛
൘𝐿
− 𝑥−𝑥𝑜𝑛
൘𝐿
𝑙𝑛 𝛿𝑝𝑛 𝑥 = 𝐴 𝑒 𝑝 +𝐵𝑒 𝑝

𝐷𝑝 𝑛𝑖2 𝑞𝑉Τ𝑘𝑇 𝑙𝑛 − 𝑥𝑜𝑛 1 𝑦2


𝐽𝑝𝑛 𝑥𝑜𝑛 =𝑞 𝑒 − 1 coth coth 𝑦 ≈ 1+ −⋯
𝐿𝑝 𝑁𝐷 𝐿𝑝 𝑦 3

𝐷𝑝 𝑛𝑖2 𝑞𝑉Τ𝑘𝑇 𝑙𝑛 − 𝑥𝑜𝑛 1 𝑦2


𝐽𝑝𝑛 𝑙𝑛 =𝑞 𝑒 − 1 csch csch 𝑦 ≈ 1− +⋯
𝐿𝑝 𝑁𝐷 𝐿𝑝 𝑦 6

𝐷𝑝 𝑛𝑖2 𝑞𝑉Τ𝑘𝑇 (𝑙𝑛 −𝑥𝑜𝑛 )2


𝐽𝑝𝑛 𝑥𝑜𝑛 ≈𝑞 𝑒 −1 1+
(𝑙𝑛 − 𝑥𝑜𝑛 ) 𝑁𝐷 3𝐿2𝑝

𝐷𝑝 𝑛𝑖2 𝑞𝑉Τ𝑘𝑇 (𝑙𝑛 −𝑥𝑜𝑛 )2


𝐽𝑝𝑛 𝑙𝑛 ≈𝑞 𝑒 −1 1−
(𝑙𝑛 − 𝑥𝑜𝑛 ) 𝑁𝐷 6𝐿2𝑝
−𝑥𝑜𝑝 𝑥𝑜𝑛

𝑝 𝑛+
𝑉 𝑛
𝑙𝑛

𝐷𝑝 𝑛𝑖2 𝑞𝑉Τ𝑘𝑇 (𝑙𝑛 −𝑥𝑜𝑛 )2


𝐽𝑝𝑛 𝑥𝑜𝑛 ≈𝑞 𝑒 −1 1+
(𝑙𝑛 − 𝑥𝑜𝑛 ) 𝑁𝐷 3𝐿2𝑝

𝐷𝑝 𝑛𝑖2 𝑞𝑉Τ𝑘𝑇 (𝑙𝑛 −𝑥𝑜𝑛 )2 Total current is constant at any point


𝐽𝑝𝑛 𝑙𝑛 ≈𝑞 𝑒 −1 1−
(𝑙𝑛 − 𝑥𝑜𝑛 ) 𝑁𝐷 6𝐿2𝑝

𝐷𝑝 𝑛𝑖2 𝑞𝑉Τ𝑘𝑇 (𝑙𝑛 −𝑥𝑜𝑛 )2


𝐽𝑝𝑛 𝑥𝑜𝑛 − 𝐽𝑝𝑛 𝑙𝑛 =𝑞 𝑒 −1
(𝑙𝑛 − 𝑥𝑜𝑛 ) 𝑁𝐷 2𝐿2𝑝

Difference = Electron current flowing into the base to offset the recombination of holes

Вам также может понравиться