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RESEARCH PROPOSAL

NANOCRYSTAL STRUCTURE TRANSITION OF SILICON CARBIDE

THIN FILM GROWN BY VERY HIGH FREQUENCY PLASMA
ENHANCED CHEMICAL VAPOUR DEPOSITION

Prepared by
Muhamad Muizzudin bin Azali
MSC163015

Supervisor
Dr. Abd Khamim bin Ismail
Co-Supervisor
Dr. Muhammad Firdaus bin Omar

Universiti Teknologi Malaysia

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CHAPTER 1

INTRODUCTION

1.1 Backgroud of Research

Nowadays, nanostructure material has been a great interest of fabrication as their nanoscale
of sizing and dimension. Chemical and physical properties of nanostructure material is
significantly different from those bulk and microsize material [1]. The physical properties
enhanced when the material scale down to nanoscale and it can be shown by the previous studies
[2]–[4]. It makes the nanostructure material received more attention from the worldwide
researcher. One of the nanostructure material that most popular is the silicon (Si) based material
since the availability of semiconductor production processes are mostly corresponding to the
technique used to fabricate the material.

Silicon carbide (SiC) is one of the nanomaterial of silicon based which get high interest as
it becomes the essential material for micro and nanoelectromechanical system (MEMS and
NEMS) sensors [5]–[9] for harsh environments specifically due to its optical, mechanical,
excellent electrical properties with wide band gap (3 eV), high breakdown field strength that is 10
times higher than Si and low intrinsic carrier concentration [6], [10]. SiC also is a well-known
material that has specialty on excellent thermal conductivity and high resistance to shock [11]. In
 2

addition, crystalline SiC films most optimal used for optoelectronic [12], [13] and ultra-violet
wavelength emissions that operate at high power level, high temperature and abrasive
environments because of its special properties of wide band gap (Eg), great thermal properties and
large bonding energy [14]. The wide band gap would minimizing minority carrier effect at high
temperature [15].

Many semiconductor devices used hydrogenated amorphous SiC (a-SiC:H) films as their
composite material [16]. The examples of semiconductor devices are solar cell [17], [18], light
emitting diode, colour sensor [19], photo-modulator devices [20] and metal insulator
semiconductor structures [21], [22]. SiC also biocompatible with blood as coating material of
artificial joints [11].

In the plasma enchanced chemical vapour deposition (PECVD) technique, silane (SiH4)
gas is the most preferred source for Si precursor. Majority of previous study, methane (CH4) gas
as C precursor has been used for making SiC thin films. Hydrogen and argon are usually used as
carrier gas [23]–[25]. The ratio of SiH4:CH4 and substrate temperature are important for the growth
rate of SiC thin films. PECVD uses higher frequency than the conventional (13.56MHz) and it can
be considered as a very high frequency PECVD (VHF-PECVD). Recently, the higher excitation
frequency (fexc) is used for growth of SiC thin films because of their several advantageous such as
grown with high deposition rate, deposit with good quality, higher electron density, lower plasma
potential and reduced ion bombarded [26]–[28].

J.Huran et al (2013) reported the growth of a-SiC:H films by PECVD using CH4 and SiH4
as reactants. The substrate temperature was varied (200oC, 250oC, 300oC, 350oC). The structural
properties were investigated by RBS, ERD, IR and Raman methods. This study found that the
concentration of hydrogen decreased with the increased of deposition temperature. The deposition
temperature also give small influenced on change value of refractive index. However, the
frequency used is not mentioned in this study [24].

I. Torres (2011) had produced a-SiCx:H thin films deposited on a c-Si double-sided
polished substrate of a p-type with 300µm thickness. The chamber pressure used was 375 mTorr
 3

with deposition temperature 400oC and 13.56 MHz radio frequency with power 10 mWcm2. The
thin films were compared with doped (phosphorous) and undoped. The temperature was increased
from 27oC until 900oC. From that parameter, this study concluded that range temperature of 27oC
to 800oC exhibit the same behavior (as amorphous). At 900oC, the thin film was shown the
crystalline orientation by XRD. Although, the phosphorous-doped accelerated the crystallization
in the films but the undoped thin films by very high frequency PECVD would give less cost [29].

Y.T Kim et al (2005) had synthesized the a-Si:H and a-SiC:H on Si substrate using a
capacitevely coupled RF PECVD system. The substrate temperature was kept at 150oC. The RF
power was varied from 50 to 400W. For a-SiC:H, SiH4 and CH4 were utilized as the precursor gas.
The annealing process was done for a-SiC:H films. It showed that the crystallinity of a-SiC:H films
formed above 900oC. Thus, the forming of SiC crystallity depends on the annealing process with
the low frequency used [23].

C.Summonte et al (2004) used VHF-PECVD to fabricate a-SiC:H alloys with SiH4 and
CH4 as precursors. The 100MHz was used with flow rates of SiH4 and CH4 were 8 sscm and 25
sscm respectively. The result of this study shows the high amount of SiC bond concentration on
that sample. However, the result not shows the structural properties of the material [28]. Lei Liu
et al (2011) had used PECVD of 13.56MHz to deposit SiC thin films. At 900oC, there is no peak
shown. However, at 1200oC, there are peaks at 33.75o and 60.16o indicates to SiC oriented
crystallization [30]. However, the high temperature with low frequency is needed to grow
nanocrystal SiC.

Dong S. Kim et al (1994) reported that the hydrogen content of a-SiC:H films decreased
as the annealing temperature exceeded 400oC. The a-SiC:H films was deposited by PECVD
(13.56MHz). The annealing temperature started from 200oC until 400oC. Guozhi Wen et al (2016)
reported that crystalline β-SiC (1 1 1) QDs had been growth by 900oC annealed temperature and
appeared at 33.9o on the XRD spectra [31].
 4

From the previous study, majority researcher used the conventional PECVD (13.56MHz)
[32]–[35] with SiH4 and CH4 as precursor gas to deposit SiC thin film. The highest frequency from
the previous research was 100MHz.

In this research, the VHF-PECVD is used instead of conventional PECVD to grow SiC
thin films of high quality with less defects. The temperature also should be varied until 300oC to
observe the crystallinity of SiC thin film on Si substrate. In industry, the production of SiC
electronic devices depend on the structure of the SiC thin films. It can be crystalline, amorphous
and polymorphs. Different SiC polytypes (6H-SiC, 4H-SiC and 3C-SiC) of the piezoresistivity
have been studied since these materials are advantageous on thermal stability and chemical
inertness which allow the preservation of piezoresistivity at harsh condition [36]. The crystalline
of SiC structure transition can be formed by the variation of temperature and the frequency used.

1.2 Problem Statement

Silicon Carbide (SiC) is identified as the great material for high power, high thermal
conductivity, wide band gap, high electron mobility and high-saturated electron velocity. SiC has
inherent outstanding mechanical and chemical properties that make it a material of great interest
for mechanical structures in micro and nanoelectromechanical system (MEMS and NEMS)
applications.

Recently, SiC thin films was grown by various method such as hot wire chemical vapour
deposition (HWCVD) [37], chemical vapour deposition (CVD), gas-source molecular beam
epitaxy (MBE), electron cyclotron resonance (ECR) plasma [38] and many more. Crystalline SiC
films usually can be deposited by high temperature of CVD technique (up to 1300 oC), but the
limitation of Si based technology decrease their compatibility [39]. Thus, the VHF-PECVD
 5

method is the high interest as it uses lower temperature and higher frequency (above 13.56MHz)
to deposit the high quality of SiC compared to other method.

Previous study used conventional PECVD (13.56MHz) with high annealed temperature to
grow a-SiC:H thin films. The higher amount of hydrogen give less performance of MEMS device
as reduce the Q factor. The lower frequency of PECVD needs high temperature to grow high
crystallinity of SiC thin films. The process of annealing boost the process of crystallinity of SiC
thin films. However, the annealed temperature until 1200oC is very high and affect the thin films
with high defect. The low temperature is very important from the point of view of device
integration. The synthesis of low temperature deposited highly conductive SiC thin films has been
a goal of many research groups [40].

In this study, the VHF-PECVD with maximum frequency 200MHz is used to deposit the
SiC thin films as none researcher growth it using PECVD with higher than 150MHz with SiH4 and
CH4 as precursor gas. The lower deposition temperature was used (200oC to 350oC) to grow the
SiC thin films. The good quality and high rate of SiC deposition is expected by this range of
temperature compared to other method. Structural properties within this parameter have not
reported yet. The morphology and crystalline transition will be analyzed and discussed.

1.3 Research Objectives

i. To determine the crystal orientation and the polytypes transition of SiC thin films
with the variation of deposition frequency and temperature.
ii. To determine the crytallinity of the SiC thin films by using Raman Spectroscopy
and XRD.
iii. To characterize the morphology properties of SiC thin films by using AFM.
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1.4 Scope of Research

SiC thin films on Si substrate will be grown by VHF-PECVD method. SiH4 and CH4 gases
are used as precursors and argon as the carrier gas. The power density, flow rate of gas and pressure
will be kept constant. The deposition temperature will be set in range of 200oC to 350oC. The
frequency will also be varied until 200 MHz to grow the SiC thin films. The deposition time will
be set at 900 seconds and the pressure upon the deposited SiC thin films is observed. The
morphology and structural properties are characterized by Raman Spectroscopy, X-Ray
Diffraction, Atomic Force Microscopy and Scanning Transmission Electron Microscopy to
observe the transition of atomic structure and determine the crystallinity of the SiC thin films.

1.5 Significance of Research

This research is to investigate the crystalline properties of the SiC thin films. The
hydrogenated amorphous SiC (a-SiC:H) is mostly used in semiconductor device such as limiting
emitter diode, low cost production for photovoltaic application [41] and photoelectrode [42]. The
crystalline of SiC thin films is important for application in MEMS and NEMS. The elimination of
hydrogen is important to increase the performance of MEMS devices. From this research, the
understanding of the crystal transition and the polytypes of SiC thin films would be enhanced.
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1.6 Proposal Outline

Chapter 1 is about the previous works that are related to this research. The problem
statements, objectives and scope of research are also presented. In Chapter 2, literature reviews
that are related with this research are discussed. This chapter covers the conventional method to
grow SiC thin films, the fundamental of PECVD technique and the precursor gases used by
previous researchers in the growth of SiC thin films. Chapter 3 covers the methodology which
included to synthesize the SiC thin films, the setup of VHF-PECVD machine and characterization
techniques that used to observe the morphology and structural properties of SiC thin films. Chapter
4 discusses about the preliminary results of Raman Spectroscopy and XRD technique. End of this
chapter showed the timeline and milestone of research activities.
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CHAPTER 2

LITERATURE REVIEW

2.1 Introduction

This chapter will explain the properties of SiC and the fundamental of chemical vapour
deposition. The present of plasma in the chemical vapour deposition also be discussed further. In
addition, an overview of the characterization method of SiC thin films is introduced.

2.2 Thin Films

A range of thickness layer of material from a nanometer (monolayer) to certain micrometer

(multilayer) is a thin films. There are the usage of thin films at several application fields such as
optics (reflection coating for mirrors), chemistry (protection against corrosion), mechanics
(reduction of friction) and electricity (resistors, capacitors and semiconductors). In science and
technology, the thin films plays the great role in the development devices. The development
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devices included from the energy-efficient displays to energy-harvesting and storage (solar cell,
fuel cell and super capacitors) [43], [44].

Thin films can be fabricated by various techniques. The thin films techniques can be
classified into two groups; physical vapour deposition (PVD) and chemical vapour deposition
(CVD). Figure 2.1 shows the classification of thin films fabrication technique. Table 2.1 shows
the comparison methods to grown SiC thin films.

Figure 2.1: Classification of thin films fabrication technique [43]

Table 2.1: Comparison methods to grow SiC thin films [47]

CVD PECVD Sputtering

Cost Fair Fair Fair
Uniformity Fair Fair Fair
Substrate versatility Good Very good Very good
Stress control Poor Very poor Good
Throughput Varies Very good Fair
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2.3 Silicon Carbide (SiC)

Silicon carbide (SiC) is the stable compound that made up of silicon and carbon atom [45].
In 1824, the first SiC was discovered by Jöns Jacob Berzelius [46]. SiC is the one of the superior
semiconductor material with highly suitable for devices to operate at high power, high frequency
and high temperature. Many researcher contend that SiC as the important and popular materials
for power electronic devices. SiC also popular and high interest for microelectronic and micro
electro mechanical systems (MEMS) application because it has intrinsic properties [47]. Schottky
barrier diodes was the first power electronic device based on SiC. SiC also has properties of wide
bandgap semiconductor material that makes it high breakdown electric field strength (2.0 X 107
cm/sec), high saturated drift velocity and high thermal conductivity [46].

SiC has saturated drift velocity twice than Si; 2 X 107 cm/sec [48]. The great value of high
saturated drift velocity give advantage to obtain as high channel current as possible for microwaves
devices. Thus, it makes SiC suitable for high gain solid state devices. SiC material has very high
thermal conductivity compared to other semiconductor. The value of thermal conductivity SiC is
4.9 W/(cm-K). All condition of SiC (doped crystal) give high value of thermal conductivity above
4 W/(cm-K) even at room temperature. For MEMS applications, SiC based materials has capability
to face the temperature up to 300oC compared to Si based materials [45]. The high thermal
conductivity material properties is one of the important condition of high frequency and high
temperature devices. As the temperature increase, the device leads to change in physical properties
which effect the device operating function [49].

The structure of SiC crystal is tetrahedron which consists of four carbon atom with silicon
atom at the center with strong sp3 bonds. The distance between carbon-silicon atoms and carbon-
carbon atoms are 1.89Å and 3.08Å respectively. Figure 2.2 shows the tetrahedron building block
of SiC.
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Figure 2.2: Tetrahedron building block of SiC [49]

2.3.1 Amorphous Silicon Carbide (a-SiC)

An amorphous is termed as the solid that lacking of long range atomic order in the films
and thus is not in crystal mode. The amorphous silicon carbide (a-SiC:H) maintains the tetrahedron
building block but the slight varies in bond length within the atomic make it as short range atomic
order [50]. Table 2.2 shows the SiC bonds and the variation of the bond length. The variations of
the bond length lead to the disorder network. Thus, number of dangling bonds is also highly
observed in the network. The applications of amorphous SiC include as protective coatings against
corrosion, moisture, etching and abrasion or for medical application [50].

Table 2.2: Bond of SiC and the length of the bond [50]

Bond Length of bond (10-1nm) Bond Length of bond (10-1nm)

C-C 1.54 C=C 1.33
C-H (sp3) 1.09 C=C (graphite) 1.42
C-Si 1.87 C=C 1.21
Si-Si (in c-Si) 2.35 Si-H 1.48
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2.3.2 Crystalline Silicon Carbide

Silicon carbide has been reported to consist of more than 300 crystal sturctures (polytypes)
with equal parts of silicon and carbon atoms [51]. The 4H-SiC and 6H-SiC are the most suitable
physical and electrical properties that used for the fabrication of high frequency and high power
electronic devices [46], [51]. The SiC exhibits a hexagonal and cubic frame of polytypes. The
stacking order of silicon and carbon atoms arrangement are according to the variation of SiC
polytypes structures. The dominant polytypes of SiC structure found by the researcher are
hexagonal frames (wurtzite); 2H-SiC, 4H-SiC and 6H-SiC. The hexagonal frames also called α-
SiC. The other of polytypes is one cubic frame (zinc-blende), 3C-SiC which known as β-SiC [52].
Figure 2.3 shows the stacking order of the 3C-SiC frame that illustrated as spheres of the same
radius and the radii touching. Each polytypes have denoted letter as A, B and C to represent a
number of SiC bilayers that stacked each other and varying different positions. The stacking
starting with first layer of “A” atoms, followed by a layer of atoms on “B” positions. The top of
that covered with a layer of atoms on “C” positions.

Figure 2.3: Staking order of 3C-SiC polytypes [87]

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All of the polytypes of SiC are referred to the hexagonal coordinate that consisting of three
a planes (a1, a2, and a3) and c-axis coordinate. C-axis is the direction of the hexagonal staking order
of polytypes with perpendicular of the three a planes. The 1200 angle between each a plane [52].
Figure 2.4 shows the miller indices indicates the hexagonal frame.

a1

120o
120o a2

120o

a3

Figure 2.4: Miller indices indicates the hexagonal frame

The cubic polytype in SiC is 3C-SiC has stacking sequence ABCABC….The hexagonal
polytype of 2H-SiC has simplest hexagonal structure which is ABAB…The others hexagonal
polytpe of SiC are 6H-SiC and 4H-SiC have stacking sequences of ABCACBABCACB… and
ABCBACB… respectively [53]. According to Ramsdell notation, the number before the letter
serve as the number of layers along the c-axis before the repetitions of the same sequences of the
stacked order. The letter represented as the bravais lattice [54] . Figure 2.5 shows the stacking
order of SiC polytypes.
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Figure 2.5: Stacking order of SiC polytypes [88]

2.4 Chemical Vapour Deposition (CVD) Method

Chemical vapour deposition is one of the chemical process to produce high quality, less
defect of solid materials with high performance [55]. This process is usually used in the
semiconductor industry to produce thin films [43]. Typically, the wafer or substrate is exposed to
the several types of precursor gases that react to produce solid product. The results will show the
uniform thickness, high density, high perfection of structure and good optical and electronic
properties [56]. Chenguang Lu et al (2006) used this method to produce single walled carbon
nanotubes (SWNTs). In this report, they reported that the CVD process used give high productivity
and desired atomic structures of the solid SWNTs [57].

The main process of CVD occurs inside the chamber. The high temperature of the chamber
enhances the thermal reaction of the gases and the chemical reaction will take place. Therefore,
 15

the solid product deposited on the substrate or wafer. The chemical reaction of the gases can be
expressed below [56]:

AXgas + BYgas = ABsolid + XYgas

(2.1)

It shows that, the AXgas react with BYgas to form deposition of solid and gas which are ABsolid and
XYgas espectively. The XYgas is the by product that will be removed by gas flow through the
reaction chamber. The variation of temperature, gas mixture composition and type of substrate will
give different properties of solid deposition. Figure 2.6 below shown the schematic of the CVD
process.

Figure 2.6: Schematic of the CVD [89]

process
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2.5 Plasma Enhanced Chemical Vapour Deposition (PECVD) Theory

PECVD is a great and commercial process used to deposit thin films from a gas state to a
solid state on a wafer or substrate. Amorphous, polymorphous and microcrystalline of silicon films
are successfully grown by conventional PECVD in a coupled radio frequency glow discharge
reactor [58]. The conventional CVD method have limitation on their process equipment. It needs
high temperature to proceed the chemical reaction on the chamber. Thus, the improvements is
needed and the method was overcome by introducing plasma to enhance the deposition. Therefore,
the existence of plasma give important aspect to break gas molecule and proceed the chemical
reaction at lower temperature than the conventional CVD method. For example, the conventional
CVD needs 700oC to 900oC of deposition temperatures to deposit silicon nitride films. On the
other hand, PECVD required only 250oC to 350oC of deposition temperature to deposit similar
films [59].

PECVD usually used low pressure to generate plasma inside the chamber (< 10Torr). E.
Bertran et al (2000) used 30 Pa pressure as the condition for depositing the hydrogenated
nanostructured silicon [60]. Subjecting gases to the high temperature or strong electric or magnetic
fields would generating plasma. The plasma generated consists of ions, electrons and neutral
species. In thermal plasma (high temperature), the ions, electrons and neutral species are in
thermodynamic equilibrium (same temperature) while the electrons and ions are more genetic
compared to neutral species in “cold” plasma (low temperature). The electrons is much higher
temperature than ions and molecules [61]. The “cold” plasma also called nonequilibrium plasma
[62]. PECVD also can be called glow discharge deposition as a partially ionized gases composed
of equal volume concentration (positively and negatively charged) and different concentrations in
ground and exited state [62]. The recombination of free electrons with free ions in plasma will
emit glow discharge.

After the plasma is generated by PECVD, the ground state gases species will undergoes
electron impact dissociation and excitation thus produce reactive species. The collision of free
electron and gas molecules will generate the various reactive species. Thus, the reactive species
 17

will continue and undergoes the diffusion process. This electron bombardment onto substrate to
deposit solid films. Figure 2.7 shows the conventional PECVD diagram.

Figure 2.7: PECVD

[90]

2.5.1 VHF-PECVD

The conventional PECVD usually operates at a frequency of 13.56 MHz to fabricate thin
films inside the chamber. Yihua Wang et al (2001) used a frequency of 13.56 MHz to deposit
hydrogenated amorphous SiC on Si (100) wafer [35]. The higher frequency than the conventional
frequency is considered as the very high frequency (VHF). The VHF-PECVD is used in a long
time ago because of their advantageous. High plasma density and less ion bombardment can be
 18

achieved very good quality and less defects of films. The higher deposition rates also can be
resulted [26].

S. Saripalli (2008) did the research by using VHF-PECVD to deposit microcrystalline

silicon. The deposition rate also increase by using frequency ranging of 13.56 MHz to 70MHz.
Also, the grain size increased from 13nm at 27 MHz to 32nm at 120 MHz by using XRD
measurements [63]. A. Chowdhury et al (2007) said that VHF-PECVD is the most effective
technique. VHF can gave high quality microcrystalline materials by low minimum ion energy.
Medium range frequency of 54.24 MHz is used to deposit high quality nanocrystalline Silicon (Si)
films [64]. Thus, it can tell that VHF-PECVD can deposit high quality nanocrystalline films. A.A.
Howling et al (1992) reported that at constant plasma power 5 Watt, the deposition rate of films
increases from 3.3 Å/s to 10Å/s as frequency increased (13.56 MHz to 70 MHz) [65]. Figure 2.8
shows the deposition rate versus frequency of PECVD.

Figure 2.8: Deposition rate versus frequency of PECVD [65]

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2.5.2 Plasma

Plasma is ionized gas that composed positively and negatively charge with equal charge
density. The freely random motion of particles in plasma usually consists of free electron and ions.
Plasma also categorized as the fourth state of matter after the states of gas, liquid and solid. A lots
of visible matter in the universe is the state of plasma. Stars and all visible interstellar matter prove
that the plasma state is exist as the fourth state. The plasma can be distinguish by two groups; high
temperature plasma (fusion plasma) and low temperature plasma (gas discharge)[66] [67]. The
high temperature plasma also termed as thermal equilibrium plasma. Stars can be the true example
as high temperature is required to form this plasma. 4000 K to ionized cesium (easy to ionized)
and 20,000 K to ionized helium (hard to ionized) [68]. Thermal plasma generated when the gas is
ionized by very high temperature. Thus, the definite number of atoms have been deprived off (at
least one electron) and it becomes positive ions. The existence of “cold” plasma is occurred by
applying electrical and magnetic field to the low pressure gas. Its free electrical charges makes the
plasma differs from other type of gases because of its dependent to electric and magnetic forces.
Plasma can be exist at room temperature in metals and semiconductors as there are free charge
carrier. However, the plasma only can be observed in laboratory vacuum chambers as the
temperature and atmospheric density cannot support the plasma on Earth compared to outer space
(stars). At outer space, plasma generated by the photoionization of hydrogen atoms by starlight. A
density about 1 ion/cm3 makes the ions and electrons cannot be recombined easily after ionized
[69].

The LTE and non-LTE are term used as ‘local thermal equilibrium’ and non-‘thermal local
equilibrium’. LTE implies that the temperature of all species on plasma are same while non-LTE
is vice-versa. The LTE and non-LTE can be related to the condition of pressure. The high gas
pressure usually occur many collisions in the plasma. Therefore it relates to short collision mean
path compared to the discharge length. So that, the temperature is equal and enough energy
exchange between the species. On the other hand, the low pressure give less collision and resulted
long collision mean path compared to the discharge length. Consequently, the temperature of the
 20

plasma species is different due to insufficient energy (0.5 eV – 10.0 eV) [61]. Figure 2.9 shows
the basic plasma reaction.

Figure 2.9: Basic plasma reaction [61]

The basic reaction processes in plasma are ionization and excitation. From the Figure 2.7,
the breakdown of gas (argon), the ionization and excitation process of in plasma which are:

Ar  Ar+ (2.2)
 e-

e- + Ar  Ar+ + 2e- (ionization) (2.3)

e- + Ar  Ar* + e- (excitation) (2.4)

The gas of argon break down into electron and positive ions. The positive ion of argon makes the
secondary of electron emit from the cathode. The emitted electron collide with the positive ion of
argon (excitation and ionization). In addition, the argon ions as well as fast argon atoms
 21

bombarding the cathode resulting to sputtering. Table 2.3 shows the simple reaction occur in
plasma.

Table 2.3: Simple reaction occur in plasma

Type of interaction Electron reaction Reference

Ionization e + N2  N2+ + e + e [91]
Excitation e + H2  H2* + e [92]
Dissociative recombination e + Ne2+  Ne* + Ne [93][94]
Dissociation e + SiH4  e + SiH3 + H [95]
Dissociation attachment e + SiCl4  Cl- + SiCl3 [95]
Dissociative Ionization e + SiH4  2e + SiH3+ + H [96]
Dissociative ionization with e + AX  A* + X+ + 2e [96]
fragment excitation
Dissociative Excitation e + AX  A + X* + e [96]
3 body heavy particle Xe** + Ar + Ar  ArXe* + Ar [97]
2.6 Silicon Carbide thin film deposition
2 body heavy particle Xe* + Xe*  Xe+ + Xe + e [91]

2.6 Growth Mechanisms of SiC Thin Films

Plasma was generated by radio frequency (RF) field with the existence of precursor and
carrier gas inside the chamber of PECVD. Uses of plasma is to promote the decomposition of the
precursor gas into reactive species which the deposition temperature used can be lowered and give
less thermal damage. Silane gas (SiH4) as the precursor gas for the silicon source while methane
gas (CH4) as the precursor gas for carbon source [70]. Argon (Ar) as the carrier gas (inert gas)
provides a non-reactive atmosphere which is needed in growth of silicon. As strong oscillating
 22

electric field is applied across gas mixture inside the chamber, thus plasma is created and the gas
molecules start to dissociate and ionizes which contains electrons, ions and free radicals with high
energy. During process, the electrons and ions gained high kinetic energies which electrons gained
much energy as their light mass. So, the electrons can reach high temperature values (104 – 105 K)
compared to the ions at much less temperature gained (100 – 400oC) [71]. Therefore, excitation to
high energy state of the source gases (SiH4 and CH4) occurred by inelastic collision with energetic
electrons. Thus, it dissociated into radicals (Si, SiH, SiH2, SiH3), ions and more free electrons.

The equations below show the dissociation of silane (SiH4) gas [72] and methane (CH4)
gas after the mixture with inert gas and hydrogen gas (H2) applied with heat source.

SiH4 (g) + H (g)  SiH3 (g) + H2 (g)

SiH3 (g) + H (g)  SiH2 (g) + H2 (g)
(2.5)
SiH2 (g) + H (g)  SiH (g) + H2 (g)
SiH (g) + H (g)  Si (s) + H2 (g)

CH4 (g) + 3H (g)  CH3 (g) + 2H2 (g)

CH3 (g) + H (g)  CH2 (g) + H2 (g)
(2.6)
CH2 (g) + H (g)  CH (g) + H2 (g)
CH (g) + H (g)  C (s) + H2 (g)

Overall process equation:

SiH4 (g) + CH4 (g) + 8H (g)  SiC (s) + 8H2 (g) (2.7)

Finally, the radicals or reactive species diffused on the substrate and migrate on it. The
reaction of the atoms take place while they reached on top of the substrate. Thus, the grown
 23

solidified films achieved. The by-product of the reactions will take out by the reaction output
pump. Figure 2.9.2 shows the process occur inside the PECVD’s chamber.

(a)Mass transport Argon

to the chamber
(e)Mass removal
by output pump

(b)Gas phase reaction

Silicon Hydrogen
(e)Desoption of by-product
(c)Mass transport onto
substrate

(d)Surface adsoption (e)Migration process (f)Film grown

Substrate

Figure 2.9.1: Process occur inside PECVD’s chamber

2.7 Characterization Method

The SiC thin films characterized with the suitable method to study the crystallinity, the
intensity of the crystalline and the bonding of the chemical grown on the sample. The method used
are X-Ray diffraction, Raman Spectrocopy and Atomic Force Microscopy.
 24

2.7.1 X-Ray Diffraction

X-ray diffraction (XRD) is the equipment has long been used to study the crystallinity of
the deposited thin films. X-rays are generated in a cathode ray tube by heating a filament and
produce electrons. A voltage is applied to accelerate the electrons towards a target. The
characteristic x-ray spectra are produced when the inner shell electrons of the target material is
ejected out by the energetic electrons. The crystal thin films could be in a series of parallel plane
with atoms in a periodic lattice position [73]. An X-ray diffractometer is consists of X-ray source,
a mechanical section (goniometer) and a counter. There are two goniometer axes at the horizontal
sample mount X-ray diffractometer [74]. Figure 2.9.2 shows the goniometer axes at X-ray
diffractometer. ӨS axis is the axis for setting angle of the X-ray source with respect to the sample
while ӨD axis is the axis for setting angle of the detector with respect to the sample surface.

Figure 2.9.2: Goniometer axes at X-ray diffractometer [74]

The diffraction can occur on a radiated monochromatic x-ray beam on the sample if it
satisfied the angle Ө of the Bragg law. The x-ray incident on the sample with selective angle is
known as Bragg angle (ӨB). When the selective angle is achieved, the diffraction in XRD could
be observed. The Bragg’s law equation:

Bragg’s law:

λ = 2d sin ӨB (2.8)
 25

where λ is the wavelength of the incident monochromatic radiation and d is the interplanar spacing.
Figure 2.9.3 shows the schematic of X-ray diffraction. If the incident plane wave hits the material
of crystal thin films at specific angle, the interference of the reflected can be achieved either
destructive or constructive. The constructive interference can be obtained by the path difference
between the two incident and the scattered waves has to be multiple of the wavelength, λ. The
range of x-ray wavelength usually used for X-ray diffraction studies is between 0.05 nm and 0.25
nm [75]. Basically, the value of full width at half maximum (FWHM) described the quality of the
crystal as shown in Figure 2.9.4. The small value of FWHM could be said that thin film has great
quality of crystal compared to the large value of FWHM. The width of the diffraction peak, B
could estimate the particle crystallite size in the thin films. The equation of Debye-Scherrer is
defined:

𝑲𝝀 (2.9)
𝑩 𝟐Ө =
𝑳 𝒄𝒐𝒔 Ө

where K is the Scherrer constant and L is the particle crystallite size. The peak width due to particle
crystallite size is inversely propotional to particle crystallite size. As the smaller size of crystallite
size, the width become boarder. The peak width varies with 2Ө as cos Ө. The constant K (Scherrer
constant) depends on the determination of width, the shape of the crystal and the size distribution.
Usually, the value of K is 0.94 (FWHM of spherical crystals with cubic symmetry) or 0.89 (integral
breadth of spherical crystals with cubic symmetry) [76]. The diffraction peaks of α-SiC and β-SiC
with crystal orientation information shown in Table 2.4 and Table 2.5.

𝟎. 𝟗𝟒𝝀 (2.9.1)
𝑩 𝟐Ө =
𝑳 𝒄𝒐𝒔 Ө
 26

Figure 2.9.3: Schematic of X-ray diffraction [98]

Figure 2.9.4: FWHM of the peak [99]

 27

Table 2.4: The diffraction peak and crystal orientation of α-SiC from RRUFF Project (R061083)
[100]

α-SiC
2-Theta (o) Intensity D-Spacing (Å) h k l
34.14 56.04 2.626 1 0 1
35.64 67.43 2.519 0 0 6
35.71 100.00 2.515 1 0 2
38.19 59.56 2.357 1 0 3
41.44 23.80 2.179 1 0 4
45.35 9.18 1.999 1 0 5
54.70 11.87 1.678 1 0 7
60.01 29.38 1.542 1 0 8
60.10 58.29 1.540 1 1 0
65.70 25.95 1.421 1 0 9
70.97 5.06 1.328 2 0 1
71.78 10.63 1.315 1 0 10
71.87 43.11 1.314 1 1 6
71.91 10.72 1.313 2 0 2
73.47 8.59 1.289 2 0 3
75.47 3.06 1.260 0 0 12
75.64 4.55 1.257 2 0 4
78.27 1.84 1.222 1 0 11
78.39 1.81 1.220 2 0 5
85.62 2.95 1.134 2 0 7

Table 2.5: The diffraction peak and crystal orientation of β-SiC from 00-029-1129 (Moissanite-3C)
[101]

β-SiC
2-Theta (o)Intensity D-Spacing (Å) h k l
35.60 100.00 2.520 1 1 1
41.38 20.00 2.180 2 0 0
59.98 35.00 1.541 2 2 0
71.78 25.00 1.314 3 1 1
75.49 5.00 1.258 2 2 2
90.01 5.00 1.089 4 0 0
100.77 10.00 1.000 3 3 1
104.41 5.00 0.975 4 2 0
2.8 Raman119.99
Spectroscopy theory
5.00 0.890 4 2 2
133.40 5.00 0.839 5 1 1
 28

2.7.2 Raman Spectroscopy

One of the greatest technique to determine the polytypes of SiC material was Raman
scattering. Raman scattering is the method used to observe vibrational, rotational and other low-
frequency modes in a system. This technique also provide information such as crytallinity
percentage, material phase, dopant concentration effect and quantum confinement effect in the
material. As the result of Raman spectroscopy, the peak position is called Raman shift. The Raman
shift is corresponding to the energy change of the phonon. The Equation (2.9.3) shows the equation
of crystallinity percentage where Ic represents crystalline intensity while IA represents amorphous
intensity [77].

1 1
𝑅𝑎𝑚𝑎𝑛 𝑆ℎ𝑖𝑓𝑡 𝑐𝑚−1 = − X 107 (2.9.2)
𝜆𝑒𝑥 𝜆𝑒𝑚

𝐼𝐶 (2.9.3)
% 𝐶𝑟𝑦𝑠𝑡𝑎𝑙𝑙𝑖𝑛𝑒 = 𝑥 100
𝐼𝐶 + 𝐼𝐴

The Equation (2.9.2) above shows the Raman shift equation where λex is the excitation wavelength
(nm) and λem is the emmision wavelength (nm). In this technique, it can be observe the band
position, band intensity, band shift and band width. In this study, the band intensity and band width
is most useful as it can observe the amorphous or crystalline phases and the concentration (% level)
of the sample. The Raman spectroscopy uses optical as sources with variety of wavelength. The
penetration depth onto the sample is related to the material property and the excitation wavelength.
The thickness of the sample also be considered before use this technique to choose the suitable
wavelength of laser. Equation (2.9.4) shows the skin depth equation.

2𝜌
Skin Depth, δs = √ (2.9.4)
2𝜋𝑓µ𝑜 µ𝑅

where ρ is the bulk resistivity (Ohms), 𝑓 the frequency (Hz), µo the permeability constant of
vacuum and µR relative permeability of sample.
 29

The typical Raman spectra of common polytypes SiC (room temperature) has two sharp
peaks. The first sharp peak is in the range 790cm-1 to 800cm-1 and the second sharp peak is in
range 970cm-1 to 980cm-1 [78]. Figure 2.9.5 shows that the previous study of highly crystalline
SiC thin films grown by HWCVD technique. The SiC thin films grown on Cr substrate. The results
show that the first order and second order peaks of SiC thin films [80].

Figure 2.9.5: Raman Spectroscopy of previous study [80]

2.7.3 Atomic Force Microscopy

AFM is one kind of scanning probe microscope (SPM). It is a powerful method to study
the surface topology of the sample. There are consists of three modes which is contact mode,
 30

tapping mode and non-contact mode. The contact mode is suitable for hard surface while the non-
contact mode most useful for imaging soft surface but sensitive to the external vibrations. The
tapping mode is probably for imaging soft biological specimen or poor surface adhesion (carbon
nanotubes) [79].

The AFM produces a 3D images on a nanoscale by scanning and measure the forces of
interaction between a sharp probe and surface with short distance. In this study, the probe is hang
by the flexible cantilever and the non-contact mode tip is used to the surface. The sample is
mounted on a piezoelectric scanner with three-dimension piezo-movements. The deflection of the
cantilever is measured by optical method (laser and photodiode). In non-contact mode, the
cantilever do not contact but oscillates near the surface of the sample. The oscillation slightly
above resonant frequency. Figure 2.9.6 shows the schematic diagram of AFM.

Photodiode
Laser

Cantilever
Sample
Tip
Scanner and stage
Piezo movement Probe

Y
Figure 2.9.6: Schematic of AFM
 31

2.7.4 Scanning Transmission Electron Microscopy

A scanning transmission electron microscope (STEM) is a type of transmission electron

microscope (TEM). It also a combination principles of TEM and SEM. STEM requires very thin
samples and looks primarily at beam electrons transmitted by the sample. One of its advantages
over TEM is in enabling the use of other signals that cannot be spatially correlated in TEM,
including secondary electrons, scattered beam electrons, characteristic X-ray and electron energy
loss [80]. In the STEM, there are microscope lenses that can be adjusted to create a focused
convergent electron beam or probe at the sample surface. This focused probe then scanned across
the sample and the various signals are appeared point by point to form an image. The convergence
of the beam destroys its coherency. Figure 2.9.7 shows the schematic diagram of STEM.

Figure 2.9.7: Scanning Transmission Electron Microscopy [80]

 32

CHAPTER 3

METHODOLOGY

3.1 Introduction

This chapter discussed about the experimental setup and growth of SiC thin film. The SiC
thin film will be prepared by using VHF-PECVD technique. VHF-PECVD gives some advantages
to the growth of thin film. The parameter will be manipulated and the nanostructured thin film will
be analyzed by X-Ray diffractometer, Raman spectroscopy, atomic force microscopy and field
emission scanning electron microscopy.

3.2 Research Flow Chart

The research is organized by the following flow chart as shown in Figure 3.1.
 33

Start

Substrate cutting

Substrate cleaning

RF Impedance modification,
VHF-PECVD
parameter optimization

Silicon Carbide thin film

deposition

Morphology
FESEM
AFM
Characterization Structural
of SiC thin film XRD
No RAMAN
Topology
Yes
STEM
Data analysis

Report writting

End

Figure 3.1: Flow Chart

 34

3.3 Preparation of Substrate

Substrate also called as wafer or slice. A substrate is a thin piece of semiconductor material,
normally silicon crystal. The substrate is important in electronics for fabrication that usually in
integrated circuit (ICs) and microdevices. It also undergoes various fabrication process such as
doping, etching and deposition. The substrate must be compatible chemically with the material
used for the deposition of thin film with high temperature. In this study, silicon wafer (100) is used
as the substrate. The piece of silicon substrate were cut into 1 X 1 cm by using diamond cutter.
The cutting process is done carefully to avoid from break and scratch. Mask also must be wear to
prevent from direct oxidation occur.

3.4 Substrate Cleaning

One of the important process in this study is cleaning step. The clarity and shining of
substrate can give great quality of SiC thin films. The materials and their description that used in
the cleaning process is shown in Table 3.1. Table 3.2 shows the sequence of substrate cleaning.
 35

Table 3.1: Materials used for substrate cleaning

Material Description
i. Acetone considered as a solvent
since it can used for general cleaning
or heavy degreasing jobs.
ii. This solvents are commonly used to
successfully remove oils and organic
residues from the surface of silicon
Acetone
wafers.
iii. While solvents do remove these
contaminants, solvents themselves
actually leave residue on the surface
of wafers as well.

i. Isopropyl alcohol is used for regular

cleaning of computer screens, touch
screen displays, and other
electronics surfaces which are made
of plastic or.
ii. Isopropyl is a solvent and as
Isopropyl dissolver of dirt and oil comes from
the substrate.
iii. This alcohol also used as a
disinfectant to remove
microorganisms from the substrate
or wafer.

i. The hydrofluoric acid, HF is used to

Hydrofluouric acid (HF) remove the thin oxide layer and
some fraction of ionic contaminants
 36

Table 3.2: Sequence of substrate cleaning

No Activity Remarks
First Step
a The acetone is filled into the beaker (10ml).

b The face up of the substrate is polished and then  The works is done inside
immersed into the acetone solution. the fume chamber.
 Wear mask and glove
c The beaker is put into the ultrasonic machine.

d The sonic button is pressed.

e The beaker inside the ultrasonic machine is left for

about 30-45 minutes.

f The substrate is rinsed by using Deionized Water (DI

water).

g The substrate is blow dried using Nitrogen gas (N2).

Second step
a The isopropyl is filled into the beaker (10ml).

b The face up of the substrate is polished and then  The works is done inside
immersed into the isopropyl solution. the fume chamber.
 Wear mask and glove
c The beaker is put into the ultrasonic machine.

d The sonic button is pressed.

e The beaker inside the ultrasonic machine is left for

about 15 minutes.

f The substrate is rinsed by using Deionized Water (DI

water).

g The substrate is blow dried using Nitrogen gas (N2).

Third step
a The 2% hydrofluoric acid is filled into the beaker  Use the specific beaker
(10ml). (polypropylene beaker)
 37

 Uses ratio of 1:5

b The face up of the substrate is polished and then  The works is done inside
immersed into the hydrofluoric acid solution. the fume chamber.
 Wear mask and glove
provided
e The substrate is rinsed by using Deionized Water (DI  Perform a wettability test
water). by pouring DI water on the
wafer surface. If the water
turns into little beads and
rolls off, you will know
that the surface is
hydrophobic and free of
oxides.

f The substrate is blow dried using Nitrogen gas (N2).

 38

3.5 SiC Thin Films Deposition

The SiC thin film is deposited with various deposition condition by using VHF-PECVD
machine by mixture of precursor gases to deposit quality nanostructure SiC thin film. The VHF-
PECVD machine system is available at Nanostructure and Nanophysics Laboratory, Ibnu Sina
Institute, UTM as shown in Figure 3.2. Silane (SiH4) and methane (CH4) act as precursor gas and
argon (Ar) and hydrogen (H2) act as carrier gas. The variation of process parameter such as
frequency and substrate temperature will manipulated to study the optimum parameter of the
transition amourphous to crystalline SiC thin film. The RF power will be used is 20W and the
deposition time will be fixed at 15 minutes. The summarization of fixed parameter that used in this
experiment is shown in Table 3.3.

Before starting the experiment using PECVF, it is important to make sure the plasma
reactor is clean and in good condition from dust or contaminants in the chamber. It is to prevent
the deposition thin is free from contamination and no vacuum leak during the process. The vacuum
leaking can be prevented by renewing the vacuum grease at the o-ring. The wall of the PECVD’s
chamber, electrode (anode) and heater block (cathode) need to the clean by using acetone and
isopropanol (IPA). Figure 3.3 shows the schematic of VHF-PECVD.

Figure 3.2: PECVD

 39

Table 3.3: Fixed parameter

SiH4 CH4 RF Power Deposition H2

(sscm) (sscm) (W) Time (s) (sscm)
2 10 20 900 10

After the plasma reactor in clean condition, the thin film deposition process can be
continue.

150 MHz RF Impedance

Generator Matching Network

Electrode

Sample
Plasma

Power Supply and

Temperature Controller

Mass Flow
Nitrogen (N2)
Controller
Turbo HOx
Mass Flow Pump System
Argon (Ar) Controller

Mass Flow
Methane (CH4)
Controller

Mass Flow
Silane (SiH4)
Controller

Hydrogen (H2) Mass Flow

Controller

Figure 3.3: Schematic of VHF-PECVD

 40

3.6 Charaterization of SiC Thin Films

Characterization will be done to study and measure the physical properties of SiC thin film.
Various techniques will be used for the surface morphology such as FESEM and AFM. The
structural properties will be study by using two methods such as XRD diffraction and Raman
spectroscopy. Structural information that will obtained including the crytallinity and the chemical
bonding of the SiC thin films.

3.6.1 X-Ray Diffraction (XRD) Technique

XRD is a great technique to study and measure all the related to the crystal structure of
solid including lattice constant and orientation of the single crystal or polycrystals. The XRD
machine is available at T03, University Industry Research Laboratory (UIRL), UTM. The step
width used is 0.04 degree while the incident slit used is 0.1mm. The scan speed of the XRD
machine is 5.0387 degree per minute. The speed of scan influenced the results of the spectra.

3.6.2 Raman Spectroscopic Technique

The Raman spectroscopy is available at T03, University Industry Research Laboratory

(UIRL), UTM. The laser of 532nm wavelength is used to penetrate the sample. The objective lens
and grating used is X100 and 1800gr/mm respectively. The higher grating used because it produce
 41

high resolution. This machine has spectral range in 50cm-1 to 4000cm-1 depending upon grating.
Hence, it is suitable for study the Raman spectra of the SiC polytypes.

3.6.3 Atomic Force Microscopy (AFM) Technique

SII Scanning Probe Microscopy (SPM) SPA300-HV was used to investigate the surface
topology for the deposited thin films. This SPM has scanning speed in range 0.05Hz to 130Hz.
The scanning speed in this research will used about 60Hz. The scanning area at X-Y (20µm) has
resolution 0.2nm while at Z (2.0µm) has resolution 0.01nm. The equipment is available at Faculty
Science, Universiti Teknologi Malaysia. Contact mode is suitable used for very smooth surface
while non-contact mode for high surface roughness thin film.

3.6.4 Scanning Transmission Electron Microscopy (STEM) Technique

In this study, JEOL aberration corrected STEM with cold field emission gun (Cold-FEG)
known as ARM200F was used to perform imaging and elemental mapping characterization near
substrate and film interface. This atomic resolution analytical microscope achieves a scanning
transmission image (STEM-HAADF) resolution of 80 picometers, the highest in the world for any
commercial Cs corrected TEM. In addition, the presence of an optional spherical aberration
corrector, the resolution of the TEM image can be improved to 0.11 nm.
 42

CHAPTER 4

PRELIMINARY RESULTS

4.1 Introduction

This chapter discusses the preliminary results of SiC thin films grown by VHF-PECVD
technique. The effect of frequency and temperature on the structural properties are observed by
XRD and Raman spectroscopy.

4.2 Raman Spectroscopy Results

SiC thin film with varying frequency and temperature were grown on Si (100) substrate.
Figure 4.1 and Figure 4.2 show the Raman spectra of the SiC thin films deposited by 35MHz and
200MHz. The broad peak observed at 480cm-1 as shown in Figure 4.1. It is assigned to the
amorphous Si. As the frequency increases (200 MHz), the intensity of the amorphous Si decreases
compared to the lower frequency. The sharp peak at about 520 cm-1 is attributed to crystal Si. The
 43

peak at 520 cm-1 by 200 MHz shows much higher intensity compared to 35 MHz while 480 cm-1
peak by 35 MHz has higher intensity compared to 200 MHz. It shows that the crystallinity of the
excess Si embedded on the SiC thin films increases as the deposition frequency increases.

The Raman spectra in Figure 4.2 clearly show the SiC LO and SiC TO phonon peaks at
800cm-1 and 970cm-1 respectively. Ideally, the range of SiC TO will be at 790cm-1 to 800cm-1
while SiC LO at 970cm-1 to 980cm-1 [82]. The small crystallite size and strain associated with
them probably make a bit shift of wavenumber. At 35MHz, there are a broad weak peak at about
760cm-1 which belong to amorphous SiC [82]. The peak between 900cm-1 to 1000cm-1 indicates
to Si rich of SiC or Si second order peak [83], [84]. The intensity of this peak increases as the
frequency increases which explained as an increasing in the fraction volume and the size of the
crystalline SiC. The calculation was made to quantify the crystallinity in the sample. The equation
(2.9.3), Chapter 2 was used.

520 cm-1

480 cm-1

Figure 4.1: Raman spectra between 340 to 700 cm− 1 range

 44

SiC LO

SiC TO

Figure 4.2: Raman spectra between 600 to1100 cm− 1 range

Table 4.1: Percentage of Crystallinity

Sample % Crystalline
35 MHz 85.18
200 MHz 90.85
 45

4.3 XRD Results

The SiC thin films were grown with varying frequency 200oC of temperature. The
crystallinity of SiC thin film is observed by XRD. Figure 4.3 and Figure 4.4 show XRD patterns
of SiC thin films at different frequency. At 35 MHz, there was a peak around 41.79o which is
attributed to the (1 0 4) lattice planes of α-SiC. The list of the SiC lattice orientation was shown in
Table 2.4 and Table 2.5, Chapter 2 However, there are several peaks that contributed to Si and
SiO. There will be further investigation about the existing of this peaks. In Figure 4.4, there are
several peaks were observed which represent the existing of polycrystals in the thin films. Typical
peaks expected are 34.11o (1 0 1) and 65.26o (1 0 9) indicate as α-SiC while 59.39o (2 0 2) indicates
as β-SiC. The larger noise is appeared maybe because of the less thickness of grown SiC thin films
on the Si substrate.

The deposition at 35 MHz and 200 MHz show the transition of crystallization structure. At
200 MHz shows polycrystals in the thin films appeared. Table 4.2 and Table 4.3 show the domain
particles size of α-SiC and β-SiC that exist at frequency 35 MHz and 200 MHz. The particle
crystallite size calculated by the formula of Scherrer equation shown at Chapter 2.
 46

SiO

α-SiC
SiO
Si

Si

SiO

Figure 4.3: XRD Spectra at 35 MHz

SiO
SiO

SiO β-SiC

SiO
α-SiC

α-SiC
α-SiC

Si SiO

Figure 4.4: XRD Spectra at 200 MHz

 47

Table 4.2: Particle Size of α-SiC at 35 MHz

α-SiC

2θ Particle Size (nm)

41.79 177.7

Table 4.3: Particle Size of α-SiC and β-SiC at 200 MHz

α-SiC
2θ Particle Size (nm)
34.11 124.04
65.26 205.72
β-SiC
2θ Particle Size (nm)
59.39 30.34
 48

CHAPTER 5

FUTURE WORKS

5.1 Introduction

This chapter will discussed about the future work on this research. The timeline and
milestone research activity is shown in this chapter.

5.2 Future Work

Accordingly the research methodology as shown on flow chart, the working of research
will be continued on:

1. Making more samples of SiC thin films.

2. Continue on the characterization of growth SiC thin films.
 49

3. Further investigation will be made for better understanding the surface morphology and
topology using scanning transmission electron microscopy (STEM).
4. All the applications from the characterization analysis will be discussed further.
5. Research paper will be made for publication purposes.
6. Research paper will be presented on conference.
7. Completion of the milestone in fulfilling all the proposed objective which lead to the
completion of final thesis.

After the discussion with the panels, the parameter for growth of SiC thin films will be
changes. The parameter will be set for the future works are as follow:

1. The frequency will be used in range 100 MHz until 200 MHz with increments of 20 MHz.
2. The deposition temperature (400oC) will be used for growth of all samples.
 50

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