Si4810BDY

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET with Schottky Diode

MOSFET PRODUCT SUMMARY FEATURES

VDS (V) rDS(on) (Ω) ID (A) • TrenchFET® Power MOSFETS
Pb-free
0.0135 at VGS = 10 V 10
• Fast Switching Speed
Available
30 • Low Gate Charge
0.020 at VGS = 4.5 V 8 RoHS*
• 100 % UIS and Rg Tested COMPLIANT
SCHOTTKY PRODUCT SUMMARY
APPLICATIONS
Diode Forward Voltage
VDS (V) IF (A) • DC-DC Logic Level
VSD (V)
• Low Voltage and Battery Powered Applications
30 0.53 at 3.0 A 3.8

D
SO-8

S 1 8 D

S 2 7 D
Ordering Information:
S 3 6 D Si4810BDY-T1 Schottky Diode
Si4810BDY-T1-E3 (Lead (Pb)-free) G
G 4 5 D
N-Channel MOSFET
Top View
S

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 10 sec Steady State Unit
Drain-Source Voltage (MOSFET) 30
VDS
Reverse Voltage (Schottky) 30 V
Gate-Source Voltage (MOSFET) VGS ± 20
TA = 25 °C 10 7.5
Continuous Drain Current (TJ = 150 °C) (MOSFET)a ID
TA = 70 °C 8 6
Pulsed Drain Current (MOSFET) IDM 50
Continuous Source Current (MOSFET Diode Conduction)a IS 2.3 1.25 A
Average Forward Current (Schottky) IF 3.8 2.4
Pulsed Forward Current (Schottky) IFM 40
Avalanche Current IAS 20
L = 0.1 mH
Single-Pulse Avalanche Energy EAS 20 mJ
TA = 25 °C 2.5 1.38
Maximum Power Dissipation (MOSFET)a
TA = 70 °C 1.6 0.88
PD W
TA = 25 °C 2.0 1.31
a
Maximum Power Dissipation (Schottky)
TA = 70 °C 1.3 0.84
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Device Symbol Typical Maximum Unit
MOSFET 36 50
Maximum Junction-to-Ambient (t ≤ 10 sec)a
Schottky 44 60
RthJA
MOSFET 73 90
Maximum Junction-to-Ambient (t = Steady State)a °C/W
Schottky 77 95
MOSFET 17 21
Maximum Junction-to-Foot (t = Steady State)a RthJF
Schottky 24 30
Notes:
a. Surface Mounted on FR4 Board.
For SPICE model information vis the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 72229 www.vishay.com

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Si4810BDY
Vishay Siliconix

MOSFET AND SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1 3 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
VDS = 30 V, VGS = 0 V 0.007 0.100
Zero Gate Voltage Drain Current
IDSS VDS = 30 V, VGS = 0 V, TJ = 100 °C 1.5 10 mA
(MOSFET and Schottky)
VDS = 30 V, VGS = 0 V, TJ = 125 °C 6.5 20
On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 20 A
VGS = 10 V, ID = 10 A 0.0105 0.0135
Drain-Source On-State Resistancea rDS(on) Ω
VGS = 4.5 V, ID = 5 A 0.016 0.020
Forward Transconductancea gfs VDS = 15 V, ID = 10 A 25 S
IS = 3.0 A, VGS = 0 V 0.485 0.53
Schottky Diode Forward Voltagea VSD V
IS = 3.0 A, VGS = 0 V, TJ = 125 °C 0.420 0.47
Dynamicb
Total Gate Charge Qg 14.5 22
Gate-Source Charge Qgs VDS = 15 V, VGS = 5.0 V, ID = 10 A 6.3 nC
Gate-Drain Charge Qgd 4.7
Gate Resistance Rg 0.2 0.55 0.9 Ω
Turn-On Delay Time td(on) 17 30
Rise Time tr VDD = 15 V, RL = 15 Ω 13 20
Turn-Off Delay Time td(off) ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 45 90 ns
Fall Time tf 15 25
Source-Drain Reverse Recovery Time trr IF = 3.0 A, di/dt = 100 A/µs 36 70
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

www.vishay.com Document Number: 72229

2 S-70138-Rev. C, 22-Jan-07
 Si4810BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

50 50

VGS = 10 thru 5 V
40 40
I D - Drain Current (A)

I D - Drain Current (A)

30 30
4V

20 20
TC = 125 °C

10 10
25 °C
3V - 55 °C
0 0
0 1 2 3 4 5 0 1 2 3 4 5

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.040 2500

Ciss (MOSFET)
0.032 2000
r DS(on) - On-Resistance ( )

C - Capacitance (pF)

0.024 1500

VGS = 4.5 V
0.016 1000
Coss (MOSFET and Schottky)
VGS = 10 V

0.008 500
Crss (MOSFET)

0.000 0
0 10 20 30 40 50 0 4 8 12 16 20

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

6 1.6
VDS = 15 V
ID = 10 A VGS = 10 V
ID = 10 A
5
VGS - Gate-to-Source Voltage (V)

1.4
rDS(on) - On-Resistance

4
(Normalized)

1.2

1.0
2

0.8
1

0 0.6
0 3 6 9 12 15 18 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature

Document Number: 72229 www.vishay.com

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Si4810BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50 0.06

0.05

r DS(on) - On-Resistance ( )
10
I S - Source Current (A)

TJ = 150 °C 0.04
TJ = 25 °C ID = 9.0 A

0.03

1
0.02

0.01

0.1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

30 50
10

40
I R - Reverse Curent (mA)

1
30 V
30
Power (W)

0.1
10 V
0.01 20

20 V
0.001 10

0.0001 0
0 25 50 75 100 125 150
0.01 0.1 1 10 100 1000
TJ - Temperature (°C) Time (sec)
Reverse Current (Schottky) Single Pulse Power

100

Limited
by rDS(on)
10
ID - Drain Current (A)

1 ms

1 10 ms
100 ms

1s
TC = 25 °C
0.1 Single Pulse 10 s
dc

0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
Safe Operating Area, Junction-to-Case

www.vishay.com Document Number: 72229

4 S-70138-Rev. C, 22-Jan-07
 Si4810BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2
Notes:

0.1
0.1 PDM

0.05 t1
t2
t1
1. Duty Cycle, D =
0.02 t2
2. Per Unit Base = RthJA = 70 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72229

Document Number: 72229 www.vishay.com

S-70138-Rev. C, 22-Jan-07 5
 Legal Disclaimer Notice
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All product specifications and data are subject to change without notice.

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Revision: 18-Jul-08 1