Вы находитесь на странице: 1из 6

Journal of Alloys and Compounds 629 (2015) 118–123

Contents lists available at ScienceDirect

Journal of Alloys and Compounds


journal homepage: www.elsevier.com/locate/jalcom

Enhanced pressure-free bonding using mixture of Cu and NiO


nanoparticles
Toshikazu Satoh ⇑, Toshitaka Ishizaki
Toyota Central R&D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192, Japan

a r t i c l e i n f o a b s t r a c t

Article history: Pressure-free bonding using mixed Cu–NiO nanoparticles was examined. The effect of mixing NiO nano-
Received 27 October 2014 particles with Cu nanoparticles on bonding strength was identified for a NiO content between 0.005 and
Received in revised form 12 December 2014 2 wt%. The bonding layer, which presented a high bonding strength, was thin and dense. The Ni in the
Accepted 27 December 2014
bonding layer was segregated at the surface and at grain boundaries of crystalline Cu grains as a metallic
Available online 9 January 2015
Cu–Ni alloy. These results suggest that the effect of the NiO addition is caused by the enhancement of
sintering by surface diffusion in the bonding layer, resulting from sufficient removal of surface oxides
Keywords:
on the Cu nanoparticles through their reaction with the NiO nanoparticles.
Metals and alloys
Nanostructured materials
Ó 2015 Elsevier B.V. All rights reserved.
Sintering
Diffusion
Microstructure

1. Introduction have a low thermal conductivity, making it difficult for them to


effectively release heat. This in turn leads to a fatigue-based
Recently, there has been considerable interest in improving degradation induced by the stress accumulated from thermal
hybrid electric vehicle technologies, which require electric propul- cyclic loading. Therefore, it has become imperative to develop a
sion systems with high current, high voltage, and low power loss bonding material that is Pb-free as well as able to endure high
semiconductor devices. At present, these systems rely exclusively temperatures.
on silicon-based power; however, silicon power devices are rapidly Recently, with the advance of nanotechnology, Ag nanoparticles
approaching maturity. One area of development is Si-based power have been studied as novel bonding materials [3–9], due to the fact
device performance, which is limited in high power density and that the high surface energy available on the nanoscale offers an
high temperature environments. Thus, the next-generation power advantageous, significantly lower sintering temperature than Ag’s
electronic systems will require radical power-management solu- melting point (1236 K). As a quantitative example, it has been
tions based on new electronic materials. Recently, wide bandgap reported that Ag nanoparticles with an average 20 nm diameter
semiconductors such as SiC and GaN have emerged as potential can be sintered at 523 K to increase their size to >1 mm [10]. In
alternatives to Si because of their ability to achieve a compara- addition to these advantages, Ag displays the lowest electrical
tively higher power density [1]. resistivity and highest thermal conductivity among metals. Despite
Devices made from these semiconductor compounds are opera- these advantages, Ag is still not considered suitable for practical
ble at temperatures greater than 473 K, and potentially up to applications because of its high cost and low resistivity towards
573 K, which is higher than the present Si-based devices. Never- ion migration [11].
theless, such temperatures are too high for the solders that are cur- On the other hand, Cu is considerably cheaper than Ag while
rently used [2]. Among the different materials currently used for possessing a similar electrical resistivity and thermal conductivity,
soldering, the Pb-rich solder (Pb–5 Sn) can possibly endure these yet with a strong durability towards ion migration. With the added
aforementioned high temperatures. However, the Pb-rich materi- nanoscale functionalities, Cu nanoparticles could be considered an
als have an inherent disadvantage in their toxicity. In fact, emerg- alternative bonding material. In our earlier study, we developed a
ing regulations have demanded the elimination of Pb use in novel strategy to synthesize Cu nanoparticles capped with fatty
electronic assemblies. Furthermore, the Pb-rich soldering materials acids and amines, which obtained a high bonding strength even
at a low (573 K) processing temperature [12]. Although such nano-
⇑ Corresponding author. Tel.: +81 561 71 7592. particles generally require an additional high pressure to establish
E-mail address: toshi@mosk.tytlabs.co.jp (T. Satoh). strong bonding, high pressures are not desirable as part of the

http://dx.doi.org/10.1016/j.jallcom.2014.12.224
0925-8388/Ó 2015 Elsevier B.V. All rights reserved.
T. Satoh, T. Ishizaki / Journal of Alloys and Compounds 629 (2015) 118–123 119

semiconductor device packaging process. Therefore, in recent


years, significant efforts have been made to realize pressure-free
bonding or low-pressure bonding [3,13–16].
Our research revealed that a thin Ni layer applied to the base
materials, such as on Cu and Al plates, enabled pressure-free bond-
ing of Cu nanoparticles [16]. The high bonding strength that
resulted from the insertion of a Ni layer was due to the increased
interfacial bonding strength between the Cu nanoparticle layer
and the base material as the Cu closely adhered to the Ni layer.
However, the insertion of this Ni layer only affected the interfacial
bonding strength, while the strength within the Cu nanoparticle
bonding layer is considered far lower than one with high pressure
applied during the bonding process. As the aforementioned bond-
ing of the Cu layer to the Ni layer likely resulted from the active
surface diffusion of Cu atoms from the Cu nanoparticles, mixing
Ni into the Cu nanoparticle bonding layer is expected to increase
bonding strength by promoting the diffusion of Cu atoms. Our
recent research demonstrated that mixing Ni or Ni-based alloy
nanoparticles into the Cu nanoparticle bonding layer improved
the bonding strength of pressure-free bonding [17,18].
Further, the formation of the Cu layer on the Ni layer is trig-
gered by the development of a NiO and CuO solid solution, with
the origin of both surface oxides accompanied by a Cu valence
Fig. 1. The shear strength of the Cu plates bonded using the mixed Cu–NiO
change, from the monovalent to the bivalent form [19]. The gener-
nanoparticles plotted relative to the NiO content.
ation of this solid solution facilitates the reduction of the surface
oxides, promoting surface diffusion. It is therefore expected that
adding NiO particles to the Cu nanoparticle bonding layer instead increasing NiO content in the mixture, reaching a maximum bond-
of the Ni or Ni-based alloy particles would also improve the pres- ing strength of 30.5 MPa at 1 wt% of NiO. After this point, the bond-
sure-free bonding strength. Therefore, we examined the mixing of ing strength decreased abruptly with increasing NiO concentration,
NiO nanoparticles (up to 10 wt%) with the Cu nanoparticles for lowering the bonding strength below the Cu nanoparticles alone
pressure-free bonding. In this article, we will report on the pres- once the NiO content was higher than 2 wt%. The observed range
sure-free bonding properties of mixed Cu–NiO nanoparticle layers. of NiO content that increased bonding strength was significantly
lower than that of the Ni and Ni-based alloy nanoparticles [17,18].
2. Materials and methods In this article, the bonding layer thickness is defined as an aver-
age thickness of both ends of the bonding layer in a cross-sectional
The Cu nanoparticles used in this work, surface-modified by using decanoic acid optical micrograph. Fig. 2 shows the thickness of the mixed Cu–
(CH3(CH2)8COOH) and decylamine (CH3(CH2)9NH2), were synthesized following our NiO nanoparticle bonding layer plotted against the NiO content
previously reported procedure [20], combined with commercial NiO nanoparticles
obtained from Sigma–Aldrich. The average particle sizes of the Cu and NiO nanopar-
in the mixture. For the low content of NiO up to 2 wt%, the thick-
ticles were 230 and 50 nm, respectively. After mixing the Cu and NiO nanoparticles, ness of the mixed Cu–NiO nanoparticle bonding layer was thinner
a mixed Cu–NiO nanoparticle paste was obtained by mixing a-terpineol (CH3(C6-
H8)C(CH3)2OH) and decanol (CH3(CH2)8CH2OH) with the nanoparticles by using a
planetary centrifugal mixer. 50 ll of each solvent was used per gram of the mixed
Cu–NiO nanoparticles. The NiO nanoparticle content in the Cu–NiO nanoparticle
mixture was varied between 0 and 10 wt%. The influence of the NiO nanoparticle
content on the printing properties of the mixed Cu–NiO nanoparticle paste was
insignificant.
Circular and rectangular Cu plates, with sizes of /5 mm  2 mm and
22  10  3 mm, respectively, were bonded using the mixed Cu–NiO nanoparticle
paste. A 40 nm thick Ni film was deposited by sputtering on each Cu plate as an
adhesive layer. A 150 lm thick Cu–NiO nanoparticle paste was applied to a /
5 mm region of the rectangular Cu plate’s Ni-coated surface by a bar-coating
method involving the use of a metal mask, and then the Ni-coated circular Cu plate
was placed on top of this paste. The stacked sample was then loaded into the fur-
nace and fired under a H2 atmosphere at 623 K for 300 s. No additional pressure
was applied to the bonding plane besides the weight of the circular Cu plate
(0.35 gf).
The sample’s bonding strength was examined by performing a shear test.
Procedure of the shear test was explained in elsewhere [16]. The bonding layer’s
structure was analyzed by scanning electron microscopy (SEM) and scanning trans-
mission electron microscopy-energy dispersive X-ray spectroscopy (STEM–EDS).
Accelerating voltages for SEM and STEM–EDS were 15 kV and 200 kV, respectively.

3. Results

Fig. 1 shows the sample bonding strength plotted relative to the


NiO content in the mixture. The addition of a small quantity of NiO
nanoparticles (0.05 wt%) in the bonding layer improved the
bonding strength compared to Cu nanoparticles without the NiO Fig. 2. Thickness of the mixed Cu–NiO nanoparticle bonding layer plotted against
nanoparticles. The bonding strength increased gradually with an the NiO content.
120 T. Satoh, T. Ishizaki / Journal of Alloys and Compounds 629 (2015) 118–123

than that of the Cu only bonding layer, and it had a gradually and (b). This result indicates that there are few oxide phases in
increasing tendency with increasing NiO quantity. Because the the bonding layer. As shown in Fig. 4(c), Cu was distributed in all
dependence of the thickness on the NiO content is opposite to that regions where there was any sort of substance in the STEM image
of the bonding strength shown in Fig. 1, it is believed that the (Fig. 4(a)). In contrast, the Ni segregated at the grain boundaries
bonding strength and bonding layer thickness have an inverse rela- and on the crystalline Cu surface without maintaining a particulate
tionship with the NiO content. shape, as shown in Fig. 4(d). Fig. 5 shows EDS spectra taken from
Cross-sectional SEM images taken near the interface between the grain boundary (point A) and the intragranular (point B) region
the mixed Cu–NiO nanoparticle bonding layer and the Cu base in Fig. 4(a). O was scarcely detected in each spectrum. On the other
plate are shown in Fig. 3. The Ni layer was so thin that it could hand, the intensity corresponding to Ni Ka at the grain boundary
not be identified in the images. The bonding layer directly con- region (Fig. 5(a)) was much greater than that at the intragranular
nected to the base plate without producing any additional interfa- region where Ni was scarcely detected. Ni/Cu atomic ratios at the
cial phases in any of the interfaces. Additionally, structural defects grain boundary and the intragranular region calculated from the
including cracks and micro-voids were observed inside all bonding EDS spectra were 0.040 and 0.0015, respectively. It is inferred that
layers. Major cracks were observed in the mixed Cu–NiO bonding the metallic state of Ni segregated at the grain boundaries and sur-
layers of 0.01–1 wt% NiO content (Fig. 3(b), (c), and (d)). On the face of the crystalline Cu.
other hand, the micro-voids were larger and more frequently
observed in the Cu only and Cu-10 wt% NiO bonding layers 4. Discussion
(Fig. 3(a) and (e)) over the others. These results indicate that the
bonding layer exhibiting a higher bonding strength and decreased The improved bonding strength and changes in the bonding
thickness has a larger amount of cracks and lower amount of layer through mixing the NiO and Cu nanoparticles were described
micro-voids. in Section 3. The mechanism of this bonding strength improvement
Fig. 4 shows the STEM image and EDS maps of the Cu-2 wt% NiO will be discussed here.
nanoparticle bonding layer. The distribution of O was uniform, The bonding strength increased as the bonding layer thickness
with a limited dependence on morphology, as shown in Fig. 4(a) decreased, as described in Section 3. Therefore, the bonding

Fig. 3. Cross-sectional SEM images near the interface between the mixed Cu–NiO nanoparticle bonding layer and the Cu base plate; the NiO contents are (a) 0, (b) 0.01, (c) 0.1,
(d) 1, and (e) 10 wt%.
T. Satoh, T. Ishizaki / Journal of Alloys and Compounds 629 (2015) 118–123 121

Fig. 4. (a) STEM image and EDS maps of the Cu-2 wt% NiO bonding layer for (b) O, (c) Cu, and (d) Ni.

strength was plotted against the thickness of the bonding layer in boundary phases of metallic Ni itself, even if electron beam spread-
Fig. 6. The previously described relationship between the bonding ing within the sample is considered. On the other hand, the Cu–Ni
strength and bonding layer thickness was confirmed. Since the Cu system is isomorphous [23]. Ni is therefore considered to form a
nanoparticle bonding layer without any NiO particles follows the Cu–Ni solid solution, although the existence of an extremely thin
same correlation that is indicated by a region enclosed with dashed Ni layer at the grain boundary cannot be denied. If this hypothesis
line in Fig. 6, the NiO nanoparticles contribute minimally to the is correct, the Ni atoms originating from the NiO nanoparticles dif-
bonding strength. fused to the Cu nanoparticle surfaces in addition to alloying and
The bonding layer displaying the higher bonding strength and reducing. The NiO forms a solid solution with CuO rather than
decreased thickness has a larger number of cracks and lower Cu2O [24], and along with CuO, it is reduced more easily than
amount of micro-voids, as shown in Fig. 3. The cracks are caused Cu2O [25–27]. Therefore, the alloying and reduction of the NiO
by the bonding layer shrinkage associated with the sintering pro- and Cu2O, described in Eqs. (1) and (2), were proposed in our pre-
cess. In contrast, the decreased quantity of micro-voids originated vious article [19].
from the crystal growth of the Cu nanoparticles. It is therefore
likely that the sintering improved the bonding layer with the NiO þ xCu2 O ! NiðCux ÞO1þx þ xCu ð1Þ
higher bonding strength and lower thickness.
NiðCux ÞO1þx þ ð1 þ xÞH2 ! NiðCux Þ þ ð1 þ xÞH2 O ð2Þ
Next, the effect of the NiO nanoparticles mixed with the Cu
nanoparticles on the layer’s sintering behavior will be examined.
Sintering of the nanoparticle bonding layer generally starts with When the Cu2O phase on the Cu nanoparticles is removed by these
the surface diffusion of metallic atoms originating in the nanopar- reactions, the metallic Cu and Ni–Cu solid solution produced by
ticles. However, the nanoparticles’ surface oxides inhibit an active these reactions are expected to actively diffuse from the Cu nano-
surface diffusion. Therefore, promoting a reduction of the surface particles, promoting the bonding layer sintering. The distribution
oxides stimulates the sintering. In the case of the Cu nanoparticle of Ni in the bonding layer, shown in Fig. 4(d), supports the above
bonding, reducing the Cu monovalent oxide phase (Cu2O) is con- model. Moreover, the effect of mixing the Ni and Ni-based alloy
sidered important because its activation energy for reduction by nanoparticles with the Cu nanoparticles is expected to be caused
H2 is higher than that of CuO [21,22]. On the other hand, the metal- by the reactions in Eqs. (1) and (2) as well. Although the surface
lic state of Ni segregated at the grain boundaries and surface of the oxide of the nanoparticles contributes to this reaction, the volume
crystalline Cu, as described in Section 3. Cu existed at the region ratio of the surface oxide to the nanoparticle would be small
where Ni segregated as shown in Fig. 4(c), and the Ni/Cu atomic [17,18]. In contrast, the entire volume of the NiO nanoparticles
ratio was 0.040 at the grain boundary region. This value does not mixed into the Cu nanoparticles could be involved in the reaction.
seem to be large enough to indicate that that there are any grain As a result, it is believed that the effective NiO nanoparticle content
122 T. Satoh, T. Ishizaki / Journal of Alloys and Compounds 629 (2015) 118–123

Fig. 6. The shear strength of Cu plates bonded using the mixed Cu–NiO nanopar-
ticles plotted relative to bonding layer thickness.

Cu nanoparticle surface oxides begins with the reaction between


NiO and Cu2O. Thus, it is considered that the optimal NiO nanopar-
ticle content is affected by the particle size and dispersion, as these
affect the number of reaction sites. In addition, the volume ratio of
Cu2O in a Cu nanoparticle with its surface modified by organic mol-
ecules is expected to be small [12]. Therefore, a higher bonding
strength resulting from the addition of a small amount of NiO
nanoparticles is anticipated if the NiO nanoparticles are smaller
and uniformly dispersed.

5. Conclusions

Mixtures of Cu and NiO nanoparticles were examined in order


Fig. 5. EDS spectra taken from point (a) A and (b) B in Fig. 4(a).
to improve the pressure-free nanoparticle bonding, with the
obtained results discussed below.
Mixing NiO nanoparticles with Cu nanoparticles improved the
is considerably smaller than that of Ni and Ni-based alloy bonding strength. The NiO content that showed a higher bonding
nanoparticles. strength than Cu nanoparticles alone was between 0.005 and
However, the diffusion coefficients of Cu and Ni in the Ni–Cu 2 wt%. The bonding strength and thickness of the bonding layer
solid solution are reportedly dependent on its composition. In showed an inverse relationship with the NiO content. The bonding
the literature, the diffusion coefficients of Cu and Ni in Ni- strength increased as the thickness of the bonding layer decreased,
78.5 at.% Cu at 623 K were 7.2  1024 m2/s and 2.2  1023 m2/s, and the relationship between these two was approximately
respectively; whereas those in Ni-13 at.% Cu at 623 K were expressed by a power function, independent of the NiO concentra-
1.1  1026 m2/s and 1.8  1029 m2/s, respectively [28]. Since tion. The morphology of the mixed Cu–NiO nanoparticle bonding
the Cu–Ni system is isomorphous as previously described, these layer became denser as the bonding layer decreased in thickness,
diffusion coefficients indicate that the diffusion velocities of both with the bonding strength increased. The Ni in the bonding layer
Cu and Ni in the Cu–Ni solid solution decrease as the Ni content became segregated at the surfaces and grain boundaries of crystal-
increases. Therefore, it is considered that an excess of NiO nanopar- line Cu grains in the form of a metallic Cu–Ni alloy.
ticles mixed with the Cu nanoparticles inhibits sintering of the These results reveal the effect of improved bonding strength by
bonding layer, even if the Cu2O phase at the Cu nanoparticle sur- adding NiO nanoparticles to the Cu nanoparticle bonding layer. It is
face is sufficiently removed. suggested that this reinforcing mechanism of the bonding layer
The effect of mixing NiO nanoparticles with Cu nanoparticles on begins with the formation of a NiO–CuO solid solution, originating
the bonding strength is likely controlled by the balance between between the NiO nanoparticles and surface oxides of the Cu nano-
the Cu nanoparticle’s surface oxide removal with the composition particles, followed by a subsequent removal of surface oxides and
of the Ni–Cu solid solution produced during the surface oxide then active surface diffusion.
reduction process discussed above. In other words, increasing the
NiO content would increase the removal of surface oxides, promot- Acknowledgement
ing sintering in the bonding layer; whereas it would also increase
the Ni concentration in the Ni–Cu solid solution, which inhibits The authors would like to thank Hisano Sugano and Asami
sintering. According to the aforementioned model, the removal of Nishikawa for their assistance during the experimental work.
T. Satoh, T. Ishizaki / Journal of Alloys and Compounds 629 (2015) 118–123 123

References [15] Y. Morisada, T. Nagaoka, M. Fukusumi, Y. Kashiwagi, M. Yamamoto, M.


Nakamoto, H. Kakiuchi, Y. Yoshida, A low-temperature pressureless bonding
process using a trimodal mixture system of Ag nanoparticles, J. Electron.
[1] P.G. Neudeck, R.S. Okojie, L.Y. Chen, High-temperature electronics – a role for
Mater. 40 (2011) 2398–2402.
wide bandgap semiconductors?, Proc IEEE 90 (2002) 1065–1076.
[16] T. Ishizaki, K. Akedo, T. Satoh, R. Watanabe, Pressure-free bonding of metallic
[2] H.S. Chin, K.Y. Cheong, A.B. Ismail, A review on die attach materials for SiC-
plates with Ni affinity layers using Cu nanoparticles, J. Electron. Mater. 43
based high-temperature power devices, Metall. Mater. Trans. B 41 (2010) 824–
(2014) 774–779.
832.
[17] R. Watanabe, T. Ishizaki, Enhancement of pressure-free bonding with Cu
[3] K. Suganuma, S. Sakamoto, N. Kagami, D. Wakuda, K.S. Kim, M. Nogi, Low-
particles by the addition of Cu–Ni alloy nanoparticles, J. Mater. Chem. C 2
temperature low-pressure die attach with hybrid silver particle paste,
(2014) 3542–3548.
Microelectron. Reliab. 52 (2012) 375–380.
[18] R. Watanabe, T. Ishizaki, High-strength pressure-free bonding Using Cu and
[4] P.O. Quintero, F.P. McCluskey, Temperature cycling reliability of high-
Ni–Sn nanoparticles, Part. Part. Syst. Charact. 31 (2014) 699–705.
temperature lead-free die-attach technologies, IEEE Trans. Device Mater.
[19] T. Satoh, K. Akedo, T. Ishizaki, X-ray photoelectron spectroscopic study of the
Reliab. 11 (2011) 531–539.
formation of Cu/Ni interface mediated by oxide phase, J. Alloys Comp. 582
[5] T.G. Lei, J.N. Calata, G.-Q. Lu, X. Chen, S. Luo, Low-temperature sintering of
(2014) 403–407.
nanoscale silver paste for attaching large-area chips, Compon. Packag. Technol.
[20] T. Ishizaki, T. Satoh, A. Kuno, A. Tane, M. Yanase, F. Osawa, Y. Yamada, Thermal
IEEE Trans. 33 (2010) 98–104.
characterizations of Cu nanoparticle joints for power semiconductor devices,
[6] K.S. Siow, Mechanical properties of nano-silver joints as die attach materials, J.
Microelectron. Reliab. 53 (2013) 1543–1547.
Alloys Comp. 514 (2012) 6–19.
[21] J.Y. Kim, J.A. Rodriguez, J.C. Hanson, A.I. Frenkel, P.L. Lee, Reduction of CuO and
[7] T. Morita, E. Ide, Y. Yasuda, A. Hirose, K.F. Kobayashi, Study of bonding
Cu2O with H2: H embedding and kinetic effects in the formation of suboxides,
technology using silver nanoparticles, Jpn. J. Appl. Phys. 47 (2008) 6615.
J. Am. Chem. Soc. 125 (2003) 10684–10692.
[8] E. Ide, S. Angata, A. Hirose, K.F. Kobayashi, Metal–metal bonding process using
[22] U. Tilliander, R.E. Aune, S. Seetharaman, Kinetics studies of hydrogen reduction
Ag metallo-organic nanoparticles, Acta Mater. 53 (2005) 2385–2393.
of Cu2O, Z. Metallkd. 97 (2006) 72–78.
[9] H. Ogura, M. Maruyama, R. Matsubayashi, T. Ogawa, S. Nakamura, T. Komatsu,
[23] Scientific Group Thermodata Europe (SGTE), and P. Franke, D. Neuschütz, Cu–
H. Nagasawa, A. Ichimura, S. Isoda, Carboxylate-passivated silver nanoparticles
Ni, in: P. Franke, D. Neuschütz (eds.), SpringerMaterials - The Landolt-Börnstein
and their application to sintered interconnection: a replacement for high
Database (http://www.springermaterials.com), Springer Berlin Heidelberg,
temperature lead-rich solders, J. Electron. Mater. 39 (2010) 1233–1240.
2005, pp. 1–4, doi: http://dx.doi.org/10.1007/10757413_11.
[10] Y. Li, K.S. Moon, C.P. Wong, Enhancement of electrical properties of
[24] J. Bularzik, P.K. Davies, A. Navrotsky, Thermodynamics of solid-solution
anisotropically conductive adhesive joints via low temperature sintering, J.
formation in NiO–CuO, J. Am. Ceram. Soc. 69 (1986) 453–457.
Appl. Polym. Sci. 99 (2006) 1665–1673.
[25] J.T. Richardson, R. Scates, M.V. Twigg, X-ray diffraction study of nickel oxide
[11] Y. Morisada, T. Nagaoka, M. Fukusumi, Y. Kashiwagi, M. Yamamoto, M.
reduction by hydrogen, Appl. Catal. A 246 (2003) 137–150.
Nakamoto, A low-temperature bonding process using mixed Cu–Ag -
[26] B. Janković, B. Adnadević, S. Mentus, The kinetic study of temperature-
nanoparticles, J. Electron. Mater. 39 (2010) 1283–1288.
programmed reduction of nickel oxide in hydrogen atmosphere, Chem. Eng.
[12] T. Ishizaki, R. Watanabe, A new one-pot method for the synthesis of Cu
Sci. 63 (2008) 567–575.
nanoparticles for low temperature bonding, J. Mater Chem. 22 (2012) 25198–
[27] J.A. Rodriguez, J.C. Hanson, A.I. Frenkel, J.Y. Kim, M. Pérez, Experimental and
25206.
theoretical studies on the reaction of H2 with NiO: role of O vacancies and
[13] C. Oh, S. Nagao, K. Suganuma, Pressureless bonding using sputtered Ag thin
mechanism for oxide reduction, J. Am. Chem. Soc. 124 (2002) 346–354.
films, J. Electron. Mater. 43 (2014) 4406–4412.
[28] H. Bakker, Ag–Al – Cu–Sn, in: H. Mehrer, (Ed.), SpringerMaterials – The Landolt-
[14] P. Peng, A. Hu, B. Zhao, A.P. Gerlich, Y.N. Zhou, Reinforcement of Ag
Börnstein Database (http://www.springermaterials.com), Springer Berlin
nanoparticle paste with nanowires for low temperature pressureless
Heidelberg, 1990, pp. 218–230, doi: http://dx.doi.org/10.1007/10390457_50.
bonding, J. Mater. Sci. 47 (2012) 6801–6811.

Вам также может понравиться