IGBT MODULE Spec.No.

IGBT-SP-10024 R3 P1

MBN3600E17F
Silicon N-channel IGBT 1700V F version

FEATURES
 Soft switching behavior & low conduction loss:
Soft low-injection punch-through with
Advanced trench HiGT* (*High conductivity IGBT).
 Low driving power:
Low input capacitance advanced trench gate.
 Low noise recovery: Ultra soft fast recovery diode.
o
ABSOLUTE MAXIMUM RATINGS (Tc=25 C )

Item Symbol Unit MBN3600E17F

Collector Emitter Voltage VCES V 1,700
Gate Emitter Voltage VGES V 20
DC IC 3,600
Collector Current A
1ms ICp 7,200
DC IF 3,600
Forward Current A
1ms IFM 7,200
o
Junction Temperature Tj op C -50 ~ +150
o
Maximum Junction Temperature Tvj max C 175 (1)
o
Storage Temperature Tstg C -55 ~ +125
Isolation Voltage VISO VRMS 4,000(AC 1 minute)
Terminals (M4/M8) - 2/15 (2)
Screw Torque N·m
Mounting (M6) - 6 (3)
Notes: (1) Only applicable for non-switching operation. Regarding the definition for each operation mode, please refer to LD-ES-130737.
(2) Recommended Value 1.80.2/15+0-3N·m (3) Recommended Value 5.50.5N·m
ELECTRICAL CHARACTERISTICS

Item Symbol Unit Min. Typ. Max. Test Conditions

o
- - 10 VCE=1,700V, VGE=0V, Tj=25 C
Collector Emitter Cut-Off Current I CES mA o
- 35 150 VCE=1,700V, VGE=0V, Tj=150 C
o
Gate Emitter Leakage Current IGES nA -500 - +500 VGE=20V, VCE=0V, Tj=25 C
o
- 2.0 - IC=3,600A, VGE=15V, Tj=25 C
o
Collector Emitter Saturation Voltage VCE(sat) V - 2.3 - IC=3,600A, VGE=15V, Tj=125 C
o
- 2.4 2.8 IC=3,600A, VGE=15V, Tj=150 C
o
Gate Emitter Threshold Voltage VGE(TO) V 4.1 5.5 7.1 VCE=10V, IC=360mA, Tj=25 C
o
Input Capacitance Cies nF - 177 - VCE=10V, VGE=0V, f=100kHz, Tj=25 C
o
Internal Gate Resistance Rge  - 1.3 - VCE=10V, VGE=0V, f=100kHz, Tj=25 C
Rise Time tr - 0.35 0.8 VCC=900V, Ic=3,600A
Turn On Time ton - 1.4 2.8 Ls=55nH (3)
Switching Times s RG(on/off)=3.3/3.3 (4)
Fall Time tf - 1.6 3.2 o
Turn Off Time toff - 3.3 6.6 VGE=15V, Tj=150 C
o
- 2.1 - IF=3,600A, VGE=0V, Tj=25 C
o
Peak Forward Voltage Drop VFM V - 2.3 - IF=3,600A, VGE=0V, Tj=125 C
o
- 2.25 2.7 IF=3,600A, VGE=0V, Tj=150 C
s
o
Reverse Recovery Time trr - 0.8 1.6 150 C
o
- 0.95 - 125 C
Turn On Loss Eon J/P
150 C VCC=900V, Ic=3,600A
o
- 1.0 -
o Ls=55nH (4)
- 2.75 - 125 C R (on/off)= 3.3/3.3 (4)
Turn Off Loss Eoff J/P o G
- 3.0 - 150 C VGE=15V
o
- 1.0 - 125 C
Reverse Recovery Loss Err J/P o
- 1.15 - 150 C
Stray inductance in module LSCE nH - 8 -
IGBT Rth(j-c) - - 0.0072
Thermal Impedance K/W Junction to case
FWD Rth(j-c) - - 0.011
Case to fin (grease=1W/(m･K),
Contact Thermal Impedance Rth(c-f) K/W - 0.005 -
heat-sink flatness 50um)
Notes:(4) Ls and RG are the test condition’s values for evaluation of the switching times, not recommended value.
Please, determine the suitable RG value after the measurement of switching waveforms
(overshoot voltage, etc.) with appliance mounted.
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
* ELECTRICAL CHARACTERISTICS values are according to IEC 60747-2 and IEC 60747-9.
IGBT MODULE Spec.No.IGBT-SP-10024 R3 P2

MBN3600E17F
STATIC CHARACTERISTICS
TYPICAL TYPICAL
VGE=15V 13V 11V VGE=15V 13V
4800 4800
Tj=25℃ 11V
Tj=125℃

3600 3600
Collector Current IC (A)

Collector Current IC (A)

9V
2400 2400 9V

1200 1200

7V
7V

0 0
0 1 2 3 4 0 1 2 3 4

Collector-Emitter Voltage VCE (V) Collector-Emitter Voltage VCE (V)

Collector Current vs. Collector to Emitter Voltage Collector Current vs. Collector to Emitter Voltage
TYPICAL
VGE=15V 13V TYPICAL
4800
4800
Tj=150℃ Tj=25℃
11V

3600 3600
Collector Current IC (A)

Forward Current IF (A)

2400 9V 2400

1200 1200 Tj=150℃

7V

Tj=125℃

0 0
0 1 2 3 4 0.0 1.0 2.0 3.0

Collector-Emitter Voltage VCE (V) Forward Voltage VF (V)

Collector Current vs. Collector to Emitter Voltage Forward Voltage of free-wheeling diode
IGBT MODULE Spec.No.IGBT-SP-10024 R3 P3

MBN3600E17F
DYNAMIC CHARACTERISTICS
TYPICAL TYPICAL
1.2 3.0
【 Conditions】 【 Conditions】
Vcc=900V Vcc=900V
L=55nH L=55nH
RG(on/off)=3.3/3.3Ω RG(on/off)=3.3/3.3Ω
1.0 VG=±15V 2.5 VG=±15V
Inductive Load Inductive Load

Tj=150oC

Turn-off Loss Eoff (J/pulse)

Turn-on Loss Eon (J/pulse)

0.8 Tj=150oC 2.0

Tj=125oC

Tj=125oC
0.6 1.5

0.4 1.0

0.2 0.5

0.0 0.0
0 1000 2000 3000 4000 0 1000 2000 3000 4000
Collector Current Ic (A) Collector Current Ic (A)
Turn-on Loss vs. Collector Current Turn-off Loss vs. Collector Current

TYPICAL
1.4
【 Conditions】
Vcc=900V
L=55nH
RG(on/off)=3.3/3.3Ω
1.2 VG=±15V
Inductive Load

Tj=150oC
Reverse Recovery Loss Err (J/pulse)

1.0

0.8 Tj=125oC

0.6

0.4

0.2

0.0
0 1000 2000 3000 4000
Forward Current IF (A)
Reverse Recovery Loss vs. Forward Current
IGBT MODULE Spec.No.IGBT-SP-10024 R3 P4

MBN3600E17F
TYPICAL TYPICAL
2.5 4.0
【 Conditions】 【 Conditions】
Vcc=900V Vcc=900V
L=55nH L=55nH
Ic=3600A Ic=3600A
VG=±15V
3.5
VG=±15V Tj=150oC
Inductive Load Inductive Load
2.0
Tj=150oC
3.0
Tj=125oC

Eoff (J/pulse)
Eon (J/pulse)

Tj=125oC
2.5
1.5

2.0
Turn-on Loss

Turn-off Loss
1.0
1.5

1.0
0.5

0.5

0.0 0.0
0 2 4 6 8 0 2 4 6 8
Gate Resistance Rg (Ω) Gate Resistance Rg (Ω)
Turn-on Loss vs. Gate Resistance Turn-off Loss vs. Gate Resistance
TYPICAL
1.4
【 Conditions】
Vcc=900V
L=55nH
IF=3600A
1.2 VG=±15V
Inductive Load
Tj=150oC
Err (J/pulse)

1.0

0.8 Tj=125oC
Reverse Recovery Loss

0.6

0.4

0.2

0.0
0 2 4 6 8
Gate Resistance Rg (Ω)
Reverse Recovery Loss vs. Gate Resistance
IGBT MODULE Spec.No.IGBT-SP-10024 R3 P5

MBN3600E17F
Qg-Vg curve Capacitance Curve
TYPICAL TYPICAL
15 1000
【Conditions】
Vcc=900V Tj=25℃
IC=3600A f=100kHz
Tj=25℃

10

Cies

5 100

Cies, Coes, Cres (nF)

VGE (V)

Coes

-5 10

Cres

-10

-15 1
-10 -5 0 5 10 0.1 1 10 100
QG (uC) Collector to Emitter Voltage, VCE (V)

QG-VGE curve Capacitance vs. Collector to Emitter Voltage

IGBT MODULE Spec.No.IGBT-SP-10024 R3 P6

MBN3600E17F
RBSOA
8000

7000

6000
VCE( spike Voltage )
IC (A)

5000
IC( to be turned off )

Conditions: Vcc1100V, Ic7200A, Ic Vce

4000
Rg,
3000 VGE=+-15V, -50o CTj150o C, 0 t
Ls55nH, on pulse width 10us Definition of RBSOA waveform
2000 ( Vce spike voltage and Ls are defined
at auxiliary terminal)
1000

0
0 500 1000 1500 2000

VCE( spike Voltage ) (V) (at auxiliary terminal)

Reverse bias safe operation area ( RBSOA )

Recovery SOA

Conditions:Vcc1100V, IF7200A, di/dt12000A/us

Ls55nH, -50oCTj150oC
8000

7000

6000 Pmax2.9MW
5000
IR (A)

4000

3000

2000

1000

0
0 500 1000 1500 2000

VR (V) (at auxiliary terminal)

Recovery SOA
IGBT MODULE Spec.No.IGBT-SP-10024 R3 P7

MBN3600E17F
TRANSIENT THERMAL IMPEDANCE

0.100
0.1

Thermal Impedance Zth(j-c) (K/W)

FWD
0.01
0.010

IGBT

0.001
0.001

0.000
0.0001
0.001 0.010 0.100 1.000 10.000
0.001 0.01 0.1 1 10

Times t(s)

Transient Thermal Impedance Curve (Maximum Value)

Curve approximation model

( ΣZth[n]*(1-exp(-t/τth[n]) ) )
n 1 2 3 4 Unit
τ th[n] 1.62E-01 2.45E-02 3.11E-03 5.44E-04 sec
rth[n,IGBT] 4.63E-03 1.20E-03 1.20E-03 1.66E-04 K/W
rth[n,Diode] 7.02E-03 1.93E-03 1.78E-03 2.61E-04 K/W

Material declaration

Please note the following materials are contained in the product,

in order to keep characteristic and reliability level.

Material Contained part

Lead (Pb) and its compounds Solder

IGBT MODULE Spec.No.IGBT-SP-10024 R3 P8

MBN3600E17F
Outline Drawing

Unit in mm

Weight: 1300g

C C C
C

E E E E

Circuit Diagram
IGBT MODULE Spec.No.IGBT-SP-10024 R3 P9

MBN3600E17F
HITACHI POWER SEMICONDUCTORS

Notices
1. The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are advised to contact Hitachi sales department for the latest version of this
data sheets.
2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3. In cases where extremely high reliability is required (such as use in nuclear power
control, aerospace and aviation, traffic equipment, life-support-related medical
equipment, fuel control equipment and various kinds of safety equipment), safety should
be ensured by using semiconductor devices that feature assured safety or by means of
users’ fail-safe precautions or other arrangement. Or consult Hitachi’s sales department
staff.
4. In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5. In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6. No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi Power Semiconductor Device, Ltd.
7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part,
without the expressed written permission of Hitachi Power Semiconductor Device, Ltd.
8. The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.

 For inquiries relating to the products, please contact nearest overseas representatives that is located
“Inquiry” portion on the top page of a home page.

Hitachi power semiconductor home page address http://www.hitachi-power-semiconductor-device.co.jp/en/