Esaki Vidyaashram CBSE

PHYSICS INVESTIGATORY PROJECT

TRANSISTOR COMMON-BASE CONFIGURATION

Name : N.Karthik Tenappan

Class : XII- A
Roll No :
Session : 2019-20
 INDEX

S. No. Title
1 Certificate

2 Acknowledgement

3 Introduction
Experiment
-Aim
-Materials required
4 -Procedure
-Observation
-Result
-Conclusion

5. Bibliography
 CERTIFICATE

This is to hereby certify that the original and

genuine investigatory project has been
completed sincerely and satisfactorily by
N.Karthik Tenappan of class XII–A ,Esaki
Vidyaashram, regarding his project titled
“TRANSISTOR COMMON-BASE CONFIGURATION”as
per the CBSE practical work requirement for the
session 2019-2020.

Internal’s Signature External’s Signature

Principal’s Signature
 Acknowledgement

The success and final outcome of this project

required a lot of blessings from God Almighty and also
help from guidance and assistance from many people and
I am extremely privileged to have got this all along the
completion of my project. All that I have done is only due
to such supervision and assistance and I would not forget
to thank them.
I respect and thank our Principal for providing me an
opportunity to do the project work and giving us all
support and guidance which made me complete the
project duly. I am extremely thankful for providing such a
nice support and guidance.
I owe my deep gratitude to our project guide
Mr.Mahendran , who took keen interest on our project
work and guided us all along, till the completion of our
project work by providing all the necessary information
for developing a good system.
I heartily thank our internal project guide, for the
guidance and suggestions during this project work .I am
thankful to and fortunate enough to get constant
encouragement, support and guidance from all Teaching
staffs of Science Department which helped us in
successfully completing our project work. Also, I would
like to extend our sincere esteems to all staff in
laboratory for their timely support.

N.KARTHIK TENAPPAN
 INTRODUCTION

A transistor is a three terminal active

device. The terminals are emitter, base,
collector. In CBE configuration, the base is
common to both input (emitter) and output
(collector). For normal operation, the E-B
junction is forward biased and C-B junction is
reverse biased.
In CBE configuration, IE is +ve, IC is –ve
and IB is –ve .With an increasing the reverse
collector voltage, the space-charge width at
the output junction increases and the
effective base width ‘W’ decreases. This
phenomenon is known as “Early effect”.
Then, there will be less chance for
recombination within the base region. With
increase of charge gradient within the base
region, the current of minority carriers
injected across the emitter junction
increases .
 The current amplification factor of CBE
configuration is given by,
α= ∆IC/ ∆IE

CIRCUIT DIAGRAM
 EXPERIMENT

AIM:
1. To observe and draw the input and output
Characteristics of a transistor connected in
common base configuration.
2. To find current gain (α),voltage gain (v) and
resistance gain (Ω) of the given transistor.

MATERIALS REQUIRED:

1. A p-n-p Transistor
2. Regulated power supply (0-30V, 1A) and a 3-V
battery
3. Voltmeter (0-30V)
4. Ammeters (0-50mA)
5. 2 high resistance rheostats
6. Connecting wires
PROCEDURE:

INPUT CHARACTERISTICS:

1. Connections are made as per the circuit diagram.

2. For plotting the input characteristics, the output
voltage VCE is kept constant at 0V and for different
values of VEB note down the values of IE.
3. Repeat the above step keeping VCB at 2V, 4V, and
6V.All the readings are tabulated.
4. A graph is drawn between VEB and IE for constant VCB.
OUTPUT CHARACTERISTICS:

1. Connections are made as per the circuit

diagram.
2. For plotting the output characteristics, the
input IE is kept constant at 10mA and for
different values of VCB, note down the values
of IC.
3. Repeat the above step for the values of IE at
20mA, 40mA, and 60mA, all the readings are
tabulated.
4. A graph is drawn between VCB and Ic for
constant IE
 OBSERVATIONS:
1. Least count of voltmeter Vi =V
2. Range of voltmeter Vi=volts
3. Zero error of voltmeter Vi= No error
4. Least count of voltmeter V0 =V
5. Range of voltmeter V0=V
6. Zero error of voltmeter V0=
7. Range of milli-ammeter=mA
8. Zero error of milli-ammeter=

Table for input characteristics

Sl. Base-emitter Emitter current IE (mA) for
voltage VEB(V)
No. VCB= 0V VCB= -2V VCB= -4V
1 2.5
2 3.0
3 4.2
4 4.6
5 4.8

6 4.9
 Table for output characteristics
Sl. Base-collector Collector current IC (mA) for
voltage VCB(V)
No. IE=5mA IE=10mA IE=20mA
1 0
2 1
3 2
4 4

5 5
6 6
7 7
8 8

Table for transfer characteristics

Sl. Emitter current Collector current IC (mA) for
IE(mA)
No. VCB= 0V VCB= -2V VCB= -4V
1 0
2 5
3 6
4 7
5 8

6 10
RESULT:

1. The input, output and transfer characteristics are

shown in the adjoining graphs.
2. The current gain, α =
3. The voltage gain, Av =

PRECAUTIONS:

1. The supply voltages should not exceed the rating of

the transistor.
2. Meters should be connected properly according to
their polarities.

SOURCES OF ERROR:

The transistor may be faulty.

CONCLUSION:
1. The input and output characteristics of a transistor
connected in a common base configuration.
2. The current gain , voltage gain and resistance gain
are found out,
 BIBILOGRPAHY

Various books and websites were referred while

making this project:

1) Physics Textbook for class XII, Part-I,

NCERT
2) Physics Laboratory Manual for class XII,
NCERT
3) Wikipedia.org
4) ConnectUEdu.com
5) Youtube.com