REFLECTIVE OBJECT SENSOR

QRE1113.GR

PACKAGE DIMENSIONS

0.114 (2.90)
0.099 (2.50) 0.024 (0.60)
0.016 (0.40)

4 3

0.079 (2.0) 0.130 (3.30)

0.063 (1.60) 0.122 (3.10)

1 2

30°

0.063 (1.60)
0.055 (1.40)

0.024 (0.61) 0.043 (1.10)

SCHEMATIC
NOM (4X) 0.035 (0.90)

0.193 (4.90)
0.177 (4.50)

PIN 1 ANODE PIN 3 COLLECTOR

PIN 2 CATHODE PIN 4 EMITTER

NOTES:
1. Dimensions for all drawings are in inches (millimeters). 1 2 3 4
2. Tolerance of ± .010 (.25) on all non-nominal dimensions

FEATURES
• Phototransistor output
• Tape and reel packaging
• No contact surface sensing
• Miniature package
• Lead form style: Gull Wing

© 2002 Fairchild Semiconductor Corporation Page 1 of 5 12/9/02

This datasheet has been downloaded from http://www.digchip.com at this page

 REFLECTIVE OBJECT SENSOR

QRE1113.GR

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter Symbol Rating Units
Operating Temperature TOPR -25 to +85 °C
Storage Temperature TSTG -30 to +100 °C
Soldering Temperature (Iron)(2,3,4) TSOL-I 240 for 5 sec °C
Soldering Temperature (Flow)(2,3) TSOL-F 260 for 10 sec °C
EMITTER
Continuous Forward Current IF 50 mA
Reverse Voltage VR 5 V
Peak Forward Current(5) IFP 1 mA
Power Dissipation(1) PD 75 mW
SENSOR
Collector-Emitter Voltage VCEO 30 V
Emitter-Collector Voltage VECO 5 V
Collector Current IC 20 mA
Power Dissipation(1) PD 50 mW

ELECTRICAL / OPTICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNITS
INPUT DIODE
Forward Voltage IF = 20 mA VF — 1.2 1.6 V
Reverse Leakage Current VR = 5 V IR — — 10 µA
Peak Emission Wavelength IF = 20 mA λPE — 940 — nm
OUTPUT TRANSISTOR
Collector-Emitter Dark Current VCE = 20 V, IF = 0 mA ID — — 100 nA
COUPLED
On-State Collector Current IF = 20 mA, VCE = 5 V IC(ON) 0.15 0.40 — mA
Saturation Voltage VCE (SAT) — — 0.3 V
Rise Time VCC = 5 V, IC(ON) = 100 µA, tr — 20 —
µs
Fall Time RL = 1KΩ tf — 20 —

NOTES:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16” (1.6mm) from housing.
5. Pulse conditions: tp = 100 µs; T = 10 ms.

© 2002 Fairchild Semiconductor Corporation Page 2 of 5 12/9/02

 REFLECTIVE OBJECT SENSOR

QRE1113.GR

TYPICAL PERFORMANCE CURVES

Fig. 1 Normalized Collector Current vs. Distance

between device and reflector Fig. 2 Collector Current vs. Forward Current
IC (ON)- NORMALIZED COLLECTOR CURRENT

1.0 1.0
IF = 10 mA

IC (ON) - COLLECTOR CURRENT (mA)

VCE = 5 V
TA = 25˚C
0.8 0.8

d 0
0.6 0.6

0.4 0.4
Sensing Object:
White Paper (90% reflective)
0.2
Mirror 0.2

0.0
0 1 2 3 4 5 0.0
0 4 8 12 16 20
d-DISTANCE (mm)
IF - FORWARD CURRENT (mA)

Fig. 4 Collector Emitter Dark Current (Normalized)

Fig. 3 Collector Current vs. Collector to Emitter Voltage vs. Ambient Temperature

2.0 102
ICEO - NORMALIZED DARK CURRENT
IC (ON) - COLLECTOR CURRENT (mA)

d = 1 mm, 90% reflection Normalized to:

1.8 TA = 25˚C VCE = 10 V
VCE = 10 V
TA = 25˚C
1.6 VCE = 5 V
101
1.4 IF = 25mA
1.2
IF =20mA
1.0 100

0.8 IF =15mA

0.6 IF =10mA 10-1

0.4
IF =5mA
0.2
10-2
0.0 25 40 55 70 85
0.1 1 10
VCE - COLLECTOR EMITTER VOLTAGE (V) TA - Ambient Temperature (˚C)

© 2002 Fairchild Semiconductor Corporation Page 3 of 5 12/9/02

 REFLECTIVE OBJECT SENSOR

QRE1113.GR

Fig. 5 Forward Current vs. Forward Voltage Fig. 6 Rise and Fall Time vs. Load Resistance

50 100
VCC = 10 V
TA = 25˚C tpw = 100 us
IF - FORWARD CURRENT (mA)

T=1ms
40 TA = 25˚C

RISE AND FALL TIME (us)

tf IC = 0.3 mA
30
tr
10

20
tf
IC = 1 mA
tr
10

0 1
1.0 1.1 1.2 1.3 1.4 1.5 0.1 1 10
VF - FORWARD VOLTAGE (V) RL - LOAD RESISTANCE (KΩ)

Fig. 7 Forward Voltage vs. Ambient Temperature

3.0
VF - FORWARD VOLTAGE (V)

2.5

2.0

IF = 50 mA
1.5
IF = 20 mA

1.0 IF = 10 mA

0.5

0.0
-40 -20 0 20 40 60 80

TA - AMBIENT TEMPERATURE (˚C)

© 2002 Fairchild Semiconductor Corporation Page 4 of 5 12/9/02

 REFLECTIVE OBJECT SENSOR

QRE1113.GR
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support
which, (a) are intended for surgical implant into the body, or device or system whose failure to perform can be
(b) support or sustain life, and (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.

© 2002 Fairchild Semiconductor Corporation Page 5 of 5 12/9/02