APT47N60HC3

600V 33.5A 0.080Ω

Super Junction MOSFET

TO-258

COOLMOS
Power Semiconductors

• Ultra low RDS(ON)

• Low Miller Capacitance D
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated G

• Hermetic TO-258 Package S

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol Parameter APT47N60HC3 UNIT

VDSS Drain-Source Voltage 600 Volts
ID Continuous Drain Current @ TC = 25°C 33.5
Amps
IDM 1
Pulsed Drain Current 100.5
VGS Gate-Source Voltage Continuous ±20
Volts
VGSM Gate-Source Voltage Transient ±30
Total Power Dissipation @ TC = 25°C 240 Watts
PD
Linear Derating Factor 1.92 W/°C
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
°C
TL Lead Temperature: 0.063" from Case for 10 Sec. 260
dv/ Drain-Source Voltage slope (VDS = 480V, ID = 33.5A, TJ = 125°C) V/ns
dt 50
IAR 6 Amps
Repetitive Avalanche Current 20
EAR 6
Repetitive Avalanche Energy 1
mJ
EAS 4
Single Pulse Avalanche Energy 1800

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 600 Volts
RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 30A) 0.07 0.08 Ohms
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) 0.5 25
IDSS µA
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TJ = 150°C) 250
IGSS Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) ±100 nA
4-2004

VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.7mA) 2.1 3 3.9 Volts
050-7139 Rev A

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"
 DYNAMIC CHARACTERISTICS APT47N60HC3

Symbol Characteristic Test Conditions MIN TYP MAX UNIT

Ciss Input Capacitance VGS = 0V 7015
Coss Output Capacitance VDS = 25V 2565 pF
Crss Reverse Transfer Capacitance f = 1 MHz 210
Qg Total Gate Charge 3 VGS = 0 TO10V 260 330
Q gs Gate-Source Charge VDD = 350V 29 nC
Q gd ID = 47A @ 25°C
Gate-Drain ("Miller ") Charge 110
td(on) Turn-on Delay Time VGS = 13V 18
tr Current Rise Time VDD = 380 V 27
ns
td(off) Turn-off Delay Time ID = 47A 110 165
tf RG = 1.8Ω, TJ = 125°C
Current Fall Time 8 12

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

IS Continuous Source Current (Body Diode) 33.5
Amps
ISM Pulsed Source Current 1 (Body Diode) 100.5
V SD Diode Forward Voltage 2 (VGS = 0V, IS = -33.5A) 1 1.2 Volts
t rr Reverse Recovery Time (IS = -33.5A, dl S/dt = 100A/µs) VR = 350V 366 ns
Q rr
Reverse Recovery Charge (IS = -33.5A, dl S/dt = 100A/µs) VR = 350V 36 µC
dv / Peak Diode Recovery dv/ 5 V/ns
dt dt 6

THERMAL CHARACTERISTICS

Symbol Characteristic MIN TYP MAX UNIT

RθJC Junction to Case 0.52
°C/W
RθJA Junction to Ambient 62
1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting Tj = +25°C, L = 36.0mH, RG = 25Ω, Peak IL = 10A
temperature 5 IS ≤ -ID 47A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 6 Repetitve avalanche causes additional power losses that can be
3 See MIL-STD-750 Method 3471 calculated as PAV=EAR*f
APT Reserves the right to change, without notice, the specifications and information contained herein.

TO-258 Package Outline

17.65 (.695)
1.14 (.045) 17.39 (.685)
0.88 (.035) 8.89 (.350)
8.63 (.340)

4.19 (.165)
3.94 (.155)
21.21 (.835)
20.70 (.815) 17.96 (.707)
13.84 (.545) 17.70 (.697)
13.58 (.535)

Drain
19.05 (0.750)
12.70 (0.500) Source
Gate
4-2004

1.65 (.065) Dia. Typ.

3.56 (.140) BSC 1.39 (.055) 3 Leads
050-7139 Rev A

6.86 (.270)
6.09 (.240) 5.08 (.200) BSC

Dimensions in Millimeters and (Inches)

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.