SKT 240 THYRISTOR BRIDGE,SCR,BRIDGE

BJ:K BJJKU BCJK ;YJK: O ZAA I E'+[)'1' >+,1% 72& *20()0121- 24%&+()20G
B B ;YIB O SMA I E-)0F ?@A¥ C:3¥ Y* O ]P ^3G
_AA MAA :`Y SMARAMa
]AA @AA :`Y SMARA@a
?PAA ?SAA :`Y SMAR?Sa
?_AA ?MAA :`Y SMAR?Ma
?VAA ?ZAA :`Y SMAR?Za
?]AA ?@AA :`Y SMAR?@a

Symbol Conditions Values Units

Capsule Thyristor ;YIB -)0F ?@A¥ Y* O ?AA E@_G ^3¥ SAM ES@S G I
;C S [ b@R?@A¥ Y+ O M_ ^3¥ cS R cZ SV_ R P]A I
S [ b@R?@AX¥ Y+ O P_ ^3¥ cS R cZ _MA RV_A I
Line Thyristor ;JK: S [ b@R?@A¥ Y+ O M_ ^3¥ T?3 PAA I
;Y:K Y>d O S_ ^3¥ ?A '- _AAA I
Y>d O ?S_ ^3¥ ?A '- M_AA I
)e( Y>d O S_ ^3¥ @UP FFF ?A '- ?S_AAA Ie-
SKT 240
Y>d O ?S_ ^3¥ @UP FFF ?A '- ?A?AAA Ie-
BY Y>d O S_ ^3¥ ;Y O ?AAA I '+[F SUP B
BYEY<G Y>d O ?S_ ^3 '+[F ? B
&Y Y>d O ?S_ ^3 '+[F ?UM 'Q
;CC¥ ;JC Y>d O ?S_ ^3¥ BJC O BJJK¥ BCC O BCJK '+[F MA 'I
(68 Y>d O S_ ^3¥ ;f O ? I¥ 8)fR8( O ? IRg- ? g-
Features (6& BC O AUZV h BCJK S g-
# $%&'%()* '%(+, *+-% .)(/ *%&+')* E8)R8(G*& Y>d O ?S_ ^3 '+[F ?S_ IRg-
)0-1,+(2& E8>R8(G*& Y>d O ?S_ ^3 '+[F ?AAA BRg-
# 3+4-1,% 4+*5+6% 72& 8219,% (i Y>d O ?S_ ^3 U _A FFF ?_A g-
-)8%8 *22,)06 ;$ Y>d O S_ ^3¥ (H4F R '+[F ?_A R MAA 'I

# :/+,,2. 8%-)60 .)(/ -)06,% -)8%8 ;j Y>d O S_ ^3¥ (H4F R '+[F PAA R ?AAA 'I
*22,)06 BfY Y>d O S_ ^3¥ 8F*F ')0F S B
# ;0(%&0+()20+, -(+08+&8 *+-% ;fY Y>d O S_ ^3¥ 8F*F ')0F ?_A 'I
# <77=-(+(% +08 &%>%&-% >2,(+6%- 14 BfC Y>d O ?S_ ^3¥ 8F*F '+[F AUS_ B
(2?@AA B ;fC Y>d O ?S_ ^3¥ 8F*F '+[F ?A 'I
J(/Ed=*G *20(F¥ C:3 AUAV `RT
Typical Applications* J(/Ed=*G -)0F ?@A¥ C:3 R ::3 AUAVS R AU?_? `RT
# C3 '2(2& *20(&2, J(/Ed=*G &%*F ?SA¥ C:3 R ::3 AUA@ R AU?Z@ `RT
E%F 6F 72& '+*/)0% (22,-G J(/E*=-G C:3 R ::3 AUAS R AUAM `RT
# 320(&2,,%8 &%*()7)%&- Y>d = MA FFF k ?S_ ^3
E%F 6F 72& 9+((%&H */+&6)06G Y-(6 = MA FFF k ?PA ^3
# I3 *20(&2,,%&- B)-2, = Bl
E%F 6F 72& (%'4%&+(1&% *20(&2,G X '210()06 72&*% M FFF _ 5m
# J%*2''%08%8 -0199%& 0%(.2&5 + 'R-e
%F 6F 72& BBJK: L MAA BN ' +44&2[F __ 6
J O PP QRPS TU 3 O AUMV WX 3+-% c@

SKT

1 16-02-2009 MAY © by SEMIKRON

RECTIFIER,DIODE,THYRISTOR,MODULE

Fig. 1L Power dissipation vs. on-state current Fig. 1R Power dissipation vs. ambient temperature

Fig. 2L Rated on-state current vs. case temperature Fig. 2R Rated on-state current vs. case temperature

Fig. 3 Recovered charge vs. current decrease Fig. 4 Transient thermal impedance vs. time

2 16-02-2009 MAY © by SEMIKRON

SKT 240 THYRISTOR BRIDGE,SCR,BRIDGE

Fig. 5 Thermal resistance vs. conduction angle Fig. 6 On-state characteristics

Fig. 7 Power dissipation vs. on-state current Fig. 8 Surge overload current vs. time

3 16-02-2009 MAY © by SEMIKRON

RECTIFIER,DIODE,THYRISTOR,MODULE

Fig. 9 Gate trigger characteristics

Dimensions in mm

$`Rf+(% ,%+8-N -%4+&+(%,H

;C=m2FNPP]A?S_A +>+),+9,%
E?S4*- %+*/G

3+-% c @ EnaCa3N Y<=SAAIcG

* The specifications of our components may not be considered as an assurance of component characteristics.
Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON

4 16-02-2009 MAY © by SEMIKRON

SKT 240 THYRISTOR BRIDGE,SCR,BRIDGE
products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We
therefore strongly recommend prior consultation of our personal.

5 16-02-2009 MAY © by SEMIKRON