SCT2120AF

N-channel SiC power MOSFET Datasheet

Outline
TO220AB
VDSS 650V
RDS(on) (Typ.) 120m
ID 29A
PD 165W (1) (2) (3)

Features Inner circuit

1) Low on-resistance (2)

2) Fast switching speed (1) Gate

(2) Drain
3) Fast reverse recovery *1 (3) Source
(1)

4) Easy to parallel
*1 Body Diode
5) Simple to drive (3)

6) Pb-free lead plating ; RoHS compliant Packaging specifications

Packing Tube

Application Reel size (mm) -

・Solar inverters Tape width (mm) -

Type
・DC/DC converters Basic ordering unit (pcs) 50

・Switch mode power supplies Packing code C

・Induction heating Marking SCT2120AF

・Motor drives

Absolute maximum ratings (Ta = 25C)

Parameter Symbol Value Unit
Drain - Source voltage VDSS 650 V
Tc = 25C ID *1 29 A
Continuous drain current
*1
Tc = 100C ID 20 A
*2
Pulsed drain current ID,pulse 72 A
Gate - Source voltage (DC) VGSS 6 to 22 V
*3
Gate - Source surge voltage (Tsurge ˂ 300nsec) VGSS-surge 10 to 26 V
Power dissipation (Tc = 25C) PD 165 W
Junction temperature Tj 175 C
Range of storage temperature Tstg 55 to 175 C

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SCT2120AF Datasheet

Thermal resistance
Values
Parameter Symbol Unit
Min. Typ. Max.

Thermal resistance, junction - case RthJC - 0.70 0.91 C/W

Soldering temperature, wavesoldering for 10s Tsold - - 265 C

Electrical characteristics (Ta = 25C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.

Drain - Source breakdown

V(BR)DSS VGS = 0V, ID = 1mA 650 - - V
voltage

VDS = 650V, VGS = 0V

Zero gate voltage
IDSS Tj = 25C - 1 10 A
drain current
Tj = 150°C - 2 -

Gate - Source leakage current IGSS+ VGS = 22V, VDS = 0V - - 100 nA

Gate - Source leakage current IGSS- VGS = 6V, VDS = 0V - - -100 nA

Gate threshold voltage VGS (th) VDS = VGS, ID = 3.3mA 1.6 2.8 4.0 V

*1 Limited only by maximum temperature allowed.

*2 PW  10s, Duty cycle  1%

*3 Example of acceptable Vgs waveform

*4 Pulsed

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SCT2120AF Datasheet

Electrical characteristics (Ta = 25C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
VGS = 18V, ID = 10A
Static drain - source *4
RDS(on) Tj = 25C - 120 156 m
on - state resistance
Tj = 125°C - 149 -

Gate input resistance RG f = 1MHz, open drain - 13.8 - 

Transconductance gfs *4 VDS = 10V, ID = 10A - 2.7 - S

Input capacitance Ciss VGS = 0V - 1200 -

Output capacitance Coss VDS = 500V - 90 - pF

Reverse transfer capacitance Crss f = 1MHz - 13 -

Effective output capacitance, VGS = 0V

Co(er) - 115 - pF
energy related VDS = 0V to 300V
*4
Turn - on delay time td(on) VDD = 300V, ID = 10A - 22 -
*4
Rise time tr VGS = 18V/0V - 31 -
ns
Turn - off delay time td(off) *4 RL = 30 - 60 -

Fall time tf *4 RG = 0 - 19 -

*4 VDD = 300V, ID=10A

Turn - on switching loss Eon - 61 -
VGS = 18V/0V
RG = 0Ω, L=500µH µJ
*4 *Eon includes diode
Turn - off switching loss Eoff - 41 -
reverse recovery

Gate Charge characteristics (Ta = 25C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.

Total gate charge Qg *4 VDD = 300V - 61 -

*4
Gate - Source charge Qgs ID = 10A - 14 - nC

Gate - Drain charge Qgd *4 VGS = 18V - 21 -

Gate plateau voltage V(plateau) VDD = 300V, ID = 10A - 10.4 - V

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SCT2120AF Datasheet

Body diode electrical characteristics (Source-Drain) (Ta = 25C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.

Inverse diode continuous,

IS *1 - - 29 A
forward current
Tc = 25C
Inverse diode direct current, *2
ISM - - 72 A
pulsed
*4
Forward voltage VSD VGS = 0V, IS = 10A - 4.3 - V
*4
Reverse recovery time trr - 33 - ns
IF = 10A, VR = 400V
Reverse recovery charge Qrr *4 - 53 - nC
di/dt = 160A/s
*4
Peak reverse recovery current Irrm - 3.0 - A

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit
Rth1 96.1m Cth1 1.55m
Rth2 404m K/W Cth2 5.23m Ws/K
Rth3 196m Cth3 83.3m

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SCT2120AF Datasheet

Electrical characteristic curves

Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area

180 100

160 Operation in
this area is
140 limited
Power Dissipation : PD [W]

by RDS(ON)

Drain Current : ID [A]

120 10

100 PW = 100s
PW = 1ms
80
PW = 10ms
60 1
PW = 100ms
Ta = 25ºC
40
Single Pulse
20

0 0.1
0 50 100 150 200 0.1 1 10 100 1000

Junction Temperature : Tj [°C] Drain - Source Voltage : VDS [V]

Fig.3 Typical Transient Thermal

Resistance vs. Pulse Width

1
Transient Thermal Resistance : Rth [K/W]

0.1

0.01

Ta = 25ºC
Single Pulse
0.001
0.0001 0.001 0.01 0.1 1 10

Pulse Width : PW [s]

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SCT2120AF Datasheet

Electrical characteristic curves

Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II)

28 14
26 VGS= 20V Ta = 25ºC 13 VGS= 20V
VGS= 18V VGS= 18V Ta = 25ºC
Pulsed
24 VGS= 16V 12 VGS= 16V Pulsed
22 11
20 10 VGS= 14V
Drain Current : ID [A]

VGS= 14V

Drain Current : ID [A]

18 9
16 8
14 7 VGS= 12V
12 6
VGS= 12V
10 5
10V
8 8V 4 VGS= 10V
6 3
4 2
2 1 VGS= 8V
0 0
0 2 4 6 8 10 0 1 2 3 4 5

Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

Fig.6 Tj = 150°C Typical Output Fig.7 Tj = 150°C Typical Output

Characteristics(I) Characteristics(II)
28 14
13 VGS= 20V
26 VGS= 20V
VGS= 18V
24 VGS= 18V 12
VGS= 16V VGS= 16V
22 11
VGS= 14V VGS= 14V
20 10
VGS= 12V VGS= 12V
Drain Current : ID [A]

Drain Current : ID [A]

18 9
16 8
7 VGS= 10V
14
12 6
10 5
8 VGS= 10V 4 VGS= 8V
6 3
4 2 Ta = 150ºC
Ta = 150ºC
VGS= 8V 1 Pulsed
2 Pulsed
0 0
0 2 4 6 8 10 0 1 2 3 4 5

Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

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SCT2120AF Datasheet

Electrical characteristic curves

Fig.8 Typical Transfer Characteristics (I) Fig.9 Typical Transfer Characteristics (II)

10 24
22
VDS = 10V VDS = 10V
Pulsed 20 Pulsed
1 18
16
Drain Current : ID [A]

Drain Current : ID [A]

Ta= 150ºC 14
0.1 Ta= 75ºC 12
Ta= 25ºC Ta= 150ºC
Ta= -25ºC 10
Ta= 75ºC
8 Ta= 25ºC
Ta= -25ºC
0.01 6
4
2
0.001 0
0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20

Gate - Source Voltage : VGS [V] Gate - Source Voltage : VGS [V]

Fig.10 Gate Threshold Voltage Fig.11 Transconductance vs. Drain Current

vs. Junction Temperature
5 10

4.5 VDS = VGS

Gate Threshold Voltage : V GS(th) [V]

ID = 3.3mA VDS = 10V

4 Pulsed
Transconductance : gfs [S]

3.5
1
3
2.5
2 Ta = 150ºC
0.1 Ta = 75ºC
1.5
Ta = 25ºC
1 Ta = -25ºC

0.5
0 0.01
-50 0 50 100 150 200 0.01 0.1 1 10

Junction Temperature : Tj [°C] Drain Current : ID [A]

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SCT2120AF Datasheet

Electrical characteristic curves

Fig.12 Static Drain - Source On - State Fig.13 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage Resistance vs. Junction Temperature

Static Drain - Source On-State Resistance

Static Drain - Source On-State Resistance

0.6 0.3
Ta = 25ºC VGS = 18V
Pulsed Pulsed
0.5 0.25

: RDS(on) [Ω]
0.4 0.2
: RDS(on) [Ω]

ID = 20A
0.3 0.15
ID = 21A
ID = 10A
0.2 0.1

ID = 10A
0.1 0.05

0 0
6 8 10 12 14 16 18 20 22 -50 0 50 100 150 200

Gate - Source Voltage : VGS [V] Junction Temperature : Tj [ºC]

Fig.14 Static Drain - Source On - State

Resistance vs. Drain Current
Static Drain - Source On-State Resistance

1
VGS = 18V
Pulsed
: RDS(on) [Ω]

Ta = 150ºC
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC

0.1
0.1 1 10 100

Drain Current : ID [A]

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SCT2120AF Datasheet

Electrical characteristic curves

Fig.15 Typical Capacitance Fig.16 Coss Stored Energy

vs. Drain - Source Voltage
10000 25
Ta = 25ºC

Coss Stored Energy : EOSS [µJ]

20
1000
Ciss
Capacitance : C [pF]

15

100
Coss
10

Crss
10
Ta = 25ºC 5
f = 1MHz
VGS = 0V
1 0
0.1 1 10 100 1000 0 200 400 600 800

Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

Fig.17 Switching Characteristics Fig.18 Dynamic Input Characteristics

10000 20
Ta = 25ºC
tf Ta = 25ºC VDD =300V
VDD = 300V ID = 10A
Gate - Source Voltage : VGS [V]

VGS = 18V 15 Pulsed

1000
RG = 0Ω
td(off)
Switching Time : t [ns]

100 10
td(on)

10 tr 5

1 0
0.1 1 10 100 0 10 20 30 40 50 60 70

Drain Current : ID [A] Total Gate Charge : Qg [nC]

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SCT2120AF Datasheet

Electrical characteristic curves

Fig.19 Typical Switching Loss Fig.20 Typical Switching Loss

vs. Drain - Source Voltage vs. Drain Current
120 500
110 Ta = 25ºC 450 Ta = 25ºC
100 ID=10A VDD=300V
VGS = 18V/0V 400 VGS = 18V/0V
90

Switching Energy : E [µJ]

Switching Energy : E [µJ]

RG = 0Ω RG = 0Ω
Eon 350
80 L=500µH L=500µH
Eon
70 300

60 250
50 200
40 Eoff
150
30
100 Eoff
20
10 50

0 0
0 100 200 300 400 500 0 5 10 15 20 25 30

Drain - Source Voltage : VDS [V] Drain - Current : ID [A]

Fig.21 Typical Switching Loss

vs. External Gate Resistance
200

Ta = 25ºC
VDD=300V
150 ID=10A
VGS = 18V/0V
Switching Energy : E [µJ]

L=500µH Eon

100

Eoff
50

0
0 5 10 15 20 25 30

External Gate Resistance : RG [Ω]

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SCT2120AF Datasheet

Electrical characteristic curves

Fig.22 Inverse Diode Forward Current Fig.23 Reverse Recovery Time

vs. Source - Drain Voltage vs.Inverse Diode Forward Current
100 1000
VGS = 0V Ta = 25ºC
Inverse Diode Forward Current : IS [A]

Pulsed di / dt = 160A / µs

Reverse Recovery Time : trr [ns]

VR = 400V
10 VGS = 0V
Pulsed

Ta = 150ºC
1 Ta = 75ºC 100
Ta = 25ºC
Ta = -25ºC

0.1

0.01 10
0 1 2 3 4 5 6 7 8 1 10 100

Source - Drain Voltage : VSD [V] Inverse Diode Forward Current : IS [A]

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SCT2120AF Datasheet

Measurement circuits
Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms

VGS Pulse width

ID
VDS
RL 50% 90% 50%
VGS 10%
D.U.T.
VDS
10% 10%
RG VDD

90% 90%
td(on) tr td(off) tf

ton toff

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

VGS VG
ID
VDS
RL Qg

IG(Const.) D.U.T. VGS

VDD Qgs Qgd

Charge

Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms

Eon = ID×VDS Eoff = ID×VDS

Same type
D.U.T. L Vsurge
device as
IF Irr
D.U.T. VDS
VDD
DRIVER
D.U.T.
MOSFET
RG

ID
ID

Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform

IF

D.U.T.
D.U.T. L trr
IF
0
VDD Irr 10%
DRIVER
MOSFET Irr
RG drr / dt

Irr 90%
Irr 100%

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 Notice

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R1102S
 Datasheet

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