1098 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 26, NO.
8, AUGUST 199I
Generalized Translinear Circuit Principle
Evert Seevinck, Senior Member, IEEE, and Remco J. Wiegerink
Abstract-In this paper, it is shown that the well-known
translinear circuit principle, which was originally formulated
for loops of bipolar transistors, can be generalized and extended
to implementation by MOS transistors operating in strong in-
version. The MOS-translinear (MTL) principle is derived and
some examples are given of MTL circuits synthesizing nonlinear
signal processing functions.
I. INTRODUCTION
T HE translinear (TL) circuit principle was originally
formulated as a practical means of implementing
nonlinear signal processing functions by bipolar analog
circuits [ 11. In TL circuits, the exponential current-volt-
age characteristic of bipolar transistors is exploited. Sys-
tematic techniques for the analysis and synthesis of TL
circuits have been developed [2], [31. Useful applications
have been found such as wide-band current amplifiers [4],
four-quadrant multipliers [ 5 ] , triangle-wave-to-sine-wave
convertors [61, high-frequency rms-to-dc convertors [7],
improved class-AB power output stages [8], and many
others [21.
The recent emergence of CMOS analog circuit tech-
niques has prompted the question whether a similar cir-
cuit principle can be found for MOS circuits. Of course,
MOS transistors applied in weak inversion yield exponen-
tial voltage-current behavior as is the case with bipolar
transistors [9]. Therefore, TL circuits implemented by
MOS transistors are in principle feasible [lo], [I 11. How-
ever, the dynamic range and speed of such circuits would
probably be too low for general application due to the
limitations of MOS transistors operated in weak inver-
sion. Of more interest would be a circuit principle based
on the square-law MOS characteristic [ 121. In this paper it
will be shown that a generalized interpretation of the TL
principle leads quite naturally to an extension to MOS
circuits. In fact, it will be shown that two distinct classes
of T L circuits exist, one suitable for bipolar transistors
and the other for MOS transistors in strong inversion.
11. GENERALIZED TRANSLINEAR
(GTL) PRINCIPLE
Originally, the concept translinear was based on a
fundamental property of bipolar transistors, namely
transconductance linear with collector current [ 11. This
Manuscript received September 22, 1990; revised March 6, 1991.
E. Seevinck is with Philips Research Laboratories, Eindhoven, The
Netherlands.
R. J. Wiegerink is with the Department of Electronic Engineering. IC
Technology and Electronics Group. Twente University, 7500 AE En-
schede, The Netherlands.
IEEE Log Number 9100132.
0018-9200/91/0800-1098$01.00 01991 IEEE
property, when applied in circuits arranged in loops of
junction voltages and having inputs and outputs in the
form of currents, allows the implementation of exact,
temperature-insensitive signal processing functions. Re-
cently, Gilbert distinguished between translinear circuits
of a general kind (simply exploiting transconductance
linear with current) and circuits based on translinear
loops [13]. In this paper we address the latter category.
We propose to generalize the translinear concept to
apply to devices having transconductance linear with an
electrical variable such as current or voltage. For the class
of devices having transconductance linear with current,
we have
dl
g=-=a I.
dV
Integrating, we obtain
I = b exp ( a V ) .
(2)
This is the exponential current-voltage characteristic of
bipolar transistors.
The second class of devices has transconductance linear
with voltage. Therefore
dl
g=-=AV. (3)
dV
Again integrating, we obtain
A
I = -v2
2
+ B. (4)
When taking the integration constant B equal to zero, (4)
represents an MOS transistor operating in strong inver-
sion and in saturation, with I the drain current and V the
gate-source drive voltage V , , - Vth. Summarizing, we
propose generalized translinear (GTL) circuits as circuits
having inputs and outputs in the form of currents and
whose primary functions arise from the exploitation of the
proportionality of transconductance to an electrical vari-
able in certain electronic devices so as to result in funda-
mentally exact, temperature-insensitive algebraic transfor-
mations. When the electrical variable referred to is a
current, the devices are bipolar transistors and the cir-
cuits are of the well-known bipolar-translinear (BTL)
variety. Alternatively, when the electrical variable is a
voltage, the devices are field-effect (e.g., MOS) transistors
and the circuits can be classified as MOS translinear
(MTL). A third alternative, when the variable is a charge,
has not yet been explored; it could possibly lead to an
interesting new class of circuits.
SEEVINCK AND WIEGERINK: GENERALIZED TRANSLINEAR CIRCUIT PRINCIPLE
I The relation (9) is a statement of the MTL circuit
\
Fig. 1. Conceptual MOS-translinear loop.
111. MOS-TRANSLINEAR
(MTL) CIRCUIT
PRINCIPLE
The MTL circuit principle will now be derived. The
analysis closely follows the original derivation by Gilbert
for bipolar circuits [l]. Consider a loop of MOS transis-
tors, NMOS, PMOS, or a suitably connected combination
of the two types as indicated in Fig. 1. For simplicity of
illustration, only NMOS transistors are used.
In the loop, the gate-source voltages are connected in
series, with equal numbers of transistors arranged clock-
wise and counterclockwise; this is an essential require-
ment. It follows that the loop must contain an even
number of devices. The current sources shown are bias or
signal currents. The drain terminals are assumed to be
biased such that all transistors operate in saturation. The
drains can be connected to nodes of the loop or to other
parts of the circuit in many different ways, thus determin-
ing the current distribution. From Kirchhoff's voltage law,
it follows that
c
cw
VGS = c
CCU'
VGS (5)
where the subscripts cw and ccw indicate the devices
connected clockwise and counterclockwise in the loop,
respectively.
Next we apply the square-law model of a saturated
MOS transistor (for the present we neglect second-order
effects such as mobility reduction and channel-length
modulation):
with
1 W
k = -aC""o"y. (7)
Substituting (6) into ( 5 ) results in
Since equal numbers of devices are present in the clock-
wise and counterclockwise directions, the number of
threshold voltage terms on both sides of (8) are equal.
Assuming well-matched threshold voltages (monolithic
109Y
construction and uniform temperature) and neglecting
body effect allows the threshold voltages to be dropped.
Also, the parameters p and C,, will then be common and
can be canceled. Thus (8) reduces to
with W / L the temperature- and process-independent
aspect ratio determined by the designer.
principle. It is a simple algebraic relation between the
MOS transistor currents, and is insensitive to temperature
and processing. MTL circuits are capable of implement-
ing useful nonlinear signal processing functions. This will
be demonstrated in the last section.
IV. COMPARING
BTL AND MTL CIRCUITS
It is interesting to compare the MTL and the BTL
principles. The latter is expressed by [1l
with I , the collector currents and A the emitter areas of
the bipolar transistors comprising the TL loop. The prod-
uct relation of (10) lends itself naturally to functions
involving multiplication or division. The more peculiar
MTL sum-of-roots relation of (9) may be more suitable
for synthesizing square-law functions or power series. In
general, prescribed nonlinear functions will first have to
be expressed in terms of square roots to be compatible
with (9).
An important point of comparison is the expected
quality of function implementation. BTL circuits will
probably be superior owing to the unprecedented law
conformance of bipolar transistors over wide ranges of
current. For MOS devices the current range for square-law
behavior is much smaller. It is bounded at the low end by
weak inversion and at the high end by mobility reduction.
Also device matching is at present better for bipolar
devices. On the other hand, the present technological
drive to submicrometer VLSI MOS circuits is expected to
have a spin-off of better large-geometry MOS-device
matching [14]. In addition, the zero dc gate current of
MOS transistors will represent a distinct advantage.
OF MTL CIRCUITS
V. EXAMPLES
The simplest possible MTL circuit is the well-known
MOS current mirror, comprising a two-transistor loop.
The next level of complexity involves loops of four transis-
tors. Three categories of such MTL circuits are indicated
in Fig. 2. For simplicity of the schematics, the driving
currents are not shown. All three subclasses realize the
1 100
I 1
Subclass A
Subclass B
Subclass c
Fig. 2. Three subclasses of simple MTL circuits.
equation
I I"
Subclass C needs some additional circuitry to force the
average of the gate-source voltages of M I and M,(Vl)
equal to the average of the gate-source voltages of M ,
and M4(Vz).This is illustrated by the operational ampli-
fier.
Implementations using subclass A will generally need
transistors with individual wells connected to the sources
to eliminate the body effect. The large well capacitances
will slow down circuits based on subclass A. This draw-
back does not apply to the other two subclasses since
grounded wells or a common substrate can be applied.
This is obvious for subclass C and can easily be shown for
subclass B by representing the body effect as a change in
threshold voltage. In that case, if we apply (8) we obtain
The body effect will be equal for transistors M , and M ,
and transistors M , and M4. So, V,,, will be equal to V,,l,
and I/thl will equal Vlh4 and therefore the threshold
voltages can be dropped from (12).
IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 26, NO. 8, AUGUST 1 Y Y 1
I
output
X
-5
(C)
Fig. 3. MTL implementation of the function z = ( x 2 + y 2 ) / 2 y in the
three subclasses. The numbers in brackets indicate the relative W / L . A
slight modification results in the vector-sum function
text).
{m(see
Some applications of subclasses A and B have been
described [15]-[17]. Most of these functions can also be
implemented in the other subclasses. This is illustrated by
+
Fig. 3 for the function z = ( y 2 x 2 ) / 2 y , which can be
used to realize an analog multiplier [17]. Bipolar forms
very similar to Fig. 3(a) have been presented previously
[I], [IO], [131.
The circuits shown by Fig. 3 can be analyzed using the
MTL principle (9). In all circuits, the output current z is
equal to the sum and the input current x is equal to the
difference of the drain currents of M3 and M4. Therefore
The drain currents of M , and M , (Fig. 3(a) and (b)) and
SEEVINCK AND WIEGERINK: GENERALIZED TRANSLINEAR CIRCUIT PRINCIPLE 1101

M , , (Fig. 3(c)) are all equal to y . So, (9) becomes

/F/T + =2 E

From (14) we can obtain the transfer function of the

circuits as follows:

_L
-
+ z
2’-

+ 2yz =
+ dz2 - x 2 = y
x2= ( y
+ y’ x2
- z)’ Fig. 4. Implementation of the absolute-value function Ix - d.

+2=-----.
+ y2x’
2Y
Another example is the vector-sum function
z = Jxz+yz
with z the output current and x and y input currents.
Fig. 5 . Simple MTL circuit synthesi~ingthe geometric-mean function
We want to synthesize this function by the use of the 6.
MTL principle (9). To this end we express the function in
terms of square roots as follows:
The implementation as an MTL circuit of subclass A is
z = JT+T
+ 22 - x== Y2 shown in Fig. 4. A similar BTL circuit was proposed in [ 2 ] .
-Jz?--xL=y
This circuit suggests a special category, i.e., “truly GTL”
circuits. We mean TL circuits that are independent of the
+ z+Jzz_x2=2+y transistor characteristic. The circuit operates correctly for
exponential or square-law devices and in addition is in-
sensitive to deviations from square-law behavior such as
weak inversion or mobility reduction. The well-known
current mirror also belongs to this category, as well as the
minimum-selector circuit of [ 161. The category of “truly
GTL” circuits is probably limited to circuits performing
Equation (17) has the same form as (9) and can be these relatively trivial functions (in the context of nonlin-
implemented as an MTL circuit. In fact, this implementa- ear functions).
tion will have the same topology as the circuits shown in As a final example, the geometric-mean function fi
Fig. 3 except that the input current y has to be replaced will be synthesized. This shows that product forms can
+
by y z. This means that the output current z has to be also be realized:
mirrored and fed back to the inputs receiving current y .
Next, we will develop a circuit realizing the absolute- 2 =fi-x+ y +2z = x +y+2fi
value function - 2 / x T+ y=+ 2f z i + j r . (20)
2 = Ix - yl. (18)
Again, we can express this function in terms of square
roots Implementation in subclass C is simple (see Fig. 5).

-
z=Ix-yI+z2=(x-y)2
x’ - 2 x y + y2 z 2 =

+ y2=4xy + z2
VI. CONCLUSION
In this paper it was shown that a generalized interpre-
tation of the TL principle leads quite naturally to an

=*
+x2+2xj
extension to MOS circuits. It was shown that two distinct
+ y)*-
-
+\J( x z2 classes of T L circuits exist, one suitable for bipolar and
the other for MOS implementation. The MOS-translinear
x +y +J(x+ y)2- 2 2 =x+ y +2fi circuit principle was derived and an initial classification of
simple MTL circuits was proposed. Some examples were
given of MTL circuits synthesizing nonlinear functions.
Future work will be aimed at developing systematic
design techniques for MTL circuits and investigating the
1102 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 26, NO. 8, AUGUST 1991
practical errors arising in MTL circuits due to the nonide-
alities of the MOS transistors.
ACKNOWLEDGMENT
Thanks are due to the reviewers for suggestions to
improve the paper.
REFERENCES
[1] B. Gilbert, “Translinear circuits: A proposed classification,” Elec-
tron. Lett., vol. 11, pp. 14-16, 1975; also “Errata,” ibid., p. 136.
[2] E. Seevinck, Analysis and Synthesis of Translinear Integrated Cir-
cuits. Amsterdam: Elsevier, 1988.
[3] E. Seevinck, “Synthesis of nonlinear circuits based on the translin-
ear principle,” in Proc. ISCAS, 1983, pp. 370-373.
[4] B. Gilbert, “A new wide-band amplifier technique,” IEEE J . Solid-
State Circuits, vol. SC-3, pp. 353-365, 1968.
[5] B. Gilbert, “A precise four-quadrant multiplier with subnanosec-
ond response,” IEEE J . Solid-State Circuits, vol. SC-3, pp. 365-373,
1968.
[6] E. Seevinck and G. H. Renkema, “A 4-quadrant cosine-synthesis
circuit,” in ISSCC Dig. Tech. Papers, 1982, pp. 40-41.
[7] R. F. Wassenaar, E. Seevinck, M. G. van Leeuwen, C. Speelman,
and E. Holle, “New techniques for high-frequency rms-to-dc con-
version based on a multifunctional V-to4 converter,” IEEE J .
Solid-state Circuits, vol. 23, pp. 802-815, 1988.
[8] E. Seevinck, W. de Jager, and P. Buitendijk, “A low-distortion
output stage with improved stability for monolithic power ampli-
fiers,” IEEE J . Solid-State Circuits, vol. 23, pp. 794-801, 1988.
[9] E. Vittoz and J. Fellrath, “CMOS analog integrated circuits based
on weak inversion operation,” IEEE J . Solid-state Circuits, vol.
SC-12, pp. 224-231, 1977.
[lo] E. Seevinck, “Analysis and synthesis of translinear integrated cir-
cuits,” D.Sc. dissertation, Univ. of Pretoria, Pretoria, S. Africa, May
1981.
[11] J. A. de Lima, “Design of a micropower CMOS four-quadrant
multiplier based on the translinear principle,” in Proc. ESSCIRC,
1989, pp. 260-263.
[12] E. Seevinck, “Design and application of integrated analog interface
circuits,” in Proc. ISCAS, 1988, pp. 1923-1926.
[13] B. Gilbert, “Current-mode circuits from a translinear viewpoint: A
tutorial,” in Analogue IC Design: The Current-Mode Approach, C.
Toumazou, F. J. Lidgey, and D. G. Haigh, Eds. London: Peter
Peregrinus, 1990, ch. 2.
1141 J. M. Pelgrom, A. C. J. Duinmaijer, and A. P. G. Welbers, “Match-
ing properties of MOS transistors,” IEEE J . Solid-State Circuits,
vol. 24, pp. 1433-1440, 1989.
[15] E. A. M. Klumperink and E. Seevinck, “MOS current gain cells
with electronically variable gain and constant bandwidth,” IEEE J .
Solid-State Circuits, vol. 24, pp. 1465-1467, 1989.
[16] E. Seevinck, R. F. Wassenaar, and W. de Jager, “Universal adap-
tive biasing principle for micropower amplifiers,” in Proc. ESS-
CIRC, 1984, pp. 59-62.
[I71 K. Bult and H. Wallinga, “ A class of analog CMOS circuits based
on the square-law characteristic of an MOS transistor in saturation,”
IEEE J . Solid-State Circuits, vol. SC-22, pp. 357-365, 1987.
Evert Seevinck (M’75-SM’85) was born in Doet-
inchem, The Netherlands, on April 15, 1945. He
was educated in South Africa, receiving the
BSc. degree in mathematics and physics in 1966,
the B.Sc. degree in electrical engineering in
1970, the B.Sc. Hons. degree in electronic engi-
neering (cum laude) in 1975, and the D.Sc.
degree in electronic engineering in 1981, all
from the University of Pretoria, South Africa.
From 1970 to 1972 he was with Philips Gloeil-
amuenfabrieken in Niimeeen and Eindhoven.
~I
The Netherlands, where he worked on the design and application of
analog integrated circuits. In 1973 he returned to South Africa, where
he joined Philips in Johannesburg, continuing IC application work.
From 1975 to 1981 he was employed at the Council for Scientific and
Industrial Research (CSIR) in Pretoria, where he performed research
and development on novel circuit techniques and custom IC’s. In 1981
he remigrated to the Netherlands, returning to Philips and working on
analog IC design. In August 1983 he became Professor of Electrical
Engineering at the University of Twente, Enschede, The Netherlands.
In October 1985 he returned to Philips Research Laboratories, Eind-
hoven, The Netherlands, where he is now performing circuit research.
He has published on analog and digital circuit techniques and he holds
several patents in this field. Recently, his doctoral dissertation was
published in revised form as a book: Analysis and Synthesis of Translin-
ear Integrated Circuits (Elsevier Science Publishers, 1988).
Remco J. Wiegerink was born in Enschede, The
Netherlands, on September 17, 1964. He re-
ceived the M.S. degree in electrical engineering
from Twente University, Enschede, The Nether-
lands, in 1988 on the subject of an offset can-
celling circuit. He is now working towards the
Ph.Drdegree on the subject of MOS translinear
circuits.