KWAME NKRUMAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

(KNUST), KUMASI

COLLEGE OF SCIENCE

FACULTY OF COMPUTATIONAL AND PHYSICAL SCIENCES

DEPARTMENT OF PHYSICS

EXPERIMENT TITLE: EXPERIMENT TO DETERMINE THE VOLTAGE-

CURRENT (V-I) CHARACTERISTICS OF A ZENER DIODE

EXPERINMENT NUMBER: 27

ABENOR-EFUNAM DZIEDZORM 4652518

AGBOZO MARCELLIN EKUE 4652718

AGBOVE OPPONG HENRY 4652618

GROUP TWO (2)

DATE:24/10/2019
1
ABSTRACT
This research was piloted to deliberately examine the current-voltage features of a Zener diode.
The Zener diode is on purpose planned to be worked at voltages beyond the breakdown voltage
which is determined by the resistivity of the diode. The diode was joined to the power supply
in tallying to a multi-meter which resolute the diode voltage and the diode current as Vd and Id
in that order. The voltage from the power supply was amplified in a range of 0V to 18V and
the voltages crosswise the diode with its individual diode current were stately and noted. This
was finished for the forward bias. For the reverse bias, the above dealings were continual for
altered values from the power supply voltage to govern the diode voltage Vd and the
corresponding diode current Id. The breakdown voltage attained from the experiment was
establish to 10 ± 0.01 v The extreme current that possibly will pass through the diode was 1mA.
The power size was also originating to be 0.01W. From the effects gotten in the experiment, it
was assumed that, over a given era of phase, if the current movement had surpassed the
maximum current being 1mA, the diode would have been broken due to temperature increase
consequently disturbing the experiment.

2
Table of Contents
ABSTRACT............................................................................................................................................ 2
INTRODUCTION .................................................................................................................................. 4
THEORY ................................................................................................................................................ 6
METHODOLOGY ................................................................................................................................. 7
DIAGRAM OF SET-UP. ........................................................................................................................ 8
OBSERVATIONAL TABLE ................................................................................................................. 9
CALCULATIONS AND GRAPH ........................................................................................................ 10
ERROR ANALYSIS ............................................................................................................................ 12
RESULTS AND DISCUSSION ........................................................................................................... 13
CONCLUSION ..................................................................................................................................... 14
PRECAUTIONS ................................................................................................................................... 15
REFERENCES ..................................................................................................................................... 16

3
INTRODUCTION
A Zener diode is considered to function in reverse breakdown area. Zener diode is used for
voltage directive tenacity. Zener diodes are planned for precise reverse breakdown voltage
called Zener breakdown voltage (vz ). The value of vz be contingent on quantity of doping.
Breakdown current is restricted through power of indulgence capability of the Zener diode. If
power capability of Zener diode is 1W and Zener voltage is 10V, maximum reverse current is
0.1A or 100 MA. If current rises more than this limit, diode will be destroyed. Forward
characteristics of the Zener diode is comparable to usual PN junction diode. When forward
biased voltage is applied to the Zener diode it allows large amount of electric current and blocks
only a small amount of electric of electric current. [3]
Zener diode is heavily doped than the normal P-N junction diode. Hence it has very thin
depletion region, therefore Zener diode allow more electric current than the normal P-N
junction diodes.
Zener diode allows electric current in forward direction like a normal diode but also allows
electric current in the reverse direction if the applied reverse voltage is greater than the Zener
voltage. Zener diode is always connected in reverse direction because it is specifically designed
to work in reverse direction. [3]
A Zener diode is a p-n junction semiconductor device aimed to function in the reverse
breakdown area. The breakdown voltage of a Zener diode is wisely set by regulating the doping
level during production.
The term Zener diode was named after the American physicist Clarance Melvin Zener who
revealed the Zener effect. Zener diodes are the elementary structure chunks of electronic
circuits. They are broadly used in all types of electronic equipments. Zener diodes are primarily
used to shield electronic circuits from over voltage. [3]
The breakdown voltage of a Zener diode can be set by regulating the doping level. For Zener
diodes, silicon is desired to Ge because of its great temperature and current competence.
Semi-conductor expedients are devices that feat the possessions of semi-conductors [2]. They
feat the possessions of semi-conductors because their basis and temperament is halted from
semi-conductors like Silicon, Germanium and Gallium Arsenide. The two types of semi-
conductors are the P-type and the N-Type semi-conductor. The P-type taking holes as its
mainstream charge carriers and acting like protons whereas the N-type taking electrons as its
mainstream carriers
Semi-conductors are categorized as either intrinsic or extrinsic. Semi-conductors in their
wholesome custom are intrinsic semiconductors. In this state, their electrical possessions are
very restricted in that their charge carriers are thermally produced and very rare in number
which means very low current. Doping is the procedure of toting impurities to a semi-conductor
[2]. Doping a semi-conductor improves its electrical possessions and that makes the semi-
conductor extrinsic [2]. For this motive, extrinsic semi-conductors are used for devices that
need a substantial volume of current to function.
For this research, an extrinsic semi-conductor was used due to its well electrical conductivity
over intrinsic semi-conductors. There are countless published accounts where the I-V
characteristics of semi-conductor diodes.i.e P-N diodes were tested beneath situations such as

4
temperature, volume of doping, the choice of semi-conductor diodes and the resistivity
element. One of such news is by [1] who stated on the I-V characteristics under temperature
conditions. This experiment centres on the purpose of the I-V characteristics of a Zener diode
at usual temperature. The results from this article should widen the information on the
performance of Zener diodes and to discover possible methods of increasing its effectiveness
in electronic devices established on the I-V characteristics as said previous.

5
THEORY
A diode is a semi-conductor means that permit current to run over in one route [1]. The diode
has two workstations i.e. cathode being the negative also anode being the positive terminal. At
the cathode, the N-type substantial of the semiconductor is placed and P-type material is
positioned at the Anode. The region where the P-type come across the N-type is the P-N
junction. The widely held charge carriers in the P-type is Holes as well as for the N-type is
electrons. Some voltage basis delivers a continuous movement of electrons which float through
the N-type. Holes in the P-type also drift just before the junction. The holes and electrons chain
at the junction and give the idea to revoke each other. Over time, the majority charge carriers
in both the P material and the N material becomes worn-out close the junction. This zone of
weakening is termed the depletion section. It ranges only a short space of about 1µm on either
side of the junction [1]. Current stream happens if the external voltage provided to the diode is
superior than the barrier voltage because a potential variance would be made. The current
movement rises speedily and the voltage drops. This voltage drop is equivalent to the barrier
voltage [1].

A great reverse-biased voltage useful to a diode forms a great reverse-current. Collapse voltage
is the dawn voltage for which when surpassed, current stream quickly grows. This reasons
harm to the diode due to temperature growth. When an adequately big reverse-bias is useful
across a p-n junction diode, the subsequent electric field at the junction communicates a very
big force on a sure electron, ample to remove it after its covalent bond. Accordingly, the reverse
current converts very large. This sort of marvels is known as Zener breakdown. The breaking
of the covalent bonds yields a huge amount of EHP (Electron–Hole Pairs). Zener diodes are
aimed to activate in the breakdown state. The skill of a Zener diode is to scatter power, cuts as
the temperature rises [1]. This sorts the diode more well-organized to use for extended period.

6
METHODOLOGY
Connect the power supply, voltmeter, current meter with the diode as shown in fig4.1 for
reverse bias. You can use two multimeter (one to current through diode and the other to
measure voltage across diode).
Increase voltage from the power supply from 0V to 20v in step as shown in table5.1.
Measure voltage across diode and current through diode. Note down readings in the
observation table.
Reverse DC power supply polarity for forward bias.
Repeat the above procedure for different values of supply voltage for reverse bias.

7
DIAGRAM OF SET-UP.

Fig.5.1.

Fig.5.2. A circuit diagram for Reverse and Forward Bias

8
 OBSERVATIONAL TABLE
TABLE 6.1. Values for Forward bias.
SERIAL SUPPLY DIODE VOLTAGE Vd DIODE CURRENT(Id/mA)
NUMBER VOLTAGE/Vs

1 0.0 0.01 0.000

2 0.2 0.22 0.000
3 0.4 0.38 0.000
4 0.6 0.60 0.022
5 0.8 0.67 0.170
6 1.0 0.69 0.325
7 5.0 0.76 1.000

8 10.0 0.78 1.000

9 15.0 0.80 1.000

TABLE 6.2. Values for Reverse bias.

SERIAL SUPPLY DIODE VOLTAGE Vd DIODE CURRENT(Ic/mA)
NUMBER VOLTAGE/Vs

1 0 -0.10 -0.000
2 1 -1.00 -0.001
3 2 -2.03 -0.002
4 5 -4.97 -0.005
5 8 -8.00 -0.008
6 10 -9.98 -0.010
7 12 -11.50 -0.386

8 15 -11.64 -1.000
9 18 -11.74 -1.000

9
CALCULATIONS AND GRAPH
Table 7.1. Table of plotted values

DIODE VOLTAGE (V/v) DIODE CURRENT(I/mA)

-11.64 -1
-11.74 -1
-11.5 -0.386
-9.98 -0.01
-8 -0.008
-4.97 -0.005
-2.03 -0.002
-1 -0.001
-0.1 0
0.01 0
0.22 0
0.38 0
0.6 0.022
0.67 0.17
0.69 0.325
0.76 1
0.78 1
0.8 1

Fig 7.1. Graph of Zener Current against Zener Voltage.

10
CALCULATIONS
Given that series resistance (1) is 1K, load resistance (2) is 2K and voltage source varies from
10V to 30V. And voltage is 5V, then;
Maximum voltage after Zener breakdown = 30V – 5V
= 25V.
Also
Minimum voltage after Zener breakdown = 10V – 5V
= 5V.
From voltage = I x RT;
RT = R2 + R2
= 1K + 2K
= 3K

Thus, minimum current Imin = V/ RT

5
= 3000

= 1.666mA
Maximum current Imax = V/ RT
25
= 3000

= 8.33mA
from the experiment, Zener breakdown is 10V and maximum current reached was 1mA
therefore, power capacity of the diode = current x voltage
= 1x10-3 x 10
= 0.01W

11
ERROR ANALYSIS
The error presented in the experiment was outflows in current.
The voltage source could not outdo 20V.
The diode current had uncertainties of ±0.01A.

12
RESULTS AND DISCUSSION
From the research, table 6.1. and 6.2. displays values for the voltage across the diode and the current
through the diode with their separate voltages supply. The figures namely Fig.1.2 and 1.3 signifies the
formats for the forward and reverse bias networks correspondingly. Values in table 6.1. and 6.2.
signifies the features of the Zener diode in the forward bias and the reverse bias respectively with
their current being noted in mA. A graph of these values were plotted with the forward bias being in
the first quarter and the reverse bias being in the third quarter as shown in Graph 7.1. As seen in the
above graph, the figure is non-linear obviously viewing that the relationship concerning current and
voltage in a diode is at no time fixed. Talk about the graph, for forward bias, the curve stays continuous
with rising voltage for the first start. This specifies that although voltage was existing in the diode,
there was no current drift and this is apparent from the first three values of diode current in table 6.1.
For a moment, the curve starts to rise up at a voltage reading of 0.60V. The first current reading
throughout this rise was 0.022mA indicating that the barrier voltage was just surpassed. After 0.6V
the graph rises sharply which means current flow rises rapidly for the lasting voltage values. For the
reverse bias, the current values start to increase in low magnitude with increasing reverse voltage
values.

13
CONCLUSION

Commencing the graph in each biasing case, it can be understood that at some opinions of voltage
value, the current value remains constant at 1mA representing that maximum current has been
touched. From this opinion, it can be assumed that there is the possibility for the diode to be broken
if current keeps flowing through it for much extensive time. This is due to the fact that there would be
a temperature rise in Zener diodes. Decreases the power dissipating capability of the diode. The sharp
bending happening at 10V for the reverse bias indicate that breakdown voltage has been touched. It
can be established that the breakdown voltage for the Zener diode used in this research is 10V. Zener
diodes that have a breakdown voltage of 5 V or more have a positive Zener voltage temperature
coefficient, which means that the breakdown voltage rises as the temperature rises [1]. Also, Zener
diodes that have a breakdown voltage of less than 4 V have a negative Zener voltage-temperature
coefficient, which means that the breakdown voltage reduces with a rise in temperature [1]. From
calculations, the power capacity of the Zener diode used in this research was 0.01W. To recompense
for the temperature effect, it is suggested that the Zener diode should be connected in series with a
PN junction diode, with the PN junction diode forward biased and the Zener diode reverse biased.
Using the features of the Zener diode attained above, a Zener regulator circuit can be drawn to find a
regulated DC voltage of 6.8V as shown in Fig.6.1 If the voltage input was an AC, the output waveform
of the circuit.

14
PRECAUTIONS

1. The terminal networks of the set-up were done accurately to avoid in valid values.

2. Both of the multi-meters were moved to their respective corresponding measurements to obtain
accurate values.

3. Power supply was switched off when not in use to avoid conceivable damages to devices.

15
REFERENCES

[1] Wright, D.A. Department of Applied Physics. Cambridge: The University of Durham,
1997.
[2] Gates, Earl. D. (2011) Introduction to Electronics Fifth Edition. Delmar: Clifton Park, NY
12065
[3] Şen, M., Çalık, A.E. and Ertik, H., 2014. Determination of half-value thickness Instruments
and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 335,
pp.78-84.

16