Академический Документы
Профессиональный Документы
Культура Документы
INTRODUCTION TO
POWER ELECTRONICS
SYSTEMS
1
Definition of Power Electronics
DEFINITION:
To convert, i.e to process and control the flow of
electric power by supplying voltage s and currents in a
form that is optimally suited for user loads.
POWER POWER
INPUT OUTPUT
vi , ii Power vo , io
Processor
Source Load
Control
signal
measurement
Controller
reference
• Building Blocks:
– Input Power, Output Power
– Power Processor
– Controller
2
Power Electronics (PE) Systems
• To convert electrical energy from one form to
another, i.e. from the source to load with:
– highest efficiency,
– highest availability
– highest reliability
– lowest cost,
– smallest size
– least weight.
• Static applications
– involves non-rotating or moving mechanical
components.
– Examples:
• DC Power supply, Un-interruptible power
supply, Power generation and transmission
(HVDC), Electroplating, Electronic Welding,
Heating, Lighting, Cooling, Electronic ballast,
PV and Fuel Cell Conversion, VAR and
Harmonic Compensation
• Drive applications
– intimately contains moving or rotating
components such as motors.
– Examples:
• Electric trains, Electric vehicles, Air-
conditioning System, Pumps, Compressor,
Conveyer Belt (Factory automation).
3
PE - Scope and Applications
4
Application examples
AC voltage DC-DC
DIODE FILTER LOAD
RECTIFIER CONVERTER
AC LINE
VOLTAGE Vcontrol
(1 or 3 )
(derived from
feedback circuit)
Desired
temperature Indoor temperature
System and humidity Indoor
Controller sensors
Desired
humidity
5
WHY POWER ELECTRONIC IS
SO IMPORTANT TODAY?
• Electrical power conversion and control at
high frequency
• Apparatus at low cost,small size, high
reliability and long life
• Very important element in modern electrical
power processing and industrial process
control
• Fast growth in global energy consumption
• Environmental and safety problems by fossil
and nuclear power plants
• Increasing emphasis of energy saving and
pollution control by PE
• Growth of environmentally clean sources of
power that are PE intensive(Wind, PV and
Fuel Cell)
6
PE vs Linear Electronic
eg. DC Power Supply
7
PE vs Linear Electronics
eg. DC Power Supply
• Transistor as a switch
• High Efficiency
• High-Frequency Transformer
8
Power Conversion concept:
example
Vs (Volt)
• Supply from TNB:
50Hz, 240V RMS
(340V peak). 340 V
Customer need DC
voltage for welding time
purpose, say.
• TNB sine-wave
supply gives zero DC
component!
+ +
Vs Vo
• We can use simple _ _
half-wave rectifier. A
fixed DC voltage is
now obtained. This is
a simple PE system.
Vo
9
Conversion Concept
How if customer wants variable DC voltage?
More complex circuit using SCR is required.
vs
ig
G t
ia
A K vo
+ +
vs vo 2
_ _
t
ig
1 Vm
Vo Vm sin t d t 1 cos
2 2
By controlling the firing angle, ,the output DC
voltage (after conversion) can be varied..
AC input DC output
DC to DC: CHOPPER
DC input DC output
DC to AC: INVERTER
DC input AC output
11
Current issues
1. Energy scenario
• Need to reduce dependence on fossil fuel
– coal, natural gas, oil, and nuclear power resource
Depletion of these sources is expected.
12
2. Environment issues
• Nuclear safety.
– Nuclear plants remain radioactive for
thousands of years.
13
PE Application - BIPV
14
PE Application-Electric
vehicles
15
PE – wind energy
16
PE growth
• PE is an interdisciplinary field:
– Digital/analogue electronics
– Power and energy
– Microelectronics
– Control system
– Computer, simulation and software
– Solid-state physics and devices
– Packaging
– Heat transfer
17
Interdisciplinary Nature of
Power Electronics
18
Power semiconductor devices
(Power switches)
• Power switches:
work-horses of PE
systems.
POWER SWITCH
Vswitch= Vin
Vin
• Power switch never
operates in linear
mode. SWITCH OFF (fully opened)
• Power Diodes
– Stud type
– “Hockey-puck”
type
• IGBT
– Module type:
Full bridge and
three phase
• IGCT
– Integrated with
its driver
20
Photo of Power Switches
SITH
THYRISTORS
21
Power Diode
Id
A (Anode)
+
Id Vd
_ Vr
Vf Vd
K (Cathode)
22
Reverse Recovery
IF
trr= ( t2 - t0 )
dif/dt
t2
t0
VR
IRM
VRM
23
Softness factor, Sr
Snap-off
t0
VR
t1 t2
Soft-recovery
IF Sr= ( t2 - t1 )/(t1 - t0)
= 0.8
t1 t2
t0
VR
24
Types of Power Diodes
• Fast recovery
– Very low trr (<1us).
– Power levels at several hundred volts and
several hundred amps
– Normally used in high frequency circuits
• Schottky
– Very low forward voltage drop (typical 0.3V)
– Limited blocking voltage (50-100V)
– Used in low voltage, high current application
such as switched mode power supplies.
25
THYRISTOR
26
Thyristor (SCR)
Ia
A (Anode)
Ia
+ Ig>0
Vak Ig=0
Ig Ih IL
_ Vr
Ibo
G (Gate)
Vbo Vak
K (Cathode)
27
Thyristor Conduction
ig
vs
ia
+ t
+
vs vo
_ _ vo
t
ig
t
28
Types of thyristors
• Phase controlled
– rectifying line frequency voltage and current
for ac and dc motor drives
– large voltage (up to 7kV) and current (up to
4kA) capability
– low on-state voltage drop (1.5 to 3V)
• Inverter grade
– used in inverter and chopper
– Quite fast. Can be turned-on using “force-
commutation” method.
• Light-activated
– Similar to phase controlled, but triggered by
pulse of light guided by optical fibre.
– Normally very high power ratings (HVDC)
• TRIAC
– Dual polarity thyristors
29
Controllable switches
(power transistors)
30
Bipolar Junction Transistor (BJT)
C (collector)
IC
IC
B (base) +
VCE IB
_
IB
31
BJT Darlington pair
C (collector)
Driver IC1
Transistor IC Output
Transistor
B (base)
IC2
1
+
IB1 2 VCE
_
IB2 ic= ib
Biasing/ E (emitter)
stabilising
network
I c I B1 I c1 I c 2 I B1
I c1 Ic2
I B1 I B1
Ic2 I B2 I I
1 1 2 B1 c1
I B 2 I B1 I B1
1 2 1 1
1 2 1 2
32
Metal Oxide Silicon Field Effect
Transistor (MOSFET)
D (drain)
ID
ID
+
G (gate) VGS
+
_
VDS
+ _
VGS
_
VDS
S (source)
• Available in 1970
• Ratings: Voltage VDS<500V, current IDS<300A.
Frequency f >100KHz. For some low power
devices (few hundred watts) may go up to MHz
range.
33
MOSFET characteristics
• Basically low voltage device. High voltage device
are available up to 600V but with limited current.
Can be paralleled quite easily for higher current
capability.
34
Insulated Gate Bipolar
Transistor (IGBT)
C (collector)
IC
IC
G (gate) +
VCE VGE
_
+
VGE _
E (emitter)
VCE (sat) VCE
IGBT: symbol v-i characteristics
35
Gate turn-off thyristor (GTO)
Ia
A (Anode)
Ia
+ Ig>0 Ig=0
Vak Ih
_ Vr
Ibo
G (Gate)
I
Vak
g Vbo
K (Cathode)
36
Insulated Gate-Commutated
Thyristor (IGCT)
A (Anode)
Ia
+
Vak IGCT
_
I
g
K (Cathode)
IGCT: Symbol
37
MOS-CONTROLLED
THYRISTOR (MCT)
anode anode
i
A
+
gat e
gate v
OFF-FET ON-FET AK
cathode cathode
1GW
Thyristor
10MW
10MW GTO/IGCT
1MW
100kW IGBT
10kW
MOSFET
1kW
100W
39
(Base/gate) Driver circuit
40
Amplification: Example:
MOSFET gate driver
+VGG
From control
circuit +
R1
Rg D
G
VDC
Q1 + S
VGS
LM311 _
_
41
Isolation
R1 ig +
vak
-
Pulse source
R2 iak
From control
circuit D1 Q1 A1 To driver
42
Switches comparisons (2003)
43
Application examples
• For each of the following application, choose the
best power switches and reason out why.
44
Power switch losses
• Why it is important to consider losses of power
switches?
– to ensure that the system operates reliably under
prescribed ambient conditions
– so that heat removal mechanism (e.g. heat
sink, radiators, coolant) can be specified. losses
in switches affects the system efficiency
• Main losses:
– forward conduction losses,
– blocking state losses
– switching losses
– Gate drive losses
45
Heat Removal Mechanism
46
Forward conduction loss
+Von
Ideal switch:
– Zero voltage drop across it during turn-on (Von).
– Although the forward current ( Ion ) may be
large, the losses on the switch is zero.
• Real switch:
– Exhibits forward conduction voltage (between
1-3V, depending on type of switch) during turn
on.
– Losses (on state) is measured by product of
volt-drop across the device Von with the current,
Ion, averaged over the period.
47
Blocking state loss
48
Switching loss
v P=vi i
v
i
Energy
time time
• Ideal switch:
– During turn-on and turn off, ideal switch requires zero
transition time. Voltage and current are switched
instantaneously.
– Power loss due to switching is zero
• Real switch:
– During switching transition, the voltage requires time to fall
and the current requires time to rise.
– The switching losses is the product of device voltage
and current during transition. For inductive load, the
switch loss can be given as
PL = 0.5VsIL(tr+tf)fs
where fs is switching frequency,IL = load current, tf & tr = rise and
fall time of load current
• Major loss at high frequency operation
49
Switching Characteristics
(linearised)
50
An example of heat sink
design
Say that a MOSFET is mounted on
heat sink. So what is the correct
heat sink size (ie Rhs-a)?
51
An example of heat sink
design
Say that two diodes are mounted on
the same heat sink. So what is the
correct heat sink size (ie Rhs-a)?
Tj Tins
D1 D2
Tc Ths
Ta
Rth Rhs a
2(Rj c Rc hs)
52
Snubbers
+VL Vce
Ls
i
+ +
Vin Vce
Vce rated
time
di
vin vs vce Ls vce
dt
di
vce vin Ls
dt
since di dt is negative (turning off)
di
vce vin Ls
dt
53
RCD Snubbers
• The voltage across the switch is bigger than the
supply (for a short moment). This is spike.
Vce
Ls
R+
D
Vce
Vce rated
C
time
54
Snubbers
55
Safe Operating Area(SOA) -
BJT
log( i C ) switching trajectory of diode-
clamped inductive load circuit
I
CM
-5
10 sec
T j,max
-4
10 sec
2nd -3
2nd 10 sec
breakdown
breakdown
dc
BV log ( v )
CEO CE
56
Safe Operating Area(SOA) -
MOSFET
log ( )i
D
I
DM
-5
10 sec
10 -4sec
T j,max
-3
10 sec
DC
BV
DSS
log ( v)
DS
57
Ideal vs. Practical power switch
58