EE Department Power Electronics

National University of Science and Technology

Department of Electrical Engineering

POWER ELECTRONICS
LABORATORY MANUAL

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LIST OF EXPERIMENTS

Lab01 Design of Air Core Inductor CLO1

Lab02 Switching Characteristics of Power Diodes CLO1

Lab03 Implement Gate Drive Circuit using BJT's CLO1

Lab04 Study Switching Characteristics of MOSFET's CLO1

Lab05 Study Switching Characteristics of Thyristor CLO1

Lab06 Half wave and Full wave Controlled rectifier CLO2

using SCR

Lab07 Generation of Pulse Train/PWM using opamps CLO2

and generation of Triangular/Sawtooth Wave
from Square wave using opamp.

Lab08 Generate PWM Signal Using 555 Timer IC CLO2

Lab09 Insulated Gate Bipolar transistor (IGBT) CLO1

characteristics

Lab10 Buck Converter with Gate Drive Circuit CLO3

Lab11 Boost Converter with Gate Drive Circuit CLO3

Lab12 Buck/Boost Converter with Gate Drive Circuit CLO3

Lab13 Design of an H-bridge. CLO3

Lab14 Design Project CLO4

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Standard Equipments and Components;

Equipments Required:

Instruments:
1. Function Generator
2. Digital Multimeter
3. Power Supply
4. Oscilloscope

Components:

Resistors Capacitors Inductors Diodes IC SCR, Transistor

IGBT

Fixed 1000 uf, 2 mH, 1N4007(4) LM741 BT136 2N3904(2)

Resistors: 220 uf, 2N3906(2)
10 kΩ (2), LM 353 BT151
100 uf (2), 50 mH TIP142
1kΩ (2),
100 Ω, 10 uf, 1 uf, 555 IRGB60K TIP 147
10 Ω, 0.1 uf, Timer
20 kΩ, 0.01uf IR2104
100 Ω ,
10 Ω/10w,
150Ω/20w.
Variable
Resistors:
2K Ω,
5K Ω,
1M Ω).

Software:

1) Proteus
2) PSPICE

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Experiment # 2 Switching Characteristics of Power Diodes

Power Diodes take finite time to make transition from reverse bias to forward
bias condition (switch ON) and vice versa (switch OFF). Behavior of thediode current
and voltage during these switching periods are important due to the following reasons.

• Severe over voltage / over current may be caused by a diode switching at different
points in the circuit using the diode.

• Voltage and current exist simultaneously during switching operation of a diode.

Therefore, every switching of the diode is associated with some energy loss. At
high switching frequency this may contribute significantly to the overall power loss in the
diode.

Observed Turn ON behavior of a power Diode:

Diodes are often used in circuits with di/dt limiting inductors. The rate of rise of
the forward current through the diode during Turn ON has significant effect on the
forward voltage drop characteristics. A typical turn on transient is shown
in Fig.1

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It is observed that the forward diode voltage during turn ON may transiently reach a
significantly higher value Vfr compared to the steady slate voltage drop at the steady
current IF. In some power converter circuits (e.g voltage source inverter) where a free
wheeling diode is used across an asymmetrical blocking power switch (i.e GTO) this
transient over voltage may be high enough to destroy the main power switch.
Vfr (called forward recovery voltage) is given as a function of the forward di/dt in the
manufacturer’s data sheet. Typical values lie within the range of 10-30V. Forward
recovery time (tfr) is typically within 10 us.

Observed Turn OFF behavior of a Power Diode:

Fig. 2 shows a typical turn off behavior of a power diode assuming controlled rate of
decrease of the forward current.

Salient features of this characteristics are:

• The diode current does not stop at zero, instead it grows in the negative direction to Irr
called “peak reverse recovery current” which can be comparable to IF. In many power
electronic circuits (e.g. choppers, inverters) this reverse current flows through the main
power switch in addition to the load current. Therefore, this reverse recovery current has
to be accounted for while selecting the main switch.
• Voltage drop across the diode does not change appreciably from its steady state value
till the diode current reaches reverse recovery level. In many power electric circuits
(choppers, inverters) this may create an effective short circuit across the supply, current
being limited only by the stray wiring inductance. Also in high frequency switching
circuits (e.g, SMPS) if the time period t4 is comparable to switching cycle qualitative
modification to the circuit behavior is possible.
• Towards the end of the reverse recovery period if the reverse current falls too sharply,
(low value of S), stray circuit inductance may cause dangerous over voltage (Vrr) across
the device. It may be required to protect the diode using an RC snubber.

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Experiment # 3 Gate Drive Circuit

Objective: Design of a Gate drive circuit

Equipment: Names:1)________________________________

Instruments: 2)_______________________________
Oscilloscope
Function generator 3)_______________________________
DMM
DC power supply (2) Instructor:_______________________________
Breadboard
Date:______________________________

Components:
Resistors: 10kΩ (2), 1kΩ
Capacitor: 100 uF (2)
Transistors: NPN, PNP
Diodes: Si (2)
Theory:
When MOSFET is initially switched on, it draws large amount of current because
initially the capacitor (parasitic capacitance) acts as a short. This current can damage the
source. After the threshold is achieved for the MOSFET for turning on, the current
increases in proportion to the increasing voltage:

Therefore, we use Gate Drive Circuits which isolates load from signal source
without changing the frequency and provides current source and sink. A gate driver is
a power amplifier that accepts a low-power input from a signal source and produces a
high-current drive input for the gate of a high-power transistor such as a power MOSFET.
Circuit Diagram:

Procedure:
1) Make the Gate Drive Circuit as shown in the diagram.

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2) Set the DC power supplies at 10 and -10 volts.

3) Using the function generator, apply a pulse train input signal.
4) Connect the oscilloscope probe across the load and observe the output.
5) Vary the DC voltages on the power supplies and observe the effect across the
load on the output waveform
6) Sketch the input and output waveform

Input waveform

Output waveform

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ANSWER THE FOLLOWING QUESTIONS

1. Why is a gate drive circuit used?

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2. How does the parasitic capacitance effect the switching of a MOSFET?

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 Why MOSFET switch is designed in triode region?

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Experiment # 4 SWITCHING CHARACTERISTICS OF

MOSFETs

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Objective: Design of a Gate drive circuit

Equipment: Names: 1)________________________________

Instruments: 2)_______________________________
Oscilloscope
Function generator 3)_______________________________
DMM
DC power supply (2) Instructor:_______________________________
Breadboard
Date:______________________________

Components:
Resistors: 10kΩ (2), 1kΩ (2)
Capacitor: 100 uF (2)
Transistors: NPN, PNP, MOSFET
Diodes: Si (2)
Theory:
Because of the MOSFET’s construction, there exist parasitic capacitances. So turning a
MOSFET on or off means charging and discharging these capacitances. This results in
switching delays. The main capacitances that cause this delay are Cgs and Cgd.
When a transistor is switched on or off, it does not immediately switch from a non-
conducting to a conducting state; and may transiently support both a high voltage and
conduct a high current. Consequently, when gate current is applied to a transistor to cause
it to switch, a certain amount of heat is generated which can, in some cases, be enough to
destroy the transistor. The switching time of a transistor is inversely proportional to the
amount of current used to charge the gate. Therefore, switching currents are often
required in a higher range. To provide this sort of high current a gate driver circuit is
employed as discussed before.
When a voltage is applied to the gate, it charges the gate-to source capacitance. When the
voltage at the gate crosses the threshold voltage of the MOSFET, the drain-to-source
voltage begins to fall (the MOSFET begins to become enhanced). Subsequently, the gate-
to-drain capacitance requires more current due to the changing drain voltage, which it
takes from the available gate-drive current of the MOSFET drive circuit. This causes the
gate voltage to remain constant until the rain-to-source voltage falls to its minimum and
the device is fully on. Once fully charged, the voltage on the gate begins to rise again
until it reaches its peak value. As the input voltage polarity is reversed the parasitic
capacitances begin to discharge and the discharging curve is seen.

Following are the switching characteristics of MOSFETs:

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Circuit Diagram:

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Procedure:
 Connect the previously constructed gate driver circuit and MOSFET as shown in
the circuit diagram

 Set the DC power supplies at 10 and -10 volts.

 Using the function generator, apply a pulse train input signal.

 Connect the oscilloscope probe at the gate and observe the Input and output
waveform

Input waveform

Output waveform

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ANSWER THE FOLLOWING QUESTIONS

 Why switching is fast in MOSFETs as compared to BJTs?

 Discuss the parasitic capacitances and their effects.

Experiment # 5 CHARACTERISITCS OF AN SCR

THYRISTOR
Names: 1)________________________________
Objective: 2)_______________________________

3)_______________________________
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Instructor:_______________________________

Date:______________________________
EE Department Power Electronics

Equipment:

Instruments:
Oscilloscope
DMM
DC power supply
Breadboard

Components:
Resistors: 1kΩ (2)
Thyristor: BT136 (Triac)

Theory:
Thyristors are three-legged semiconductor switching devices which come in the “Semi-
controlled” category. In off state Thyristor only allows a tiny leakage current. In on state,
the output current depends on anode to cathode voltage. However, the Thyristor is turned
on if two conditions are fulfilled:
1. Forward biasing of the junction

2. Pulse on the gate pin

To go from on state to off state, the junction needs to be reverse biased. Until it gets
reverse biased, the thyristor will remain on.
Circuit Diagram:

Procedure:
 Set three different values of Gate voltage (and current).
 Observe the behavior of the Thyristor over a range of Anode to Cathode voltages.
 Note the threshold voltage and observe its relation with the gate current.

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Input waveform

Output waveform

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ANSWER THE FOLLOWING QUESTIONS

3. Why is a gate drive circuit used?

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4. How does the parasitic capacitance effect the switching of a MOSFET?

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 Why MOSFET switch is designed in triode region?

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Experiment # 6 IGBT characteristics

Equipment:
 IGBT
 100 ohm 10W resistor
 1k ohm resistor
 2 x DC power Supply
 2 x Digital Multimeters

1. An Insulated Gate
Bipolar Transistor is a
Power transistor having
benefits of both MOSFETs and BJTs. This device is commonly used in
industries because of its high power ratings and minimal losses. In this
experiment you would be assessing the characteristics of an IGBT.
Construct the circuit shown and follow the steps given below.

2. Set the collector voltage to 15v and measure the voltage and current when
the IGBT starts conducting (i.e currents starts to flow from collector to
emitter).

VGE = _______________________ IG = _______________________

3. We have to find the I-V characteristics of IGBT. Fill the table below

VGE Vc VCE VR1 IC= VR1 /R1

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8 0

8 1

8 2

8 3

8 4

8 5

8 6

8 7

8 8

8 9

8 10

4. Plot a graph of VCEvsIC .

Experiment # 7 HALF-WAVE RECTIFICATION WITH SCR USING

TRIGGER CIRCUIT & FULL-WAVE BRIDGE
Names: 1)________________________________
RECTIFICATION

Objective: 2)_______________________________

3)_______________________________
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Instructor:_______________________________

Date:______________________________
EE Department Power Electronics

Equipment:

Instruments:
Oscilloscope
Function generator
DMM
Breadboard

Components:
Resistors: 150 Ω/20w, 20 k Ω , Potentiometer 3K Ω
Capacitor: 100uf
SCR: BT 151
Diodes: Si (4)
Theory:
Thyristor triggering is turning it ON from its OFF state. It is turned ON by increasing the
current flowing through it. To go from on state to off state, the junction needs to be
reverse biased. Another way is to reduce the device current so that it gets lower than
holding current. If a sufficient positive potential is applied at the Gate Terminal with
respect to the cathode, the breakdown of the junction occurs. Once thyristor starts
conducting, the gate cannot turn OFF device and the thyristor continues to conduct. It
turns OFF only when the device voltage VAK is removed or the current through the device
is less than the holding current. Using a thyristor we can control the rectification. We
change the value of the potentiometer to change the charging time of the capacitor and
change the value of α.
Circuit Diagram:

Half wave Rectifier

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Full wave Rectifier

Procedure:
 Assemble the circuit according to the diagrams above.
 Apply the Input and observe the output.
 Observe the effect on the output by changing the value of potentiometer.

waveforms

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ANSWER THE FOLLOWING QUESTIONS

5. Why is a gate drive circuit used?

________________________________________________________________________
________________________________________________________________________
________________________________________________________________________
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Experiment # 8 PWM GENERATION

Objective:

Equipment: Names: 1)________________________________

Instruments: 2)_______________________________
Oscilloscope
DC Power Supply 3)_______________________________
DMM
Breadboard Instructor:_______________________________

Date:______________________________

Components:
Resistors: 150 Ω/20w, 1 k Ω (2) , Potentiometer 2 K Ω
Capacitor: 0.01 uf , 10 uf
IC: 555 Timer
Diodes: Si
Theory:
The 555 timer IC is used in a number of applications like timer, pulse generator,
oscillator etc. Its has three modes of operation.
1. Monostable
2. Astable
3. Bistable

Monostable Mode is great for creating time delays. In this mode an external trigger
causes the 555 timer to output a pulse of an adjustable duration. In the monostable mode,
the 555 timer acts as a "one-shot" pulse generator. The pulse begins when the 555 timer
receives a signal at the trigger input that falls below a third of the voltage supply. The
width of the output pulse is determined by the time constant of an RC network, which
consists of a capacitor (C) and a resistor (R). The output pulse ends when the voltage on
the capacitor equals 2/3 of the supply voltage.
Astable Mode outputs an oscillating pulse signal/waveform. In this mode the output of
the 555 timer is switching between high and low states at a tunable frequency and pulse
width. n astable mode, the 555 timer puts out a continuous stream of rectangular pulses
having a specified frequency. Resistor R1 is connected between VCC and the discharge pin
(pin 7) and another resistor (R2) is connected between the discharge pin (pin 7), and the
trigger (pin 2) and threshold (pin 6) pins that share a common node. Hence the capacitor
is charged through R1 and R2, and discharged only through R2, since pin 7 has low
impedance to ground during output low intervals of the cycle, therefore discharging the
capacitor.
Bistable Mode causes the 555 timer to toggle its output between high and low states
depending on the state of two inputs. In bistable mode, the 555 timer acts as a basic flip-
flop. The trigger and reset inputs (pins 2 and 4 respectively on a 555) are held high via
pull-up resistors while the threshold input (pin 6) is simply floating. Thus configured,
pulling the trigger momentarily to ground acts as a 'set' and transitions the output pin (pin
3) to Vcc (high state). Pulling the reset input to ground acts as a 'reset' and transitions the

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output pin to ground (low state). No timing capacitors are required in a bistable
configuration. Pin 5 (control voltage) is connected to ground via a small-value capacitor
(usually 0.01 to 0.1 uF); pin 7 (discharge) is left floating.
Below is the circuit diagram of Astable mode of operation of 555 timer IC. In this
configuration a PWM signal of variable duty cycle and frequency can be generated at the
output. By changing the values of RA , RB and C in the circuit below, the duty cycle and
frequency can be changed. This can be observed by the following equations.

TON=0.7×RA×C
TOFF=0.7×RB×C
T=TON+TOFF
f=1/T
Circuit Diagram:

Procedure:
 Assemble the circuit given in the diagram above.
 Use potentiometer instead of resistances.
 Generate PWM of different frequencies and duty cycle and verify with your calculations.

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ANSWER THE FOLLOWING QUESTIONS

 Discuss the applications of all 3 modes of operation of a 555 timer?

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Experiment # 9 Generation of Triangular Wave by using Op-

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Amp

Objective:

Equipment: Names: 1)________________________________

Instruments: 2)_______________________________
Oscilloscope
DC Power Supply (2) 3)_______________________________
Function generator
DMM Instructor:_______________________________
Breadboard
Date:______________________________

Components:
Resistors: 1 k Ω , 10 k Ω
Capacitor: 0.1 uf,
Transistors: NPN
Op-amp: LM741

Theory:
In this experiment we used Op-amp in the integrator configuration. The output is
according to the mathematical operation of integration over time. Which can be verified
as follows:

Here Iin=If
+ -
As V = V = 0 (Virtual ground at X)
Vin/R = C dVc/dt
Vin/R = C d(0-Vout)/dt
Vout=

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Procedure:
 Assemble the circuit according to the above diagram
 Give a bipolar square wave input from a function generator.
 As a result of integration of input a triangular wave with a constant increasing and
decreasing slope will be obtained.

Observe the effect of frequency of input signal and RC combination on the output

ANSWER THE FOLLOWING QUESTIONS

 Discuss the importance of triangular wave in terms of feedback generation.

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Experiment # 10 PWM GENERATION FROM TRIANGULAR

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WAVE USING OP-AMP

Objective:

Equipment: Names: 1)________________________________

Instruments: 2)_______________________________
Oscilloscope
Function generator 3)_______________________________
DC Power Supply (2)
DMM Instructor:_______________________________
Breadboard
Date:______________________________

Components:
Resistors: 150 Ω/20w, 1 k Ω , Potentiometer 3K Ω
Capacitor: 1 uf
Op-amp: LM 353

Theory:
THEORY:
In the last lab, triangular wave was generated using op-amp in integrator configuration. If
that triangular wave is compared with a fixed DC level we will get a pulse train at the
output. This is how Pulse Width Modulation is done using opamps. The figure below
explains how the pulses are generated. On varying the DC input level, the duty cycle of
the pulse train can be varied.

If instead of DC input we apply a sinusoidal

signal then the width of pulses obtained will
be non uniform. This can be seen from the
figure at right. Reason being the varying
amplitude of sine wave.
This principle of PWM generation is used for the

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feedback mechanism of DC-DC converters. Using this technique we can regulate the
output of DC-DC converters to a fixed level.
PROCEDURE:
 First assemble the circuit according to the diagram below.
 Check the output of first op-amp.
 If the triangular wave is generated, note down its peak value.
 Then at the non-inverting terminal of second op-amp, apply DC voltage of value
less than the peak.
 Now observe the effect of varying the DC level
 After this, apply a sine wave instead of DC.
 Now observe the outputput and observe the effect of varying frequency and
peak of sine wave.

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Experiment # 11 DESIGN A BUCK CONVERTER

CIRCUIT

Objective:

Equipment: Names: 1)________________________________

Instruments: 2)_______________________________
Oscilloscope
Function generator 3)_______________________________
DMM
Breadboard Instructor:_______________________________

Date:______________________________

Components:
Resistors: Potentiometer 1M Ω
Capacitor: 100uf
Inductor: 2 mH
Transistor: Power Mosfet
Diode: Si
Theory:
A Buck converter is a step-down DC-Dc converter. The average output voltage V O ranges
from 0 to input voltage VI. The basic circuit for Buck converter is given below.

Fig. Buck Converter

Any switching device can be used for a switch. Preferably a MOSFET is used with a gate
drive circuit for this purpose. The transfer function for a buck converter is.
VO =kVI
Here 'k' is the duty cycle. The ripples in the output can be controlled by the values of
Capacitor and Inductor.
ΔI = VIk(1-k)/fL
ΔVc = ΔI/8fC
In the above circuit the values for the capacitor and inductor are selected keeping in
mind the critical values. So as to keep the circuit in Continuous Conduction Mode
(CCM).
Lc=(1-k)R/2f
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Cc= (1-k)/16Lf2
Circuit Diagram:

ANSWER THE FOLLOWING QUESTIONS

 Discuss the process of output regulation.

 Discuss the effects of critical values of capacitance and inductance.
 Discuss various practical applications of BUCK converter.

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Experiment # 12 Design of A Boost Converter

Boost Converter
Equipment:
 TIP 142 (NPN)
 Diode
 1k ohm resistor
 Inductor 2mH
 Capacitor 220uF
 100 ohm Resistor
 DC power Supply
 Digital Multimeter
 Function Generator
Theory:
A boost convertor is a DC to DC
step up convertor. This circuit
works on the ability of inductor
and capacitor to store charge. It
is particularly useful when a known fixed load must be provided a voltage higher
than the power supply. In this experiment you would study the behavior of Boost
convertor. Please construct the circuit shown above and follow the steps below.

5. Provide a duty Cycle of 40% at the base of BJT. Calculate the theoretical
value of VR1(theoretical) = _______________________

6. Measure the output across R1 and calculate the percentage difference in

output.
VR1(measure) = ________________
Percentage difference = ___________________
7. Calculate the Vripple across R1 and then measure the ripple.
Vr (theoretical) = ____________________________________
Vr (measured) = ____________________________________

8. Explain the roles of the following components in the circuit.

Inductor :
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___________________________________________________________
___________________________________________________________
____________________
Capacitor:
___________________________________________________________
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___________________________________________________________

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___________________________________________________________
____________________
Transistor :
___________________________________________________________
___________________________________________________________
___________________________________________________________
___________________________________________________________
___________________
Diode:
___________________________________________________________
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___________________________________________________________
___________________________________________________________
____________________

9. A boost convertor’s output is dependent on the load. What improvement

would you suggest in this circuit that would make the output independent
of the value of load? Draw a circuit diagram of your design

Experiment # 13 Buck-Boost Converter

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Equipment:
 TIP 147 (PNP)
 Diode
 1k ohm resistor
 Inductor 50mH
 Capacitor 1000uF
 10 ohm Resistor
 DC power Supply
 Digital Multimeter
 Function Generator
Theory:
A buck-boost convertor is a
DC to DC convertor which
has the ability to step up or
step down the voltage from
a fixed DC supply. This
circuit works on the ability
of inductor and capacitor to store charge. In this experiment you would study the
behavior of Buck-Boost convertor. Please construct the circuit shown above and
follow the steps below.

10. Provide a duty Cycle of 70% at the base of BJT. Calculate the theoretical
value of VR1(theoretical) = _______________________

11. Measure the output across R1 and calculate the percentage difference in
output.
VR1(measure) = ________________
Percentage difference = ___________________
12. Provide a duty Cycle of 30% at the base of BJT. Calculate the theoretical
value of VR1(theoretical) = _______________________

13. Measure the output across R1 and calculate the percentage difference in
output.
VR1(measure) = ________________
Percentage difference = ___________________

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14. Calculate the Vripple across R1 and then measure the ripple.
Vr (theoretical) = ____________________________________
Vr (measured) = ____________________________________

15. Explain the roles of the following components in the circuit.

Inductor :
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___________________________________________________________
____________________
Capacitor:
___________________________________________________________
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___________________________________________________________
____________________
Transistor :
___________________________________________________________
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___________________________________________________________
___________________________________________________________
___________________
Diode:
___________________________________________________________
___________________________________________________________
___________________________________________________________
___________________________________________________________
____________________

16. A boost convertor’s output is dependent on the load. What improvement

would you suggest in this circuit that would make the output independent
of the value of load? Draw a circuit diagram of your design

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