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IPA60R199CP

CoolMOS® Power Transistor


Product Summary
Features
V DS @ Tj,max 650 V
• Lowest figure-of-merit R ONxQg
R DS(on),max@T j= 25°C 0.199 Ω
• Ultra low gate charge
Q g,typ 32 nC
• Extreme dv/dt rated

• High peak current capability


PG-TO220
• Qualified according to JEDEC1) for target applications

• Pb-free lead plating; RoHS compliant

CoolMOS CP is designed for:

• Hard switching SMPS topologies

Type Package Marking

IPA60R199CP PG-TO220 6R199P

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous drain current 2) ID T C=25 °C 16 A

T C=100 °C 10

Pulsed drain current3) I D,pulse T C=25 °C 51

Avalanche energy, single pulse E AS I D=6.6 A, V DD=50 V 436 mJ

Avalanche energy, repetitive t AR3),4) E AR I D=6.6 A, V DD=50 V 0.66

Avalanche current, repetitive t AR3),4) I AR 6.6 A

MOSFET dv /dt ruggedness dv /dt V DS=0...480 V 50 V/ns

Gate source voltage V GS static ±20 V

AC (f >1 Hz) ±30

Power dissipation P tot T C=25 °C 34 W

Operating and storage temperature T j, T stg -55 ... 150 °C

Mounting torque M2.5 screws 50 Ncm

Rev. 2.2 page 1 2011-12-20


Rev. 2.3 Page 1 2018-02-14
IPA60R199CP

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous diode forward current 2) IS 16 A


T C=25 °C
Diode pulse current 3) I S,pulse 51

Reverse diode dv /dt 5) dv /dt 15 V/ns

Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case R thJC - - 3.7 K/W

Thermal resistance, junction -


R thJA leaded - - 80
ambient

Soldering temperature, 1.6 mm (0.063 in.)


T sold - - 260 °C
wavesoldering only allowed at leads from case for 10 s

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 600 - - V

Gate threshold voltage V GS(th) V DS=V GS, I D=0.66 mA 2.5 3 3.5

V DS=600 V, V GS=0 V,
Zero gate voltage drain current I DSS - - 1 µA
T j=25 °C

V DS=600 V, V GS=0 V,
- 10 -
T j=150 °C

Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA

V GS=10 V, I D=9.9 A,
Drain-source on-state resistance R DS(on) - 0.18 0.199 Ω
T j=25 °C

V GS=10 V, I D=9.9 A,
- 0.49 -
T j=150 °C

Gate resistance RG f =1 MHz, open drain - 2 - Ω

Rev. 2.3 Page 2 2018-02-14


IPA60R199CP

Parameter Symbol Conditions Values Unit


min. typ. max.

Dynamic characteristics

Input capacitance C iss V GS=0 V, V DS=100 V, - 1520 - pF

Output capacitance C oss f =1 MHz - 72 -

Effective output capacitance, energy


C o(er) - 69 -
related6) V GS=0 V, V DS=0 V
Effective output capacitance, time to 480 V
C o(tr) - 180 -
related7)

Turn-on delay time t d(on) - 10 - ns

Rise time tr V DD=400 V, - 5 -


V GS=10 V, I D=9.9 A,
Turn-off delay time t d(off) R G=3.3 Ω - 50 -

Fall time tf - 5 -

Gate Charge Characteristics

Gate to source charge Q gs - 8 - nC

Gate to drain charge Q gd V DD=400 V, I D=9.9 A, - 11 -

Qg V GS=0 to 10 V
Gate charge total - 32 43

Gate plateau voltage V plateau - 5.0 - V

Reverse Diode

V GS=0 V, I F=9.9 A,
Diode forward voltage V SD - 0.9 1.2 V
T j=25 °C

Reverse recovery time t rr - 340 - ns


V R=400 V, I F=I S,
Reverse recovery charge Q rr - 5.5 - µC
di F/dt =100 A/µs
Peak reverse recovery current I rrm - 33 - A
1)
J-STD20 and JESD22
2)
Limited only by maximum temperature
3)
Pulse width t p limited by T j,max
4)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
5)
ISD≤ID, di/dt≤200A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
6)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
7)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.

Rev. 2.3 Page 3 2018-02-14


IPA60R199CP
1 Power dissipation 2 Safe operating area
P tot=f(T C) I D=f(V DS); T C=25 °C; D =0
parameter: t p

40 102
limited by on-state
resistance
1 µs

10 µs
30
100 µs
101

1 ms
P tot [W]

I D [A]
20
10 ms

100
DC
10

0 10-1
0 40 80 120 160 100 101 102 103
T C [°C] V DS [V]

3 Max. transient thermal impedance 4 Typ. output characteristics


Z thJC =f(t P) I D=f(V DS); T j=25 °C
parameter: D=t p/T parameter: V GS

101 75

20 V

0.5 10 V
60 8V

100 0.2
7V
45
Z thJC [K/W]

0.1
I D [A]

0.05

6V
0.02
30

10-1
5.5 V

0.01
15
5V

single pulse
4.5 V

10-2 0
10-5 10-4 10-3 10-2 10-1 100 101 0 5 10 15 20
t p [s] V DS [V]

Rev. 2.2 page 4 2011-12-20


Rev. 2.3 Page 4 2018-02-14
IPA60R199CP
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C
parameter: V GS parameter: V GS

35 1.2
6.5 V
6V
20 V
30 10 V 5.5 V
1 5V
8V 7V

6V 10 V

25
5.5 V 0.8

7V

R DS(on) [Ω]
20
I D [A]

0.6

15
5V

0.4
10
4.5 V

0.2
5

0 0
0 5 10 15 20 0 10 20 30 40
V DS [V] I D [A]

7 Drain-source on-state resistance 8 Typ. transfer characteristics


R DS(on)=f(T j); I D=9.9 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j

0.6 80

0.5
C °25

60

0.4
R DS(on) [Ω]

I D [A]

0.3 40

98 %
C °150
typ
0.2

20

0.1

0 0
-60 -20 20 60 100 140 180 0 2 4 6 8 10
T j [°C] V GS [V]

Rev. 2.2 page 5 2011-12-20


Rev. 2.3 Page 5 2018-02-14
IPA60R199CP
9 Typ. gate charge 10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=9.9 A pulsed I F=f(V SD)
parameter: V DD parameter: T j

10 102

9 25 °C, 98%

8
120 V 150 °C, 98%
400 V
7 25 °C
101 150 °C

6
V GS [V]

I F [A]
5

4
100
3

0 10-1
0 10 20 30 40 0 0.5 1 1.5 2
Q gate [nC] V SD [V]

11 Avalanche energy 12 Drain-source breakdown voltage


E AS=f(T j); I D=6.6 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA

500 700

400
660

300
V BR(DSS) [V]
E AS [mJ]

620

200

580
100

0 540
20 60 100 140 180 -60 -20 20 60 100 140 180
T j [°C] T j [°C]

Rev. 2.2 page 6 2011-12-20


Rev. 2.3 Page 6 2018-02-14
IPA60R199CP
13 Typ. capacitances 14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS)

105 12

104

Ciss
8
3
10

E oss [µJ]
C [pF]

102 Coss

101

Crss

100 0
0 100 200 300 400 500 0 100 200 300 400 500 600
V DS [V] V DS [V]

Rev. 2.2 page 7 2011-12-20


Rev. 2.3 Page 7 2018-02-14
IPA60R199CP

Definition of diode switching characteristics

Rev. 2.3 Page 8 2018-02-14


IPA60R199CP

Outline PG­TO220 FullPAK

1 2 3

MILLIMETERS
DIMENSIONS
MIN. MAX.
DOCUMENT NO.
A 4.50 4.90
Z8B00003319
A1 2.34 2.85
A2 2.42 2.86 REVISION
b 0.65 0.90 07
b1 0.95 1.38
b2 0.95 1.51 SCALE 5:1
b3 0.65 1.38 0 1 2 3 4 5mm
b4 0.65 1.51
c 0.40 0.63
D 15.67 16.15
D1 8.97 9.83 EUROPEAN PROJECTION
E 10.00 10.65
e 2.54
H 28.70 29.75
L 12.78 13.75
L1 2.83 3.45
øP 3.00 3.30 ISSUE DATE
Q 3.15 3.50 27.01.2017

Rev. 2.3 Page 9 2018-02-14


600VCoolMOSªCPPowerTransistor
IPA60R199CP

RevisionHistory
IPA60R199CP

Revision:2018-02-26,Rev.2.3
Previous Revision
Revision Date Subjects (major changes since last revision)
2.3 2018-02-26 Outline PG-TO220 FullPAK update

TrademarksofInfineonTechnologiesAG

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EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.

TrademarksupdatedAugust2015

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10 Rev.2.3,2018-02-26